公开(公告)号：US5589737A

公开(公告)日：1996-12-31

申请号：US354122

申请日：1994-12-06

Applicant: Michael Barnes ,  Neil Benjamin ,  John Holland ,  Richard Beer ,  Robert Veltrop

Inventor： Michael Barnes ,  Neil Benjamin ,  John Holland ,  Richard Beer ,  Robert Veltrop

IPC: H05H1/46 ,  C23C16/507 ,  H01J37/32 ,  H01L21/205 ,  H01L21/302 ,  H01L21/3065 ,  H01J7/24

CPC classification number: H01J37/3222 ,  H01J37/321 ,  H01J37/32238

Abstract: A plasma processor for large workpieces includes a vacuum chamber having plural individually supported dielectric windows for coupling an r.f. field originating outside of the chamber into the chamber to excite the plasma. A planar coil for inductively deriving the field has plural segments with the same electrical length, each including an element connected in parallel with an element of another segment.

Abstract translation: 用于大型工件的等离子体处理器包括具有多个单独支撑的电介质窗口的真空室，用于连接r.f。 来自腔室外部的腔室进入腔室以激发等离子体。 用于感应地导出场的平面线圈具有多个具有相同电长度的段，每个段具有与另一段的元件并联连接的元件。

公开(公告)号：US20100041238A1

公开(公告)日：2010-02-18

申请号：US12605027

申请日：2009-10-23

Applicant: David J. Cooperberg ,  Vahid Vahedi ,  Douglas Ratto ,  Harmeet Singh ,  Neil Benjamin

Inventor： David J. Cooperberg ,  Vahid Vahedi ,  Douglas Ratto ,  Harmeet Singh ,  Neil Benjamin

IPC: H01L21/465

CPC classification number: C23C16/45574 ,  C23C16/507 ,  H01J37/321 ,  H01J37/3244 ,  H01J2237/3323 ,  H01J2237/3344

Abstract: A tunable multi-zone injection system for a plasma processing system for plasma processing of substrates such as semiconductor wafers. The system includes a plasma processing chamber, a substrate support for supporting a substrate within the processing chamber, a dielectric member having an interior surface facing the substrate support, the dielectric member forming a wall of the processing chamber, a gas injector fixed to part of or removably mounted in an opening in the dielectric window, the gas injector including a plurality of gas outlets supplying process gas at adjustable flow rates to multiple zones of the chamber, and an RF energy source such as a planar or non-planar spiral coil which inductively couples RF energy through the dielectric member and into the chamber to energize the process gas into a plasma state. The injector can include an on-axis outlet supplying process gas at a first flow rate to a central zone and off-axis outlets supplying the same process gas at a second flow rate to an annular zone surrounding the central zone. The arrangement permits modification of gas delivery to meet the needs of a particular processing regime by allowing independent adjustment of the gas flow to multiple zones in the chamber. In addition, compared to consumable showerhead arrangements, a removably mounted gas injector can be replaced more easily and economically.

Abstract translation: 一种用于等离子体处理系统的可调多区域注入系统，用于诸如半导体晶片的衬底的等离子体处理。 该系统包括等离子体处理室，用于在处理室内支撑衬底的衬底支撑件，具有面向衬底支撑件的内表面的电介质构件，形成处理室壁的电介质构件，固定到 或可移除地安装在电介质窗口的开口中，气体注射器包括多个气体出口，其以可调节的流速向腔室的多个区域供应处理气体，以及RF能量源，例如平面或非平面螺旋线圈，其中 将RF能量感应耦合通过电介质构件并进入腔室，以将处理气体激励成等离子体状态。 喷射器可以包括轴向出口，其以第一流量向中心区域供应处理气体，并且离轴出口以相同的处理气体以第二流量供应到围绕中心区域的环形区域。 该装置允许气体输送的修改以通过允许独立调节气体流到腔室中的多个区域来满足特定处理状态的需要。 此外，与消耗式喷头装置相比，可以更容易且经济地更换可移除安装的气体喷射器。

