Abstract:
A heat-dissipating module for an automobile battery includes an automobile battery and at least one heat-dissipating device. The heat-dissipating device is adhered to one side of the automobile battery. The heat-dissipating device has a channel located to correspond to the automobile battery and a heat-absorbing surface opposite to the automobile battery. A cooling liquid is in the channel for circulation therein. The cooling liquid circulates in the channel to absorb the heat of the automobile battery to cool the battery, thereby increasing the efficiency and lifetime of the battery greatly.
Abstract:
Disclosed is an apparatus and method for medium access control (MAC) in an optical packet-switched network. The MAC apparatus may comprise a bandwidth allocation module and an MAC processor. The bandwidth allocation module determines a data transmission limit based on a probabilistic quota plus credit mechanism for each node of the network, dynamically informs all downstream nodes of unused quota and allows the downstream nodes use remaining bandwidths of the upstream node. Through a control message carried by a control channel, the MAC processor determines uploading, downloading and data erasing for a plurality of data channels, and updates the corresponding contents in the control message.
Abstract:
A thin film transistor (TFT) structure is provided. The TFT comprises a gate, a first electrode, a second electrode, a dielectric layer, and a channel layer. By overlapping the area between the first electrode and the gate, the TFT structure acquires a parasitic capacitor that is unaffected by manufacture deviations. Therefore, the TFT needs no compensation capacitor, thereby, increasing the aperture ratio of the TFT.
Abstract:
An electrode structure of a transistor, and a pixel structure and a display apparatus comprising the electrode structure of the transistor are disclosed. The electrode structure of the transistor comprises a first electrode and a second electrode. The first electrode has at least two first portions and at least one second portion. The first portions are substantially parallel with each other and each has a first width. The second portion has a second width, and connects the substantially parallel first portions to define a space with an opening. The first width is substantially greater than the second width.
Abstract:
The invention includes a heating assembly, a heating device and an auxiliary cooling module for a battery. The heating assembly is connected to a battery and includes a heat-conducting element and a heating element. The heat-conducting element has at least one heat-absorbing portion and at least one heat-conducting portion. The heat-conducting portion is provided to correspond to the battery. The heating element has at least one first heating portion located to correspond to the heat-absorbing portion for heating the heat-absorbing portion. The other side of the heat-conducting element opposite to the battery is provided with a heat-insulating portion. The auxiliary cooling module is further provided with at least one cooling pipe in the heat-conducting element, thereby cooling the battery. With the heating assembly, the heating device, and the auxiliary cooling module of the present invention, the battery can be kept in a normal range of working temperature, so that the efficiency and lifetime of the battery can be increased greatly.
Abstract:
A pre-molded cavity 3D packaging module with layout is disclosed. The 3D packaging module includes a pre-molded cavity. A wall and a vertical plane of the pre-molded cavity form an inclined angle of more than 3°. An intersecting region between a bottom and a sidewall of the 3D packaging module has a curved profile to facilitate smooth circuit layout.
Abstract:
A method for manufacturing a MOS transistor is provided. A substrate has a high-k dielectric layer and a barrier in each of a first opening and a second opening formed by removing a dummy gate and located in a first transistor region and a second transistor region. A dielectric barrier layer is formed on the substrate and filled into the first opening and the second opening to cover the barrier layers. A portion of the dielectric barrier in the first transistor region is removed. A first work function metal layer is formed. The first work function metal layer and a portion of the dielectric barrier layer in the second transistor region are removed. A second work function metal layer is formed. The method can avoid a loss of the high-k dielectric layer to maintain the reliability of a gate structure, thereby improving the performance of the MOS transistor.
Abstract:
An adjusting device includes a rotating mechanism disposed between a base and a supporter for adjusting an angle between the supporter and the base, a slide mechanism disposed on the base, and a turntable mechanism slidably disposed on the slide mechanism for holding a panel module, so that the panel module can slide relative to the base along the slide mechanism and for coaxially rotating the panel module relative to the base. A contacting component of the turntable mechanism is for pushing a constraining component of the slide mechanism to pivot relative to an axle, so as to separate the constraining component from a protruding portion of the rotating mechanism for releasing constraint on the supporter relative to the base.
Abstract:
A method for manufacturing a MOS transistor is provided. A substrate has a high-k dielectric layer and a barrier in each of a first opening and a second opening formed by removing a dummy gate and located in a first transistor region and a second transistor region. A dielectric barrier layer is formed on the substrate and filled into the first opening and the second opening to cover the barrier layers. A portion of the dielectric barrier in the first transistor region is removed. A first work function metal layer is formed. The first work function metal layer and a portion of the dielectric barrier layer in the second transistor region are removed. A second work function metal layer is formed. The method can avoid a loss of the high-k dielectric layer to maintain the reliability of a gate structure, thereby improving the performance of the MOS transistor.
Abstract:
The present invention discloses a liquid crystal lens and a manufacturing method thereof. At least one first electrode is disposed on a first substrate, a first alignment layer is disposed on the first electrode, a liquid crystal layer is disposed on the first alignment layer, a second alignment layer is disposed on the liquid crystal layer, an electric field uniformization layer is disposed on the second alignment layer, at least one second electrode and at least one third electrode are disposed on the electric field uniformization layer, and the second electrode is arranged around the third electrode. A second substrate is disposed on the second electrode and the third electrode. The third electrode which matches up with the second electrode produces an electric field gradient and the liquid crystal layer is affected uniformly by the electric field uniformization layer so as to achieve rapid focus purpose by the liquid crystal.