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公开(公告)号：US09023577B2
公开(公告)日：2015-05-05
申请号：US13346166
申请日：2012-01-09
CPC分类号： G03F7/0048 , G03F7/0397 , G03F7/2041
摘要： A resist composition containing a base component (A) which exhibits changed solubility in a developing solution under the action of acid, and an acid generator component (B) which generates acid upon exposure, dissolved in an organic solvent (S) which contains an alcohol-based solvent, wherein the base component (A) contains a copolymer (A1) that exhibits increased polarity under the action of acid, and the copolymer (A1) is a copolymer in which a structural unit (a2), which is derived from an acrylate ester in which the hydrogen atom bonded to the carbon atom on the α-position may be substituted with a substituent, and includes a lactone-containing cyclic group, is dispersed uniformly within the copolymer molecule.
摘要翻译： 一种抗蚀剂组合物，其含有在酸的作用下在显影液中显示出改变的溶解性的基础成分（A）和曝露后产生酸的酸产生剂成分（B），溶解在含有醇的有机溶剂（S） 的基础成分（A）含有在酸的作用下显示出极性增加的共聚物（A1），共聚物（A1）是共聚物，其中结构单元（a2）衍生自 丙烯酸酯，其中与α-位上的碳原子键合的氢原子可以被取代基取代，并且包括含内酯的环状基团，均匀地分散在共聚物分子内。
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公开(公告)号：US08580481B2
公开(公告)日：2013-11-12
申请号：US13242879
申请日：2011-09-23
申请人： Hikaru Momose , Atsushi Ootake , Akifumi Ueda , Tadayuki Fujiwara , Masaru Takeshita , Ryotaro Hayashi , Takeshi Iwai
发明人： Hikaru Momose , Atsushi Ootake , Akifumi Ueda , Tadayuki Fujiwara , Masaru Takeshita , Ryotaro Hayashi , Takeshi Iwai
CPC分类号： C08F220/28 , G03F7/0397 , Y10S430/111
摘要： The resist polymer of the present invention comprises a specific constitutional unit having a cyano group, a constitutional unit having an acid-dissociable group, and a specific constitutional unit having a lactone skeleton. When the above polymer is used as a resist resin in DUV excimer laser lithography or electron beam lithography, it exhibits high sensitivity and high resolution, and provides a good resist pattern shape, having a small degree of occurrence of line edge roughness or generation of microgels.
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43.发明授权Resist composition for immersion exposure, method of forming resist pattern, and fluorine-containing resin 有权用于浸渍曝光的抗蚀剂组合物，抗蚀剂图案形成方法和含氟树脂公开(公告)号：US08530598B2
公开(公告)日：2013-09-10
申请号：US13348989
申请日：2012-01-12
申请人： Masaru Takeshita , Yasuhiro Yoshii
发明人： Masaru Takeshita , Yasuhiro Yoshii
IPC分类号： C08F214/18 , C08F220/68
CPC分类号： G03F7/2041 , C08F220/18 , C08F220/22 , C08F220/28 , G03F7/0046 , G03F7/0382 , G03F7/0397
摘要： A resist composition for immersion exposure including: a base component (A) which exhibits changed solubility in an alkali developing solution under the action of acid; an acid-generator component (B) which generates acid upon exposure; and a fluorine-containing resin component (F); dissolved in an organic solvent (S), the fluorine-containing resin component (F) including a structural unit (f1) containing a fluorine atom, a structural unit (f2) containing a hydrophilic group-containing aliphatic hydrocarbon group, and a structural unit (f3) derived from an acrylate ester containing a tertiary alkyl group-containing group or an alkoxyalkyl group.
摘要翻译： 一种用于浸渍曝光的抗蚀剂组合物，包括：在酸性作用下在碱性显影液中表现出改变的溶解度的碱成分（A） 暴露时产生酸的酸发生剂组分（B）; 和含氟树脂组分（F）; 溶解在有机溶剂（S）中的含有含有氟原子的结构单元（f1）的含氟树脂成分（F），含有亲水性基团的脂肪族烃基的结构单元（f2）和结构单元 （f3）衍生自含有含叔烷基的基团或烷氧基烷基的丙烯酸酯。
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公开(公告)号：US08497395B2
公开(公告)日：2013-07-30
申请号：US13313993
申请日：2011-12-07
IPC分类号： C07C211/00
CPC分类号： C07C311/09 , C07C381/12 , C07C2601/08 , C07C2603/74 , C07D307/33 , C07D307/93 , G03F7/0045 , G03F7/0397
摘要： A compound represented by general formula (c1) (R1 represents an alicyclic group of 5 or more carbon atoms which may have a substituent; X represents a divalent linking group; Y represents a linear, branched or cyclic alkylene group or an arylene group; Rf represents a hydrocarbon group containing a fluorine atom; and M+ represents an organic cation or a metal cation).
