公开(公告)号：US07638360B2

公开(公告)日：2009-12-29

申请号：US11960567

申请日：2007-12-19

Applicant: Myung-kwan Ryu ,  Jun-seong Kim ,  Sang-yoon Lee ,  Euk-che Hwang ,  Tae-sang Kim ,  Jang-yeon Kwon ,  Kyung-bae Park ,  Kyung-seok Son ,  Ji-sim Jung

Inventor： Myung-kwan Ryu ,  Jun-seong Kim ,  Sang-yoon Lee ,  Euk-che Hwang ,  Tae-sang Kim ,  Jang-yeon Kwon ,  Kyung-bae Park ,  Kyung-seok Son ,  Ji-sim Jung

IPC: H01L21/00

CPC classification number: H01L29/7869

Abstract: A ZnO-based thin film transistor (TFT) is provided herein, as is a method of manufacturing the TFT. The ZnO-based TFT has a channel layer that comprises ZnO and ZnCl, wherein the ZnCl has a higher bonding energy than ZnO with respect to plasma. The ZnCl is formed through the entire channel layer, and specifically is formed in a region near THE surface of the channel layer. Since the ZnCl is strong enough not to be decomposed when exposed to plasma etching gas, an increase in the carrier concentration can be prevented. The distribution of ZnCl in the channel layer, may result from the inclusion of chlorine (Cl) in the plasma gas during the patterning of the channel layer.

Abstract translation: 这里提供了一种ZnO基薄膜晶体管（TFT），以及TFT的制造方法。 ZnO基TFT具有包含ZnO和ZnCl的沟道层，其中ZnCl相对于等离子体具有比ZnO高的结合能。 ZnCl是通过整个沟道层形成的，具体地形成在沟道层表面附近的区域。 由于ZnCl强度足够暴露于等离子体蚀刻气体时不会分解，因此可以防止载流子浓度的增加。 ZnCl在沟道层中的分布可能是由于在沟道层图案化期间在等离子体气体中包含氯（Cl）。

公开(公告)号：US07560580B2

公开(公告)日：2009-07-14

申请号：US11002460

申请日：2004-12-03

Applicant: Jung Han Shin ,  Jae Jun Lee ,  Chang Ju Kim ,  Sang Yoon Lee

Inventor： Jung Han Shin ,  Jae Jun Lee ,  Chang Ju Kim ,  Sang Yoon Lee

IPC: C07F7/08

CPC classification number: C08G77/58 ,  C08L83/14 ,  H01L51/052 ,  H01L51/0525 ,  C08L2666/02

Abstract: An organic-inorganic metal hybrid material and a composition for producing an organic insulator comprising the hybrid material. The hybrid material shows high solubility in organic solvents and monomers, and superior adhesion to substrates. In addition, the hybrid material has a high dielectric constant and a high degree of crosslinking. Based on these advantages, the hybrid material or the composition can be applied to the fabrication of various electronic devices by a wet process.

Abstract translation: 一种有机 - 无机金属杂化材料和用于制造包含该混合材料的有机绝缘体的组合物。 杂化材料在有机溶剂和单体中表现出高溶解度，并且对基材具有优异的粘附性。 此外，混合材料具有高介电常数和高交联度。 基于这些优点，混合材料或组合物可以通过湿法应用于各种电子器件的制造。

公开(公告)号：US20090121216A9

公开(公告)日：2009-05-14

申请号：US11898977

申请日：2007-09-18

Applicant: Kook Min Han ,  Kyu Yeol In ,  Jong Jin Park ,  Hyun Sik Moon ,  Sang Yoon Lee

Inventor： Kook Min Han ,  Kyu Yeol In ,  Jong Jin Park ,  Hyun Sik Moon ,  Sang Yoon Lee

IPC: H01L51/10

CPC classification number: H01L51/0049 ,  B82Y10/00 ,  H01L51/0036 ,  H01L51/0043 ,  H01L51/0541 ,  H01L51/0545 ,  H01L51/0566 ,  Y10S977/745

Abstract: An organic thin film transistor may comprise an organic semiconductor layer having surface-modified carbon nanotubes and an electrically-conductive polymer. The surfaces of the carbon nanotubes may be modified with curable functional groups, comprising oxirane groups and anhydride groups. A room-temperature solution process may be used to provide a relatively uniform and relatively highly-adhesive organic semiconductor layer in a simple and economical manner. Additionally, the organic thin film transistor having the organic semiconductor layer may have relatively high charge carrier mobility and relatively low threshold voltage.

