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    Low cost multi-state magnetic memory
    42.
    发明授权
    Low cost multi-state magnetic memory 有权
    低成本多状态磁存储器

    公开(公告)号：US08456897B2

    公开(公告)日：2013-06-04

    申请号：US13216997

    申请日：2011-08-24

    Applicant: Rajiv Yadav Ranjan ,  Parviz Keshtbod ,  Roger Klas Malmhall

    Inventor： Rajiv Yadav Ranjan ,  Parviz Keshtbod ,  Roger Klas Malmhall

    IPC: G11C11/00

    CPC classification number: H01L43/08 ,  G11C11/161 ,  G11C11/1673 ,  G11C11/5607

    Abstract: A multi-state current-switching magnetic memory element has a magnetic tunneling junction (MTJ), for storing more than one bit of information. The MTJ includes a fixed layer, a barrier layer, and a non-uniform free layer. In one embodiment, having 2 bits per cell, when one of four different levels of current is applied to the memory element, the applied current causes the non-uniform free layer of the MTJ to switch to one of four different magnetic states. The broad switching current distribution of the MTJ is a result of the broad grain size distribution of the non-uniform free layer.

    Abstract translation: 多状态电流切换磁存储元件具有磁隧道结（MTJ），用于存储多于一位的信息。 MTJ包括固定层，阻挡层和不均匀的自由层。 在一个实施例中，当每个单元具有2位时，当四个不同电平的电流之一被施加到存储元件时，所施加的电流使MTJ的非均匀自由层切换到四个不同的磁状态之一。 MTJ的宽开关电流分布是非均匀自由层的宽晶粒尺寸分布的结果。

    Non-volatile magnetic memory with low switching current and high thermal stability
    44.
    发明授权
    Non-volatile magnetic memory with low switching current and high thermal stability 有权
    具有低开关电流和高热稳定性的非易失性磁存储器

    公开(公告)号：US08405174B2

    公开(公告)日：2013-03-26

    申请号：US13453928

    申请日：2012-04-23

    Applicant: Rajiv Yadav Ranjan ,  Parviz Keshtbod

    Inventor： Rajiv Yadav Ranjan ,  Parviz Keshtbod

    IPC: H01L29/82 ,  G11C11/00

    CPC classification number: H01L43/10 ,  B82Y10/00 ,  G11C11/161 ,  G11C11/1675 ,  H01L27/228

    Abstract: A non-volatile current-switching magnetic memory element includes a bottom electrode, a pinning layer formed on top of the bottom electrode, and a fixed layer formed on top of the pinning layer. The memory element further includes a tunnel layer formed on top of the pinning layer, a first free layer formed on top of the tunnel layer, a granular film layer formed on top of the free layer, a second free layer formed on top of the granular film layer, a cap layer formed on top of the second layer and a top electrode formed on top of the cap layer.

    Abstract translation: 非易失性电流切换磁存储元件包括底电极，形成在底电极顶部的钉扎层和形成在钉扎层顶部上的固定层。 存储元件还包括形成在钉扎层顶部的隧道层，形成在隧道层顶部上的第一自由层，形成在自由层顶部上的颗粒膜层，形成在颗粒状的顶部上的第二自由层 膜层，形成在第二层的顶部上的盖层和形成在盖层的顶部上的顶部电极。

    Low-cost non-volatile flash-RAM memory
    45.
    发明授权
    Low-cost non-volatile flash-RAM memory 有权
    低成本的非易失性闪存 - RAM内存

    公开(公告)号：US08391058B2

    公开(公告)日：2013-03-05

    申请号：US13345600

    申请日：2012-01-06

    Applicant: Rajiv Yadav Ranjan ,  Parviz Keshtbod ,  Mahmud Assar

    Inventor： Rajiv Yadav Ranjan ,  Parviz Keshtbod ,  Mahmud Assar

    IPC: G11C11/14

    CPC classification number: G06F12/0246 ,  G11C11/15 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1675 ,  G11C14/00 ,  H01L27/105 ,  H01L27/224

    Abstract: A flash-RAM memory includes non-volatile random access memory (RAM) formed on a monolithic die and non-volatile page-mode memory formed on top of the non-volatile RAM, the non-volatile page-mode memory and the non-volatile RAM reside on the monolithic die. The non-volatile RAM is formed of stacks of magnetic memory cells arranged in three-dimensional form for higher density and lower costs.