摘要翻译： 由通式（c1）表示的化合物（R1表示可以具有取代基的碳原子数为5以上的脂环式基团; X表示二价连接基团; Y表示直链状，支链状或环状的亚烷基或亚芳基） 表示含氟原子的烃基; M +表示有机阳离子或金属阳离子）。
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公开(公告)号：US08092979B2
公开(公告)日：2012-01-10
申请号：US12496232
申请日：2009-07-01
申请人： Hikaru Momose , Atsushi Ootake , Akifumi Ueda , Tadayuki Fujiwara , Masaru Takeshita , Ryotaro Hayashi , Takeshi Iwai
发明人： Hikaru Momose , Atsushi Ootake , Akifumi Ueda , Tadayuki Fujiwara , Masaru Takeshita , Ryotaro Hayashi , Takeshi Iwai
IPC分类号： G03F7/039 , C08F222/14 , C08F222/20 , C08F222/22
CPC分类号： C08F220/28 , G03F7/0397 , Y10S430/111
摘要： The resist polymer of the present invention comprises a specific constitutional unit having a cyano group, a constitutional unit having an acid-dissociable group, and a specific constitutional unit having a lactone skeleton. When the above polymer is used as a resist resin in DUV excimer laser lithography or electron beam lithography, it exhibits high sensitivity and high resolution, and provides a good resist pattern shape, having a small degree of occurrence of line edge roughness or generation of microgels.
摘要翻译： 本发明的抗蚀剂聚合物包含具有氰基的特定结构单元，具有酸解离基的结构单元和具有内酯骨架的特定结构单元。 当在DUV准分子激光光刻或电子束光刻中使用上述聚合物作为抗蚀剂树脂时，其表现出高灵敏度和高分辨率，并且提供良好的抗蚀剂图案形状，线边缘粗糙度的发生程度小或微凝胶的产生 。
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公开(公告)号：US07972762B2
公开(公告)日：2011-07-05
申请号：US11913912
申请日：2006-04-26
申请人： Masaaki Muroi , Kota Atsuchi , Takahiro Nakamura , Masakazu Yamada , Kensuke Saisyo , Masaru Takeshita , Takanori Yamagishi , Tomo Oikawa
发明人： Masaaki Muroi , Kota Atsuchi , Takahiro Nakamura , Masakazu Yamada , Kensuke Saisyo , Masaru Takeshita , Takanori Yamagishi , Tomo Oikawa
CPC分类号： G03F7/0397 , C08F220/28 , Y10S430/111
摘要： Provided are a positive resist composition and a resist pattern forming method having fewer defects and superior lithographic characteristics. The positive resist composition includes a resin component (A) which has on a main chain a structural unit derived from an (α-lower alkyl)acrylate ester and exhibits increased alkali solubility under the action of an acid, and an acid generating component (B) which generates the acid upon irradiation with radiation, in which the resin component (A) is a copolymer having at least two structural units which is obtained by incorporating an acid when polymerizing at least one monomer for the production thereof.
摘要翻译： 提供了具有较少缺陷和优异的光刻特性的正型抗蚀剂组合物和抗蚀剂图案形成方法。 正型抗蚀剂组合物包括在主链上具有衍生自（α-低级烷基）丙烯酸酯的结构单元并且在酸的作用下表现出增加的碱溶解性的酸性产生组分（B）的树脂组分（A） ），其中树脂组分（A）是具有至少两个结构单元的共聚物，其中该结构单元在聚合至少一种用于制备它们的单体时通过掺入酸而获得。
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公开(公告)号：US07964331B2
公开(公告)日：2011-06-21
申请号：US12303944
申请日：2007-05-18
申请人： Masaru Takeshita
发明人： Masaru Takeshita
CPC分类号： G03F7/0397 , G03F7/0045 , Y10S430/111
摘要： A positive resist composition including a resin component (A) which exhibits increased alkali solubility under action of acid and an acid-generator component (B) which generates acid upon exposure, the resin component (A) including: a polymer (A1) including a structural unit (a0) represented by general formula (a0) shown below and no structural unit (a1) derived from an acrylate ester containing an acetal-type acid dissociable, dissolution inhibiting group, exclusive of the structural unit (a0), and a polymer (A2) including the structural unit (a1) and no structural unit (a0).