Abstract translation: 有机薄膜晶体管可以包括具有表面改性的碳纳米管和导电聚合物的有机半导体层。 碳纳米管的表面可以用可固化官能团改性，包括环氧乙烷基团和酸酐基团。 可以使用室温溶液法以简单和经济的方式提供相对均匀且相对高度粘合的有机半导体层。 另外，具有有机半导体层的有机薄膜晶体管可以具有相对高的载流子迁移率和相对低的阈值电压。

公开(公告)号：US20090001294A1

公开(公告)日：2009-01-01

申请号：US11722173

申请日：2006-09-29

Applicant: Tae Hoon Lee ,  Ho Dong Kim ,  Won Il Ko ,  Dae Yong Song ,  Joong Hwan Jeong ,  Sang Yoon Lee

Inventor： Tae Hoon Lee ,  Ho Dong Kim ,  Won Il Ko ,  Dae Yong Song ,  Joong Hwan Jeong ,  Sang Yoon Lee

IPC: G21K1/00

CPC classification number: G01T3/00 ,  G01T7/02

Abstract: A neutron coincidence counter for non-destructive accounting for a nuclear material according to the present invention comprises an outer case, neutron detectors mounted in the outer case while being surrounded by a moderator, and a basket horizontally movable in the outer case so as to be exposed outside the outer case and having a cavity for receiving a sample container therein. Further, a neutron coincidence counter for non-destructive accounting for a nuclear material according to the present invention comprises an outer case, neutron detectors mounted in the outer case while being surrounded by a moderator, a basket movable in the outer case so as to be exposed outside the outer case and having a cavity for receiving a sample container therein, and an external signal analyzer connected to the detectors through an electrically conductive path. Moreover, at least one facile connector of one-touch connection type is mounted on the electrically conductive path for connecting the detectors to the external signal analyzer, resulting in free removal and replacement of wires connected to the connector.

Abstract translation: 根据本发明的用于核材料的非破坏性核算的中子重合计数器包括外壳，安装在外壳中并由主体包围的中子探测器和可在外壳中水平移动的篮状物 暴露在外壳外部并且具有用于在其中接收样品容器的空腔。 此外，根据本发明的用于核材料的非破坏性核算的中子重合计数器包括外壳，安装在外壳中同时被调节器包围的中子探测器，可在外壳中移动的篮状物 暴露在外壳外部并且具有用于在其中接收样品容器的空腔和通过导电路径连接到检测器的外部信号分析器。 此外，至少一个轻触式连接器的简单连接器安装在导电路径上，用于将检测器连接到外部信号分析仪，从而免除了去除和更换连接到连接器的电线。

公开(公告)号：US20080197413A1

公开(公告)日：2008-08-21

申请号：US12032007

申请日：2008-02-15

Applicant: Ji-sim Jung ,  Myung-kwan Ryu ,  Jang-yeon Kwon ,  Kyung-bae Park ,  Min-koo Han ,  Sang-yoon Lee ,  Joong-hyun Park ,  Sang-myeon Han ,  Sun-jae Kim

Inventor： Ji-sim Jung ,  Myung-kwan Ryu ,  Jang-yeon Kwon ,  Kyung-bae Park ,  Min-koo Han ,  Sang-yoon Lee ,  Joong-hyun Park ,  Sang-myeon Han ,  Sun-jae Kim

IPC: H01L29/786 ,  H01L21/336

CPC classification number: H01L29/78621 ,  H01L29/42384 ,  H01L2029/7863

Abstract: Provided are a thin film transistor and a method of manufacturing the same. The thin film transistor includes: a lower structure; a semiconductor layer formed on the lower structure and including a plurality of doping regions; a first insulating layer and a second insulating layer formed on the semiconductor layer and separated from each other; a third insulating layer formed on the first insulating layer and the second insulating layer; and a gate electrode layer formed between regions of the third insulating layer respectively corresponding to the first insulating layer and the second insulating layer.

