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    Photonic activation of reactants for sub-micron feature formation using depleted beams
    41.
    发明授权
    Photonic activation of reactants for sub-micron feature formation using depleted beams 有权

    公开(公告)号：US10061208B2

    公开(公告)日：2018-08-28

    申请号：US15861516

    申请日：2018-01-03

    Applicant: Applied Materials, Inc.

    Inventor： James Francis Mack ,  Stephen Moffatt

    IPC: G03B27/54 ,  G03F7/20

    CPC classification number: G03F7/704 ,  G03F7/70375 ,  G03F7/70383

    Abstract: A fine feature formation method and apparatus provide photon induced deposition, etch and thermal or photon based treatment in an area of less than the diameter or cross section of a STED depleted laser beam. At least two STED depleted beams are directed to a reaction location on a substrate where a beam overlap region having an area smaller than the excitation portion of the beams is formed. A reactant or reactants introduced to the reaction region is excited by the combined energy of the excitation portions of the two beams, but not excited outside of the overlap region of the two excitation portions of the beams. A reactant is caused to occur only in the overlap region. The overlap region may be less that 20 nm wide, and less than 1 nm in width, to enable the formation of substrate features, or the change in the substrate, in a small area.

    Photonic activation of reactants for sub-micron feature formation using depleted beams
    42.
    发明授权
    Photonic activation of reactants for sub-micron feature formation using depleted beams 有权

    公开(公告)号：US09869938B2

    公开(公告)日：2018-01-16

    申请号：US14452200

    申请日：2014-08-05

    Applicant: Applied Materials, Inc.

    Inventor： James Francis Mack ,  Stephen Moffatt

    IPC: G03B27/54 ,  G03F7/20

    CPC classification number: G03F7/704 ,  G03F7/70375 ,  G03F7/70383

    Abstract: A fine feature formation method and apparatus provide photon induced deposition, etch and thermal or photon based treatment in an area of less than the diameter or cross section of a STED depleted laser beam. At least two STED depleted beams are directed to a reaction location on a substrate where a beam overlap region having an area smaller than the excitation portion of the beams is formed. A reactant or reactants introduced to the reaction region is excited by the combined energy of the excitation portions of the two beams, but not excited outside of the overlap region of the two excitation portions of the beams. A reactant is caused to occur only in the overlap region. The overlap region may be less that 20 nm wide, and less than 1 nm in width, to enable the formation of substrate features, or the change in the substrate, in a small area.

    Managing thermal budget in annealing of substrates
    43.
    发明授权
    Managing thermal budget in annealing of substrates 有权
    管理基板退火中的热预算

    公开(公告)号：US09595459B2

    公开(公告)日：2017-03-14

    申请号：US14832564

    申请日：2015-08-21

    Applicant: Applied Materials, Inc.

    Inventor： Stephen Moffatt ,  Abhilash J. Mayur ,  Sundar Ramamurthy ,  Joseph M. Ranish ,  Aaron Muir Hunter

    IPC: H01L21/67 ,  B23K26/06 ,  B23K26/00 ,  B23K26/08 ,  F27B17/00 ,  B23K26/12

    CPC classification number: H01L21/67115 ,  B23K26/0639 ,  B23K26/064 ,  B23K26/08 ,  B23K26/127 ,  F27B17/0025 ,  H01L21/67248

    Abstract: A method and apparatus are provided for treating a substrate. The substrate is positioned on a support in a thermal treatment chamber. Electromagnetic radiation is directed toward the substrate to anneal a portion of the substrate. Other electromagnetic radiation is directed toward the substrate to preheat a portion of the substrate. The preheating reduces thermal stresses at the boundary between the preheat region and the anneal region. Any number of anneal and preheat regions are contemplated, with varying shapes and temperature profiles, as needed for specific embodiments. Any convenient source of electromagnetic radiation may be used, such as lasers, heat lamps, white light lamps, or flash lamps.

