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公开(公告)号：US20220128861A1
公开(公告)日：2022-04-28
申请号：US17499124
申请日：2021-10-12
Applicant: KAISTAR Lighting (Xiamen) Co., Ltd.
Inventor： Jingqiong Zhang , Changwen Liao
Abstract: A light-emitting diode (LED) and a backlight-type display device are provided. The light-emitting diode includes: a multi-color light emitting chip, an emission spectrum thereof including a first peak in a wavelength range of a first primary-color light and a second peak in a wavelength range of a second primary-color light, and an absolute value of a wavelength difference between the first and second peaks being greater than 50 nm; and a phosphor-containing layer, disposed over the multi-color light emitting chip and used to be excited to emit a third primary-color light. Owing to the LED adopts the multi-color light emitting chip which has the first and second peaks in different wavelength ranges and the absolute valve of the wavelength difference is greater than 50 nm, RGB three-primary-color lights can be outputted by adopting a single-color light phosphor powder with relatively high reliability. The backlight-type display device can obtain a high NTSC level.
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公开(公告)号：US11315908B2
公开(公告)日：2022-04-26
申请号：US16442727
申请日：2019-06-17
Applicant: KAISTAR Lighting(Xiamen) Co., Ltd.
Inventor： Jing-Qiong Zhang , Tsung-Chieh Lin
IPC: H01L25/07 , H01L25/075 , H01L33/50 , H01L33/52 , H01L33/62
Abstract: An LED package structure includes a substrate and a light-emitting array. The substrate has a die bond area, and the light-emitting array is disposed in the die bond area. Each first light-emitting unit of the light-emitting array includes a first light-emitting chip and a first wavelength conversion layer of the light-emitting chip, each second light-emitting unit of the light-emitting array includes a second light-emitting chip and a second wavelength conversion layer covering the second light-emitting chip. A first light beam includes a first emission light generated by exciting the first wavelength conversion layer, and the second light beam includes a second emission light generated by exciting the second wavelength conversion layer, and the difference between the first and second emission light peak wavelengths is at least 30 nm.
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公开(公告)号：US11257988B2
公开(公告)日：2022-02-22
申请号：US16262870
申请日：2019-01-30
Applicant: KAISTAR Lighting (Xiamen) Co., Ltd.
Inventor： Jing Chen
IPC: H01L33/48 , H01L33/60 , H01L33/62 , H01L23/495 , H01L23/498
Abstract: The application relates to an LED module, an LED holder, and a method for manufacturing the LED holder. The LED holder includes an insulating carrier and a lead frame. The insulating carrier includes a first sidewall, a second sidewall opposite to the first sidewall, and a partition portion positioned between the first sidewall and the second sidewall. The lead frame includes a first electrode and a second electrode positioned at two sides of the partition portion respectively. The first electrode includes a first bottom portion and a first wing portion obliquely connected with the first bottom portion. The second electrode includes a second bottom portion and a second wing portion obliquely connected with the second bottom portion. The LED holder can improve the reflectivity of the insulating carrier and can prevent the insulating carrier from aging.
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公开(公告)号：US11257980B2
公开(公告)日：2022-02-22
申请号：US16629367
申请日：2019-11-12
Applicant: KAISTAR Lighting(Xiamen) Co., Ltd.
Inventor： Ben-Jie Fan , Jing-Qiong Zhang , Yi-Qun Li , Hung-Chih Yang , Tsung-Chieh Lin , Ho-Chien Chen , Shuen-Ta Teng , Cheng-Chang Hsieh
Abstract: A light-emitting diode is provided. The light-emitting diode includes a multiple quantum well structure to generate a light beam with a broadband blue spectrum. The light beam contains a first sub-light beam with a first wavelength and a second sub-light beam with a second wavelength. A difference between the first wavelength and the second wavelength ranges from 1 nm to 50 nm, and the light-emitting diode has a Wall-Plug-Efficiency (WPE) of greater than 0.45 under an operating current density of 120 mA/mm2.
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公开(公告)号：US20210375843A1
公开(公告)日：2021-12-02
申请号：US17169507
申请日：2021-02-07
Applicant: KAISTAR Lighting (Xiamen) Co., Ltd.
Abstract: An optoelectronic device and a manufacturing method thereof are provided. The optoelectronic device includes a substrate, light emitting chips disposed on the substrate and electrically connected to the substrate, a first annular structure disposed on the substrate and around the light emitting chips, a first wavelength conversion layer disposed in the first annular structure and covering the light emitting chips, a second annular structure disposed on the substrate and around the light emitting chips and further being in contact with the first annular structure, and a second wavelength conversion layer disposed in the second annular structure and covering the first wavelength conversion layer and the light emitting chips. Wavelength conversion substances contained in the first wavelength conversion layer and the second wavelength conversion layer respectively are different in material. Therefore, the optoelectronic device can achieve improved uniformity of luminescence as well as light output quality.