Abstract translation: 提供一种薄膜晶体管及其制造方法。 薄膜晶体管包括：下部结构; 半导体层，形成在所述下部结构上并且包括多个掺杂区域; 形成在所述半导体层上并分离的第一绝缘层和第二绝缘层; 形成在所述第一绝缘层和所述第二绝缘层上的第三绝缘层; 以及在第三绝缘层的分别对应于第一绝缘层和第二绝缘层的区域之间形成的栅极电极层。

公开(公告)号：USD572015S1

公开(公告)日：2008-07-01

申请号：US29282030

申请日：2007-07-10

Applicant: Tae Il Kim ,  Sang Yoon Lee ,  Kang Eui Cho ,  Jung Joo Yoo ,  In Hyeuk Choi ,  Jae Won Jeong ,  Seon Kyu Kim ,  Tae Hyun Sung

Designer： Tae Il Kim ,  Sang Yoon Lee ,  Kang Eui Cho ,  Jung Joo Yoo ,  In Hyeuk Choi ,  Jae Won Jeong ,  Seon Kyu Kim ,  Tae Hyun Sung

公开(公告)号：US20080153991A1

公开(公告)日：2008-06-26

申请号：US11798023

申请日：2007-05-09

Applicant: Jong Jin Park ,  Jung Han Shin ,  Sang Yoon Lee

Inventor： Jong Jin Park ,  Jung Han Shin ,  Sang Yoon Lee

IPC: C08G65/00 ,  C07D303/12 ,  C07D307/06 ,  C07D307/77

CPC classification number: B82Y30/00 ,  B82Y40/00 ,  C01B32/168 ,  C01B32/17 ,  C08K3/041 ,  C08K9/04 ,  C09D7/70 ,  C09D109/06 ,  C09D129/04 ,  G03F7/0382 ,  Y10S977/746 ,  Y10S977/753 ,  Y10S977/842 ,  Y10T428/24893 ,  Y10T428/24994

Abstract: Disclosed herein are methods of making a negative pattern of carbon nanotubes or a polymerized carbon nanotube composite having an interpenetrating polymer network (IPN) by modifying the surfaces of the carbon nanotubes with polymerizable functional groups such as oxirane and anhydride groups and subjecting the surface-modified carbon nanotubes either to a photolithography process or to a heatcuring process. By virtue of the present invention, desired patterns of carbon nanotubes can be easily made on the surfaces of various substrates, and polymerized carbon nanotube composites improved in hardening properties can be made without additional polymers.

Abstract translation: 本文公开了通过用诸如环氧乙烷和酸酐基团的可聚合官能团改性碳纳米管的表面来制备碳纳米管的负型图案或具有互穿聚合物网络（IPN）的聚合碳纳米管复合材料的方法，并对表面改性 碳纳米管到光刻工艺或热固化工艺。 根据本发明，可以容易地在各种基板的表面上形成期望的碳纳米管图案，并且可以在没有附加的聚合物的情况下进行提高硬化性能的聚合碳纳米管复合材料。

公开(公告)号：US07374701B2

公开(公告)日：2008-05-20

申请号：US10874284

申请日：2004-06-24

Applicant: Euk Che Hwang ,  Sang Yoon Lee ,  Young Hun Byun ,  Joon Sung Ryu ,  Hae Jung Son

Inventor： Euk Che Hwang ,  Sang Yoon Lee ,  Young Hun Byun ,  Joon Sung Ryu ,  Hae Jung Son

IPC: H01B1/00 ,  H01B1/12

CPC classification number: C23C18/06 ,  C23C18/08 ,  C23C18/1216 ,  C23C18/14 ,  Y10T428/31678

Abstract: A composition of (i) an organometallic precursor containing a hydrazine compound coordinating with a central metal thereof and (ii) an organometallic compound of a main group metal and a method of forming metal film or pattern using this composition.