摘要翻译： 一种正型抗蚀剂组合物，其包含在酸作用下表现出增加的碱溶性的树脂组分（A）和暴露时产生酸的酸产生剂组分（B），所述树脂组分（A）包括：包含 由下述通式（a0）表示的结构单元（a0），不包含不含结构单元（a0）的含有缩醛型酸解离性的溶解抑制基团的丙烯酸酯衍生物的结构单元（a1） （A2），包括结构单元（a1）和结构单元（a0）。
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48.发明授权Resin for photoresist composition, photoresist composition and method for forming resist pattern 有权用于光致抗蚀剂组合物的树脂，光致抗蚀剂组合物和形成抗蚀剂图案的方法公开(公告)号：US07829259B2
公开(公告)日：2010-11-09
申请号：US12365752
申请日：2009-02-04
申请人： Hideo Hada , Masaru Takeshita , Shogo Matsumaru , Hiroaki Shimizu
发明人： Hideo Hada , Masaru Takeshita , Shogo Matsumaru , Hiroaki Shimizu
CPC分类号： G03F7/0045 , G03F7/0397 , Y10S430/109 , Y10S430/115
摘要： A resin for photoresist compositions is disclosed with excellent resolution and line edge roughness characteristics. A photoresist composition and a method for forming a resist pattern using such a resin are also disclosed. The resin has a hydroxyl group bonded to a carbon atom at a polymer terminal, and the carbon atom in the α-position to the hydroxyl group has at least one electron attractive group.
摘要翻译： 公开了用于光致抗蚀剂组合物的树脂，其具有优异的分辨率和线边缘粗糙度特性。 还公开了光致抗蚀剂组合物和使用这种树脂形成抗蚀剂图案的方法。 该树脂在聚合物末端具有与碳原子键合的羟基，并且与羟基的α-位上的碳原子具有至少一个吸电子基团。
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公开(公告)号：US20100159389A1
公开(公告)日：2010-06-24
申请号：US12160742
申请日：2006-12-26
申请人： Masaru Takeshita , Jun Iwashita , Takeshi Iwai , Yuji Ohgomori
发明人： Masaru Takeshita , Jun Iwashita , Takeshi Iwai , Yuji Ohgomori
IPC分类号： G03F7/004 , G03F7/20 , C08F224/00
CPC分类号： G03F7/0397 , C08F220/28 , G03F7/0382 , Y10S430/111
摘要： A resist composition including a base resin component (A) and an acid-generator component (B) which generates acid upon exposure, the component (A) including a resin (A1) which has a structural unit (a0) represented by general formula (a-0) shown below: wherein R represents a hydrogen atom, a halogen atom, a lower alkyl group or a halogenated lower alkyl group; a represents an integer of 0 to 2; b represents an integer of 1 to 3; c represents an integer of 1 to 2; and a+b is an integer of 2 or more.
摘要翻译： 包含曝光时产生酸的基础树脂组分（A）和酸产生剂组分（B）的抗蚀剂组合物包括具有由通式（a）表示的结构单元（a0）的树脂（A1）的组分（A） a-0）：其中R表示氢原子，卤素原子，低级烷基或卤代低级烷基; a表示0〜2的整数， b表示1〜3的整数， c表示1〜2的整数， a + b为2以上的整数。
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公开(公告)号：US20090263743A1
公开(公告)日：2009-10-22
申请号：US12496232
申请日：2009-07-01
申请人： Hikaru MOMOSE , Atsushi Ootake , Akifumi Ueda , Tadayuki Fujiwara , Masaru Takeshita , Ryotaro Hayashi , Takeshi Iwai
发明人： Hikaru MOMOSE , Atsushi Ootake , Akifumi Ueda , Tadayuki Fujiwara , Masaru Takeshita , Ryotaro Hayashi , Takeshi Iwai
CPC分类号： C08F220/28 , G03F7/0397 , Y10S430/111
摘要： The resist polymer of the present invention comprises a specific constitutional unit having a cyano group, a constitutional unit having an acid-dissociable group, and a specific constitutional unit having a lactone skeleton. When the above polymer is used as a resist resin in DUV excimer laser lithography or electron beam lithography, it exhibits high sensitivity and high resolution, and provides a good resist pattern shape, having a small degree of occurrence of line edge roughness or generation of microgels.
摘要翻译： 本发明的抗蚀剂聚合物包含具有氰基的特定结构单元，具有酸解离基的结构单元和具有内酯骨架的特定结构单元。 当在DUV准分子激光光刻或电子束光刻中使用上述聚合物作为抗蚀剂树脂时，其表现出高灵敏度和高分辨率，并且提供良好的抗蚀剂图案形状，线边缘粗糙度的发生程度小或微凝胶的产生 。
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