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    Mask layout and method of forming contact pad using the same
    41.
    发明申请
    Mask layout and method of forming contact pad using the same 失效
    使用其形成接触垫的掩模布局和方法

    公开(公告)号：US20060222966A1

    公开(公告)日：2006-10-05

    申请号：US11342560

    申请日：2006-01-31

    申请人： Jung-Woo Seo ,  Tae-Hyuk Ahn ,  Jong-Seo Hong

    发明人： Jung-Woo Seo ,  Tae-Hyuk Ahn ,  Jong-Seo Hong

    IPC分类号： G03C5/00 ,  G03F1/00

    CPC分类号： H01L21/31144 ,  G03F1/00 ,  H01L21/76897

    摘要： Provided are contact photomasks and methods using such photomasks for fabricating semiconductor devices and forming contact plugs on portions of active regions exposed between gate lines. The elongated active regions are arrayed in a series of parallel groups with each group being, in turn, aligned along their longitudinal axes to form an acute angle with the gate lines. The contact photomask includes a plurality of openings arranged in parallel lines that are aligned at an angle offset from previously formed gate lines and which may be parallel to the active regions or may be aligned at an angle offset from the axes of both the groups of active regions and the gate lines. Processes for forming contact plugs using such photomasks may provide increased processing margin and extend the utility of conventional exposure equipment for semiconductor devices exhibiting increased integration density and/or built to more demanding design rules.

    摘要翻译： 提供了使用这种光掩模的接触光掩模和方法来制造半导体器件，并在暴露在栅极线之间的有源区域的部分上形成接触插塞。 细长的有源区域被排列成一系列平行的组，每个组又沿它们的纵向轴线对准，以与栅极线形成锐角。 接触光掩模包括以平行线布置的多个开口，其以与先前形成的栅极线偏移的角度排列，并且可以平行于有源区域，或者可以与两个活动组的轴线偏移的角度对准 区域和栅极线。 使用这种光掩模形成接触塞的方法可以提供增加的加工余量，并且扩展了展示增加的集成密度和/或构建到更苛刻的设计规则的半导体器件的常规曝光设备的效用。

    Method of manufacturing a semiconductor memory device
    42.
    发明申请
    Method of manufacturing a semiconductor memory device 失效
    制造半导体存储器件的方法

    公开(公告)号：US20050079673A1

    公开(公告)日：2005-04-14

    申请号：US10954835

    申请日：2004-09-29

    申请人： Jung-woo Seo ,  Tae-hyuk Ahn ,  Jeong-sic Jeon

    发明人： Jung-woo Seo ,  Tae-hyuk Ahn ,  Jeong-sic Jeon

    IPC分类号： H01L21/28 ,  H01L21/336 ,  H01L21/768 ,  H01L21/8242 ,  H01L27/108

    CPC分类号： H01L21/76895 ,  H01L21/76802 ,  H01L21/76831 ,  H01L27/10814 ,  H01L27/10855 ,  H01L27/10885 ,  H01L27/10888

    摘要： Manufacturing a semiconductor memory by first forming a first insulating layer covering a conductive pad. Next forming and pattering a bit line conductive layer and a second insulating layer to expose a part of the first insulating layer. A third insulating layer covering the exposed surfaces of the first insulating layer is formed. Exposing an upper surface of the bit line conductive layer pattern and an upper surface of the third insulating layer. Removing part of the third insulating layer and first insulating layer to expose the conductive pad. Forming a spacer on the side walls of the bit line conductive layer pattern and the first insulating layer. An insulating layer pattern and a second spacer layer are respectively formed on the bit line conductive layer pattern and on a side wall of the first spacer and a conductive plug, which is in contact with the conductive pad is formed.

