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公开(公告)号：US06291342B1
公开(公告)日：2001-09-18
申请号：US09767523
申请日：2001-01-23
Applicant: Jang-eun Lee , Ju-hyuck Chung , Tae-wook Seo
Inventor： Jang-eun Lee , Ju-hyuck Chung , Tae-wook Seo
IPC: H01L214763
Abstract: A method of forming a multilayer titanium nitride film hardly containing any Cl component by a multiple step chemical vapor deposition method, and a method of manufacturing a semiconductor device using the same are provided. In the present invention, a multilayer TiN film is formed by multiple step chemical vapor deposition (CVD) on a semiconductor substrate on which an underlayer is formed. In order to form the multilayer TiN film, an underlayer protective TiN film is formed by forming a first TiN film on the underlayer and NH3 annealing the first TiN film. A main TiN film is formed by forming a second TiN film on the underlayer protective TiN film and NH3 annealing the second TiN film. A source gas used in order to form the first TiN film has a smaller TiCl4 to NH3 gas flow ratio than a source gas for forming the second TiN film. In order to apply the multilayer TiN film to the fabrication of the semiconductor device, an insulating film having a contact hole is formed on a semiconductor substrate. A Ti film is formed on the inner wall of the contact hole. A multilayer TiN film is formed on the Ti film by the multiple step CVD method. A metal plug is formed on the multilayer TiN film.
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公开(公告)号：US09356228B2
公开(公告)日：2016-05-31
申请号：US14618534
申请日：2015-02-10
Applicant: Jeong Heon Park , Woo Chang Lim , Se Chung Oh , Young Hyun Kim , Sang Hwan Park , Jang Eun Lee
Inventor： Jeong Heon Park , Woo Chang Lim , Se Chung Oh , Young Hyun Kim , Sang Hwan Park , Jang Eun Lee
CPC classification number: H01L43/08 , G06F13/16 , G11C11/161 , G11C11/1659 , H01L43/02 , H01L43/10
Abstract: Provided is a magnetic tunneling junction device including a first structure including a magnetic layer; a second structure including at least two extrinsic perpendicular magnetization structures, each including a magnetic layer and; a perpendicular magnetization inducing layer on the magnetic layer; and a tunnel barrier between the first and second structures.
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43.发明申请MAGNETIC TUNNELING JUNCTION DEVICES, MEMORIES, ELECTRONIC SYSTEMS, AND MEMORY SYSTEMS, AND METHODS OF FABRICATING THE SAME 有权磁性隧道连接装置，存储器，电子系统和存储器系统及其制造方法公开(公告)号：US20150102440A1
公开(公告)日：2015-04-16
申请号：US14579803
申请日：2014-12-22
Applicant: Jeong Heon PARK , Woo Chang LIM , Se Chung OH , Woo Jin KIM , Sang Hwan PARK , Jang Eun LEE
Inventor： Jeong Heon PARK , Woo Chang LIM , Se Chung OH , Woo Jin KIM , Sang Hwan PARK , Jang Eun LEE
CPC classification number: H01L43/08 , G11C11/16 , G11C11/161 , G11C11/1659 , H01L27/222 , H01L43/02 , H01L43/10 , H01L43/12 , Y10S977/933 , Y10S977/935
Abstract: Provided is a magnetic tunneling junction device including a fixed magnetic structure; a free magnetic structure; and a tunnel barrier between the fixed magnetic structure and the free magnetic structure, at least one of the fixed magnetic structure and the free magnetic structure including a perpendicular magnetization preserving layer, a magnetic layer between the perpendicular magnetization preserving layer and the tunnel barrier, and a perpendicular magnetization inducing layer between the perpendicular magnetization preserving layer and the magnetic layer.
Abstract translation: 提供一种包括固定磁性结构的磁性隧道接合装置; 自由磁结构; 以及在所述固定磁性结构和所述自由磁性结构之间的隧道势垒，所述固定磁性结构和所述自由磁性结构中的至少一个包括垂直磁化保持层，所述垂直磁化保留层与所述隧道势垒之间的磁性层，以及 在垂直磁化保持层和磁性层之间的垂直磁化诱导层。
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44.发明授权公开(公告)号：US08947914B2
公开(公告)日：2015-02-03
申请号：US13398617
申请日：2012-02-16
Applicant: Jeong Heon Park , Woo Chang Lim , Sechung Oh , Woojin Kim , Sang Hwan Park , Jang Eun Lee
Inventor： Jeong Heon Park , Woo Chang Lim , Sechung Oh , Woojin Kim , Sang Hwan Park , Jang Eun Lee
CPC classification number: H01L43/08 , G11C11/16 , G11C11/161 , G11C11/1659 , H01L27/222 , H01L43/02 , H01L43/10 , H01L43/12 , Y10S977/933 , Y10S977/935
Abstract: Provided is a magnetic tunneling junction device including a fixed magnetic structure; a free magnetic structure; and a tunnel barrier between the fixed magnetic structure and the free magnetic structure, at least one of the fixed magnetic structure and the free magnetic structure including a perpendicular magnetization preserving layer, a magnetic layer between the perpendicular magnetization preserving layer and the tunnel barrier, and a perpendicular magnetization inducing layer between the perpendicular magnetization preserving layer and the magnetic layer.
