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    System and method for manufacturing planarized extreme ultraviolet lithography blank
    1.
    发明授权
    System and method for manufacturing planarized extreme ultraviolet lithography blank 有权

    公开(公告)号：US10209613B2

    公开(公告)日：2019-02-19

    申请号：US15167740

    申请日：2016-05-27

    Applicant: Applied Materials, Inc.

    Inventor： Cara Beasley ,  Ralf Hofmann ,  Majeed Foad ,  Timothy Michaelson

    IPC: C23C16/00 ,  G03F1/24 ,  G03F7/20

    Abstract: An integrated extreme ultraviolet (EUV) blank production system includes: a vacuum chamber for placing a substrate in a vacuum; a first deposition system for depositing a planarization layer having a planarized top surface over the substrate; and a second deposition system for depositing a multi-layer stack on the planarization layer without removing the substrate from the vacuum. The EUV blank is in an EUV lithography system includes: an extreme ultraviolet light source; a mirror for directing light from the EUV source; a reticle stage for placing a EUV mask blank with a planarization layer; and a wafer stage for placing a wafer. The EUV blank includes: a substrate; a planarization layer to compensate for imperfections related to the surface of the substrate, the planarization layer having a flat top surface; and a multi-layer stack on the planarization layer.

    SYSTEM AND METHOD FOR MANUFACTURING PLANARIZED EXTREME ULTRAVIOLET LITHOGRAPHY BLANK
    2.
    发明申请
    SYSTEM AND METHOD FOR MANUFACTURING PLANARIZED EXTREME ULTRAVIOLET LITHOGRAPHY BLANK 审中-公开
    用于制造平面超极化层析层析系统和方法

    公开(公告)号：US20160274454A1

    公开(公告)日：2016-09-22

    申请号：US15167740

    申请日：2016-05-27

    Applicant: Applied Materials, Inc.

    Inventor： Cara Beasley ,  Ralf Hofmann ,  Majeed Foad ,  Timothy Michaelson

    IPC: G03F1/24

    CPC classification number: G03F1/24 ,  G03F7/70958

    Abstract: An integrated extreme ultraviolet (EUV) blank production system includes: a vacuum chamber for placing a substrate in a vacuum; a first deposition system for depositing a planarization layer having a planarized top surface over the substrate; and a second deposition system for depositing a multi-layer stack on the planarization layer without removing the substrate from the vacuum. The EUV blank is in an EUV lithography system includes: an extreme ultraviolet light source; a mirror for directing light from the EUV source; a reticle stage for placing a EUV mask blank with a planarization layer; and a wafer stage for placing a wafer. The EUV blank includes: a substrate; a planarization layer to compensate for imperfections related to the surface of the substrate, the planarization layer having a flat top surface; and a multi-layer stack on the planarization layer.

    Abstract translation: 集成的极紫外（EUV）空白生产系统包括：用于将基板放置在真空中的真空室; 第一沉积系统，用于沉积在衬底上具有平坦化顶表面的平坦化层; 以及用于在平坦化层上沉积多层堆叠而不从真空中移除基板的第二沉积系统。 EUV空白在EUV光刻系统中包括：极紫外光源; 一个用于指示EUV来源的光的镜子; 用于放置具有平坦化层的EUV掩模空白的掩模版台; 以及用于放置晶片的晶片台。 EUV空白包括：底物; 平坦化层，用于补偿与衬底的表面相关的缺陷，平坦化层具有平坦的顶表面; 以及平坦化层上的多层堆叠。

    Resist hardening and development processes for semiconductor device manufacturing
    4.
    发明授权
    Resist hardening and development processes for semiconductor device manufacturing 有权
    半导体器件制造的抗硬化和开发工艺

    公开(公告)号：US09411237B2

    公开(公告)日：2016-08-09

    申请号：US14205324

    申请日：2014-03-11

    Applicant: Applied Materials, Inc.

    Inventor： Peng Xie ,  Christopher Dennis Bencher ,  Huixiong Dai ,  Timothy Michaelson ,  Subhash Deshmukh

    IPC: G03F7/40 ,  G03F7/36

    CPC classification number: H01L21/67069 ,  C23C16/45544 ,  G03F7/36 ,  G03F7/405 ,  H01L21/67167 ,  H01L21/67201 ,  H01L21/68707

    Abstract: In some embodiments, a method of forming an etch mask on a substrate is provided that includes (1) forming a resist layer on a substrate; (2) exposing one or more regions of the resist layer to an energy source so as to alter at least one of a physical property and a chemical property of the exposed regions; (3) performing a hardening process on the resist layer to increase the etch resistance of first regions of the resist layer relative to second regions of the resist layer, the hardening process including exposing the resist layer to one or more reactive species within an atomic layer deposition (ALD) chamber; and (4) dry etching the resist layer to remove the one or more second regions and to form a pattern in the resist layer. Other embodiments are provided.

