公开(公告)号：US20110116078A1

公开(公告)日：2011-05-19

申请号：US12882531

申请日：2010-09-15

申请人： Kyoung Lae CHO ,  Hyun Min CHO

发明人： Kyoung Lae CHO ,  Hyun Min CHO

IPC分类号： G01B11/22 ,  H01L27/00 ,  H01L25/00

CPC分类号： H01L27/14632 ,  H01L27/14625 ,  H01L27/14627 ,  H01L27/14649

摘要： An image sensor comprises a photoelectric conversion element receiving light to accumulate photocharges, and a wavelength conversion layer formed above the photoelectric conversion element to convert light within a first wavelength band into light within a second wavelength band shorter than the first wavelength band and supply the converted light to the photoelectric conversion element.

摘要翻译： 图像传感器包括接收光以积累光电荷的光电转换元件，以及形成在光电转换元件上方的波长转换层，用于将第一波长带内的光转换为比第一波长带短的第二波长带内的光，并将经转换的 光到光电转换元件。

公开(公告)号：US07924624B2

公开(公告)日：2011-04-12

申请号：US12385705

申请日：2009-04-16

申请人： Jae Hong Kim ,  Kyoung Lae Cho ,  Dong Hyuk Chae ,  Yong June Kim

发明人： Jae Hong Kim ,  Kyoung Lae Cho ,  Dong Hyuk Chae ,  Yong June Kim

IPC分类号： G11C16/06

CPC分类号： G11C16/3454 ,  G11C11/5628 ,  G11C2211/5621

摘要： Provided are memory devices and memory programming methods. A memory device may include: a multi-bit cell array that includes a plurality of memory cells; a controller that extracts state information of each of the memory cells, divides the plurality of memory cells into a first group and a second group, assigns a first verify voltage to memory cells of the first group and assigns a second verify voltage to memory cells of the second group; and a programming unit that changes a threshold voltage of each memory cell of the first group until the threshold voltage of each memory cell of the first group is greater than or equal to the first verify voltage, and changes a threshold voltage of each memory cell of the second group until the threshold voltage of each memory cell of the second group is greater than or equal to the second verify voltage.

摘要翻译： 提供的是存储器件和存储器编程方法。 存储器设备可以包括：包括多个存储器单元的多位单元阵列; 提取每个存储单元的状态信息的控制器，将多个存储器单元划分成第一组和第二组，将第一验证电压分配给第一组的存储单元，并将第二验证电压分配给存储单元 第二组 以及编程单元，其改变第一组的每个存储单元的阈值电压，直到第一组的每个存储单元的阈值电压大于或等于第一验证电压，并且改变每个存储单元的阈值电压 直到第二组的每个存储单元的阈值电压大于或等于第二验证电压。

公开(公告)号：US07911842B2

公开(公告)日：2011-03-22

申请号：US12081568

申请日：2008-04-17

申请人： Ju-hee Park ,  Jae-woong Hyun ,  Yoon-dong Park ,  Kyoung-lae Cho ,  Sung-jae Byun ,  Seung-hwan Song ,  Jun-jin Kong ,  Sung-chung Park

发明人： Ju-hee Park ,  Jae-woong Hyun ,  Yoon-dong Park ,  Kyoung-lae Cho ,  Sung-jae Byun ,  Seung-hwan Song ,  Jun-jin Kong ,  Sung-chung Park

IPC分类号： G11C16/04

CPC分类号： H01L29/7883 ,  G11C16/10

摘要： Provided are a memory cell programming method and a semiconductor device which may be capable of simultaneously writing a bit of data and then another bit of the data to a plurality of memory blocks. The memory programming method, in which M bits of data are written to a plurality of memory blocks, may include a data division operation and a data writing operation where M may be a natural number. In the data division operation, the plurality of memory blocks may be divided into a plurality of memory block groups. In the data writing operation, an ith bit of the data may be simultaneously written to two or more memory block groups from among the plurality memory block groups, and then an i+1th bit of the data may be simultaneously written to the two or more memory block groups from among the plurality memory block groups, where i is a natural number less than M.

