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公开(公告)号：US08550801B2
公开(公告)日：2013-10-08
申请号：US13230554
申请日：2011-09-12
IPC分类号： B29C59/02
CPC分类号： B29C59/022 , B29C35/0888 , B29C2035/0827 , B29C2059/023 , B82Y10/00 , B82Y40/00 , G03F7/0002
摘要： In one embodiment, an imprint apparatus includes a template holding part configured to hold a template for imprint. The apparatus further includes a template moving part configured to move the template to press the template onto a light curing resin on a transfer target substrate or to demold the template from the light curing resin. The apparatus further includes a light source configured to irradiate the light curing resin with light to cure the light curing resin. The apparatus further includes a demold control part configured to control a demold speed or a demold angle of the template, based on a position of a shot region from which the template is to be demolded, when demolding the template from the light curing resin.
摘要翻译： 在一个实施例中，压印装置包括被配置为保持用于印记的模板的模板保持部分。 该装置还包括模板移动部件，其构造成移动模板以将模板按压在转印目标基板上的光固化树脂上，或者从光固化树脂脱模模板。 该装置还包括配置成用光照射光固化树脂以固化光固化树脂的光源。 该设备还包括脱模控制部件，当脱模模板从光固化树脂脱模时，该脱模控制部件被配置为基于模板从其脱模的喷射区域的位置来控制模板的脱模速度或脱模角度。
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42.发明授权公开(公告)号：US08227267B2
公开(公告)日：2012-07-24
申请号：US12553906
申请日：2009-09-03
申请人： Ikuo Yoneda , Tetsuro Nakasugi , Masamitsu Itoh , Ryoichi Inanami
发明人： Ikuo Yoneda , Tetsuro Nakasugi , Masamitsu Itoh , Ryoichi Inanami
IPC分类号： H01L21/66
CPC分类号： G01N21/956 , B82Y10/00 , B82Y40/00 , G03F7/0002
摘要： A template inspection method for performing defect inspection of a template, by bringing a pattern formation surface of a template used to form a pattern close to a first fluid coated on a flat substrate, filling the first fluid into a pattern of the template, and by performing optical observation of the template in a state that the first fluid is sandwiched between the template and the substrate, wherein a difference between an optical constant of the first fluid and an optical constant of the template is larger than a difference between an optical constant of air and the optical constant of the template.
摘要翻译： 一种用于对模板进行缺陷检查的模板检查方法，通过将用于形成图案的模板的图案形成表面靠近涂覆在平坦基板上的第一流体，将第一流体填充到模板的图案中，以及通过 在第一流体夹在模板和基板之间的状态下进行模板的光学观察，其中第一流体的光学常数与模板的光学常数之间的差异大于模板的光学常数之间的差异 空气和模板的光学常数。
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公开(公告)号：US20120061882A1
公开(公告)日：2012-03-15
申请号：US13230554
申请日：2011-09-12
IPC分类号： B29C35/08
CPC分类号： B29C59/022 , B29C35/0888 , B29C2035/0827 , B29C2059/023 , B82Y10/00 , B82Y40/00 , G03F7/0002
摘要： In one embodiment, an imprint apparatus includes a template holding part configured to hold a template for imprint. The apparatus further includes a template moving part configured to move the template to press the template onto a light curing resin on a transfer target substrate or to demold the template from the light curing resin. The apparatus further includes a light source configured to irradiate the light curing resin with light to cure the light curing resin. The apparatus further includes a demold control part configured to control a demold speed or a demold angle of the template, based on a position of a shot region from which the template is to be demolded, when demolding the template from the light curing resin.