    Abstract translation: 提供了一种处理基板的方法和装置。 衬底位于热处理室中的支撑件上。 电磁辐射被引向衬底以退火衬底的一部分。 其他电磁辐射被引向衬底以预热衬底的一部分。 预热减少了预热区域和退火区域之间的边界处的热应力。 根据具体实施方案的需要，预期任何数量的退火和预热区域具有变化的形状和温度曲线。 可以使用任何方便的电磁辐射源，例如激光器，加热灯，白光灯或闪光灯。

    Pulse train annealing method and apparatus
    44.
    发明授权
    Pulse train annealing method and apparatus 有权
    脉冲串退火方法及装置

    公开(公告)号：US09498845B2

    公开(公告)日：2016-11-22

    申请号：US13707476

    申请日：2012-12-06

    Applicant: Applied Materials, Inc.

    Inventor： Stephen Moffatt ,  Joseph M. Ranish

    IPC: H01L21/26 ,  F27B5/14 ,  F27B5/18 ,  F27D21/00 ,  H01L21/268 ,  B23K26/00 ,  B23K26/08 ,  B23K26/12 ,  F27D19/00

    CPC classification number: B23K26/352 ,  B23K26/0006 ,  B23K26/0622 ,  B23K26/0853 ,  B23K26/123 ,  B23K26/126 ,  B23K26/354 ,  B23K2103/56 ,  F27B5/14 ,  F27B5/18 ,  F27D21/00 ,  F27D21/0014 ,  F27D2019/0003 ,  H01L21/2253 ,  H01L21/268 ,  H01L21/324 ,  H01L21/67115

    Abstract: The present invention generally describes apparatuses and methods used to perform an annealing process on desired regions of a substrate. In one embodiment, pulses of electromagnetic energy are delivered to a substrate using a flash lamp or laser apparatus. The pulses may be from about 1 nsec to about 10 msec long, and each pulse has less energy than that required to melt the substrate material. The interval between pulses is generally long enough to allow the energy imparted by each pulse to dissipate completely. Thus, each pulse completes a micro-anneal cycle. The pulses may be delivered to the entire substrate at once, or to portions of the substrate at a time. Further embodiments provide an apparatus for powering a radiation assembly, and apparatuses for detecting the effect of pulses on a substrate.

    Abstract translation: 本发明总体上描述了用于对衬底的期望区域进行退火处理的设备和方法。 在一个实施例中，使用闪光灯或激光装置将电磁能量的脉冲传送到基板。 脉冲可以是约1nsec至约10msec长，并且每个脉冲具有比熔化基底材料所需的能量更少的能量。 脉冲之间的间隔通常足够长以允许由每个脉冲施加的能量完全消散。 因此，每个脉冲完成微退火循环。 脉冲可以一次被输送到整个基板，或者一次被传送到基板的一部分。 另外的实施例提供了用于为辐射组件供电的装置，以及用于检测脉冲在衬底上的影响的装置。

    Crystallization processing for semiconductor applications
    45.
    发明授权
    Crystallization processing for semiconductor applications 有权
    半导体应用的结晶处理

    公开(公告)号：US09455145B2

    公开(公告)日：2016-09-27

    申请号：US15016328

    申请日：2016-02-05

    Applicant: Applied Materials, Inc.

    Inventor： Stephen Moffatt

    IPC: C30B13/24 ,  H01L21/02

    CPC classification number: H01L21/02686 ,  C30B13/24 ,  C30B29/403 ,  H01L21/02532 ,  H01L21/02568 ,  H01L21/2636 ,  H01L21/268 ,  H01L29/685 ,  H01L31/1872 ,  H01L33/0095 ,  Y02E10/50 ,  Y02P70/521

    Abstract: A method and apparatus for forming a crystalline semiconductor layer on a substrate are provided. A semiconductor layer is formed by vapor deposition. A pulsed laser melt/recrystallization process is performed to convert the semiconductor layer to a crystalline layer. Laser, or other electromagnetic radiation, pulses are formed into a pulse train and uniformly distributed over a treatment zone, and successive neighboring treatment zones are exposed to the pulse train to progressively convert the deposited material to crystalline material.

    Abstract translation: 提供了一种在基板上形成晶体半导体层的方法和装置。 通过气相沉积形成半导体层。 进行脉冲激光熔融/再结晶工艺以将半导体层转变成晶体层。 激光或其他电磁辐射脉冲形成脉冲序列并均匀地分布在处理区域上，并且连续的相邻处理区域暴露于脉冲序列以逐渐将沉积的材料转化为结晶材料。

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