公开(公告)号：US20090171125A1

公开(公告)日：2009-07-02

申请号：US12276335

申请日：2008-11-22

申请人： Kuo-Chen Shih ,  Mao-Lin Hsueh ,  Hao-Hsun Yang

发明人： Kuo-Chen Shih ,  Mao-Lin Hsueh ,  Hao-Hsun Yang

IPC分类号： C07C45/49

CPC分类号： C07C45/50 ,  C07C29/141 ,  C07C29/175 ,  C07C45/80 ,  C07C2603/68 ,  C07C2603/91 ,  C07C47/347 ,  C07C47/445 ,  C07C31/278

摘要： The disclosed is about a hydroformylation reaction of a cyclic olefin in the presence of a rhodium catalyst, and specifically about recovering the rhodium catalyst. After the cyclic olefin is hydroformylated by the rhodium catalyst, the product solution is added an extraction liquid including a cycloalkyl alcohol and separated into two layers. The upper layer is substantially made up of the rhodium catalyst solution, and the lower layer is substantially made up of the cycloalkyl aldehyde and the extraction solution including cycloalkyl alcohol.

摘要翻译： 所公开的是关于在铑催化剂存在下环状烯烃的加氢甲酰化反应，具体地涉及回收铑催化剂。 在环烯烃被铑催化剂加氢甲酰化后，产物溶液中加入包含环烷醇的萃取液，分离成两层。 上层基本上由铑催化剂溶液组成，下层基本上由环烷基醛组成，提取溶液包括环烷醇。

公开(公告)号：US20090161188A1

公开(公告)日：2009-06-25

申请号：US12050683

申请日：2008-03-18

申请人： Chieh-Fu Lu ,  Jui-Hsiang Liu ,  Shih-Jung Tsai ,  Kuo-Chen Shih

发明人： Chieh-Fu Lu ,  Jui-Hsiang Liu ,  Shih-Jung Tsai ,  Kuo-Chen Shih

IPC分类号： G02B5/32 ,  G03F1/14

CPC分类号： G02B5/32 ,  G03F7/001

摘要： A holographic grating is provided. The holographic grating includes a plurality of first structural areas including acrylic polymer with a first refractive index and a plurality of second structural areas including non-liquid crystal molecules with a second refractive index, wherein the first structural area is adjacent to the second structural area and the second refractive index is higher than the first refractive index. The invention also provides a method for fabricating the holographic grating.

摘要翻译： 提供全息光栅。 全息光栅包括多个第一结构区域，包括具有第一折射率的丙烯酸聚合物和包括具有第二折射率的非液晶分子的多个第二结构区域，其中第一结构区域与第二结构区域相邻， 第二折射率高于第一折射率。 本发明还提供一种制造全息光栅的方法。

公开(公告)号：US07544603B2

公开(公告)日：2009-06-09

申请号：US11233831

申请日：2005-09-22

申请人： Neng-Kuo Chen ,  Teng-Chun Tsai ,  Hsiu-Lien Liao

发明人： Neng-Kuo Chen ,  Teng-Chun Tsai ,  Hsiu-Lien Liao

IPC分类号： H01L21/20

CPC分类号： H01L29/7833 ,  H01L29/665 ,  H01L29/6659 ,  H01L29/7843

摘要： A method of fabricating a silicon nitride layer is described. First, a substrate is provided. Then, a silicon nitride layer is formed on the substrate. The silicon nitride layer is UV-cured in an atmosphere lower than the standard atmospheric pressure. Through the UV curing treatment, the tensile stress of the silicon nitride layer is increased.