Abstract translation: （i）含有与中心金属配位的肼化合物的有机金属前体和（ii）主族金属的有机金属化合物的组合物和使用该组合物形成金属膜或图案的方法。

公开(公告)号：US20080111129A1

公开(公告)日：2008-05-15

申请号：US11808463

申请日：2007-06-11

Applicant: Eun Jeong Jeong ,  Joo Young Kim ,  Kyung Seok Son ,  Eun Kyung Lee ,  Sang Yoon Lee

Inventor： Eun Jeong Jeong ,  Joo Young Kim ,  Kyung Seok Son ,  Eun Kyung Lee ,  Sang Yoon Lee

IPC: H01L51/30 ,  B05D3/06 ,  B05D5/12 ,  H01L51/40 ,  C08F30/08

CPC classification number: H01L51/052 ,  C08F283/12 ,  C08F290/068 ,  C08G77/12 ,  C08G77/24 ,  C08K5/10 ,  C08L83/04 ,  C08L83/06 ,  H01L51/0036 ,  H01L51/0545

Abstract: Disclosed is a composition for preparing an organic insulator, including an organic silane material, having a vinyl group, an acetylene group or an acryl group as a functional group for participating in a crosslinking reaction, a crosslinking agent, and a solvent for dissolving the above components. The organic insulator of example embodiments may be provided in the form of a solid insulating film, which may increase charge mobility while decreasing the threshold voltage and operating voltage of OTFTs, and which also may generate relatively slight hysteresis.

Abstract translation: 公开了一种制备有机绝缘体的组合物，包括具有乙烯基，乙炔基或丙烯酰基作为参与交联反应的官能团的有机硅烷材料，交联剂和用于溶解上述的溶剂 组件。 示例性实施例的有机绝缘体可以以固体绝缘膜的形式提供，其可以在降低OTFT的阈值电压和操作电压的同时增加电荷迁移率，并且还可以产生相对较小的滞后。

公开(公告)号：US07364940B2

公开(公告)日：2008-04-29

申请号：US11296704

申请日：2005-12-08

Applicant: Joo Young Kim ,  Eun Kyung Lee ,  Bang Lin Lee ,  Bon Won Koo ,  Hyun Jung Park ,  Sang Yoon Lee

Inventor： Joo Young Kim ,  Eun Kyung Lee ,  Bang Lin Lee ,  Bon Won Koo ,  Hyun Jung Park ,  Sang Yoon Lee

IPC: H01L51/40

CPC classification number: H01L21/0212 ,  H01L21/02282 ,  H01L21/3127 ,  H01L21/31691 ,  H01L51/0036 ,  H01L51/052 ,  H01L51/0529 ,  H01L51/0541 ,  H01L51/0545

Abstract: An organic thin film transistor including a fluorine-based polymer thin film and method of fabricating the same. The organic thin film transistor may include a gate electrode, a gate insulating layer, an organic semiconductor layer, source electrode, and a drain electrode formed on a substrate wherein a fluorine-based polymer thin film may be formed (or deposited) at the interface between the gate insulating layer and the organic semiconductor layer. The organic thin film transistor may have higher charge carrier mobility and/or higher on/off current ratio (Ion/Ioff). In addition, a polymer organic semiconductor may be used to form the insulating layer and the organic semiconductor layer by wet processes, so the organic thin film transistor may be fabricated by simplified procedure(s) at reduced costs.

Abstract translation: 包含氟基聚合物薄膜的有机薄膜晶体管及其制造方法。 有机薄膜晶体管可以包括形成在基板上的栅电极，栅极绝缘层，有机半导体层，源电极和漏电极，其中可以在界面处形成（或沉积）氟基聚合物薄膜 在栅绝缘层和有机半导体层之间。 有机薄膜晶体管可具有较高的电荷载流子迁移率和/或较高的导通/截止电流比（I />）。 此外，可以使用聚合物有机半导体通过湿法形成绝缘层和有机半导体层，因此有机薄膜晶体管可以通过简化的程序以降低的成本制造。