摘要:
An image sensor including a noise removing unit may sense images accurately by measuring the amount of noise generated when the image sensor does not perform a sensing operation, storing information about the measured noise amount in each pixel, and removing photocharge corresponding to the information about the measured noise amount during image sensing.
摘要:
An image sensor including a noise removing unit may sense images accurately by measuring the amount of noise generated when the image sensor does not perform a sensing operation, storing information about the measured noise amount in each pixel, and removing photocharge corresponding to the information about the measured noise amount during image sensing.
摘要:
A unit pixel of a photo detecting apparatus includes a photogate, a transfer gate and a floating diffusion region. The photogate includes a junction gate extending in a first direction and a plurality of finger gates extending from the junction gate in a second direction substantially perpendicular to the first direction. The transfer gate is formed adjacent to the junction gate. The floating diffusion region is formed adjacent to the first transfer gate.
摘要:
A unit pixel of a photo detecting apparatus includes a photogate, a transfer gate and a floating diffusion region. The photogate includes a junction gate extending in a first direction and a plurality of finger gates extending from the junction gate in a second direction substantially perpendicular to the first direction. The transfer gate is formed adjacent to the junction gate. The floating diffusion region is formed adjacent to the first transfer gate.
摘要:
A sensor, including a plurality of photo gate pairs on a semiconductor substrate, each of the photo gate pairs including a first photo gate and a second photo gate, a first shared floating diffusion region in the semiconductor substrate, and a plurality of first transmission transistors on the semiconductor substrate, wherein each of the plurality of first transmission transistors is adapted to transmit charges to the first shared floating diffusion region in response to a first transmission control signal, the charges being generated in the semiconductor substrate under the first photo gate of each of the plurality of photo gate pairs.
摘要:
A sensor, including a plurality of photo gate pairs on a semiconductor substrate, each of the photo gate pairs including a first photo gate and a second photo gate, a first shared floating diffusion region in the semiconductor substrate, and a plurality of first transmission transistors on the semiconductor substrate, wherein each of the plurality of first transmission transistors is adapted to transmit charges to the first shared floating diffusion region in response to a first transmission control signal, the charges being generated in the semiconductor substrate under the first photo gate of each of the plurality of photo gate pairs.
摘要:
The image sensor includes a pixel array including a plurality of unit pixels each including a single transistor and a photodiode connected to a body of the single transistor, a row driver block configured to enable one of a plurality of rows in the pixel array to enter a readout mode, and a readout block configured to sense and amplify a pixel signal output from each of a plurality of unit pixels included in the row that has entered the readout mode.
摘要:
An image sensor device may include a dual-gated charge storage region within a substrate. The dual-gated charge storage region includes first and second diodes within a common charge generating region. This charge generating region is configured to receive light incident on a surface of the image sensor device. The first and second diodes include respective first conductivity type regions responsive to first and second gate signals, respectively. These first and second gate signals are active during non-overlapping time intervals.
摘要:
The image sensor includes a pixel array including a plurality of unit pixels each including a single transistor and a photodiode connected to a body of the single transistor, a row driver block configured to enable one of a plurality of rows in the pixel array to enter a readout mode, and a readout block configured to sense and amplify a pixel signal output from each of a plurality of unit pixels included in the row that has entered the readout mode.
摘要:
An image sensor device may include a dual-gated charge storage region within a substrate. The dual-gated charge storage region includes first and second diodes within a common charge generating region. This charge generating region is configured to receive light incident on a surface of the image sensor device. The first and second diodes include respective first conductivity type regions responsive to first and second gate signals, respectively. These first and second gate signals are active during non-overlapping time intervals.