摘要翻译： 描述了制造氮化硅层的方法。 首先，提供基板。 然后，在基板上形成氮化硅层。 氮化硅层在低于标准大气压的气氛中UV固化。 通过UV固化处理，氮化硅层的拉伸应力增加。

公开(公告)号：US20090129888A1

公开(公告)日：2009-05-21

申请号：US11984455

申请日：2007-11-19

申请人： Kuo-Chen Hung

发明人： Kuo-Chen Hung

IPC分类号： F16B35/06

CPC分类号： F16B35/06 ,  F16B35/005

摘要： A slotted set screw includes a slot in an upper end surface, and a cut metal waste storing recess respectively formed at two ends of the slot. The cut metal waste storing recess is defined by a vertical wall and a flat bottom wall to have a large opening, separated from the slot for a little distance. The opening of the cut metal waste storing recess communicates with the outside of the threads of the set screw. Thus, cut metal waste may be stored in the cut metal waste storing recesses during cutting threads of the set screw, without falling into and remaining in the slot to result in extra cleaning work for the waste in the slot.

摘要翻译： 开槽固定螺钉包括在上端表面中的狭槽和分别形成在槽的两端的切割金属废物收纳凹部。 切割的金属废物储存凹部由垂直壁和平坦的底壁限定，以具有大的开口，与狭槽分开一段距离。 切割金属废物收纳凹部的开口与固定螺钉的螺纹的外部连通。 因此，切割金属废物可以在固定螺钉的螺纹切割期间存储在切割的金属废物储存凹部中，而不会落入并保留在槽中，从而对槽中的废物进行额外的清洁工作。

公开(公告)号：US20090104773A1

公开(公告)日：2009-04-23

申请号：US12345670

申请日：2008-12-30

申请人： Neng-Kuo Chen ,  Teng-Chun Tsai ,  Chien-Chung Huang

发明人： Neng-Kuo Chen ,  Teng-Chun Tsai ,  Chien-Chung Huang

IPC分类号： H01L21/768

CPC分类号： H01L21/76801 ,  H01L21/76837 ,  H01L29/78

摘要： A substrate having at least two metal oxide semiconductor devices of a same conductive type and a gap formed between the two devices is provided. A first stress layer is formed over the substrate to cover the metal-oxide semiconductor devices and the substrate, filling the gap. An etching back process is then performed to remove a portion of the stress material layer inside the gap. A second stress layer and a dielectric layer are sequentially formed on the first stress layer. The first stress layer and the second stress layer provide a same type of stress. A portion of the second stress layer is removed to form a contact opening. A second conductive layer is filled into the contact opening to form a contact.

摘要翻译： 提供了具有至少两个相同导电类型的金属氧化物半导体器件和在两个器件之间形成的间隙的衬底。 第一应力层形成在衬底上以覆盖金属氧化物半导体器件和衬底，填补间隙。 然后执行回蚀处理以去除间隙内部的应力材料层的一部分。 第一应力层和电介质层依次形成在第一应力层上。 第一应力层和第二应力层提供相同类型的应力。 去除第二应力层的一部分以形成接触开口。 将第二导电层填充到接触开口中以形成接触。

公开(公告)号：US20090068805A1

公开(公告)日：2009-03-12

申请号：US12265736

申请日：2008-11-06

申请人： Kun-Hsien Lee ,  Cheng-Tung Huang ,  Wen-Han Hung ,  Shyh-Fann Ting ,  Li-Shian Jeng ,  Tzyy-Ming Cheng ,  Neng-Kuo Chen ,  Shao-Ta Hsu ,  Teng-Chun Tsai ,  Chien-Chung Huang

发明人： Kun-Hsien Lee ,  Cheng-Tung Huang ,  Wen-Han Hung ,  Shyh-Fann Ting ,  Li-Shian Jeng ,  Tzyy-Ming Cheng ,  Neng-Kuo Chen ,  Shao-Ta Hsu ,  Teng-Chun Tsai ,  Chien-Chung Huang

IPC分类号： H01L21/8238

CPC分类号： H01L21/823807 ,  H01L21/823835 ,  H01L21/82385 ,  H01L21/823864 ,  H01L29/6653 ,  H01L29/6656 ,  H01L29/7843

摘要： A method of manufacturing a MOS transistor device is provided. First, a semiconductor substrate having a gate structure is prepared. The gate structure has two sidewalls and a liner on the sidewalls. Subsequently, a stressed cap layer is formed on the semiconductor substrate, and covers the gate structure and the liner. Next, an activating process is performed. Furthermore, the stressed cap layer is etched to be a salicide block. Afterward, a salicide process is performed to form a silicide layer on the regions that are not covered by the stressed cap layer.

