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    ABATEMENT AND STRIP PROCESS CHAMBER IN A DUAL LOADLOCK CONFIGURATION
    1.
    发明申请
    ABATEMENT AND STRIP PROCESS CHAMBER IN A DUAL LOADLOCK CONFIGURATION 审中-公开

    公开(公告)号：US20200027742A1

    公开(公告)日：2020-01-23

    申请号：US16584732

    申请日：2019-09-26

    申请人： Applied Materials, Inc.

    发明人： Jared Ahmad LEE ,  Martin Jeffrey SALINAS ,  Paul B. REUTER ,  Imad YOUSIF ,  Aniruddha PAL

    IPC分类号： H01L21/3065 ,  H01L21/3213 ,  H01L21/02 ,  H01J37/32 ,  H01L21/67

    摘要： Embodiments of the present invention provide a dual load lock chamber capable of processing a substrate. In one embodiment, the dual load lock chamber includes a chamber body defining a first chamber volume and a second chamber volume isolated from one another. Each of the lower and second chamber volumes is selectively connectable to two processing environments through two openings configured for substrate transferring. The dual load lock chamber also includes a heated substrate support assembly disposed in the second chamber volume. The heated substrate support assembly is configured to support and heat a substrate thereon. The dual load lock chamber also includes a remote plasma source connected to the second chamber volume for supplying a plasma to the second chamber volume.

    WAFER EDGE RING LIFTING SOLUTION
    3.
    发明申请
    WAFER EDGE RING LIFTING SOLUTION 有权

    公开(公告)号：US20220319904A1

    公开(公告)日：2022-10-06

    申请号：US17843652

    申请日：2022-06-17

    申请人： Applied Materials, Inc.

    发明人： Michael R. RICE ,  Yogananda SARODE VISHWANATH ,  Sunil SRINIVASAN ,  Rajinder DHINDSA ,  Steven E. BABAYAN ,  Olivier LUERE ,  Denis M. KOOSAU ,  Imad YOUSIF

    IPC分类号： H01L21/687 ,  H01J37/32 ,  H01L21/67 ,  H01L21/683

    摘要： Apparatuses including a height-adjustable edge ring, and methods for use thereof are described herein. In one example, a process kit for processing a substrate is provided. The process kit has a support ring comprising an upper surface having an inner edge disposed at a first height and an outward edge disposed at a second height less than the first height, the inner edge having a greater thickness than the outward edge. An edge ring is disposed on the support ring, an inner surface of the edge ring interfaced with the inner edge of the support ring. A cover ring is disposed outward of the edge ring, the edge ring independently moveable relative to the support ring and the cover ring. Push pins are disposed inward of the cover ring, the push pins operable to elevate the edge ring while constraining radial movement of the support ring.

    CHAMBER LID Temperature COOLING SYSTEM
    5.
    发明公开
    CHAMBER LID Temperature COOLING SYSTEM 审中-公开

    公开(公告)号：US20240363313A1

    公开(公告)日：2024-10-31

    申请号：US18141231

    申请日：2023-04-28

    申请人： Applied Materials, Inc.

    发明人： Santosh S. NESARKAR ,  Srikantha MALLAPPA ,  Imad YOUSIF ,  John Anthony O'MALLEY, III

    IPC分类号： H01J37/32 ,  C23C16/44 ,  C23C16/52

    CPC分类号： H01J37/32522 ,  C23C16/4411 ,  C23C16/52 ,  H01J2237/002

    摘要： An apparatus for controlling the temperature in a processing chamber for semiconductor processing is disclosed herein. In one embodiment, a baffle assembly is configured to direct air flow from a center of a lid of the processing chamber to an outer edge of the lid. The baffle assembly has a baffle center having a side surface and a bottom surface, wherein the bottom surface is ring shaped with a central opening. The baffle assembly has a middle baffle extending outward from the side surface of the baffle center. The baffle assembly has a conical baffle extending inward from the side surface of the baffle center, and a top baffle extending upward from the side surface of the baffle center.

    THERMAL MANAGEMENT OF EDGE RING IN SEMICONDUCTOR PROCESSING
    8.
    发明申请
    THERMAL MANAGEMENT OF EDGE RING IN SEMICONDUCTOR PROCESSING 有权
    半导体加工边缘管的热管理

    公开(公告)号：US20130105088A1

    公开(公告)日：2013-05-02

    申请号：US13646069

    申请日：2012-10-05

    申请人： APPLIED MATERIALS, INC.

    发明人： Aniruddha PAL ,  Martin Jeffrey SALINAS ,  Dmitry LUBOMIRSKY ,  Imad YOUSIF ,  Andrew NGUYEN

    IPC分类号： H01L21/306

    CPC分类号： H01L21/67103 ,  C23C16/4585

    摘要： Apparatus for processing semiconductors are provided herein. In some embodiments, an apparatus for processing a substrate may include: a first ring disposed concentrically about a substrate support, the first ring configured to position a substrate atop the substrate support during processing; and a second ring disposed between the substrate support and the first ring, the second ring configured to provide a heat transfer path from the first ring to the substrate support.

    摘要翻译： 本文提供了半导体处理装置。 在一些实施例中，用于处理衬底的装置可以包括：围绕衬底支撑件同心地设置的第一环，所述第一环被配置为在处理期间将衬底定位在衬底支撑件顶部; 以及设置在所述基板支撑件和所述第一环之间的第二环，所述第二环构造成提供从所述第一环到所述基板支撑件的传热路径。

    SUBSTRATE PROCESSING CHAMBER COMPONENT ASSEMBLY WITH PLASMA RESISTANT SEAL
    9.
    发明申请
    SUBSTRATE PROCESSING CHAMBER COMPONENT ASSEMBLY WITH PLASMA RESISTANT SEAL 审中-公开

    公开(公告)号：US20200152425A1

    公开(公告)日：2020-05-14

    申请号：US16189451

    申请日：2018-11-13

    申请人： Applied Materials, Inc.

    发明人： Vahid FIROUZDOR ,  Imad YOUSIF ,  Steven E. BABAYAN ,  Rajinder DHINDSA ,  Changhun LEE ,  Khoi DOAN ,  John Anthony O'MALLEY, III

    IPC分类号： H01J37/32 ,  H01L21/683 ,  H01L21/67 ,  H01L21/687

    摘要： Embodiments disclosed herein relate to a substrate processing chamber component assembly with plasma resistant seal. In one embodiment, the semiconductor processing chamber component assembly includes a first semiconductor processing chamber component, a second semiconductor processing component, and a sealing member. The sealing member has a body formed substantially from polytetrafluoroethylene (PTFE). The sealing member provides a seal between the first and second semiconductor processing chamber components. The body includes a first surface, a second surface, a first sealing surface, and a second sealing surface. The first surface is configured for exposure to a plasma processing region. The second surface is opposite the first surface. The first sealing surface and the second sealing surface extend between the first surface and the second surface. The first sealing surface contacts the first semiconductor processing chamber component. The second sealing surface contacts the second semiconductor processing chamber component.