公开(公告)号：US20230326717A1

公开(公告)日：2023-10-12

申请号：US18201358

申请日：2023-05-24

Applicant: Applied Materials, Inc.

Inventor： Leonid DORF ,  Evgeny KAMENETSKIY ,  James ROGERS ,  Olivier LUERE ,  Rajinder DHINDSA ,  Viacheslav PLOTNIKOV

IPC: H01L21/311 ,  H01J37/32

CPC classification number: H01J37/32128 ,  H01J37/32082 ,  H01J37/32146 ,  H01J37/32165 ,  H01J37/32174 ,  H01J37/3299 ,  H01L21/31116 ,  H01L21/6831

Abstract: Embodiments of this disclosure describe a feedback loop that can be used to maintain a nearly constant sheath voltage and thus creating a mono-energetic IEDF at the surface of the substrate. The system described herein consequently enables a precise control over the shape of IEDF and the profile of the features formed in the surface of the substrate.

公开(公告)号：US20220399186A1

公开(公告)日：2022-12-15

申请号：US17352165

申请日：2021-06-18

Applicant: Applied Materials, Inc.

Inventor： Linying CUI ,  James ROGERS ,  Rajinder DHINDSA ,  Kartik RAMASWAMY

IPC: H01J37/32 ,  H01L21/683

Abstract: Embodiments provided herein include an apparatus and methods for the plasma processing of a substrate in a processing chamber. In some embodiments, aspects of the apparatus and methods are directed to reducing defectivity in features formed on the surface of the substrate, improving plasma etch rate, and increasing selectivity of etching material to mask and/or etching material to stop layer. In some embodiments, the apparatus and methods enable processes that can be used to prevent or reduce the effect of trapped charges, disposed within features formed on a substrate, on the etch rate and defect formation. In some embodiments, the plasma processing methods include the synchronization of the delivery of pulsed-voltage (PV) waveforms, and alternately the delivery of a PV waveform and a radio frequency (RF) waveform, so as to allow for the independent control of generation of electrons that are provided, during one or more stages of a PV waveform cycle, to neutralize the trapped charges formed in the features formed on the substrate.

公开(公告)号：US20220319904A1

公开(公告)日：2022-10-06

申请号：US17843652

申请日：2022-06-17

Applicant: Applied Materials, Inc.

Inventor： Michael R. RICE ,  Yogananda SARODE VISHWANATH ,  Sunil SRINIVASAN ,  Rajinder DHINDSA ,  Steven E. BABAYAN ,  Olivier LUERE ,  Denis M. KOOSAU ,  Imad YOUSIF

IPC: H01L21/687 ,  H01J37/32 ,  H01L21/67 ,  H01L21/683

Abstract: Apparatuses including a height-adjustable edge ring, and methods for use thereof are described herein. In one example, a process kit for processing a substrate is provided. The process kit has a support ring comprising an upper surface having an inner edge disposed at a first height and an outward edge disposed at a second height less than the first height, the inner edge having a greater thickness than the outward edge. An edge ring is disposed on the support ring, an inner surface of the edge ring interfaced with the inner edge of the support ring. A cover ring is disposed outward of the edge ring, the edge ring independently moveable relative to the support ring and the cover ring. Push pins are disposed inward of the cover ring, the push pins operable to elevate the edge ring while constraining radial movement of the support ring.

公开(公告)号：US20220037120A1

公开(公告)日：2022-02-03

申请号：US17315259

申请日：2021-05-07

Applicant: Applied Materials, Inc.

Inventor： Leonid DORF ,  Rajinder DHINDSA ,  James ROGERS ,  Daniel Sang BYUN ,  Evgeny KAMENETSKIY ,  Yue GUO ,  Kartik RAMASWAMY ,  Valentin N. TODOROW ,  Olivier LUERE ,  Jonathan KOLBECK ,  Linying CUI

IPC: H01J37/32 ,  H01L21/311

Abstract: Embodiments of the disclosure provided herein include an apparatus and method for the plasma processing of a substrate in a processing chamber. More specifically, embodiments of this disclosure describe a biasing scheme that is configured to provide a radio frequency (RF) generated RF waveform from an RF generator to one or more electrodes within a processing chamber and a pulsed-voltage (PV) waveform delivered from one or more pulsed-voltage (PV) generators to the one or more electrodes within the processing chamber. The plasma process(es) disclosed herein can be used to control the shape of an ion energy distribution function (IEDF) and the interaction of the plasma with a surface of a substrate during plasma processing.

公开(公告)号：US20210391146A1

公开(公告)日：2021-12-16

申请号：US16899326

申请日：2020-06-11

Applicant: APPLIED MATERIALS, INC.

Inventor： Timothy Joseph FRANKLIN ,  Rajinder DHINDSA ,  Daniel Sang BYUN ,  Carlaton WONG ,  Joseph PERRY ,  James Hugh ROGERS

IPC: H01J37/32 ,  H01L21/67

Abstract: Methods and apparatus for processing a substrate are provided herein. In some embodiments, a method of processing a substrate in an etch process chamber includes: pulsing RF power from an RF bias power supply to a lower electrode disposed in a substrate support of the etch process chamber at a first frequency of about 200 kHz to about 700 kHz over a first period to create a plasma in a process volume of the etch process chamber, wherein a conductance liner surrounds the process volume to provide a ground path for an upper electrode of the etch process chamber; and pulsing RF power from the RF bias power supply to the lower electrode at a second frequency of about 2 MHz to about 13.56 MHz over the first period.