    Abstract translation: 在一些实施例中，提供了在衬底上形成蚀刻掩模的方法，其包括（1）在衬底上形成抗蚀剂层; （2）将抗蚀剂层的一个或多个区域暴露于能量源，以便改变暴露区域的物理性质和化学性质中的至少一个; （3）对抗蚀剂层进行硬化处理以提高抗蚀剂层相对于抗蚀剂层的第二区域的第一区域的耐蚀刻性，硬化过程包括将抗蚀剂层暴露于原子层内的一个或多个反应性物质 沉积（ALD）室; 和（4）干蚀刻抗蚀剂层以除去一个或多个第二区域并在抗蚀剂层中形成图案。 提供其他实施例。

    Methods Of Selective Layer Deposition
    5.
    发明申请
    Methods Of Selective Layer Deposition 有权
    选择层沉积方法

    公开(公告)号：US20150162214A1

    公开(公告)日：2015-06-11

    申请号：US14560525

    申请日：2014-12-04

    Applicant: Applied Materials, Inc.

    Inventor： David Thompson ,  Huixiong Dai ,  Patrick M. Martin ,  Timothy Michaelson ,  Kadthala R. Narendrnath ,  Robert Jan Visser ,  Jingjing Xu ,  Lin Zhang

    IPC: H01L21/3213 ,  H01L21/3205

    CPC classification number: H01L21/32051 ,  C23C16/04 ,  C23C16/18 ,  C23C16/45551 ,  C23C16/45553 ,  H01L21/28562 ,  H01L21/76849

    Abstract: Provided are methods for selective deposition. Certain methods describe providing a first substrate surface; providing a second substrate surface; depositing a first layer of film over the first and second substrate surfaces, wherein the deposition has an incubation delay over the second substrate surface such that the first layer of film over the first substrate surface is thicker than the first layer of film deposited over the second substrate surface; and etching the first layer of film over the first and second substrate surfaces, wherein the first layer of film over the second substrate surface is at least substantially removed, but the first layer of film over the first substrate is only partially removed.

    Abstract translation: 提供了选择性沉积的方法。 某些方法描述了提供第一衬底表面; 提供第二衬底表面; 在所述第一和第二衬底表面上沉积第一层膜，其中所述沉积在所述第二衬底表面上具有孵育延迟，使得所述第一衬底表面上的所述第一层膜比沉积在所述第二衬底表面上的所述第一层膜厚 基材表面; 并且在所述第一和第二衬底表面上蚀刻所述第一层膜，其中所述第二衬底表面上的所述第一层膜至少被基本上去除，但所述第一衬底上的所述第一层膜仅被部分地去除。

    Vapor Deposition Deposited Photoresist, And Manufacturing And Lithography Systems Therefor
    6.
    发明申请
    Vapor Deposition Deposited Photoresist, And Manufacturing And Lithography Systems Therefor 有权
    气相沉积光致抗蚀剂及其制造和光刻系统

    公开(公告)号：US20170068174A1

    公开(公告)日：2017-03-09

    申请号：US15357085

    申请日：2016-11-21

    Applicant: Applied Materials, Inc.

    Inventor： Timothy Michaelson ,  Timothy W. Weidman ,  Barry Lee Chin ,  Majeed Foad ,  Paul Deaton

    IPC: G03F7/20

    CPC classification number: G03F7/70716 ,  G03F7/09 ,  G03F7/167 ,  G03F7/2037

    Abstract: A photoresist vapor deposition system includes: a vacuum chamber having a heating element and cooled chuck for holding a substrate, the vacuum chamber having a heated inlet; and a vapor deposition system connected to the heated inlet for volatilizing a precursor into the vacuum chamber for condensing a photoresist over the substrate cooled by the cooled chuck. The deposition system creates a semiconductor wafer system that includes: a semiconductor wafer; and a vapor deposited photoresist over the semiconductor wafer. An extreme ultraviolet lithography system requiring the semiconductor wafer system includes: an extreme ultraviolet light source; a mirror for directing light from the extreme ultraviolet light source; a reticle stage for imaging the light from the extreme ultraviolet light source; and a wafer stage for placing a semiconductor wafer with a vapor deposited photoresist.