Abstract translation: 提供一种包括固定磁性结构的磁性隧道接合装置; 自由磁结构; 以及在所述固定磁性结构和所述自由磁性结构之间的隧道势垒，所述固定磁性结构和所述自由磁性结构中的至少一个包括垂直磁化保持层，所述垂直磁化保留层与所述隧道势垒之间的磁性层，以及 在垂直磁化保持层和磁性层之间的垂直磁化诱导层。
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45.发明申请MAGNETIC TUNNELING JUNCTION DEVICES, MEMORIES, MEMORY SYSTEMS, AND ELECTRONIC DEVICES 有权磁性隧道连接装置，存储器，存储器系统和电子设备公开(公告)号：US20140297968A1
公开(公告)日：2014-10-02
申请号：US14306792
申请日：2014-06-17
Applicant: Jeong Heon PARK , Woo Chang LIM , Se Chung OH , Young Hyun KIM , Sang Hwan PARK , Jang Eun LEE
Inventor： Jeong Heon PARK , Woo Chang LIM , Se Chung OH , Young Hyun KIM , Sang Hwan PARK , Jang Eun LEE
CPC classification number: H01L43/08 , G06F13/16 , G11C11/161 , G11C11/1659 , H01L43/02 , H01L43/10
Abstract: Provided is a magnetic tunneling junction device including a first structure including a magnetic layer; a second structure including at least two extrinsic perpendicular magnetization structures, each including a magnetic layer and; a perpendicular magnetization inducing layer on the magnetic layer; and a tunnel barrier between the first and second structures.
Abstract translation: 本发明提供一种包括具有磁性层的第一结构的磁性隧道接合装置; 包括至少两个外在垂直磁化结构的第二结构，每个包括磁性层; 磁性层上的垂直磁化诱导层; 以及第一和第二结构之间的隧道屏障。
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Patent Agency Ranking
公开(公告)号：US20130171743A1
公开(公告)日：2013-07-04
申请号：US13729147
申请日：2012-12-28
Applicant: Jang-eun Lee , Soon-oh Park , Sang-hwan Park , Hee-ju Shin
Inventor： Jang-eun Lee , Soon-oh Park , Sang-hwan Park , Hee-ju Shin
IPC: H01L43/12
CPC classification number: H01L43/12 , G11C11/161 , H01L27/228
Abstract: A magnetic device and a method of manufacturing the same. In the method, a lower magnetic layer, an insulation layer, and an upper magnetic layer are sequentially formed on a substrate. An upper magnetic layer pattern is formed by patterning the upper magnetic layer until an upper surface of the insulation layer is exposed. An isolation layer pattern is formed from portions of the insulation layer and the lower magnetic layer by performing an oxidation process on the exposed upper surface of the insulation layer, and an insulation layer pattern and a lower magnetic layer pattern are formed from portions of the insulation layer and the lower magnetic layer, where the isolation layer pattern is not formed.
Abstract translation: 磁性装置及其制造方法。 在该方法中，在基板上依次形成下磁性层，绝缘层和上磁性层。 通过图案化上磁性层直到绝缘层的上表面露出来形成上部磁性层图案。 通过在绝缘层的暴露的上表面上进行氧化处理，从绝缘层和下部磁性层的部分形成隔离层图案，并且绝缘层图案和下部磁性层图案由绝缘体的一部分形成 层和下磁性层，其中不形成隔离层图案。
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公开(公告)号：US20120292724A1
公开(公告)日：2012-11-22
申请号：US13475520
申请日：2012-05-18
Applicant: Woo-Chang LIM , Jang-Eun LEE , Se-Chung OH , Woo-Jin KIM , Young-Hyun KIM , Jeong-Heon PARK
Inventor： Woo-Chang LIM , Jang-Eun LEE , Se-Chung OH , Woo-Jin KIM , Young-Hyun KIM , Jeong-Heon PARK
IPC: H01L29/82
CPC classification number: H01L43/08
Abstract: A magnetic tunnel junction element is provided. The magnetic tunnel junction element has first magnetic layer and second magnetic layer formed adjacent, e.g., on lower and upper portions of an insulating layer, respectively and each having a perpendicular magnetic anisotropy, a magnetic field adjustment layer formed on the second magnetic layer and having a perpendicular magnetic anisotropy, and a bather layer formed between the magnetic field adjustment layer and the second magnetic layer. The second magnetic layer and the magnetic field adjustment layer are magnetically decoupled from each other.