    摘要翻译： 通过首先形成覆盖导电垫的第一绝缘层来制造半导体存储器。 接下来形成和图案位线导电层和第二绝缘层以暴露第一绝缘层的一部分。 形成覆盖第一绝缘层的暴露表面的第三绝缘层。 露出位线导电层图案的上表面和第三绝缘层的上表面。 去除第三绝缘层和第一绝缘层的一部分以暴露导电焊盘。 在位线导电层图案和第一绝缘层的侧壁上形成间隔物。 分别在位线导电层图案和第一间隔物的侧壁上形成绝缘层图案和第二间隔层，并且形成与导电焊盘接触的导电插塞。

    System and method for collecting document
    45.
    发明授权
    System and method for collecting document 有权
    收集文件的系统和方法

    公开(公告)号：US08930343B2

    公开(公告)日：2015-01-06

    申请号：US13165338

    申请日：2011-06-21

    申请人： Young Su Ko ,  Seung Yeop Han ,  Jung Woo Seo

    发明人： Young Su Ko ,  Seung Yeop Han ,  Jung Woo Seo

    IPC分类号： G06F17/30

    CPC分类号： G06F17/30864

    摘要： Provided is a system and method for collecting a document. The system may include an identification information receiver to receive, from a host of a site, identification information of a document of which an update may occur, a collection request transfer unit to transmit a collection request for the document based on the identification information, an update information collector to receive update information of the document from the host, and a search result provider to provide, to the host, a search result extracted from the update information of the document, in response to the search request being received from the host. The system for collecting the document may reduce load of a web site, and may improve accuracy of the document to be collected.

    摘要翻译： 提供了一种用于收集文档的系统和方法。 系统可以包括识别信息接收器，用于从站点的主机接收可能发生更新的文档的标识信息;收集请求传送单元，用于基于识别信息发送文档的收集请求; 更新信息收集器以从主机接收文档的更新信息，以及搜索结果提供者，用于响应于从主机接收的搜索请求向主机提供从文档的更新信息中提取的搜索结果。 用于收集文档的系统可以减少网站的负载，并且可以提高要收集的文档的准确性。

    Roll Printing Apparatus
    46.
    发明申请
    Roll Printing Apparatus 有权
    卷筒印刷设备

    公开(公告)号：US20120125215A1

    公开(公告)日：2012-05-24

    申请号：US13303305

    申请日：2011-11-23

    申请人： Jung Woo Cho ,  Dae Jung Kim ,  Dong Min Kim ,  Sin Kwon ,  Jung Woo Seo

    发明人： Jung Woo Cho ,  Dae Jung Kim ,  Dong Min Kim ,  Sin Kwon ,  Jung Woo Seo

    IPC分类号： B41F35/02

    CPC分类号： B41F35/00 ,  B41F17/26 ,  B41P2235/26 ,  B41P2235/27 ,  H05K3/1275

    摘要： According to example embodiments, a roll printing apparatus includes a cleaning device in which a cleaning nozzle unit and a spray nozzle unit are integrated so that both a reverse offset process and a cliche cleaning process may be achieved in the roll printing apparatus. The roll printing apparatus may include a base plate, a blanket roll to transfer an ink material to a cliche and a substrate, a blanket roll supporter located on the base plate to support the blanket roll, a cliche table located on the base plate to fix and move the cliche, a substrate table located on the base plate to fix the substrate, and the cleaning device installed on the base plate to clean the cliche. The cleaning device may include a cleaning nozzle unit to spray a cleaning solution and a spray nozzle unit to spray DIW, which are integrated.

    摘要翻译： 根据示例性实施例，卷筒印刷装置包括清洁装置，其中清洁喷嘴单元和喷嘴单元被整合，使得可以在卷筒印刷装置中实现反向偏移处理和清晰处理。 卷筒印刷装置可以包括基板，用于将油墨材料转印到纸板和基板的橡皮布辊，位于基板上以支撑橡皮布辊的覆盖辊支撑件，位于基板上的陈列台，以固定 并移动底板，位于基板上的基板台以固定基板，以及安装在基板上的清洁装置以清洁陈列架。 清洁装置可以包括用于喷射清洁溶液的清洁喷嘴单元和喷射单元以喷射集成的DIW。

