公开(公告)号：US06291847B1

公开(公告)日：2001-09-18

申请号：US09159754

申请日：1998-09-24

申请人： Kiyonori Ohyu ,  Makoto Ohkura ,  Aritoshi Sugimoto ,  Yoshitaka Tadaki ,  Makoto Ogasawara ,  Masashi Horiguchi ,  Norio Hasegawa ,  Shinichi Fukada

发明人： Kiyonori Ohyu ,  Makoto Ohkura ,  Aritoshi Sugimoto ,  Yoshitaka Tadaki ,  Makoto Ogasawara ,  Masashi Horiguchi ,  Norio Hasegawa ,  Shinichi Fukada

IPC分类号： H01L27108

CPC分类号： H01L27/10897 ,  H01L27/10814 ,  H01L27/10894

摘要： A field oxide film 3 in a region where relief cells are formed is made wider than the field oxide film 3 in a region where normal memory cells are formed thereby to make a field relaxation layer 8r of the relief cells deeper than the field relaxation layer 8 of the normal cells, and the depletion layer of the sources and drains (n-type semiconductor regions) of the relief cells is widened to weaken the junction field.

摘要翻译： 在形成正常存储单元的区域中，形成有浮雕单元的区域中的场氧化膜3比场氧化膜3宽，使得浮雕单元的场弛豫层8r比场弛豫层8更深 的正电池，并且补充电池的源极和漏极（n型半导体区域）的耗尽层变宽以削弱结场。

公开(公告)号：US08368980B2

公开(公告)日：2013-02-05

申请号：US12420625

申请日：2009-04-08

申请人： Mineko Sato ,  Shinichi Fukada ,  Tsutomu Murayama ,  Kunio Yoshihara ,  Hiroyuki Kimura

发明人： Mineko Sato ,  Shinichi Fukada ,  Tsutomu Murayama ,  Kunio Yoshihara ,  Hiroyuki Kimura

IPC分类号： H04N1/46 ,  H04N1/60 ,  H04N1/40

CPC分类号： H04N1/407 ,  G03G15/01 ,  G03G15/5041 ,  G03G15/5062 ,  H04N1/52

摘要： An image processing apparatus includes a region detection unit configured to detect from an image a region which is sandwiched between a pair of opposite lines and in which image formation is performed at a density lower than a predetermined density, a rendering unit configured to render a border of an inner portion inside the region sandwiched between the pair of opposite lines with a line having a density higher than the predetermined density, and an outputting unit configured to output an image in which the inner portion inside the region sandwiched between the pair of opposite lines is bordered by the border rendered by the rendering unit.

摘要翻译： 一种图像处理装置，包括区域检测单元，被配置为从图像中检测夹在一对相对的线之间并且以低于预定浓度的密度进行图像形成的区域;渲染单元，被配置为呈现边界 在所述一对相对线之间的区域内部的内部具有密度高于所述预定浓度的线，以及输出单元，被配置为输出其中夹在所述一对相对线之间的区域内部的内部的图像 由渲染单元渲染的边界界定。

公开(公告)号：US20120250048A1

公开(公告)日：2012-10-04

申请号：US13524731

申请日：2012-06-15

申请人： Yoichi Takaragi ,  Shinichi Fukada ,  Tsutomu Murayama ,  Kunio Yoshihara

发明人： Yoichi Takaragi ,  Shinichi Fukada ,  Tsutomu Murayama ,  Kunio Yoshihara

IPC分类号： G06K15/02

CPC分类号： G06K15/02

摘要： An image processing apparatus includes a receiving unit configured to externally receive print data including information on an attribute of an image to print, a rasterizing unit configured to generate raster image data based on the print data received by the receiving unit, an attribute data generating unit configured to generate attribute data representing an attribute of an image included in the raster image data generated by the rasterizing unit based on the information on an attribute of an image to print included in the print data, and a vectorizing unit configured to vectorize at least a part of the raster image data. The vectorizing unit identifies the attribute of the image included in the raster image data based on the attribute data generated by the attribute data generating unit, and performs vectorization based on the identified attribute of the image.