    Abstract translation: 光致抗蚀剂气相沉积系统包括：真空室，其具有用于保持基板的加热元件和冷却卡盘，所述真空室具有加热入口; 以及连接到加热入口的气相沉积系统，用于将前体挥发到真空室中，用于在由冷却的卡盘冷却的基底上冷凝光致抗蚀剂。 沉积系统产生半导体晶片系统，其包括：半导体晶片; 以及半导体晶片上的气相沉积光致抗蚀剂。 需要半导体晶片系统的极紫外光刻系统包括：极紫外光源; 用于引导来自极紫外光源的光的镜子; 用于对来自远紫外光源的光进行成像的掩模版台; 以及用于将具有气相沉积光致抗蚀剂的半导体晶片放置的晶片台。

    Atomic layer deposition of hafnium or zirconium alloy films
    7.
    发明授权
    Atomic layer deposition of hafnium or zirconium alloy films 有权
    原子层沉积铪或锆合金膜

    公开(公告)号：US09236467B2

    公开(公告)日：2016-01-12

    申请号：US14183826

    申请日：2014-02-19

    Applicant: Applied Materials, Inc.

    Inventor： Timothy W. Weidman ,  Timothy Michaelson ,  Paul F. Ma ,  Paul Deaton

    IPC: H01L29/78 ,  C23C16/18 ,  C23C16/455 ,  H01L21/28 ,  H01L29/49 ,  H01L21/285 ,  H01L21/768

    CPC classification number: H01L29/78 ,  C23C16/18 ,  C23C16/45553 ,  H01L21/28088 ,  H01L21/28562 ,  H01L21/76841 ,  H01L21/76871 ,  H01L29/4966

    Abstract: Provided are methods of depositing hafnium or zirconium containing metal alloy films. Certain methods comprise sequentially exposing a substrate surface to alternating flows of an organometallic precursor and a reductant comprising M(BH4)4 to produce a metal alloy film on the substrate surface, wherein M is selected from hafnium and zirconium, and the organometallic precursor contains a metal N. Gate stacks are described comprising a copper barrier layer comprising boron, a first metal M selected from Hf and Zr, and a second metal N selected from tantalum, tungsten, copper, ruthenium, rhodium, cobalt and nickel; and a copper layer overlying the copper barrier seed layer.

    Abstract translation: 提供了沉积含铪或锆的金属合金膜的方法。 某些方法包括将衬底表面依次暴露于有机金属前体和包含M（BH 4）4的还原剂的交替流，以在衬底表面上产生金属合金膜，其中M选自铪和锆，并且有机金属前体含有 描述了包括包含硼的铜阻挡层，选自Hf和Zr的第一金属M和选自钽，钨，铜，钌，铑，钴和镍的第二金属N的栅叠层。 以及覆盖在铜屏障种子层上的铜层。

    VAPOR DEPOSITION DEPOSITED PHOTORESIST, AND MANUFACTURING AND LITHOGRAPHY SYSTEMS THEREFOR
    8.
    发明申请
    VAPOR DEPOSITION DEPOSITED PHOTORESIST, AND MANUFACTURING AND LITHOGRAPHY SYSTEMS THEREFOR 有权
    蒸发沉积物沉积光电子体及其制造和光刻系统

    公开(公告)号：US20140268082A1

    公开(公告)日：2014-09-18

    申请号：US14139457

    申请日：2013-12-23

    Applicant: Applied Materials, Inc.

    Inventor： Timothy Michaelson ,  Timothy W. Weidman ,  Barry Lee Chin ,  Majeed Foad ,  Paul Deaton

    IPC: G03F7/16 ,  G03F7/09

    CPC classification number: G03F7/70716 ,  G03F7/09 ,  G03F7/167 ,  G03F7/2037

    Abstract: A photoresist vapor deposition system includes: a vacuum chamber having a heating element and cooled chuck for holding a substrate, the vacuum chamber having a heated inlet; and a vapor deposition system connected to the heated inlet for volatilizing a precursor into the vacuum chamber for condensing a photoresist over the substrate cooled by the cooled chuck. The deposition system creates a semiconductor wafer system that includes: a semiconductor wafer; and a vapor deposited photoresist over the semiconductor wafer. An extreme ultraviolet lithography system requiring the semiconductor wafer system includes: an extreme ultraviolet light source; a mirror for directing light from the extreme ultraviolet light source; a reticle stage for imaging the light from the extreme ultraviolet light source; and a wafer stage for placing a semiconductor wafer with a vapor deposited photoresist.

    Abstract translation: 光致抗蚀剂气相沉积系统包括：真空室，其具有用于保持基板的加热元件和冷却卡盘，所述真空室具有加热入口; 以及连接到加热入口的气相沉积系统，用于将前体挥发到真空室中，用于在由冷却的卡盘冷却的基底上冷凝光致抗蚀剂。 沉积系统产生半导体晶片系统，其包括：半导体晶片; 以及半导体晶片上的气相沉积光致抗蚀剂。 需要半导体晶片系统的极紫外光刻系统包括：极紫外光源; 用于引导来自极紫外光源的光的镜子; 用于对来自远紫外光源的光进行成像的掩模版台; 以及用于将具有气相沉积光致抗蚀剂的半导体晶片放置的晶片台。

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