公开(公告)号：US08044294B2

公开(公告)日：2011-10-25

申请号：US12254016

申请日：2008-10-20

Applicant: Yeonjoon Park ,  Sang H. Choi ,  Glen C. King ,  James R. Elliott ,  Noel A. Talcott

Inventor： Yeonjoon Park ,  Sang H. Choi ,  Glen C. King ,  James R. Elliott ,  Noel A. Talcott

IPC: H01L35/14 ,  H01L35/22

CPC classification number: G01N23/207

Abstract: New thermoelectric materials comprise highly [111]-oriented twinned group IV alloys on the basal plane of trigonal substrates, which exhibit a high thermoelectric figure of merit and good material performance, and devices made with these materials.

Abstract translation: 新型热电材料在三角基板的基底面上包含高度[111]取向的孪晶IV族合金，其表现出高的热电性能和良好的材料性能，以及由这些材料制成的器件。

公开(公告)号：US20110024609A1

公开(公告)日：2011-02-03

申请号：US12512344

申请日：2009-07-30

Applicant: Yeonjoon Park ,  Sang H. Choi ,  Glen C. King ,  James R. Elliott

Inventor： Yeonjoon Park ,  Sang H. Choi ,  Glen C. King ,  James R. Elliott

IPC: G02B27/44 ,  H01L31/0232 ,  G03B27/32

CPC classification number: G03B27/32 ,  G03F7/70316 ,  G03F7/70383

Abstract: An optical apparatus includes an optical diffraction device configured for diffracting a predetermined wavelength of incident light onto adjacent optical focal points, and a photon detector for detecting a spectral characteristic of the predetermined wavelength. One of the optical focal points is a constructive interference point and the other optical focal point is a destructive interference point. The diffraction device, which may be a micro-zone plate (MZP) of micro-ring gratings or an optical lens, generates a constructive ray point using phase-contrasting of the destructive interference point. The ray point is located between adjacent optical focal points. A method of generating a densely-accumulated ray point includes directing incident light onto the optical diffraction device, diffracting the selected wavelength onto the constructive interference focal point and the destructive interference focal point, and generating the densely-accumulated ray point in a narrow region.

Abstract translation: 光学装置包括被配置为将预定波长的入射光衍射到相邻的光学焦点上的光学衍射装置，以及用于检测预定波长的光谱特性的光子检测器。 其中一个光学焦点是一个建设性的干涉点，另一个光学焦点是一个破坏性的干涉点。 可以是微环形光栅的微区域（MZP）或光学透镜的衍射装置使用相消干涉点的相位对应产生建设性的射线点。 射线点位于相邻的光学焦点之间。 产生密集累积的射线点的方法包括将入射光引导到光学衍射装置上，将所选择的波长衍射到构造干涉焦点和破坏性干涉焦点上，并在狭窄区域中产生密集累积的射线点。

公开(公告)号：US20100118683A1

公开(公告)日：2010-05-13

申请号：US12490747

申请日：2009-06-24

Applicant: Sang H. Choi ,  Yeonjoon Park ,  Glen C. King ,  James R. Elliott

Inventor： Sang H. Choi ,  Yeonjoon Park ,  Glen C. King ,  James R. Elliott

IPC: G11B7/00

CPC classification number: G11B7/1353 ,  G11B7/1374 ,  G11B2007/0006 ,  G11B2007/13722

Abstract: An embodiment generally relates to an optical device suitable for use with an optical medium for the storage and retrieval of data. The optical device includes an illumination means for providing a beam of optical radiation of wavelength λ and an optical path that the beam of optical radiation follows. The optical device also includes a diffractive optical element defined by a plurality of annular sections. The plurality of annular sections having a first material alternately disposed with a plurality of annular sections comprising a second material. The diffractive optical element generates a plurality of focal points and densely accumulated ray points with phase contrast phenomena and the optical medium is positioned at a selected focal point or ray point of the diffractive optical element.

Abstract translation: 实施例一般涉及适合与光学介质一起使用以用于存储和检索数据的光学装置。 该光学装置包括用于提供波长λ的光束的照射装置和光辐射束跟随的光路。 光学装置还包括由多个环形部分限定的衍射光学元件。 所述多个环形部分具有交替设置有包括第二材料的多个环形部分的第一材料。 衍射光学元件产生具有相位对比现象的多个焦点和密集累积的光点，并且光学介质位于衍射光学元件的选定焦点或射线点处。

公开(公告)号：US20100032796A1

公开(公告)日：2010-02-11

申请号：US12187419

申请日：2008-08-07

Applicant: Brennan J. Brown ,  James R. Elliott ,  Alvin A. Joseph ,  Edward J. Nowak

Inventor： Brennan J. Brown ,  James R. Elliott ,  Alvin A. Joseph ,  Edward J. Nowak

IPC: H01L23/58 ,  G06F17/50

CPC classification number: H01L23/66 ,  H01L21/76289 ,  H01L21/764 ,  H01L23/585 ,  H01L27/12 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Disclosed are embodiments of a semiconductor structure, a design structure for the semiconductor structure and a method of forming the semiconductor structure. The embodiments reduce harmonics and improve isolation between the active semiconductor layer and the substrate of a semiconductor-on-insulator (SOI) wafer. Specifically, the embodiments incorporate a trench isolation region extending to a fully or partially amorphized region of the wafer substrate. The trench isolation region is positioned outside lateral boundaries of at least one integrated circuit device located at or above the active semiconductor layer of the SOI wafer and, thereby improves isolation. The fully or partially amorphized region of the substrate reduces substrate mobility, which reduces the charge layer at the substrate/BOX interface and, thereby reduces harmonics. Optionally, the embodiments can incorporate an air gap between the wafer substrate and integrated circuit device(s) in order to further improve isolation.