摘要翻译： 一种图像处理装置，包括：接收单元，被配置为从外部接收包括关于要打印的图像的属性的信息的打印数据;光栅化单元，被配置为基于由所述接收单元接收的打印数据生成光栅图像数据;属性数据生成单元 被配置为基于关于打印数据中包含的要打印的图像的属性的信息，生成表示由光栅化单元生成的光栅图像数据中包含的图像的属性的属性数据，以及矢量化单元， 部分光栅图像数据。 矢量化单元基于由属性数据生成单元生成的属性数据来识别包含在光栅图像数据中的图像的属性，并且基于所识别的图像的属性来执行矢量化。

公开(公告)号：US08045194B2

公开(公告)日：2011-10-25

申请号：US11958786

申请日：2007-12-18

申请人： Yoichi Takaragi ,  Tsutomu Murayama ,  Kunio Yoshihara ,  Shinichi Fukada ,  Hiroyuki Kimura ,  Tatsuo Shinagawa

发明人： Yoichi Takaragi ,  Tsutomu Murayama ,  Kunio Yoshihara ,  Shinichi Fukada ,  Hiroyuki Kimura ,  Tatsuo Shinagawa

IPC分类号： G06K15/00 ,  G06K15/02 ,  G06F3/12 ,  H04N1/00 ,  H04N1/21

CPC分类号： G06F3/1274 ,  G06F3/1208 ,  G06F3/1219 ,  G06F3/1288

摘要： A document management system capable of reliably implementing disposal management of printed matter resulting from print output based on document data. A print history of images based on the document data printed by a printing device is managed. A deletion instruction for at least one set of document data stored in a document storage device is received. The document data targeted for deletion from the document storage device based on the deletion instruction is deleted. Management information of the document data targeted for deletion from the document storage device based on the print history managed by the management unit is deleted.

摘要翻译： 一种文件管理系统，其能够基于文档数据可靠地执行由打印输出产生的印刷品的处置管理。 基于由打印设备打印的文档数据的图像的打印历史被管理。 接收存储在文档存储装置中的至少一组文档数据的删除指令。 基于删除指示从文件存储装置删除的文档数据被删除。 删除基于由管理单元管理的打印历史的从文档存储装置删除的文档数据的管理信息。

公开(公告)号：US08028145B2

公开(公告)日：2011-09-27

申请号：US11869922

申请日：2007-10-10

申请人： Shinichi Fukada

发明人： Shinichi Fukada

IPC分类号： G06F12/00

CPC分类号： G11C11/22 ,  G01D9/005

摘要： A data storage device that performs a process of writing to a memory a plurality of measured data sets received in time series includes: a nonvolatile memory divided in a plurality of blocks to which the measured data is written; and a write control section that performs a processing including successively writing N sets of the measured data to a given block in the nonvolatile memory, and then successively writing next N sets of the measured data to another block, wherein the write control section judges whether or not the N sets of measured data lastly written to the given block of the nonvolatile memory and another N sets of measured data obtained after the N sets of measured data lastly written to the given block contain data with a value outside a predetermined range, writes new measured data to the given block such that the N sets of measured data lastly written to the given block are not overwritten when the data with a value outside the predetermined range is included, and writes new measured data to the given block such that at least one of the N sets of measured data lastly written to the given block is overwritten when the data with a value outside the predetermined range is not included.

摘要翻译： 执行以时间序列方式接收的多个测量数据集向存储器写入处理的数据存储装置包括：被划分成测量数据被写入的多个块的非易失性存储器; 以及写入控制部，其执行包括在非易失性存储器中将给定的块连续地写入N组测量数据的处理，然后将下一个N组测量数据连续写入另一个块，其中写入控制部分判断是否 不是最后写入非易失性存储器的给定块的N组测量数据，并且在最后写入给定块的N组测量数据之后获得的另外N组测量数据包含具有超出预定范围的值的数据，写入新的 测量到给定块的数据，使得当包括超出预定范围的值的数据被包括时，最后写入给定块的N组测量数据不被覆盖，并将新的测量数据写入给定块，使得至少一个 当不包括具有超出预定范围的值的数据时，最后写入给定块的N组测量数据被覆盖。