摘要翻译： 在一个实施例中，压印装置包括被配置为保持用于印记的模板的模板保持部分。 该装置还包括模板移动部件，其构造成移动模板以将模板按压在转印目标基板上的光固化树脂上，或者从光固化树脂脱模模板。 该装置还包括配置成用光照射光固化树脂以固化光固化树脂的光源。 该设备还包括脱模控制部件，当脱模模板从光固化树脂脱模时，该脱模控制部件被配置为基于模板从其脱模的喷射区域的位置来控制模板的脱模速度或脱模角度。
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公开(公告)号：US20100237045A1
公开(公告)日：2010-09-23
申请号：US12727025
申请日：2010-03-18
申请人： Takeshi KOSHIBA , Ikuo Yoneda , Tetsuro Nakasugi
发明人： Takeshi KOSHIBA , Ikuo Yoneda , Tetsuro Nakasugi
CPC分类号： B05D1/322 , B82Y10/00 , B82Y40/00 , G03F7/0002
摘要： A pattern forming method includes determining an amount of curable resin to be formed on a substrate, the curable resin having volatility, the amount of the curable resin being determined by a calculation considering volatile loss of the curable resin, the calculation being performed for each of a plurality of regions of the substrate, forming the curable resin having the determined amount on the substrate, the forming the curable resin being performed for each of the plurality of regions of the substrate, contacting the curable resin formed on the substrate with a template, the template including a pattern to be filled with the curable resin by the contacting, and curing the curable resin under a condition where the curable resin is in contact with the template.
摘要翻译： 图案形成方法包括确定在基材上形成的固化性树脂的量，所述固化性树脂具有挥发性，所述固化性树脂的量是通过考虑了固化性树脂的挥发性损失的计算而计算的， 基板的多个区域，在基板上形成具有确定量的固化树脂，对基板的多个区域中的每一个进行固化树脂的形成，使形成在基板上的可固化树脂与模板接触， 模板包括通过接触填充固化树脂的图案，并且在可固化树脂与模板接触的条件下固化可固化树脂。
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45.发明授权Electron beam exposure method, hot spot detecting apparatus, semiconductor device manufacturing method, and computer program product 失效电子束曝光方法，热点检测装置，半导体器件制造方法和计算机程序产品公开(公告)号：US07648809B2
公开(公告)日：2010-01-19
申请号：US11504666
申请日：2006-08-16
申请人： Tetsuro Nakasugi
发明人： Tetsuro Nakasugi
CPC分类号： G01N23/00 , G01R31/305 , Y10S430/143
摘要： An EB exposure method includes dividing drawing layer pattern to be transferred onto drawing layer by EB exposure and underlying pattern to be transferred onto an underlying layer of the drawing layer by the EB exposure respectively into unit regions, setting representative figure in each of the unit regions of the drawing and underlying layers, the representative figure set in each of the unit regions of the drawing layer corresponding to the drawing layer pattern of each of the unit regions of the drawing layer, the representative figure set in each of the unit regions of the underlying layer corresponding to the underlying layer pattern of each of the unit regions of the underlying layer, and obtaining influence of proximity effect of an arbitrary region of the drawing layer pattern, based on the representative figure that corresponds to the drawing and underlying layer patterns.
摘要翻译： EB曝光方法包括通过EB曝光将下层图案划分到绘图层上并通过EB曝光转移到绘图层的下层上，分别形成单元区域，在每个单位区域中设置代表性图形 的图形和下层的每个单元区域中的每个单元区域中的代表性图形对应于绘图层的每个单位区域的绘制层图案，在每个单元区域中设置的代表性图形 下层对应于下层的每个单位区域的下层图案，并且基于对应于附图和下层图案的代表性图来获得绘图层图案的任意区域的邻近效应的影响。
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公开(公告)号：US20090148782A1
公开(公告)日：2009-06-11
申请号：US12330653
申请日：2008-12-09
CPC分类号： G03F7/70433 , G03F7/70066 , G03F7/70425
摘要： An exposure method includes setting a photo mask into an exposure apparatus. The exposure apparatus includes an opening/closing unit configured to block a part of exposure light from a light source to the wafer. The photo mask having a product area in which a pattern to be used when a central part of a wafer is exposed is formed and peripheral exposure areas in each of which a pattern to be used when a peripheral area is exposed is formed. The peripheral exposure areas are formed to have a plurality of types of pattern densities. Then, a peripheral part of the wafer exposed. When exposing, the opening/closing unit is opened such that one or more of exposed photo mask areas selected from among the peripheral exposure areas has a pattern density corresponding to a shot position of the peripheral part.
