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211 条记录 (耗时 0.079 秒)

    Use of band edge gate metals as source drain contacts
    42.
    发明授权
    Use of band edge gate metals as source drain contacts 有权
    使用带边栅极金属作为源极漏极触点

    公开(公告)号：US08741753B2

    公开(公告)日：2014-06-03

    申请号：US13611736

    申请日：2012-09-12

    申请人： Kisik Choi ,  Christian Lavoie ,  Paul M. Solomon ,  Bin Yang ,  Zhen Zhang

    发明人： Kisik Choi ,  Christian Lavoie ,  Paul M. Solomon ,  Bin Yang ,  Zhen Zhang

    IPC分类号： H01L21/20 ,  H01L21/3205 ,  H01L21/00

    CPC分类号： H01L29/7833 ,  H01L21/28512 ,  H01L29/4958 ,  H01L29/4966 ,  H01L29/66545

    摘要： A device includes a gate stack formed over a channel in a semiconductor substrate. The gate stack includes a layer of gate insulator material, a layer of gate metal overlying the layer of gate insulator material, and a layer of contact metal overlying the layer band edge gate metal. The device further includes source and drain contacts adjacent to the channel. The source and drain contacts each include a layer of the gate metal that overlies and is in direct electrical contact with a doped region of the semiconductor substrate, and a layer of contact metal that overlies the layer of gate metal.

    摘要翻译： 一种器件包括形成在半导体衬底中的沟道上方的栅叠层。 栅极堆叠包括栅极绝缘体材料层，覆盖栅极绝缘体材料层的栅极金属层和覆盖层带边缘栅极金属的接触金属层。 该装置还包括邻近通道的源极和漏极接触。 源极和漏极触点各自包括覆盖并与半导体衬底的掺杂区域直接电接触的栅极金属层以及覆盖在栅极金属层上的接触金属层。

    MOSFET integrated circuit with uniformly thin silicide layer and methods for its manufacture
    44.
    发明授权
    MOSFET integrated circuit with uniformly thin silicide layer and methods for its manufacture 有权
    具有均匀薄的硅化物层的MOSFET集成电路及其制造方法

    公开(公告)号：US08652963B2

    公开(公告)日：2014-02-18

    申请号：US13237732

    申请日：2011-09-20

    申请人： Bin Yang ,  Christian Lavoie ,  Emre Alptekin ,  Ahmet S. Ozcan ,  Cung D. Tran ,  Mark Raymond

    发明人： Bin Yang ,  Christian Lavoie ,  Emre Alptekin ,  Ahmet S. Ozcan ,  Cung D. Tran ,  Mark Raymond

    IPC分类号： H01L21/44

    CPC分类号： H01L29/665 ,  H01L21/28518 ,  H01L29/6659 ,  H01L29/7833

    摘要： An MOSFET device having a Silicide layer of uniform thickness, and methods for its fabrication, are provided. One such method involves depositing a metal layer over wide and narrow contact trenches on the surface of a silicon semiconductor substrate. Upon formation of a uniformly thin amorphous intermixed alloy layer at the metal/silicon interface, the excess (unreacted) metal is removed. The device is annealed to facilitate the formation of a thin silicide layer on the substrate surface which exhibits uniform thickness at the bottoms of both wide and narrow contact trenches.

    摘要翻译： 提供具有均匀厚度的硅化物层的MOSFET器件及其制造方法。 一种这样的方法包括在硅半导体衬底的表面上的宽且窄的接触沟槽上沉积金属层。 在金属/硅界面处形成均匀薄的无定形混合合金层时，除去过量的（未反应的）金属。 该器件被退火以促进在衬底表面上形成薄的硅化物层，其在宽和窄接触沟槽的底部显示均匀的厚度。

    WATERMARKING IMAGE BLOCK DIVISION METHOD AND DEVICE FOR WESTERN LANGUAGE WATERMARKING PROCESSING
    45.
    发明申请
    WATERMARKING IMAGE BLOCK DIVISION METHOD AND DEVICE FOR WESTERN LANGUAGE WATERMARKING PROCESSING 有权
    WATERMARKING图像块分割方法和西语言水印处理装置