摘要翻译： 提供了一种存储器单元编程方法和半导体器件，其可以能够同时将数据位和数据的另一位写入多个存储块。 其中将M位数据写入多个存储块的存储器编程方法可以包括数据分割操作和数据写入操作，其中M可以是自然数。 在数据划分操作中，多个存储块可以被划分为多个存储块组。 在数据写入操作中，数据的第i位可以从多个存储器块组中同时写入两个或更多个存储块组，然后数据的第i + 1位可以被同时写入两个或更多个 多个存储块组中的存储块组，其中i是小于M的自然数。

公开(公告)号：US20110019049A1

公开(公告)日：2011-01-27

申请号：US12844381

申请日：2010-07-27

申请人： Young Gu Jin ,  Kwan-Young Oh ,  Samuel Sungmok Lee ,  Kwang-Chol Choe ,  Se-Won Seo ,  Yoon-Dong Park ,  Eric Fossum ,  Kyoung-Lae Cho

发明人： Young Gu Jin ,  Kwan-Young Oh ,  Samuel Sungmok Lee ,  Kwang-Chol Choe ,  Se-Won Seo ,  Yoon-Dong Park ,  Eric Fossum ,  Kyoung-Lae Cho

IPC分类号： H01L27/146 ,  H04N5/335

CPC分类号： H01L27/14609 ,  G01S7/4863 ,  H01L27/14643 ,  H04N5/335 ,  H04N5/3741 ,  H04N5/378

摘要： A unit pixel of a photo detecting apparatus includes a photogate, a transfer gate and a floating diffusion region. The photogate includes a junction gate extending in a first direction and a plurality of finger gates extending from the junction gate in a second direction substantially perpendicular to the first direction. The transfer gate is formed adjacent to the junction gate. The floating diffusion region is formed adjacent to the first transfer gate.

摘要翻译： 光检测装置的单位像素包括光栅，传输门和浮动扩散区。 光栅包括沿第一方向延伸的接合栅极和从基本上垂直于第一方向的第二方向从接合栅极延伸的多个指状栅极。 传输门形成在接合栅极附近。 浮动扩散区域形成为与第一传输门相邻。

公开(公告)号：US07864574B2

公开(公告)日：2011-01-04

申请号：US12453108

申请日：2009-04-29

申请人： Kyoung Lae Cho ,  Yong June Kim ,  Seung-Hwan Song ,  Jun Jin Kong

发明人： Kyoung Lae Cho ,  Yong June Kim ,  Seung-Hwan Song ,  Jun Jin Kong

IPC分类号： G11C11/34

CPC分类号： G11C16/10 ,  G11C11/5628 ,  G11C2211/5621

摘要： Provided are memory devices and memory programming methods. A memory device may include a multi-bit cell array including a plurality of multi-bit cells, a programming unit configured to program a first data page in the plurality of multi-bit cells and to program a second data page in the multi-bit cells with the programmed first data page, a first controller configured to divide the multi-bit cells with the programmed first data page into a first group and a second group, and a second controller configured to set a target threshold voltage interval of each of the multi-bit cells included in the first group based on first read voltage levels and the second data page, and to set a target threshold voltage interval of each of the multi-bit cells included in the second group based on second read threshold voltage levels and the second data page.

摘要翻译： 提供的是存储器件和存储器编程方法。 存储器件可以包括包括多个多位单元的多位单元阵列，编程单元，被配置为对多个多位单元中的第一数据页进行编程，并编程多位单元中的第二数据页 具有编程的第一数据页的单元，被配置为将多位单元与编程的第一数据页划分为第一组和第二组的第一控制器，以及配置成将每个的第一数据页的目标阈值电压间隔 基于第一读取电压电平和第二数据页面包括在第一组中的多位单元，并且基于第二读取阈值电压电平来设置包括在第二组中的每个多位单元的目标阈值电压间隔，以及 第二个数据页面。