摘要翻译： 曝光方法包括将光掩模设置到曝光装置中。 曝光装置包括：打开/关闭单元，被配置为将来自光源的曝光光的一部分阻挡到晶片。 形成具有当晶片的中心部分露出时要使用的图案的产品区域的光掩模，并且形成周边曝光区域，其中当外围区域暴露时使用的图案。 外围曝光区域形成为具有多种图案密度。 然后，晶片的周边部分暴露出来。 当曝光时，打开/关闭单元使得从外围曝光区域中选择的一个或多个曝光的光掩模区域具有与周边部分的拍摄位置对应的图案密度。
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47.发明授权Charged particle beam exposure method of character projection system, charged particle beam exposure device of character projection system, program for use in charged particle beam exposure device, and manufacturing method of semiconductor device 失效字符投影系统的带电粒子束曝光方法，字符投影系统的带电粒子束曝光装置，带电粒子束曝光装置中的使用程序和半导体装置的制造方法公开(公告)号：US07459705B2
公开(公告)日：2008-12-02
申请号：US11583114
申请日：2006-10-19
申请人： Tetsuro Nakasugi , Ryoichi Inanami , Takumi Ota , Takeshi Koshiba
发明人： Tetsuro Nakasugi , Ryoichi Inanami , Takumi Ota , Takeshi Koshiba
CPC分类号： G03F1/20 , B82Y10/00 , B82Y40/00 , H01J37/3174
摘要： A charged particle beam exposure method is disclosed, which includes preparing an aperture mask having character apertures, correcting dimensions of designed patterns in design data in consideration of at least one of factors such as a forward scattering distance of a charged particle, a rearward scattering distance of the charged particle, a blurring of a beam of the charged particle, a dimension conversion difference of the designed patterns due to a denseness/coarseness difference of the designed patterns caused when the underlayer is processed while using the resist as a mask, and the like, allocating at least a part of a specified character aperture of the plurality of character apertures of the aperture mask to the corrected designed patterns to produce writing data, and exposing the resist to the beams of the charged particle passed through the at least a part of the specified character aperture based on the writing data.
摘要翻译： 公开了一种带电粒子束曝光方法，其包括制备具有字符孔的孔径掩模，考虑至少一个因素，校正设计数据中设计图案的尺寸，例如带电粒子的前向散射距离，向后散射距离 带电粒子的模糊，带电粒子束的模糊，由于当使用抗蚀剂作为掩模时在底层被处理时引起的设计图案的致密度/粗糙度差造成的设计图案的尺寸转换差，以及 类似地，将孔径掩模的多个字符孔径的指定字符孔径的至少一部分分配给经校正的设计图案以产生写入数据，并将抗蚀剂暴露于穿过至少一部分的带电粒子的束 基于写入数据的指定字符孔径。
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48.发明授权System, method and a program for correcting conditions for controlling a charged particle beam for lithography and observation, and a program and method for manufacturing a semiconductor device 有权用于校正用于光刻和观察的带电粒子束的控制条件的系统，方法和程序，以及用于制造半导体器件的程序和方法公开(公告)号：US07435978B2
公开(公告)日：2008-10-14
申请号：US11239428
申请日：2005-09-30
申请人： Tetsuro Nakasugi , Takumi Ota
发明人： Tetsuro Nakasugi , Takumi Ota
IPC分类号： H01J37/153
CPC分类号： H01J37/3174 , B82Y10/00 , B82Y40/00 , H01J2237/31793
摘要： A system for correcting a charged particle beam lithography condition including: an error calculation unit configured to calculate an error in an illumination position of a charged particle beam, the charged particle beam is controlled by a lithography condition corrected by initial correction parameters; a temporary correction unit configured to calculate temporary correction parameters to decrease the error to a minimum; and a main correction unit configured to calculate main correction parameters correcting the lithography condition, by executing statistical processing using the temporary correction parameters and the initial correction parameters.