摘要翻译： 提供一种制造MOS晶体管器件的方法。 首先，准备具有栅极结构的半导体基板。 栅极结构在侧壁上具有两个侧壁和衬垫。 随后，在半导体衬底上形成应力覆盖层，并覆盖栅极结构和衬垫。 接下来，执行激活处理。 此外，将应力覆盖层蚀刻成为自对准硅化物块。 之后，进行自对准处理以在未被应力覆盖层覆盖的区域上形成硅化物层。

公开(公告)号：US20090045828A1

公开(公告)日：2009-02-19

申请号：US12186914

申请日：2008-08-06

申请人： Li-Kuo Chen ,  Wen-Tsung Lee

发明人： Li-Kuo Chen ,  Wen-Tsung Lee

IPC分类号： G01R1/073 ,  G01R3/00

CPC分类号： G01R1/07378 ,  G01R3/00 ,  Y10T29/49204

摘要： The present invention provides a newly designed testing substrate for solving the problem with respect to fine pitches, and a method of manufacturing the testing substrate. The wiring space within the fine pitch can be enlarged by means of a circuit design with through holes, blind vias and stack vias, in association with process technologies for fine lines, blind vias, buried vias and filling vias. The manufactured testing substrate comprises a resting substrate and a probe base, being applicable to the test for IC's or packaged articles.

摘要翻译： 本发明提供了一种新设计的用于解决细小间距问题的测试基板，以及制造测试基板的方法。 与细线，盲孔，埋孔和填充通孔的工艺技术相关联，通过具有通孔，盲孔和叠层通孔的电路设计可以扩大细间距内的布线空间。 制造的测试基板包括静止基板和探针基座，适用于IC或封装物品的测试。

公开(公告)号：US20090034424A1

公开(公告)日：2009-02-05

申请号：US11930126

申请日：2007-10-31

申请人： Jiann-Liang Chen ,  Hsi-Feng Lu ,  Bing-Jie Huang ,  Kuo-Chen Lien

发明人： Jiann-Liang Chen ,  Hsi-Feng Lu ,  Bing-Jie Huang ,  Kuo-Chen Lien

IPC分类号： G06F11/07 ,  G06F21/20

CPC分类号： H04L41/06 ,  H04L41/0213 ,  H04L41/046 ,  H04L41/0803 ,  H04L41/082 ,  H04L41/0853 ,  H04L41/0866

摘要： Disclosed is a managing architecture and diagnostic method for remote configuration of heterogeneous local networks, which includes at least one sub-network agent, a local area network (LAN) management module and a remote LAN module. Each sub-network agent manages its sub-networks via its own management protocol, and collects the sub-networks' information. The LAN management module receives the requests from heterogeneous local networks via these sub-network agents, and converts the information associated with each request into a common information module (CIM) to seek a solution for each request. The remote LAN module receives the unsolved requests from the LAN management module via a channel, configures the heterogeneous local networks and uses compatible interface at a remote side to accomplish the management and diagnosis for the heterogeneous local networks.