    公开(公告)号：US20140003649A1

    公开(公告)日：2014-01-02

    申请号：US13997258

    申请日：2011-12-23

    申请人： Gaoyang Wang ,  Wenfa Qi ,  Lidong Wang ,  Bin Yang

    发明人： Gaoyang Wang ,  Wenfa Qi ,  Lidong Wang ,  Bin Yang

    IPC分类号： G06T1/00

    CPC分类号： G06T1/0021 ,  G06K9/348 ,  G06K2209/01 ,  G06T2201/0051 ,  G06T2201/0062 ,  G06T2201/0083

    摘要： The application provides a method for partitioning a watermark image with western language characters, comprising: partitioning a western language characters image along rows and columns to form a plurality of character image blocks; identifying valid character image blocks from the formed character image blocks; counting sizes of the valid character image blocks to determine if the image corresponds to a document with a large font size or a document with a small font size; dividing words in the image into a plurality of groups, wherein each divided group in the document with large font size has different numbers of words from that with small font size; and dividing equally the divided word groups into multiple portions corresponding to watermark image blocks. The application further provides a device for partitioning a watermark image with western language characters. The operability of watermark embedding process can be ensured through the above technical solution.

    摘要翻译： 该应用程序提供了一种用于用西方语言字符分割水印图像的方法，包括：沿着行和列划分西方语言字符图像以形成多个字符图像块; 从形成的字符图像块中识别有效的字符图像块; 计算有效字符图像块的大小，以确定图像是否对应于具有较大字体大小的文档或具有小字体大小的文档; 将图像中的单词划分成多个组，其中具有大字体大小的文档中的每个划分组具有与具有小字体尺寸的单词不同的字数; 并将划分的字组分成相当于水印图像块的多个部分。 该应用还提供了一种用于用西语字符分割水印图像的设备。 通过上述技术方案可以确保水印嵌入过程的可操作性。

    ETSOI with reduced extension resistance
    46.
    发明授权
    ETSOI with reduced extension resistance 有权
    ETSOI具有降低的延伸电阻

    公开(公告)号：US08518758B2

    公开(公告)日：2013-08-27

    申请号：US12726889

    申请日：2010-03-18

    申请人： Bin Yang ,  Man Fai Ng

    发明人： Bin Yang ,  Man Fai Ng

    IPC分类号： H01L27/12

    CPC分类号： H01L29/78618 ,  H01L21/76232 ,  H01L21/76283 ,  H01L21/84 ,  H01L27/1203 ,  H01L27/1211 ,  H01L29/66477 ,  H01L29/66545 ,  H01L29/66628 ,  H01L29/66772 ,  H01L29/78 ,  H01L29/78684 ,  H01L29/78696

    摘要： A semiconductor is formed on an SOI substrate, such as an extremely thin SOI (ETSOI) substrate, with increased extension thickness. Embodiments include semiconductor devices having an epitaxially formed silicon-containing layer, such as embedded silicon germanium (eSiGe), on the SOI substrate. An embodiment includes forming an SOI substrate, epitaxially forming a silicon-containing layer on the SOI substrate, and forming a gate electrode on the epitaxially formed silicon-containing layer. After gate spacers and source/drain regions are formed, the gate electrode and underlying silicon-containing layer are removed and replaced with a high-k metal gate. The use of an epitaxially formed silicon-containing layer reduces SOI thickness loss due to fabrication process erosion, thereby increasing extension thickness and lowering extension resistance.

    摘要翻译： 在诸如极薄的SOI（ETSOI）衬底的SOI衬底上形成半导体，具有增加的延伸厚度。 实施例包括在SOI衬底上具有外延形成的含硅层（例如嵌入硅锗（eSiGe））的半导体器件。 实施例包括形成SOI衬底，在SOI衬底上外延形成含硅层，并在外延形成的含硅层上形成栅电极。 在形成栅极间隔物和源极/漏极区之后，去除栅电极和下面的含硅层，并用高k金属栅极代替。 使用外延形成的含硅层由于制造工艺侵蚀而减少SOI厚度损失，从而增加延伸厚度并降低延伸电阻。