公开(公告)号：US20100277622A1

公开(公告)日：2010-11-04

申请号：US12662673

申请日：2010-04-28

申请人： Eric Fossum ,  Kyoung Lae Cho ,  Yoon Dong Park ,  Young Gu Jin ,  Seung Hoon Lee ,  Sung-Jae Byun

发明人： Eric Fossum ,  Kyoung Lae Cho ,  Yoon Dong Park ,  Young Gu Jin ,  Seung Hoon Lee ,  Sung-Jae Byun

IPC分类号： H04N5/217

CPC分类号： H04N5/3575 ,  H04N5/378

摘要： An image sensor including a noise removing unit may sense images accurately by measuring the amount of noise generated when the image sensor does not perform a sensing operation, storing information about the measured noise amount in each pixel, and removing photocharge corresponding to the information about the measured noise amount during image sensing.

摘要翻译： 包括噪声消除单元的图像传感器可以通过测量当图像传感器不执行感测操作时产生的噪声量，存储关于每个像素中测得的噪声量的信息，并且除去与关于 测量图像感测时的噪声量。

公开(公告)号：US07729175B2

公开(公告)日：2010-06-01

申请号：US12010481

申请日：2008-01-25

申请人： Kyoung-lae Cho ,  Yoon-dong Park ,  Jun-jin Kong ,  Seung-hoon Lee ,  Jae-woong Hyun ,  Sung-jae Byun ,  Ju-hee Park ,  Seung-hwan Song

发明人： Kyoung-lae Cho ,  Yoon-dong Park ,  Jun-jin Kong ,  Seung-hoon Lee ,  Jae-woong Hyun ,  Sung-jae Byun ,  Ju-hee Park ,  Seung-hwan Song

IPC分类号： G11C11/34

CPC分类号： G11C16/10 ,  G11C7/1006 ,  G11C11/5628 ,  G11C11/5642 ,  G11C2211/5642

摘要： Provided are a method of writing/reading data into/from a memory cell and a page buffer using different codes for the writing and reading operations. The method of writing/reading data into/from a memory cell that has a plurality of threshold voltage distributions includes a data writing operation and a data reading operation. In the data writing operation, data having a plurality of bits is written into the memory cell by using a plurality of writing codes corresponding to threshold voltage distributions. In the data reading operation, the data having a plurality of bits is read from the memory cell by using reading codes corresponding to the threshold voltage distributions from among the threshold voltage distributions. In the method of writing/reading data into/from a memory cell, a part of the writing codes is different from a corresponding part of the reading codes.

摘要翻译： 提供了一种将数据写入/从存储单元读取数据的方法和使用不同代码进行写入和读取操作的页面缓冲器。 对具有多个阈值电压分布的存储单元写入/读取数据的方法包括数据写入操作和数据读取操作。 在数据写入操作中，通过使用与阈值电压分布对应的多个写入代码，将具有多个位的数据写入存储单元。 在数据读取操作中，通过使用与阈值电压分布中的阈值电压分布相对应的读取代码，从存储单元读取具有多个位的数据。 在将数据写入/从存储单元读取的方法中，写入代码的一部分与读取代码的相应部分不同。

公开(公告)号：US07639539B2

公开(公告)日：2009-12-29

申请号：US11905674

申请日：2007-10-03

申请人： Kyoung Lae Cho ,  Jun Jin Kong ,  Young Hwan Lee ,  Nam Phil Jo ,  Sung Chung Park ,  Seung-Hwan Song

发明人： Kyoung Lae Cho ,  Jun Jin Kong ,  Young Hwan Lee ,  Nam Phil Jo ,  Sung Chung Park ,  Seung-Hwan Song

IPC分类号： G11C16/04

CPC分类号： G11C16/10 ,  G11C11/5628 ,  G11C16/3418 ,  G11C16/3427

摘要： A method and an apparatus for programming data of memory cells considering coupling are provided. The method includes: calculating a change of a threshold voltage based on source data of the memory cells; converting source data which will be programmed based on the calculated change of the threshold voltage; and programming the converted source data.