摘要翻译： 公开了用于远程配置异构本地网络的管理架构和诊断方法，其包括至少一个子网络代理，局域网（LAN）管理模块和远程LAN模块。 每个子网络代理通过其自己的管理协议管理其子网，并收集子网的信息。 LAN管理模块通过这些子网络代理接收来自异构本地网络的请求，并将与每个请求相关联的信息转换为公共信息模块（CIM），以寻求每个请求的解决方案。 远程LAN模块通过一个通道接收来自LAN管理模块的未解决请求，配置异构本地网络，并在远端使用兼容接口，完成异构本地网络的管理和诊断。

公开(公告)号：US20080305600A1

公开(公告)日：2008-12-11

申请号：US11758623

申请日：2007-06-05

申请人： Hsiu-Lien Liao ,  Neng-Kuo Chen ,  Teng-Chun Tsai ,  Yi-Wei Chen

发明人： Hsiu-Lien Liao ,  Neng-Kuo Chen ,  Teng-Chun Tsai ,  Yi-Wei Chen

IPC分类号： H01L21/336 ,  H01J37/08

CPC分类号： H01L21/324 ,  H01L29/665 ,  H01L29/66575 ,  H01L29/78 ,  H01L29/7843

摘要： A method and an apparatus for fabricating a high tensile stress film includes providing a substrate, forming a poly stressor on the substrate, and performing an ultra violet rapid thermal process (UVRTP) for curing the poly stressor and adjusting its tensile stress status, thus the poly stressor serves as a high tensile stress film. Due to a combination of energy from photons and heat, the tensile stress status of the high tensile stress film is adjusted in a relatively shorter process period or under a relatively lower temperature.

摘要翻译： 用于制造高拉伸应力膜的方法和设备包括提供基板，在基板上形成多应力器，并且执行紫外线快速热处理（UVRTP），用于固化聚应力器并调整其拉伸应力状态，因此 多应力器作为高拉伸应力膜。 由于来自光子和热的能量的组合，高拉伸应力膜的拉伸应力状态在相对较短的工艺周期或相对较低的温度下调节。

公开(公告)号：US20080242020A1

公开(公告)日：2008-10-02

申请号：US11692912

申请日：2007-03-28

申请人： Jei-Ming Chen ,  Neng-Kuo Chen ,  Hsiu-Lien Liao ,  Teng-Chun Tsai ,  Chien-Chung Huang ,  Shih-Wei Sun

发明人： Jei-Ming Chen ,  Neng-Kuo Chen ,  Hsiu-Lien Liao ,  Teng-Chun Tsai ,  Chien-Chung Huang ,  Shih-Wei Sun

IPC分类号： H01L21/8238 ,  H01L21/336

CPC分类号： H01L21/0217 ,  H01L21/02337 ,  H01L21/02348 ,  H01L21/02351 ,  H01L21/02354 ,  H01L21/3105 ,  H01L21/3185 ,  H01L21/823807 ,  H01L29/165 ,  H01L29/66772 ,  H01L29/7843 ,  H01L29/7848

摘要： A method of manufacturing a metal-oxide-semiconductor (MOS) transistor device is disclosed. A semiconductor substrate and a gate structure positioned on the semiconductor substrate are prepared first. A source region and a drain region are included in the semiconductor substrate on two opposite sides of the gate structure. Subsequently, a stressed cap layer is formed on the semiconductor substrate, and covers the gate structure, the source region and the drain region. Next, an inert gas treatment is performed to change a stress value of the stressed cap layer. Because the stress value of the stressed cap layer can be adjusted easily by means of the present invention, one stressed cap layer can be applied to both the N-type MOS transistor and the P-type MOS transistor.

摘要翻译： 公开了一种制造金属氧化物半导体（MOS）晶体管器件的方法。 首先制备位于半导体衬底上的半导体衬底和栅极结构。 源极区域和漏极区域包括在栅极结构的两个相对侧上的半导体衬底中。 随后，在半导体衬底上形成应力覆盖层，并覆盖栅极结构，源极区和漏极区。 接下来，进行惰性气体处理以改变应力帽层的应力值。 由于通过本发明可以容易地调整应力覆盖层的应力值，因此可以将一个应力覆盖层施加到N型MOS晶体管和P型MOS晶体管两者。