公开(公告)号：US20090206368A1

公开(公告)日：2009-08-20

申请号：US12288379

申请日：2008-10-20

Applicant: Yeonjoon Park ,  Sang Hyouk Choi ,  Glen C. King ,  James R. Elliott

Inventor： Yeonjoon Park ,  Sang Hyouk Choi ,  Glen C. King ,  James R. Elliott

IPC: H01L29/778 ,  H01L29/04 ,  C23C14/34

CPC classification number: G01N23/207

Abstract: Growth conditions are developed, based on a temperature-dependent alignment model, to enable formation of cubic group IV, group II-V and group II-VI crystals in the [111] orientation on the basal (0001) plane of trigonal crystal substrates, controlled such that the volume percentage of primary twin crystal is reduced from about 40% to about 0.3%, compared to the majority single crystal. The control of stacking faults in this and other embodiments can yield single crystalline semiconductors based on these materials that are substantially without defects, or improved thermoelectric materials with twinned crystals for phonon scattering while maintaining electrical integrity. These methods can selectively yield a cubic-on-trigonal epitaxial semiconductor material in which the cubic layer is substantially either directly aligned, or 60 degrees-rotated from, the underlying trigonal material.

Abstract translation: 开发基于温度依赖性取向模型的生长条件，以使得能够在三面晶体基底的（0001）面上形成[111]取向的立方体IV族，II-V族和II-VI族晶体， 控制使得与多数单晶相比，原生双晶的体积百分比从约40％降低至约0.3％。 在本实施例和其他实施例中，堆垛层错的控制可以产生基本上没有缺陷的这些材料的单晶半导体，或者具有用于声子散射的具有孪晶晶体的改进的热电材料，同时保持电气完整性。 这些方法可以选择性地产生立方晶三面体外延半导体材料，其中立方体层基本上与下面的三角形材料直接对准或者60度旋转。

公开(公告)号：US20090165837A1

公开(公告)日：2009-07-02

申请号：US12254016

申请日：2008-10-20

Applicant: Yeonjoon Park ,  Sang H. Choi ,  Glen C. King ,  James R. Elliott ,  Noel A. Talcott

Inventor： Yeonjoon Park ,  Sang H. Choi ,  Glen C. King ,  James R. Elliott ,  Noel A. Talcott

IPC: H01L35/20 ,  H01L35/12 ,  H01B1/22 ,  H01B1/24

CPC classification number: G01N23/207

Abstract: New thermoelectric materials comprise highly [111]-oriented twinned group IV alloys on the basal plane of trigonal substrates, which exhibit a high thermoelectric figure of merit and good material performance, and devices made with these materials.

Abstract translation: 新型热电材料在三角基板的基底面上包含高度[111]取向的孪晶IV族合金，其表现出高的热电性能和良好的材料性能，以及由这些材料制成的器件。

公开(公告)号：US20080074723A1

公开(公告)日：2008-03-27

申请号：US11470771

申请日：2006-09-07

Applicant: Yeonjoon Park ,  Sang H. Choi ,  Glen C. King ,  Jae-Woo Kim ,  James R. Elliott

Inventor： Yeonjoon Park ,  Sang H. Choi ,  Glen C. King ,  Jae-Woo Kim ,  James R. Elliott

IPC: G02F1/03 ,  G02F1/07

CPC classification number: G02F1/29 ,  G02F1/05 ,  G02F2201/122

Abstract: A light control device is formed by ferroelectric material and N electrodes positioned adjacent thereto to define an N-sided regular polygonal region or circular region therebetween where N is a multiple of four.

公开(公告)号：US4325588A

公开(公告)日：1982-04-20

申请号：US154749

申请日：1980-05-30

Applicant: James R. Elliott, Jr. ,  Kathy L. Layne ,  Donald W. Hitch ,  Larry G. Marshall

Inventor： James R. Elliott, Jr. ,  Kathy L. Layne ,  Donald W. Hitch ,  Larry G. Marshall

IPC: F16C23/00 ,  F16C35/00

CPC classification number: F16C35/00 ,  F16C23/00

Abstract: A bearing take-up apparatus includes a rigid base having spaced upstanding walls between which a bearing housing having recesses in its upper surface is slidably received. A threaded screw having anchoring means rigidly secured on its ends and nuts intermediate its ends is lowered onto upper surfaces of the end walls with the nuts positioned to be received within the recesses while the anchoring means overhang the end walls. A cover is lowered over the screw and connecting means are provided for releasably connecting the cover to the end walls.

Abstract translation: 轴承卷取装置包括具有间隔开的壁的刚性基座，在其之间可滑动地容纳有在其上表面中具有凹部的轴承壳体。 具有刚性地固定在其端部上的锚定装置的螺纹螺钉和其端部之间的螺母被降低到端壁的上表面上，其中螺母被定位成被容纳在凹部内，而锚固装置伸出端壁。 将盖子降低到螺钉上方，并且设置连接装置以将盖子可释放地连接到端壁。