Abstract translation: 提供磁性隧道结元件。 磁性隧道结元件分别具有第一磁性层和第二磁性层，该第一磁性层和第二磁性层分别形成在例如绝缘层的下部和上部上并且各自具有垂直的磁各向异性，磁场调节层形成在第二磁性层上并具有 垂直磁各向异性，以及形成在磁场调整层和第二磁性层之间的沐浴层。 第二磁性层和磁场调节层彼此磁耦合。
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公开(公告)号：US08247880B2
公开(公告)日：2012-08-21
申请号：US12372083
申请日：2009-02-17
Applicant: Se-Chung Oh , Jang-Eun Lee , Kyung-Tae Nam , Woo-Jin Kim , Dae-Kyom Kim , Jun-ho Jeong , Seung-Yeol Lee
Inventor： Se-Chung Oh , Jang-Eun Lee , Kyung-Tae Nam , Woo-Jin Kim , Dae-Kyom Kim , Jun-ho Jeong , Seung-Yeol Lee
CPC classification number: H01L43/08 , G11C11/161 , G11C11/1673 , G11C11/1675 , H01L43/10
Abstract: A magnetic memory device and a method of fabricating the same. The magnetic memory device includes a free layer, a write element, and a read element. The write element changes the magnetization direction of the free layer, and the read element senses the magnetization direction of the free layer. Herein, the write element includes a current confinement layer having a width smaller than the minimum width of the free layer to locally increase the density of a current flowing through the write element.
Abstract translation: 一种磁存储器件及其制造方法。 磁存储器件包括自由层，写入元件和读取元件。 写入元件改变自由层的磁化方向，并且读取元件感测自由层的磁化方向。 这里，写元件包括具有小于自由层的最小宽度的宽度的电流限制层，以局部地增加流过写入元件的电流的密度。
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49.发明申请Method For Forming Magnetic Tunnel Junction Structure And Method For Forming Magnetic Random Access Memory Using The Same 有权用于形成磁隧道结结构的方法和用于形成磁性随机存取存储器的方法公开(公告)号：US20120135543A1
公开(公告)日：2012-05-31
申请号：US13286630
申请日：2011-11-01
Applicant: Hee-Ju SHIN , Jun-Ho JEONG , Jang-Eun LEE , Se-Chung OH
Inventor： Hee-Ju SHIN , Jun-Ho JEONG , Jang-Eun LEE , Se-Chung OH
IPC: H01L43/12
CPC classification number: H01L43/12 , G11C11/161 , H01L27/228
Abstract: A method of fabricating a magnetic tunnel junction structure includes forming a magnetic tunnel junction layer on a substrate. A mask pattern is formed on a region of the second magnetic layer. A magnetic tunnel junction layer pattern and a sidewall dielectric layer pattern on at least one sidewall of the magnetic tunnel junction layer pattern are formed by performing at least one etch process and at least one oxidation process multiple times. The at least one etch process may include a first etch process to etch a portion of the magnetic tunnel junction layer using an inert gas and the mask pattern to form a first etch product. The at least one oxidation process may include a first oxidation process to oxidize the first etch product attached on an etched side of the magnetic tunnel junction layer.
Abstract translation: 制造磁性隧道结结构的方法包括在衬底上形成磁性隧道结层。 在第二磁性层的区域上形成掩模图案。 通过多次执行至少一个蚀刻工艺和至少一个氧化工艺来形成在磁性隧道结层图案的至少一个侧壁上的磁性隧道结层图案和侧壁电介质层图案。 所述至少一个蚀刻工艺可以包括使用惰性气体蚀刻磁性隧道结层的一部分并且掩模图案以形成第一蚀刻产物的第一蚀刻工艺。 所述至少一个氧化工艺可以包括第一氧化工艺以氧化附着在磁性隧道结层的蚀刻侧上的第一蚀刻产物。
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50.发明授权Method for forming minute pattern and method for forming semiconductor memory device using the same 有权用于形成微小图案的方法和使用其形成半导体存储器件的方法公开(公告)号：US08083962B2
公开(公告)日：2011-12-27
申请号：US11783015
申请日：2007-04-05
Applicant: Jang-Eun Lee , Kyung-Tae Nam , Se-Chung Oh , Jun-Ho Jeong
Inventor： Jang-Eun Lee , Kyung-Tae Nam , Se-Chung Oh , Jun-Ho Jeong
CPC classification number: H01L21/0337 , H01L21/0338 , H01L43/12 , H01L45/04 , H01L45/06 , H01L45/1675
Abstract: A method for forming a minute pattern includes depositing a material layer on a semiconductor substrate having a conductive region, forming a first mask layer on the material layer, forming a recess region in the first mask layer, performing layer processing to form a first mask pattern in the recess region, and etching the material layer to form a material layer pattern.
Abstract translation: 形成微小图案的方法包括在具有导电区域的半导体衬底上沉积材料层，在材料层上形成第一掩模层，在第一掩模层中形成凹陷区域，进行层处理以形成第一掩模图案 在凹陷区域中蚀刻材料层以形成材料层图案。
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