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Patent Agency Ranking
41.发明授权公开(公告)号：US09417515B2
公开(公告)日：2016-08-16
申请号：US14139507
申请日：2013-12-23
Applicant: Applied Materials, Inc.
Inventor： Soumendra N. Barman , Cara Beasley , Abhijit Basu Mallick , Ralf Hofmann , Nitin K. Ingle
CPC classification number: G03F1/24 , G03F7/164 , G03F7/70316 , G03F7/70958 , G21K1/062 , G21K2201/067
Abstract: An extreme ultraviolet mirror or blank production system includes: a first deposition system for depositing a planarization layer over a semiconductor substrate; a second deposition system for depositing an ultra-smooth layer over the planarization layer, the ultra-smooth layer having reorganized molecules; and a third deposition system for depositing a multi-layer stack over the ultra-smooth layer. The extreme ultraviolet blank includes: a substrate; a planarization layer over the substrate; an ultra-smooth layer over the planarization layer, the ultra-smooth layer having reorganized molecules; a multi-layer stack; and capping layers over the multi-layer stack. An extreme ultraviolet lithography system includes: an extreme ultraviolet light source; a mirror for directing light from the extreme ultraviolet light source; a reticle stage for placing an extreme ultraviolet mask blank with a planarization layer and an ultra-smooth layer over the planarization layer; and a wafer stage for placing a wafer.
Abstract translation: 一种极紫外镜或空白生产系统包括：用于在半导体衬底上沉积平坦化层的第一沉积系统; 用于在所述平坦化层上沉积超光滑层的第二沉积系统，所述超平滑层具有重组的分子; 以及用于在超平滑层上沉积多层堆叠的第三沉积系统。 极紫外线空白包括：基材; 衬底上的平坦化层; 在平坦化层上的超光滑层，超光滑层具有重组的分子; 多层堆叠 并在多层堆叠上覆盖层。 极紫外光刻系统包括：极紫外光源; 用于引导来自极紫外光源的光的镜子; 用于在平坦化层上放置具有平坦化层和超平滑层的极紫外线掩模坯料的掩模版台; 以及用于放置晶片的晶片台。
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42.发明授权Planarized extreme ultraviolet lithography blank, and manufacturing and lithography systems therefor 有权平面化的极紫外光刻印刷机及其制造和光刻系统公开(公告)号：US09354508B2
公开(公告)日：2016-05-31
申请号：US14139307
申请日：2013-12-23
Applicant: Applied Materials, Inc.
Inventor： Cara Beasley , Ralf Hofmann , Majeed Foad , Timothy Michaelson
CPC classification number: G03F1/24 , G03F7/70958
Abstract: An integrated extreme ultraviolet (EUV) blank production system includes: a vacuum chamber for placing a substrate in a vacuum; a first deposition system for depositing a planarization layer having a planarized top surface over the substrate; and a second deposition system for depositing a multi-layer stack on the planarization layer without removing the substrate from the vacuum. The EUV blank is in an EUV lithography system includes: an extreme ultraviolet light source; a mirror for directing light from the EUV source; a reticle stage for placing a EUV mask blank with a planarization layer; and a wafer stage for placing a wafer. The EUV blank includes: a substrate; a planarization layer to compensate for imperfections related to the surface of the substrate, the planarization layer having a flat top surface; and a multi-layer stack on the planarization layer.
Abstract translation: 集成的极紫外（EUV）空白生产系统包括：用于将基板放置在真空中的真空室; 第一沉积系统，用于沉积在衬底上具有平坦化顶表面的平坦化层; 以及用于在平坦化层上沉积多层堆叠而不从真空中移除基板的第二沉积系统。 EUV空白在EUV光刻系统中包括：极紫外光源; 一个用于指示EUV来源的光的镜子; 用于放置具有平坦化层的EUV掩模空白的掩模版台; 以及用于放置晶片的晶片台。 EUV空白包括：底物; 平坦化层，用于补偿与衬底的表面相关的缺陷，平坦化层具有平坦的顶表面; 以及平坦化层上的多层堆叠。
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公开(公告)号：US09343347B2
公开(公告)日：2016-05-17
申请号：US14018959
申请日：2013-09-05
Applicant: APPLIED MATERIALS, INC.
Inventor： Dieter Haas , Majeed A. Foad , Ralf Hofmann
IPC: H01L21/683
CPC classification number: H01L21/6833 , H01L21/6831
Abstract: Embodiments of a portable electrostatic chuck for use in a substrate process chamber to support an ultra-thin substrate when disposed thereon are provided herein. In some embodiments, a portable electrostatic chuck may include a carrier comprising a dielectric material; an electrically conductive layer disposed on a top surface of the carrier; a dielectric layer disposed over the electrically conductive layer, such that the electrically conductive layer is disposed between the carrier and the dielectric layer; and at least one conductor coupled to the electrically conductive layer, wherein the portable electrostatic chuck is configured to electrostatically retain the ultra-thin substrate to the portable electrostatic chuck, wherein the portable electrostatic chuck is further configured to be handled and moved by substrate processing equipment outside of the substrate process chamber, and wherein the portable electrostatic chuck is sized to support large ultra-thin substrates.