公开(公告)号：US20090215201A1

公开(公告)日：2009-08-27

申请号：US12436443

申请日：2009-05-06

Applicant: Neil Benjamin ,  Robert Steger

Inventor： Neil Benjamin ,  Robert Steger

IPC: H01L21/465 ,  H01L21/66

CPC classification number: H01L21/67248 ,  H01J37/32724 ,  H01J2237/2001 ,  H01J2237/334 ,  H01L21/67069 ,  H01L21/67103 ,  H01L21/6833 ,  H01L21/68714

Abstract: A chuck for a plasma processor comprises a temperature-controlled base, a thermal insulator, a flat support, and a heater. The temperature-controlled base is controlled in operation a temperature below the desired temperature of a workpiece. The thermal insulator is disposed over at least a portion of the temperature-controlled base. The flat support holds a workpiece and is disposed over the thermal insulator. A heater is embedded within the flat support and/or mounted to an underside of the flat support. The heater includes a plurality of heating elements that heat a plurality of corresponding heating zones. The power supplied and/or temperature of each heating element is controlled independently. The heater and flat support have a combined temperature rate change of at least 1° C. per second.

Abstract translation: 用于等离子体处理器的卡盘包括温度控制的基座，绝热体，平坦的支架和加热器。 温度控制的基座在工作温度下控制在低于工件所需温度的温度。 热绝缘体设置在温度受控基底的至少一部分上。 平面支撑件保持工件并且设置在绝热体上方。 加热器嵌入在平坦支撑件内和/或安装到平坦支撑件的下侧。 加热器包括多个加热元件，其加热多个相应的加热区。 每个加热元件的供电功率和/或温度都是独立控制的。 加热器和平坦支架的组合温度变化率每秒至少1℃。

公开(公告)号：US20090081811A1

公开(公告)日：2009-03-26

申请号：US12145389

申请日：2008-06-24

Applicant: Neil Benjamin

Inventor： Neil Benjamin

IPC: H01L21/00 ,  H02J1/10

CPC classification number: H01J37/32045 ,  H01J37/32174 ,  Y10T307/258

Abstract: A distributed power arrangement to provide local power delivery in a plasma processing system during substrate processing is provided. The distributed power arrangement includes a set of direct current (DC) power supply units. The distributed power arrangement also includes a plurality of power generators, which is configured to receive power from the set of DC power supply units. Each power generator of the plurality of power generators is coupled to a set of electrical elements, thereby enabling the each power generator of the plurality of power generators to control the local power delivery.

Abstract translation: 提供了一种用于在衬底处理期间在等离子体处理系统中提供局部电力输送的分布式电力装置。 分布式电源装置包括一组直流（DC）电源单元。 分布式电力布置还包括多个发电机，其被配置为从所述一组直流电源单元接收电力。 多个发电机的每个发电机耦合到一组电气元件，从而使多个发电机中的每个发电机能够控制局部电力输送。

公开(公告)号：US20090078677A1

公开(公告)日：2009-03-26

申请号：US12145378

申请日：2008-06-24

Applicant: Neil Benjamin

Inventor： Neil Benjamin

IPC: C23F1/00 ,  C23F1/08

CPC classification number: H05H1/46 ,  C23C16/45563 ,  C23C16/505 ,  C23C16/509 ,  C23C16/52 ,  H01J37/32366 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/32834

Abstract: An integrated steerability array arrangement for managing plasma uniformity within a plasma processing environment to facilitate processing of a substrate is provided. The arrangement includes an array of electrical elements. The arrangement also includes an array of gas injectors, wherein the array of electrical elements and the array of gas injectors are arranged to create a plurality of plasma regions, each plasma region of the plurality of plasma regions being substantially similar. The arrangement further includes an array of pumps, wherein individual one of the array of pumps being interspersed among the array of electrical elements and the array of gas injectors. The array of pumps is configured to facilitate local removal of gas exhaust to maintain a uniform plasma region within the plasma processing environment.