    Semiconductor memory device having local etch stopper and method of manufacturing the same
    47.
    发明授权
    Semiconductor memory device having local etch stopper and method of manufacturing the same 有权
    具有局部蚀刻停止器的半导体存储器件及其制造方法

    公开(公告)号：US07851354B2

    公开(公告)日：2010-12-14

    申请号：US12267785

    申请日：2008-11-10

    申请人： Jung-woo Seo ,  Jong-seo Hong ,  Tae-hyuk Ahn ,  Jeong-sic Jeon ,  Jun-sik Hong ,  Young-sun Cho

    发明人： Jung-woo Seo ,  Jong-seo Hong ,  Tae-hyuk Ahn ,  Jeong-sic Jeon ,  Jun-sik Hong ,  Young-sun Cho

    IPC分类号： H01L21/4763

    CPC分类号： H01L21/76895 ,  H01L21/76837 ,  H01L21/76885 ,  H01L21/76897 ,  H01L27/10855 ,  H01L27/10888 ,  H01L27/10894

    摘要： A semiconductor memory device includes a semiconductor substrate in which a cell region and a core and peripheral region are defined. The device further comprises isolation layers formed in the semiconductor substrate to define active regions, a first gate electrode structure formed in the cell region and a second gate electrode structure formed in the core and peripheral region. Source and drain regions formed in the active regions on respective sides of each of the gate electrode structures and self-aligned contact pads are formed in the cell region in contact with the source and drain regions. An insulating interlayer is formed on the semiconductor substrate between the self-aligned contact pads, and etch stoppers are formed on the insulating interlayer between the self-aligned contact pads in the cell region.

    摘要翻译： 半导体存储器件包括其中限定了单元区域和芯和外围区域的半导体衬底。 该器件还包括形成在半导体衬底中以限定有源区的隔离层，形成在单元区域中的第一栅电极结构和形成在芯和外围区中的第二栅电极结构。 形成在每个栅电极结构和自对准接触焊盘的相应侧上的有源区中的源区和漏区形成在与源区和漏区接触的单元区域中。 在自对准接触焊盘之间的半导体衬底上形成绝缘中间层，并且在电池区域中的自对准接触焊盘之间的绝缘中间层上形成蚀刻阻挡层。

    MANUFACTURING THIN-FILM TRANSISTOR AND COLOR FILTER SUBSTRATES
    48.
    发明申请
    MANUFACTURING THIN-FILM TRANSISTOR AND COLOR FILTER SUBSTRATES 审中-公开
    制造薄膜晶体管和彩色滤光片基板

    公开(公告)号：US20090072418A1

    公开(公告)日：2009-03-19

    申请号：US12048124

    申请日：2008-03-13

    申请人： Jae-Hyuk Chang ,  Jung-Woo Seo ,  Jung-Woo Park ,  Jung-Woo Cho

    发明人： Jae-Hyuk Chang ,  Jung-Woo Seo ,  Jung-Woo Park ,  Jung-Woo Cho

    IPC分类号： B29D11/00 ,  B29C35/08

    CPC分类号： B29D11/00634 ,  B29C59/022 ,  B29C2059/023 ,  G02F1/133516 ,  G02F1/1362

    摘要： A method of manufacturing thin film transistor and color filter substrates suitable for liquid crystal displays comprises imprinting a pattern in a resin layer formed on a substrate by disposing a mold on the resin layer, aligning the mold and the substrate, curing an edge portion of the resin layer, pressing the full area of the resin layer, curing the full area of the resin layer, and separating the mold from the resin layer.