    Abstract translation: 闪存RAM存储器包括形成在单片模块上的非易失性随机存取存储器（RAM）和形成在非易失性RAM，非易失性页面模式存储器和非易失性页面模式存储器之上的非易失性页面模式存储器， 易失性RAM驻留在单片模具上。 非易失性RAM由以三维形式布置的磁存储单元堆叠形成，用于更高密度和更低成本。

    MAGNETIC TUNNEL JUNCTION (MTJ) FORMATION USING MULTIPLE ETCHING PROCESSES
    47.
    发明申请
    MAGNETIC TUNNEL JUNCTION (MTJ) FORMATION USING MULTIPLE ETCHING PROCESSES 有权
    使用多个蚀刻过程的磁铁隧道结（MTJ）形成

    公开(公告)号：US20120282711A1

    公开(公告)日：2012-11-08

    申请号：US13371380

    申请日：2012-02-10

    Applicant: Ebrahim Abedifard ,  Parviz Keshtbod

    Inventor： Ebrahim Abedifard ,  Parviz Keshtbod

    IPC: H01L21/02

    CPC classification number: H01L43/12

    Abstract: A method of manufacturing a magnetic memory element includes the steps of forming a permanent magnetic layer on top a bottom electrode, forming a pinning layer on top the permanent magnetic layer, forming a magnetic tunnel junction (MTJ) including a barrier layer on top of the pinning layer, forming a top electrode on top of the MTJ, forming a hard mask on top of the top electrode, and using the hard mask to perform a series of etching processes to reduce the width of the MTJ and the top electrode to substantially a desired width, where one of these etching processes is stopped when a predetermined material in the pinning layer is detected thereby avoiding deposition of metal onto the barrier layer of the etching process thereby preventing shorting.

    Abstract translation: 一种制造磁存储元件的方法包括以下步骤：在底部电极的顶部形成永久磁性层，在永久磁性层的顶部形成钉扎层，形成包含阻挡层的磁性隧道结（MTJ） 钉扎层，在MTJ的顶部形成顶部电极，在顶部电极的顶部上形成硬掩模，并且使用硬掩模执行一系列蚀刻工艺以将MTJ和顶部电极的宽度减小到基本上 当检测到钉扎层中的预定材料时，这些蚀刻工艺中的一个停止，从而避免金属沉积到蚀刻工艺的阻挡层上，从而防止短路。

    Non-Volatile Magnetic Memory with Low Switching Current and High Thermal Stability
    48.
    发明申请
    Non-Volatile Magnetic Memory with Low Switching Current and High Thermal Stability 有权
    具有低开关电流和高热稳定性的非易失性磁存储器

    公开(公告)号：US20120205761A1

    公开(公告)日：2012-08-16

    申请号：US13453928

    申请日：2012-04-23

    Applicant: Rajiv Yadav Ranjan ,  Parviz Keshtbod

    Inventor： Rajiv Yadav Ranjan ,  Parviz Keshtbod

    IPC: H01L29/82

    CPC classification number: H01L43/10 ,  B82Y10/00 ,  G11C11/161 ,  G11C11/1675 ,  H01L27/228

    Abstract: A non-volatile current-switching magnetic memory element includes a bottom electrode, a pinning layer formed on top of the bottom electrode, and a fixed layer formed on top of the pinning layer. The memory element further includes a tunnel layer formed on top of the pinning layer, a first free layer formed on top of the tunnel layer, a granular film layer formed on top of the free layer, a second free layer formed on top of the granular film layer, a cap layer formed on top of the second layer and a top electrode formed on top of the cap layer.

    Abstract translation: 非易失性电流切换磁存储元件包括底电极，形成在底电极顶部的钉扎层和形成在钉扎层顶部上的固定层。 存储元件还包括形成在钉扎层顶部的隧道层，形成在隧道层顶部上的第一自由层，形成在自由层顶部上的颗粒膜层，形成在颗粒状的顶部上的第二自由层 膜层，形成在第二层的顶部上的盖层和形成在盖层的顶部上的顶部电极。

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