    Accelerometer
    48.
    发明授权
    Accelerometer 有权
    加速度计

    公开(公告)号：US08413511B2

    公开(公告)日：2013-04-09

    申请号：US13015987

    申请日：2011-01-28

    申请人： Zhou Ge ,  Bin Yang ,  Zheng-Kui Meng ,  Yi-Lin Yan ,  Rui Zhang

    发明人： Zhou Ge ,  Bin Yang ,  Zheng-Kui Meng ,  Yi-Lin Yan ,  Rui Zhang

    IPC分类号： G01P15/125

    CPC分类号： G01P15/125 ,  G01P15/18 ,  G01P2015/082 ,  G01P2015/0848 ,  G01P2015/0854

    摘要： A accelerometer includes a substrate define a stationary electrode thereon, a first moveable mass defining a conductive-layer thereon facing the stationary electrode, a plurality of first elastic elements coupled with a peripheral side of the first moveable mass, a first fixed element surrounding the first moveable mass and fixedly attached to the substrate, a plurality of first fixed electrodes extending outwardly from the first fixed element, a second moveable mass surrounding the first fixed electrodes, a plurality of first moveable electrodes extending inwardly from the second moveable mass toward the first fixed element and parallel to the first fixed electrodes, respectively, a plurality of second elastic elements coupled with a peripheral side of the second moveable mass, and a second fixed element surrounding the second moveable mass and fixedly attached to the substrate.

    摘要翻译： 加速度计包括在其上限定固定电极的基板，限定其面向固定电极的导电层的第一可移动质量块，与第一可移动质量块的周边连接的多个第一弹性元件，围绕第一 可移动的质量并且固定地附接到基板，从第一固定元件向外延伸的多个第一固定电极，围绕第一固定电极的第二可移动质量;从第二可移动质量向内朝向第一固定 并且与第一固定电极平行的多个第二弹性元件分别与第二可移动质量体的周边连接，第二固定元件围绕第二可移动质量块并且固定地附着在基底上。

    Methods and systems for scanning and processing an image using the error diffusion screening technology
    49.
    发明授权
    Methods and systems for scanning and processing an image using the error diffusion screening technology 有权
    使用误差扩散筛选技术扫描和处理图像的方法和系统

    公开(公告)号：US08411310B2

    公开(公告)日：2013-04-02

    申请号：US12438533

    申请日：2007-08-22

    申请人： Bin Yang ,  Haifeng Li

    发明人： Bin Yang ,  Haifeng Li

    IPC分类号： G06K15/00

    CPC分类号： H04N1/4052

    摘要： Disclosed is a method for scanning and processing an image using the error diffusion screening technology, comprising: (1) scanning each pixel Mi of an nth line in an original image one by one and then storing a scanning result of the pixel Mi to an ith storage location; and (2) processing the stored result of the pixel Mi by using error diffusion and scanning pixels of an n+1th line in the original image until all pixels of the nth line have been processed and all pixels in the n+1th line have been scanned and stored, wherein once processing for the pixel Mi is completed, a scanning result of a pixel of the n+1th line is stored to the ith storage location previously occupied by the pixel Mi. Based on the method, the capacity for storing is only required to be able to store the data of one line in an image in the scanning direction, which saves the storage for bidirectional scanning. The method can optimize the hardware used to implement error diffusion and improve the operating efficiency. Also disclosed is a system for achieving the method.

    摘要翻译： 公开了一种使用误差扩散筛选技术对图像进行扫描和处理的方法，包括：（1）逐个扫描原始图像中的第n行的每个像素Mi，然后将像素Mi的扫描结果存储到第i个 存储位置; 和（2）通过使用原始图像中的第n + 1行的误差扩散和扫描像素来处理像素Mi的存储结果，直到第n行的所有像素都被处理并且第n + 1行中的所有像素已被 扫描并存储，其中一旦针对像素Mi的处理完成，将第n + 1行的像素的扫描结果存储到先前由像素Mi占据的第i个存储位置。 基于该方法，存储容量只需要能够将扫描方向上的一行数据存储在图像中，从而节省用于双向扫描的存储。 该方法可以优化用于实现误差扩散的硬件，提高运行效率。 还公开了一种用于实现该方法的系统。