Abstract translation: 提供了一种用于管理等离子体处理环境中的等离子体均匀性以便于衬底处理的集成可控性阵列布置。 该装置包括一组电气元件。 该布置还包括气体喷射器阵列，其中电气元件阵列和气体喷射器阵列被布置成产生多个等离子体区域，多个等离子体区域中的每个等离子体区域基本相似。 该装置还包括一组泵，其中泵阵列中的单独一个泵散布在电气元件阵列和气体喷射器阵列之间。 泵的阵列被配置为便于局部去除气体排气以在等离子体处理环境内保持均匀的等离子体区域。

公开(公告)号：US20080019418A1

公开(公告)日：2008-01-24

申请号：US11829833

申请日：2007-07-27

Applicant: Keith Gaff ,  Neil Benjamin

Inventor： Keith Gaff ,  Neil Benjamin

IPC: G01K11/00

CPC classification number: G01K11/20 ,  G01K11/3213

Abstract: An apparatus for measuring a temperature of a substrate is disclosed. The apparatus includes a phosphor material in direct contact with the substrate and in thermal contact with the substrate, the phosphor material producing a fluorescent response in a first wavelength range when exposed to a electromagnetic radiation in a second wavelength range, the fluorescent response decaying at a decay rate that is related to a temperature of the phosphor material, and the phosphor material producing a first set of non volatile byproducts when exposed to a plasma.

Abstract translation: 公开了一种用于测量衬底温度的装置。 该设备包括与衬底直接接触并与衬底热接触的磷光体材料，当暴露于第二波长范围内的电磁辐射时，磷光体材料在第一波长范围内产生荧光响应，荧光反应在 与荧光体材料的温度有关的衰减速率，以及暴露于等离子体时产生第一组非挥发性副产物的荧光体材料。

公开(公告)号：US06920312B1

公开(公告)日：2005-07-19

申请号：US10038133

申请日：2002-01-02

Applicant: Neil Benjamin

Inventor： Neil Benjamin

IPC: H01J37/32 ,  H04B1/00 ,  H04B7/00

CPC classification number: H01J37/32174 ,  H01J37/32082

Abstract: An RF generating system operates with high efficiency to supply RF output power to a plasma load. The RF generating system is capable of modulating the RF output power at frequencies up to the frequency of the RF output power while maintaining high efficiency operation. Broadband frequency modulation of the RF output power suppresses instabilities thereby minimizing unstable behavior of the plasma load.

Abstract translation: 射频发生系统以高效率工作，为等离子体负载提供射频输出功率。 RF发生系统能够在保持高效率操作的同时在RF输出功率的频率下调制RF输出功率。 RF输出功率的宽带频率调制抑制不稳定性，从而最小化等离子体负载的不稳定行为。

公开(公告)号：US06821378B1

公开(公告)日：2004-11-23

申请号：US10155061

申请日：2002-05-25

Applicant: John Daugherty ,  Neil Benjamin ,  Song Huang

Inventor： John Daugherty ,  Neil Benjamin ,  Song Huang

IPC: H01L21306

CPC classification number: H01J37/32449 ,  H01J37/3244

Abstract: A cylindrical pump baffle fitted to a semiconductor processing chamber is disclosed. The pump baffle contains a screen with bores therethrough to allow process gasses from the process chamber to be exhausted from the chamber at a reduced rate. This decreases process discrepancies to the wafer due to the prejudice of gas concentration as a result of the pressure differential imposed upon the gas and thereby the wafer brought about by the rapid and relatively unimpeded exit flow of process gasses when no restrictive member is in place. The pump baffle is also machined such that it does not block the placement and removal of wafers by the platform robot arm.