公开(公告)号：US07764404B2

公开(公告)日：2010-07-27

申请号：US11953512

申请日：2007-12-10

申请人： Shinichi Fukada ,  Yoichi Takaragi ,  Hideaki Kurihara ,  Tatsuo Shinagawa ,  Hiroyuki Kimura ,  Kunio Yoshihara ,  Tsutomu Murayama

发明人： Shinichi Fukada ,  Yoichi Takaragi ,  Hideaki Kurihara ,  Tatsuo Shinagawa ,  Hiroyuki Kimura ,  Kunio Yoshihara ,  Tsutomu Murayama

IPC分类号： G06K15/00

CPC分类号： G06F21/10 ,  G06F2221/0737 ,  G06F2221/2101

摘要： When an image including a specific image is created and stored, it is determined whether or not the height/width ratio of the specific image has been changed by a user in the image that includes the specific image. Whether or not to store the image including the specific image is controlled based on the results of the determination.

摘要翻译： 当创建并存储包括特定图像的图像时，确定包括特定图像的图像中的用户是否已经改变了特定图像的高度/宽度比。 基于确定的结果来控制是否存储包括特定图像的图像。

公开(公告)号：US20100006429A1

公开(公告)日：2010-01-14

申请号：US12500010

申请日：2009-07-09

申请人： Shinichi Fukada ,  Hideo Nakata ,  Takao Tanaka ,  Motohiro Kamijima

发明人： Shinichi Fukada ,  Hideo Nakata ,  Takao Tanaka ,  Motohiro Kamijima

IPC分类号： C23C14/34

CPC分类号： C23C14/3464 ,  C23C14/225 ,  G02F1/1303 ,  G02F1/133734

摘要： A sputtering apparatus includes: a film forming chamber that houses a substrate hold so as to be capable of being carried in a horizontal direction; a sputtered particle ejecting section that includes an upper target and a lower target that are disposed so as to face each other and oblique to the substrate, and an opening, and in which sputtered particles are generated from a pair of the targets by plasma, and the sputtered particles are ejected from the opening to the substrate carried from a side adjacent to the upper target to another side adjacent to the lower target; and a slit member that has a slit through which the sputtered particles are selectively passed, and is disposed between the substrate and the sputtered particle ejecting section. The slit member is disposed so that a slit open end of the slit is positioned within 50 mm from an upstream open end of the opening of the sputtered particle ejecting section, and the slit open end is positioned at an upstream side in a carrying direction of the substrate.

摘要翻译： 溅射装置包括：成膜室，其容纳基板保持件，以便能够沿水平方向承载; 溅射粒子喷射部，其包括彼此面对并且倾斜于基板的上靶和下靶，以及开口，其中通过等离子体从一对靶产生溅射粒子;以及 溅射的颗粒从开口喷射到从与上靶相邻的一侧承载的基板到与下靶相邻的另一侧; 以及狭缝部件，其具有通过所述溅射粒子的狭缝，并且设置在所述基板和所述溅射粒子喷出部之间。 狭缝部件被设置成使得狭缝的狭缝开口端位于距离溅射粒子喷射部的开口的上游开口端50mm以内，并且狭缝开口端位于上游侧的输送方向 底物。

公开(公告)号：US07642099B2

公开(公告)日：2010-01-05

申请号：US11998177

申请日：2007-11-28

申请人： Shinichi Fukada ,  Naoya Sashida

发明人： Shinichi Fukada ,  Naoya Sashida

IPC分类号： H01L21/00

CPC分类号： H01L28/65 ,  H01L27/11502 ,  H01L27/11507 ,  H01L28/57

摘要： A manufacturing method for a ferroelectric memory device includes: forming a ferroelectric capacitor on a substrate, the ferroelectric capacitor including a lower electrode, a ferroelectric film, and an upper electrode; forming a first hydrogen barrier film that covers the ferroelectric capacitor by a chemical vapor deposition method; forming a dielectric film on the first hydrogen barrier film; forming a sidewall composed of the dielectric film on a side of the ferroelectric capacitor by etching back the dielectric film; forming a second hydrogen barrier film on the first hydrogen barrier film and the sidewall by a chemical vapor deposition method; and forming an interlayer dielectric film on the second hydrogen barrier film.