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Patent Agency Ranking
公开(公告)号：US20210167052A1
公开(公告)日：2021-06-03
申请号：US17169644
申请日：2021-02-08
Applicant: KAISTAR Lighting(Xiamen) Co., Ltd.
Inventor： JING-QIONG ZHANG , TSUNG-CHIEH LIN
Abstract: A light emitting device is provided. The light emitting device includes a light emitting assembly having a first light emitting diode package structure and a second light emitting diode package structure. The light emitting assembly can generate a mixed light source having a spectral deviation index. The first light emitting diode package structure can generate a first light source having a first spectral deviation index. The second light emitting diode package structure can generate a second light source having a second spectral deviation index. When the first light source and the second light source are within a range from 460 to 500 nm, a sum of the first spectral deviation index and the second spectral deviation index is within a range from −0.3 to 0.3, and a difference between the first spectral deviation index and the second spectral deviation index is at least greater than 0.2.
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公开(公告)号：US20210167049A1
公开(公告)日：2021-06-03
申请号：US17169632
申请日：2021-02-08
Applicant: KAISTAR Lighting(Xiamen) Co., Ltd.
Inventor： JING-QIONG ZHANG , TSUNG-CHIEH LIN
IPC: H01L25/075 , H01L33/48 , H01L33/62
Abstract: A light emitting diode package structure is provided. The light emitting diode package structure includes first and second chips. A value of an intensity of a peak wavelength of a first shoulder wave of the first chip divided by an intensity of a peak wavelength of a first main wave of the first chip is defined as a first intensity ratio. A value of an intensity of a peak wavelength of a second shoulder wave of the second chip divided by an intensity of a peak wavelength of a second main wave of the second chip is defined as a second intensity ratio. The first and second chips satisfy “a difference between the intensities of the peak wavelengths of the first and second main waves being less than or equal to 2.5 nanometers” and “a difference between the first and second intensity ratios being greater than 0.1”.
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公开(公告)号：US20200335668A1
公开(公告)日：2020-10-22
申请号：US16919202
申请日：2020-07-02
Applicant: KAISTAR Lighting(Xiamen) Co., Ltd.
Inventor： TIAN HE , WEI-HONG YANG , JING CHEN
IPC: H01L33/48 , H01L25/075 , H01L33/62 , H01L33/54 , H01L33/10
Abstract: An LED package structure and a carrier thereof are provided. The LED package structure includes a carrier, a plurality of LED chips, and an encapsulating colloid. The carrier includes a substrate, a ring-shaped first wall disposed on the substrate, and a ring-shaped second wall stacked on the first wall. A portion of the substrate surrounded by the first wall is defined as a die-bonding region, and the first wall, the second wall, and the die-bonding region jointly define an accommodating space. The LED chips are mounted on the die-bonding region and are arranged in the accommodating space. The encapsulating colloid is filled within the accommodating space, and the LED chips are embedded in the encapsulating colloid.
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公开(公告)号：US20190181312A1
公开(公告)日：2019-06-13
申请号：US16205278
申请日：2018-11-30
Applicant: KAISTAR Lighting (Xiamen) Co., Ltd
Inventor： GUOHENG QIN
Abstract: The present application relates to a packaging leadframe and a packaging structure. The packaging leadframe includes a substrate layer and a sidewall structure. A surface of the substrate layer is provided with at least one metal bump structure, a circuit layer also is laid on the surface of the substrate layer and can be electrically coupled with a LED chip. The sidewall structure is disposed on the surface with the metal bump structure, and includes a halocarbon polymer matrix and a plurality of light reflective particles uniformly mixed together. The halocarbon polymer may be poly tetra fluoroethylene or polyvinylidene fluoride. In this regard, the packaging leadframe has high reflectivity to ultraviolet light and good resistance to ultraviolet radiation.
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公开(公告)号：US20190137048A1
公开(公告)日：2019-05-09
申请号：US16241818
申请日：2019-01-07
Applicant: KAISTAR Lighting (Xiamen) Co., Ltd. , EPISTAR CORPORATION
Inventor： Chien-Li Yang , Yu-Chun Chung , Yu Min Li
IPC: F21K9/232
Abstract: The present disclosure relates to a LED filament and a LED bulb with the LED filament. The LED filament includes a carrier, LED chips disposed on the carrier, the carrier includes a first lateral section and a second lateral section opposite to the first lateral section, the LED chips are formed on the first lateral section, hardness of the first lateral section is less than that of the second lateral section. The disclosure further provides a LED bulb with the LED filament above. The LED filament above has benefits of improving structural strength and decreasing costs.
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