公开(公告)号：US20120225540A1

公开(公告)日：2012-09-06

申请号：US13407728

申请日：2012-02-28

申请人： Hans-Joachim Schulze ,  Anton Mauder ,  Francisco Javier Santos Rodriguez

发明人： Hans-Joachim Schulze ,  Anton Mauder ,  Francisco Javier Santos Rodriguez

IPC分类号： H01L21/20

CPC分类号： H01L21/02658 ,  H01L21/76202 ,  H01L21/76224 ,  H01L29/8611 ,  Y10T428/218

摘要： A method for fabricating a porous semiconductor body region, comprising:producing at least one trench in a semiconductor body, starting from a surface of the semiconductor body, then producing at least one porous semiconductor body region in the semiconductor body starting from the at least one trench at least along a portion of the side walls of the trench, and then filling the trench with a semiconductor material (15) of the semiconductor body.

摘要翻译： 一种制造多孔半导体体区域的方法，包括：从所述半导体本体的表面开始，在所述半导体本体中形成至少一个沟槽，然后在所述半导体本体中从所述至少一个 沟槽，至少沿着沟槽的侧壁的一部分，然后用半导体本体的半导体材料（15）填充沟槽。

公开(公告)号：US20120018798A1

公开(公告)日：2012-01-26

申请号：US12843326

申请日：2010-07-26

申请人： Anton Mauder ,  Hans-Joachim Schulze

发明人： Anton Mauder ,  Hans-Joachim Schulze

IPC分类号： H01L29/78 ,  H01L21/336 ,  H01L29/06

CPC分类号： H01L29/407 ,  H01L21/283 ,  H01L29/063 ,  H01L29/0878 ,  H01L29/1608 ,  H01L29/2003 ,  H01L29/402 ,  H01L29/408 ,  H01L29/41766 ,  H01L29/4236 ,  H01L29/42368 ,  H01L29/51 ,  H01L29/513 ,  H01L29/7393 ,  H01L29/7394 ,  H01L29/7397 ,  H01L29/7811 ,  H01L29/7813 ,  H01L29/7835 ,  H01L29/792

摘要： A method for protecting a semiconductor device against degradation of its electrical characteristics is provided. The method includes providing a semiconductor device having a first semiconductor region and a charged dielectric layer which form a dielectric-semiconductor interface. The majority charge carriers of the first semiconductor region are of a first charge type. The charged dielectric layer includes fixed charges of the first charge type. The charge carrier density per area of the fixed charges is configured such that the charged dielectric layer is shielded against entrapment of hot majority charge carriers generated in the first semiconductor region. Further, a semiconductor device which is protected against hot charge carriers and a method for forming a semiconductor device are provided.

摘要翻译： 提供了一种用于保护半导体器件免于其电特性劣化的方法。 该方法包括提供具有形成介电半导体界面的第一半导体区域和带电介质层的半导体器件。 第一半导体区域的多数电荷载流子是第一电荷类型。 带电电介质层包括第一充电类型的固定电荷。 固定电荷的每个面积的电荷载流子密度被配置为使得带电电介质层被屏蔽，以阻止在第一半导体区域中产生的热多数电荷载流子。 此外，提供了防止热电荷载流子的半导体器件和形成半导体器件的方法。

公开(公告)号：US20110244646A1

公开(公告)日：2011-10-06

申请号：US13161050

申请日：2011-06-15

申请人： Anton Mauder ,  Hans-Joachim Schulze ,  Carolin Tolksdorf ,  Winfried Kaindl ,  Armin Willmeroth

发明人： Anton Mauder ,  Hans-Joachim Schulze ,  Carolin Tolksdorf ,  Winfried Kaindl ,  Armin Willmeroth

IPC分类号： H01L21/336

CPC分类号： H01L27/0808 ,  H01L21/26513 ,  H01L27/0811 ,  H01L27/088 ,  H01L29/7836

摘要： A semiconductor device with a dynamic gate drain capacitance. One embodiment provides a semiconductor device. The device includes a semiconductor substrate, a field effect transistor structure including a source region, a first body region, a drain region, a gate electrode structure and a gate insulating layer. The gate insulating layer is arranged between the gate electrode structure and the body region. The gate electrode structure and the drain region partially form a capacitor structure including a gate-drain capacitance configured to dynamically change with varying reverse voltages applied between the source and drain regions. The gate-drain capacitance includes at least one local maximum at a given threshold or a plateau-like course at given reverse voltage.