公开(公告)号：US20210296098A1

公开(公告)日：2021-09-23

申请号：US16853600

申请日：2020-04-20

Applicant: APPLIED MATERIALS, INC.

Inventor： Jaeyong CHO ,  Rajinder DHINDSA ,  James ROGERS ,  Anwar HUSAIN

IPC: H01J37/32 ,  H01L21/683 ,  H01L21/67

Abstract: Embodiments of substrate supports are provided herein. In some embodiments, a substrate support for use in a substrate processing chamber includes a ceramic plate having a first side configured to support a substrate and a second side opposite the first side, wherein the ceramic plate includes an electrode embedded in the ceramic plate; a ceramic ring disposed about the ceramic plate and having a first side and a second side opposite the first side, wherein the ceramic ring includes a chucking electrode and a heating element embedded in the ceramic ring; and a cooling plate coupled to the second side of the ceramic plate and the second side of the ceramic ring, wherein the cooling plate includes a radially inner portion, a radially outer portion, and a thermal break disposed therebetween.

公开(公告)号：US20200373149A1

公开(公告)日：2020-11-26

申请号：US16831217

申请日：2020-03-26

Applicant: Applied Materials, Inc.

Inventor： Sang Wook PARK ,  Xiaorui CUI ,  Sunil SRINIVASAN ,  Rajinder DHINDSA ,  Zhonghua YAO ,  Lin YU ,  Olivier LUERE ,  Jonathan Sungehul KIM

IPC: H01L21/02 ,  H01L21/311

Abstract: Embodiments of the present disclosure provide methods and apparatus for forming a desired material layer on a substrate between, during, prior to or after a patterning process. In one embodiment, a method for forming a material layer on the substrate includes pulsing a first gas precursor comprising an organic silicon compound onto a surface of the substrate. The method also includes disposing a first element from the first gas precursor onto the surface of the substrate. The method further includes maintaining a substrate temperature less than about 110 degrees Celsius while disposing the first element. A second gas precursor is pulsed onto the surface of the substrate. Additionally, the method includes disposing a second element from the second gas precursor to the first element on the surface of the substrate.

公开(公告)号：US20200251313A1

公开(公告)日：2020-08-06

申请号：US16265186

申请日：2019-02-01

Applicant: Applied Materials, Inc.

Inventor： James ROGERS ,  Linying CUI ,  Rajinder DHINDSA

IPC: H01J37/32 ,  H01L21/67 ,  H01L21/683 ,  H01L21/687 ,  H01L21/3065

Abstract: Embodiments described herein provide methods and apparatus used to control a processing result profile proximate to a circumferential edge of a substrate during the plasma assisted processing thereof. In one embodiment a substrate support assembly features a first base plate and a second base plate circumscribing the first base plate. The first and second base plates each have one or more respective first and second cooling disposed therein. The substrate support assembly further features a substrate support disposed on and thermally coupled to the first base plate and a biasing ring disposed on and thermally coupled to the second base plate. Here, the substrate support and the biasing ring are each formed of a dielectric material. The substrate support assembly further includes an edge ring biasing electrode embedded the dielectric material of the biasing ring and an edge ring disposed on the biasing ring.

公开(公告)号：US20200234921A1

公开(公告)日：2020-07-23

申请号：US16748847

申请日：2020-01-22

Applicant: Applied Materials, Inc.

Inventor： Leonid DORF ,  Evgeny KAMENETSKIY ,  James ROGERS ,  Olivier LUERE ,  Rajinder DHINDSA ,  Viacheslav PLOTNIKOV

IPC: H01J37/32 ,  H01L21/311

Abstract: Embodiments of this disclosure describe a feedback loop that can be used to maintain a nearly constant sheath voltage and thus creating a mono-energetic IEDF at the surface of the substrate. The system described herein consequently enables a precise control over the shape of IEDF and the profile of the features formed in the surface of the substrate.

公开(公告)号：US20200154556A1

公开(公告)日：2020-05-14

申请号：US16738697

申请日：2020-01-09

Applicant: Applied Materials, Inc.

Inventor： Leonid DORF ,  Olivier LUERE ,  Rajinder DHINDSA ,  James ROGERS ,  Sunil SRINIVASAN ,  Anurag Kumar MISHRA

IPC: H05H1/46 ,  C23C14/54 ,  C23C14/34 ,  H01J37/34 ,  H01J37/08 ,  H01J37/32

Abstract: Embodiments of this disclosure describe an electrode biasing scheme that enables maintaining a nearly constant sheath voltage and thus creating a mono-energetic IEDF at the surface of the substrate that consequently enables a precise control over the shape of IEDF and the profile of the features formed in the surface of the substrate.