Abstract translation: 公开了一种装配到半导体处理室的圆柱形泵挡板。 泵挡板包含具有穿过其中的孔的筛网，以允许来自处理室的处理气体以降低的速率从室中排出。 由于在没有限制性元件就位时由于施加在气体上的压力差导致气体浓度的偏差，从而晶片由于过程气体的快速且相对不受阻碍的流出而带来，从而减少了晶片的工艺差异。 泵挡板也被加工成使得它不会阻挡平台机器人臂的放置和移除晶片。

公开(公告)号：US06781393B2

公开(公告)日：2004-08-24

申请号：US10680791

申请日：2003-10-06

Applicant: Neil Benjamin

Inventor： Neil Benjamin

IPC: G01R3102

CPC classification number: H01L22/34 ,  H01L2924/0002 ,  H01L2924/3011 ,  H01L2924/00

Abstract: A wafer integrated plasma diagnostic method for a semiconductor wafer processing system provides a multiplicity of plasma probe assemblies arranged on a wafer in a planar array fashion such that one plasma probe assembly is located in the center and eight more plasma probe assemblies are located at intermediate positions such that they lie along the radius from the center to the corners; such corners forming four corners of a square box near the edge of the wafer. Method operations provide at each location and in each of the plasma probe assemblies, six possible probe elements having a relative geometrical area such that the assemblies may make simultaneous measurements of both spatial resolution and real time measurement of different plasma characteristics at the wafer surface, such as: D.C. potential, A.C. potential, shading induced potentials, ion fluxes, ion energy distribution, and the electron part of the I-V Langmuir probe characteristic.

Abstract translation: 用于半导体晶片处理系统的晶片集成等离子体诊断方法提供了以平面阵列方式布置在晶片上的多个等离子体探针组件，使得一个等离子体探针组件位于中心，并且另外8个等离子体探针组件位于中间位置 使得它们沿着半径从中心到角落; 这些拐角在晶片边缘附近形成方形盒的四个角。 方法操作在每个位置和每个等离子体探针组件中提供六个可能的探针元件，其具有相对几何区域，使得组件可以同时测量晶片表面上的不同等离子体特性的空间分辨率和实时测量，例如 作为：DC电位，AC电位，阴影诱导电位，离子通量，离子能量分布以及IV Langmuir探针特征的电子部分。

公开(公告)号：US06483690B1

公开(公告)日：2002-11-19

申请号：US09892634

申请日：2001-06-28

Applicant: Shu Nakajima ,  Neil Benjamin

Inventor： Shu Nakajima ,  Neil Benjamin

IPC: H01T2300

CPC classification number: H01L21/6833

Abstract: A sintered ceramic electrostatic chucking device (ESC) which includes a patterned electrostatic clamping electrode embedded in a ceramic body wherein the clamping electrode includes at least one strip of a sintered electrically conductive material arranged in a fine pattern. Due to the fineness of the electrode pattern employed, stresses induced during manufacture of the ESC are reduced such that the clamping electrode remains substantially planar after the sintering operation. The resulting ESC allows for improved clamping uniformity. Another ESC includes an insulating or semi-conducting body and a clamping electrode having a high resistivity and or a high lateral impedance. The electrostatic chucking device provides improved RF coupling uniformity when RF energy is coupled thorough the clamping electrode from an underlying RF electrode. The RF electrode can be a separate baseplate or it can be a part of the chuck. The ESC's may be used to support semiconductor substrates such as semiconductor wafers in plasma processing equipment.

Abstract translation: 一种烧结陶瓷静电夹持装置（ESC），其包括嵌入在陶瓷体中的图案化静电夹持电极，其中所述夹持电极包括布置成精细图案的至少一个烧结导电材料条。 由于所使用的电极图案的细度，ESC制造期间引起的应力减小，使得夹紧电极在烧结操作之后保持基本平坦。 所得的ESC允许改进的夹紧均匀性。 另一个ESC包括绝缘或半导电体和具有高电阻率或高横向阻抗的夹持电极。 当RF能量通过来自底层RF电极的钳位电极耦合时，静电夹持装置提供改进的RF耦合均匀性。 RF电极可以是单独的基板，也可以是卡盘的一部分。 ESC可用于支持诸如等离子体处理设备中的半导体晶片的半导体衬底。