摘要翻译： 铁电存储器件的制造方法包括：在基板上形成铁电电容器，所述强电介质电容器包括下电极，铁电体膜和上电极; 通过化学气相沉积法形成覆盖铁电电容器的第一氢阻挡膜; 在第一氢阻挡膜上形成电介质膜; 通过蚀刻所述电介质膜，在所述强电介质电容器一侧上形成由所述电介质膜构成的侧壁; 通过化学气相沉积法在第一氢阻挡膜和侧壁上形成第二氢阻挡膜; 以及在所述第二氢阻挡膜上形成层间电介质膜。

公开(公告)号：US07553766B2

公开(公告)日：2009-06-30

申请号：US11950152

申请日：2007-12-04

申请人： Shinji Nishihara ,  Shuji Ikeda ,  Naotaka Hashimoto ,  Hiroshi Momiji ,  Hiromi Abe ,  Shinichi Fukada ,  Masayuki Suzuki

发明人： Shinji Nishihara ,  Shuji Ikeda ,  Naotaka Hashimoto ,  Hiroshi Momiji ,  Hiromi Abe ,  Shinichi Fukada ,  Masayuki Suzuki

IPC分类号： H01L21/44

CPC分类号： H01L21/823814 ,  C23C14/16 ,  C23C14/3414 ,  H01L21/28518 ,  H01L21/2855 ,  H01L21/31608 ,  H01L21/76229 ,  H01L21/76828 ,  H01L21/823835 ,  H01L21/823842 ,  H01L21/823871 ,  H01L23/53223 ,  H01L29/456 ,  H01L29/4933 ,  H01L29/665 ,  H01L29/6656 ,  H01L29/6659 ,  H01L29/7833 ,  H01L2924/0002 ,  H01L2924/00

摘要： A Co silicide layer having a low resistance and a small junction leakage current is formed on the surface of the gate electrode, source and drain of MOSFETS by silicidizing a Co film deposited on a main plane of a wafer by sputtering using a high purity Co target having a Co purity of at least 99.99% and Fe and Ni contents of not greater than 10 ppm, preferably having a Co purity of 99.999%.

摘要翻译： 在MOSFET的栅电极，源极和漏极的表面上形成具有低电阻和小的漏电流的Co硅化物层，通过使用高纯度Co靶溅射沉积在晶片的主平面上的Co膜， Co纯度至少为99.99％，Fe和Ni含量不大于10ppm，Co的纯度优选为99.999％。

公开(公告)号：US07514735B2

公开(公告)日：2009-04-07

申请号：US11806615

申请日：2007-06-01

申请人： Shinichi Fukada

发明人： Shinichi Fukada

IPC分类号： H01L27/108

CPC分类号： H01L27/11502 ,  H01L27/11507

摘要： To securely prevent hydrogen from entering a ferroelectric layer of a ferroelectric memory. A first hydrogen barrier layer 5 is formed on the lower side of ferroelectric capacitors 7. Upper surfaces and side surfaces of the ferroelectric capacitors 7 are covered by a second hydrogen barrier layer. All upper electrodes 7c of the plural ferroelectric capacitors 7 to be connected to a common plate line P are connected to one another by an upper wiring layer 91. The upper wiring layer 91 is connected to the plate line P through a lower wiring 32 provided below the ferroelectric capacitors 7. A third hydrogen barrier layer 92 is formed on the upper wiring layer 91 such that all edge sections 92a of the third hydrogen barrier layer 92 come in contact with the first hydrogen barrier layer 5.

摘要翻译： 可靠地防止氢气进入铁电存储器的铁电层。 第一氢阻挡层5形成在铁电电容器7的下侧。铁电电容器7的上表面和侧表面被第二氢阻挡层覆盖。 要连接到公共板线P的多个铁电电容器7的所有上电极7c通过上布线层91彼此连接。上布线层91通过下面布置的下布线32连接到板线P 铁电电容器7.第三氢阻挡层92形成在上布线层91上，使得第三氢阻挡层92的所有边缘部分92a与第一氢阻挡层5接触。