Abstract translation: 本文提供了一种用于基板处理室中用于支撑超薄基板的便携式静电卡盘的实施例。 在一些实施例中，便携式静电卡盘可以包括包括电介质材料的载体; 设置在所述载体的顶表面上的导电层; 设置在所述导电层上的电介质层，使得所述导电层设置在所述载体和所述电介质层之间; 以及耦合到所述导电层的至少一个导体，其中所述便携式静电卡盘被配置为将所述超薄基板静电保持到所述便携式静电卡盘，其中所述便携式静电卡盘进一步构造成由基板处理设备 在基板处理室外部，并且其中便携式静电卡盘的尺寸被设计成支撑大的超薄基板。
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44.发明申请EXTREME ULTRAVIOLET CAPPING LAYER AND METHOD OF MANUFACTURING AND LITHOGRAPHY THEREOF 有权极端超紫外线吸收层及其制造方法及其研究方法公开(公告)号：US20160011344A1
公开(公告)日：2016-01-14
申请号：US14696322
申请日：2015-04-24
Applicant: Applied Materials, Inc.
Inventor： Cara Beasley , Ralf Hofmann , Majeed A. Foad , Rudy Beckstrom, III
CPC classification number: G02B5/0891 , C23C14/083 , C23C14/14 , C23C14/568 , C23C14/5853 , C23C14/5873 , C23C28/32 , C23C28/3455 , G02B1/14 , G02B5/0816 , G02B5/085 , G03F1/24 , G03F1/48 , G03F7/20 , G03F7/70316 , G03F7/70916 , G03F7/70958 , G21K1/062
Abstract: A method of manufacture of an extreme ultraviolet reflective element includes: providing a substrate; forming a multilayer stack on the substrate, the multilayer stack includes a plurality of reflective layer pairs having a first reflective layer and a second reflective layer for forming a Bragg reflector; and forming a capping layer on and over the multilayer stack, the capping layer formed from titanium oxide, ruthenium oxide, niobium oxide, ruthenium tungsten, ruthenium molybdenum, or ruthenium niobium, and the capping layer for protecting the multilayer stack by reducing oxidation and mechanical erosion.
Abstract translation: 一种制造极紫外反射元件的方法包括：提供基底; 在所述衬底上形成多层叠层，所述多层叠层包括多个具有第一反射层和用于形成布拉格反射器的第二反射层的反射层对; 在多层堆叠上形成覆盖层，由氧化钛，氧化钌，氧化铌，钌钨，钌钼或钌铌形成的覆盖层，以及通过还原氧化和机械保护多层叠层的覆盖层 侵蚀。
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45.发明申请公开(公告)号：US20140268080A1
公开(公告)日：2014-09-18
申请号：US14139307
申请日：2013-12-23
Applicant: APPLIED MATERIALS, INC.
Inventor： Cara Beasley , Ralf Hofmann , Majeed Foad , Timothy Michaelson
CPC classification number: G03F1/24 , G03F7/70958
Abstract: An integrated extreme ultraviolet (EUV) blank production system includes: a vacuum chamber for placing a substrate in a vacuum; a first deposition system for depositing a planarization layer having a planarized top surface over the substrate; and a second deposition system for depositing a multi-layer stack on the planarization layer without removing the substrate from the vacuum. The EUV blank is in an EUV lithography system includes: an extreme ultraviolet light source; a mirror for directing light from the EUV source; a reticle stage for placing a EUV mask blank with a planarization layer; and a wafer stage for placing a wafer. The EUV blank includes: a substrate; a planarization layer to compensate for imperfections related to the surface of the substrate, the planarization layer having a flat top surface; and a multi-layer stack on the planarization layer.
Abstract translation: 集成的极紫外（EUV）空白生产系统包括：用于将基板放置在真空中的真空室; 第一沉积系统，用于沉积在衬底上具有平坦化顶表面的平坦化层; 以及用于在平坦化层上沉积多层堆叠而不从真空中移除基板的第二沉积系统。 EUV空白在EUV光刻系统中包括：极紫外光源; 一个用于指示EUV来源的光的镜子; 用于放置具有平坦化层的EUV掩模空白的掩模版台; 以及用于放置晶片的晶片台。 EUV空白包括：底物; 平坦化层，用于补偿与衬底的表面相关的缺陷，平坦化层具有平坦的顶表面; 以及平坦化层上的多层堆叠。
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