Abstract:
A leak detection system having power and communication lines includes a leak sensing cable having sensor lines for sensing a leak, detection controllers connected to the sensor lines to detect a leak position signal, and a master controller receiving the detected leak position signal from the detection controllers, wherein the leak sensing cable includes power and communication lines that are wired to supply power to the detection controllers via the master controller and to transmit the leak position signal to the master controller from the detection controllers. According to this invention, the leak detection system has power and communication lines that are able to transmit the leak position signal between the detection controllers and the master controller while supplying power to the detection controllers and the master controller.
Abstract:
A charging system for a hybrid vehicle which prevents a super capacitor from being reverse charged. In the illustrative charging system a DC-DC converter is connected to the inverter and configured to receive the DC electricity from the inverter and drop voltage. A battery is configured to receive the DC electricity from the DC-DC converter and to be charged by the DC electricity. Finally, a means for preventing reverse charging is mounted on a path between the super capacitor and the battery and is configured to prevent energy from flowing from the battery to the super capacitor.
Abstract:
Provided is an apparatus for allocating a sequence to a synchronization channel for a node identification (ID), the apparatus including: a base node sequence generator to generate a base sequence that is a sequence for a node ID of a base node; a relay node sequence generator to generate a relay sequence that is a sequence for a node ID of a relay node by transforming the base sequence; a baseband signal generator to generate a baseband signal by mapping the base sequence or the relay sequence to a frequency domain and a time domain; and a transmitter to transmit the baseband signal.
Abstract:
A semiconductor memory apparatus includes a first pad group located along a first edge of a plurality of banks, a second pad group located along a second edge of the plurality of banks opposite the first pad group, and a pad control section configured to provide first and second bonding signals and to implement control operation in response to a test mode signal and a bonding option signal to selectively employ signals from the first and second pad groups.
Abstract:
Provided is an apparatus for allocating a sequence to a synchronization channel for a node identification (ID), the apparatus including: a base node sequence generator to generate a base sequence that is a sequence for a node ID of a base node; a relay node sequence generator to generate a relay sequence that is a sequence for a node ID of a relay node by transforming the base sequence; a baseband signal generator to generate a baseband signal by mapping the base sequence or the relay sequence to a frequency domain and a time domain; and a transmitter to transmit the baseband signal.
Abstract:
Disclosed is an infusion flow regulator, in which a reference point is set within a manipulating range of a manipulation unit for regulating a flow rate in the infusion flow regulator, so that a manipulating point of the manipulation unit can be tuned with reference to the ratio of a flow rate measured at the reference point in relation to a prescribed injection flow rate, whereby the flow rate can be quickly and accurately tuned to the prescribed flow rate. The disclosure also includes an infusion flow regulating set including the infusion flow regulator, and an infusion flow regulating method using the same.
Abstract:
An apparatus and method for assigning a Physical Cell Identity (PCI) of a Home eNodeB (HeNB) are provided. The apparatus may distribute PCIs into a plurality of PCI groups, and may enable a PCI group to be assigned to a cell so that the assigned PCI group may be different from a PCI group assigned to a neighboring cell, and that an unassigned PCI in the assigned PCI group may be assigned to an HeNB within a single cell.
Abstract:
Provided is a semiconductor substrate and a method for manufacturing the same. The semiconductor substrate includes a substrate, a discontinuously formed hemispheric metal layer on the substrate, and a semiconductor layer on the hemispheric metal layer. A plurality of voids on the interface of the substrate and discontinuous hemisphere are formed to absorb or relax the stain of interface. Accordingly, even if a subsequent layer is relatively thickly formed on the substrate, substrate bow or warpage can be minimized.
Abstract:
A double-sided cutting insert includes: rectangular shaped upper and lower surfaces formed at upper and lower sides of the insert; four side surfaces of each of the upper and lower surfaces; an assembling hole perpendicular to the upper surface; major cutting edges, at corners of one side surface, and rotationally symmetrical with respect to a center of an outer shape of the insert in a plan view where the upper surface is the front and rotationally symmetrical with respect to the center in a front view where the one of the side surfaces is the front; minor cutting edges, formed at one side of each major cutting edge, and rotationally symmetrical with respect to the center in the plan view; and minor side surfaces formed on a surface where the minor cutting edges meet the side surfaces and inclined toward the center with respect to an assembling hole central axis.
Abstract:
Disclosed is a regenerative fluid machine having guide vanes on a flow channel wall. The regenerative fluid machine includes a circular plate-shaped impeller having a plurality of vanes radially formed on an outer circumference thereof at regular intervals, casings in which the impeller is housed, and flow channels, each of which has a suction hole and a discharge hole in opposite ends thereof, and which are circumferentially disposed within the casings so as to face the vanes. The plurality of guide vanes having an inclined angle (θ) with respect to a radial direction protrude from the flow channel wall in a rotational direction of the impeller so that a relative inflow angle (β) of the fluid introduced into the impeller grooves is increased and thus an absolute inflow angle (α) is decreased.