摘要翻译： 具有动态栅极漏极电容的半导体器件。 一个实施例提供一种半导体器件。 该器件包括半导体衬底，场效应晶体管结构，其包括源区，第一体区，漏区，栅电极结构和栅极绝缘层。 栅极绝缘层设置在栅电极结构和体区之间。 栅极电极结构和漏极区域部分地形成电容器结构，其包括栅极 - 漏极电容，该栅极 - 漏极电容被配置为随着施加在源极和漏极区域之间的变化的反向电压而动态地 栅极 - 漏极电容在给定的阈值下包括至少一个局部最大值，或者在给定的反向电压下包括平台状过程。

公开(公告)号：US20110215858A1

公开(公告)日：2011-09-08

申请号：US12718381

申请日：2010-03-05

申请人： Anton Mauder ,  Franz Hirler ,  Frank Pfirsch ,  Hans-Joachim Schulze

发明人： Anton Mauder ,  Franz Hirler ,  Frank Pfirsch ,  Hans-Joachim Schulze

IPC分类号： H03K17/0412 ,  H01L29/739

CPC分类号： H01L29/739 ,  H03K17/0412

摘要： Disclosed is a method for controlling the recombination rate in the base region of a bipolar semiconductor component, and a bipolar semiconductor component.

摘要翻译： 公开了一种用于控制双极半导体部件和双极型半导体部件的基极区域中的复合率的方法。

公开(公告)号：US07982253B2

公开(公告)日：2011-07-19

申请号：US12184819

申请日：2008-08-01

申请人： Anton Mauder ,  Hans-Joachim Schulze ,  Carolin Tolksdorf ,  Winfried Kaindl ,  Armin Willmeroth

发明人： Anton Mauder ,  Hans-Joachim Schulze ,  Carolin Tolksdorf ,  Winfried Kaindl ,  Armin Willmeroth

IPC分类号： H01L29/94

CPC分类号： H01L27/0808 ,  H01L21/26513 ,  H01L27/0811 ,  H01L27/088 ,  H01L29/7836

摘要： A semiconductor device with a dynamic gate drain capacitance. One embodiment provides a semiconductor device. The device includes a semiconductor substrate, a field effect transistor structure including a source region, a first body region, a drain region, a gate electrode structure and a gate insulating layer. The gate insulating layer is arranged between the gate electrode structure and the body region. The gate electrode structure and the drain region partially form a capacitor structure including a gate-drain capacitance configured to dynamically change with varying reverse voltages applied between the source and drain regions. The gate-drain capacitance includes at least one local maximum at a given threshold or a plateau-like course at given reverse voltage.

摘要翻译： 具有动态栅极漏极电容的半导体器件。 一个实施例提供一种半导体器件。 该器件包括半导体衬底，场效应晶体管结构，其包括源区，第一体区，漏区，栅电极结构和栅极绝缘层。 栅极绝缘层设置在栅电极结构和体区之间。 栅极电极结构和漏极区域部分地形成电容器结构，其包括栅极 - 漏极电容，该栅极 - 漏极电容被配置为随着施加在源极和漏极区域之间的变化的反向电压而动态地改变。 栅极 - 漏极电容在给定的阈值下包括至少一个局部最大值，或者在给定的反向电压下包括平台状过程。

公开(公告)号：US07812427B2

公开(公告)日：2010-10-12

申请号：US11757451

申请日：2007-06-04

申请人： Anton Mauder ,  Hans-Peter Felsl ,  Manfred Pfaffenlehner ,  Hans-Joachim Schulze

发明人： Anton Mauder ,  Hans-Peter Felsl ,  Manfred Pfaffenlehner ,  Hans-Joachim Schulze

IPC分类号： H01L29/06

CPC分类号： H01L29/861 ,  H01L21/263 ,  H01L29/063 ,  H01L29/7395 ,  H01L29/74

摘要： A semiconductor component includes a semiconductor body and a second semiconductor zone of a first conductivity type that serves as a rear side emitter. The second semiconductor zone is preceded by a plurality of third semiconductor zones of a second conductivity type that is opposite to the first conductivity type. The third semiconductor zones are spaced apart from one another in a lateral direction. In addition, provided within the semiconductor body is a field stop zone spaced apart from the second semiconductor zone, thereby reducing an electric field in the direction toward the second semiconductor zone.