摘要翻译： 提供了考虑耦合的存储器单元的数据编程方法和装置。 该方法包括：基于存储器单元的源数据计算阈值电压的变化; 基于所计算的阈值电压的变化来转换将被编程的源数据; 并对转换的源数据进行编程。

公开(公告)号：US20090296466A1

公开(公告)日：2009-12-03

申请号：US12385705

申请日：2009-04-16

申请人： Jae Hong Kim ,  Kyoung Lae Cho ,  Dong Hyuk Chae ,  Yong June Kim

发明人： Jae Hong Kim ,  Kyoung Lae Cho ,  Dong Hyuk Chae ,  Yong June Kim

IPC分类号： G11C16/02 ,  G11C16/06

CPC分类号： G11C16/3454 ,  G11C11/5628 ,  G11C2211/5621

摘要： Provided are memory devices and memory programming methods. A memory device may include: a multi-bit cell array that includes a plurality of memory cells; a controller that extracts state information of each of the memory cells, divides the plurality of memory cells into a first group and a second group, assigns a first verify voltage to memory cells of the first group and assigns a second verify voltage to memory cells of the second group; and a programming unit that changes a threshold voltage of each memory cell of the first group until the threshold voltage of each memory cell of the first group is greater than or equal to the first verify voltage, and changes a threshold voltage of each memory cell of the second group until the threshold voltage of each memory cell of the second group is greater than or equal to the second verify voltage.

摘要翻译： 提供的是存储器件和存储器编程方法。 存储器设备可以包括：包括多个存储器单元的多位单元阵列; 提取每个存储单元的状态信息的控制器，将多个存储单元划分为第一组和第二组，将第一验证电压分配给第一组的存储单元，并将第二验证电压分配给存储单元 第二组 以及编程单元，其改变第一组的每个存储单元的阈值电压，直到第一组的每个存储单元的阈值电压大于或等于第一验证电压，并且改变每个存储单元的阈值电压 直到第二组的每个存储单元的阈值电压大于或等于第二验证电压。

公开(公告)号：US20090207671A1

公开(公告)日：2009-08-20

申请号：US12216745

申请日：2008-07-10

申请人： Dong Hun Yu ,  Kyoung Lae Cho ,  Dong Hyuk Chae ,  Jun Jin Kong ,  Jae Hong Kim ,  Seung-Hwan Song

发明人： Dong Hun Yu ,  Kyoung Lae Cho ,  Dong Hyuk Chae ,  Jun Jin Kong ,  Jae Hong Kim ,  Seung-Hwan Song

IPC分类号： G11C7/00 ,  G11C29/04

CPC分类号： G11C7/1006 ,  G11C7/14 ,  G11C11/5642 ,  G11C29/00 ,  G11C29/028 ,  G11C29/42 ,  G11C29/50 ,  G11C2211/5634

摘要： Example embodiments may relate to a method and an apparatus for reading data stored in a memory, for example, providing a method and an apparatus for controlling a reference voltage based on an error of the stored data. Example embodiments may provide a memory data detecting apparatus including a first voltage comparator to compare a threshold voltage of a memory cell with a first reference voltage, a first data determiner to determine a value of at least one data bit stored in the memory cell according to a result of the comparison, an error verifier to verify whether an error occurs in the determined value, a reference voltage determiner to determine a second reference voltage that is lower than the first reference voltage based on a result of the verification, and a second data determiner to re-determine the value of the data based on the determined second reference voltage.

摘要翻译： 示例性实施例可以涉及用于读取存储在存储器中的数据的方法和装置，例如提供一种基于存储的数据的错误来控制参考电压的方法和装置。 示例性实施例可以提供一种存储器数据检测装置，其包括用于将存储器单元的阈值电压与第一参考电压进行比较的第一电压比较器，第一数据确定器，用于根据存储器单元存储的至少一个数据位的值，根据 比较结果，用于验证所确定的值是否发生错误验证器，基于验证结果确定低于第一参考电压的第二参考电压的参考电压确定器，以及第二数据 确定器，以基于所确定的第二参考电压重新确定数据的值。