    摘要翻译： 制造适用于液晶显示器的薄膜晶体管和彩色滤光片基板的方法包括：通过在树脂层上设置模具，将模具对准模具和基板，使模具和基板的边缘部分固化，将图案压印在形成在基板上的树脂层中 树脂层，按压树脂层的整个区域，固化树脂层的整个区域，并将模具与树脂层分离。

    Semiconductor device having raised cell landing pad and method of fabricating the same
    49.
    发明申请
    Semiconductor device having raised cell landing pad and method of fabricating the same 失效

    公开(公告)号：US20060138561A1

    公开(公告)日：2006-06-29

    申请号：US11268551

    申请日：2005-11-08

    申请人： Jung-Woo Seo ,  Tae-Hyuk Ahn ,  Jong-Seo Hong

    发明人： Jung-Woo Seo ,  Tae-Hyuk Ahn ,  Jong-Seo Hong

    IPC分类号： H01L29/76 ,  H01L21/44

    CPC分类号： H01L27/10855 ,  H01L21/76895

    摘要： A semiconductor device and method of manufacturing the same having pad extending parts, the semiconductor device includes an isolation layer that defines an active region and a gate electrode which traverses the active region. A source region is provided in the active region at one side of the gate electrode, and a drain region is provided in the active region at a second side of the gate electrode. A first interlayer insulating layer covers the semiconductor substrate. A source landing pad is electrically connected to the source region, and a drain landing pad is electrically connected to the drain region. A pad extending part is laminated on one or more of the source landing pad and the drain landing pad. The pad extending part has an upper surface located in a plane above a plane corresponding to the upper surfaces of the source landing pad and the drain landing pad.

    Method of forming storage node of capacitor
    50.
    发明申请
    Method of forming storage node of capacitor 审中-公开
    形成电容器存储节点的方法

    公开(公告)号：US20060134875A1

    公开(公告)日：2006-06-22

    申请号：US11284389

    申请日：2005-11-21

    申请人： Tae-Hyuk Ahn ,  Jung-Woo Seo

    发明人： Tae-Hyuk Ahn ,  Jung-Woo Seo

    IPC分类号： H01L21/20

    CPC分类号： H01L28/91 ,  H01L27/10894 ,  H01L28/65

    摘要： A method of forming a storage node of a capacitor includes defining a cell region and a peripheral circuit region in a semiconductor substrate. An interlayer insulating layer is formed on the semiconductor substrate of the cell region and the peripheral circuit region. Buried contact plugs are formed to penetrate the interlayer insulating layer of the cell region. A molding layer is formed on the semiconductor substrate of the cell region and the peripheral circuit region. The molding layer of the cell region is patterned, thereby forming storage node holes exposing the buried contact plugs. A conformal storage node layer is formed on the semiconductor substrate having the storage node holes. A photosensitive layer is formed on the semiconductor substrate having the storage node layer. At this time, the photosensitive layer in the cell region is lower in height than the photosensitive layer in the peripheral circuit region. The semiconductor substrate is exposed using a reticle having a scattering bar. The scattering bar of the reticle is positioned to correspond with the cell region. An exposed portion of the photosensitive layer is removed by developing the semiconductor substrate, thereby partially exposing the storage node layer. The photosensitive layer in the storage node holes is therefore maintained. An etch-back is performed on the semiconductor substrate having the exposed storage node layer, thereby separating storage nodes.

    摘要翻译： 形成电容器的存储节点的方法包括限定半导体衬底中的单元区域和外围电路区域。 在单元区域和外围电路区域的半导体衬底上形成层间绝缘层。 形成埋入式接触插塞以穿透电池区域的层间绝缘层。 在单元区域和外围电路区域的半导体基板上形成成型层。 对单元区域的成型层进行图案化，从而形成露出埋入式接触插塞的存储节点孔。 在具有存储节点孔的半导体衬底上形成保形存储节点层。 在具有存储节点层的半导体衬底上形成感光层。 此时，单元区域中的感光层的高度比外围电路区域中的感光层低。 使用具有散射棒的掩模版来曝光半导体衬底。 掩模版的散射棒被定位成与单元区域对应。 通过显影半导体衬底去除感光层的曝光部分，从而部分地曝光存储节点层。 因此，保持存储节点孔中的感光层。 在具有暴露的存储节点层的半导体衬底上进行回蚀，由此分离存储节点。