摘要翻译： 一种用于校正带电粒子束光刻条件的系统，包括：误差计算单元，被配置为计算带电粒子束的照明位置的误差，带电粒子束由通过初始校正参数校正的光刻条件控制; 临时校正单元，被配置为计算临时校正参数以将所述误差减小到最小; 以及主校正单元，被配置为通过使用临时校正参数和初始校正参数执行统计处理来计算校正光刻条件的主要校正参数。
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49.发明申请Electron beam drawing apparatus, electron beam drawing method, and a semiconductor device manufacturing method 审中-公开电子束描绘装置，电子束描绘法和半导体器件制造方法公开(公告)号：US20080001097A1
公开(公告)日：2008-01-03
申请号：US11812008
申请日：2007-06-14
申请人： Tetsuro Nakasugi , Takiji Ishimura
发明人： Tetsuro Nakasugi , Takiji Ishimura
CPC分类号： B82Y40/00 , B82Y10/00 , H01J37/3174
摘要： An electron beam drawing apparatus includes an acquisition unit which acquires a position data of an Nth drawing area, an acquisition unit which acquires a stage position and speed, a prediction unit which predicts a stage position when drawing on the Nth area is carried out, a determination unit which determines whether a distance from the stage position to the Nth area position is less than a deflection distance, a decision unit which, when the distance is less than the deflection distance, corrects a deflection distortion in accordance with the determined distance and decides a deflection voltage, a detection unit which detects a drawing end of an (N-1)th drawing area when drawing on the (N-1)th area is ended, and a drawing unit which, when the drawing end is detected, deflects an electron beam in accordance with the deflection voltage to draw a pattern on the Nth area.
摘要翻译： 一种电子束描绘装置，包括获取第N绘制区域的位置数据的获取单元，获取阶段位置和速度的获取单元，预测在第N个区域进行绘制时的阶段位置的预测单元， 确定单元，其确定从舞台位置到第N个区域位置的距离是否小于偏转距离;判定单元，当距离小于偏转距离时，根据确定的距离校正偏转失真，并且确定 偏转电压，在第（N-1）区域上绘制时检测第（N-1）个绘图区域的绘制结束的检测单元结束，以及绘制单元，当检测到绘图结束时， 电子束根据偏转电压在第N个区域绘制图案。
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50.发明授权公开(公告)号：US07264909B2
公开(公告)日：2007-09-04
申请号：US11268526
申请日：2005-11-08
申请人： Tetsuro Nakasugi
发明人： Tetsuro Nakasugi
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/304 , H01J37/3174 , Y10S430/143
摘要： An exposure parameter obtaining method comprising forming a charged reference pattern and a plurality of charged exposure patterns at a surface region of a to-be-exposed insulation substrate by projecting a charged beam with a first incident energy using a reference pattern whose exposure parameter has been known beforehand and all of selected exposure patterns to be corrected, forming electron signal images for the charged reference pattern and the plurality of charged exposure patterns on the basis of charged particles including secondary electrons by scanning the surface of the insulation substrate with a charged beam with a second incident energy lower than the first incident energy, and creating, on the basis of the electron signal images, the exposure parameters including at least one of position, focal point, astigmatism, rotation, and magnification for all of the selected exposure patterns to be corrected.
摘要翻译： 一种曝光参数获取方法，包括使用曝光参数已经被使用的参考图案，通过以第一入射能量投射带电光束，在待曝光绝缘基板的表面区域处形成带电参考图案和多个带电曝光图案 预先知道的所有选择的曝光图案和所有要校正的所选择的曝光图案，基于包含二次电子的带电粒子，通过用带电束扫描绝缘基板的表面，形成用于带电参考图案的电子信号图像和多个带电曝光图案， 第二入射能量低于第一入射能量，并且基于电子信号图像创建曝光参数，其包括用于所有所选曝光图案的位置，焦点，像散，旋转和放大率中的至少一个， 被纠正
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