摘要翻译： 半导体部件包括半导体主体和用作后侧发射极的第一导电类型的第二半导体区。 第二半导体区域之前是与第一导电类型相反的多个第二导电类型的第三半导体区域。 第三半导体区域在横向彼此间隔开。 此外，设置在半导体本体内的是与第二半导体区间隔开的场阻挡区域，从而减小朝向第二半导体区域的方向的电场。

公开(公告)号：US07696600B2

公开(公告)日：2010-04-13

申请号：US11713226

申请日：2007-03-02

申请人： Anton Mauder ,  Hans-Joachim Schulze ,  Frank Pfirsch ,  Elmar Falck ,  Josef Lutz

发明人： Anton Mauder ,  Hans-Joachim Schulze ,  Frank Pfirsch ,  Elmar Falck ,  Josef Lutz

IPC分类号： H01L29/10 ,  H01L29/72

CPC分类号： H01L29/0834 ,  H01L29/7395 ,  H01L29/861

摘要： A semiconductor device in the form of an IGBT has a front side contact, a rear side contact, and a semiconductor volume disposed between the front side contact and the rear side contact. The semiconductor volume includes a field stop layer for spatially delimiting an electric field that can be formed in the semiconductor volume. The semiconductor volume further includes a plurality of semiconductor zones, the plurality of semiconductor zones spaced apart from each other and each inversely doped with respect to adjacent areas. The plurality of semiconductor zones are located within the field stop layer.

摘要翻译： IGBT形式的半导体器件具有前侧触点，后侧触点和设置在前侧触点和后侧触点之间的半导体体。 半导体体积包括用于空间地限定可以形成在半导体体积中的电场的场停止层。 半导体体积还包括多个半导体区域，多个半导体区域彼此间隔开并且相对于相邻区域反向掺杂。 多个半导体区域位于场停止层内。

公开(公告)号：US20080265315A1

公开(公告)日：2008-10-30

申请号：US12112710

申请日：2008-04-30

申请人： Anton Mauder ,  Hans-Joachim Schulze

发明人： Anton Mauder ,  Hans-Joachim Schulze

IPC分类号： H01L29/78 ,  H01L21/336

CPC分类号： H01L29/7813 ,  H01L29/0611 ,  H01L29/0619 ,  H01L29/0623 ,  H01L29/0878 ,  H01L29/1095 ,  H01L29/407 ,  H01L29/41766 ,  H01L29/7397

摘要： A semiconductor device with a semiconductor body and to a method for producing it. In one embodiment, the semiconductor body has first electrodes which contact first highly doped semiconductor zones and complementary-conduction body zones surrounding the first semiconductor zones. The semiconductor body has a second electrode which contacts a second highly doped semiconductor zone. Between the second semiconductor zone and the body zones, a drift zone is arranged. Control electrodes which are insulated from the semiconductor body by a gate oxide and act on the body zones for controlling the semiconductor device are arranged on the semiconductor body. The body zones have minority charge carrier injector zones with complementary conduction to the body zones, arranged between the first semiconductor zones and the drift zone.

摘要翻译： 具有半导体本体的半导体器件及其制造方法。 在一个实施例中，半导体本体具有接触第一高度掺杂半导体区域和围绕第一半导体区域的互补导电体区域的第一电极。 半导体本体具有接触第二高掺杂半导体区的第二电极。 在第二半导体区域和体区之间布置漂移区。 通过栅极氧化物与半导体本体绝缘并作用于体区的用于控制半导体器件的控制电极被布置在半导体本体上。 身体区域具有少数电荷载体注射器区域，其布置在第一半导体区域和漂移区域之间，与身体区域互补导电。

公开(公告)号：US20070069257A1

公开(公告)日：2007-03-29

申请号：US11521075

申请日：2006-09-14

申请人： Anton Mauder ,  Hans-Joachim Schulze

发明人： Anton Mauder ,  Hans-Joachim Schulze

IPC分类号： H01L29/76

CPC分类号： H01L29/7397 ,  H01L29/407 ,  H01L29/4236 ,  H01L29/872

摘要： A power semiconductor component includes a semiconductor body and a field electrode. The semiconductor body has a drift zone of a first conduction type and a further component defining a junction therebetween. The junction is configured to cause a space charge zone to propagate when a reverse voltage is applied to the junction. The field electrode is arranged adjacent to the drift zone, and is insulated from the semiconductor body by at least a dielectric layer. The dielectric layer has a first section and a second section, the first section arranged nearer to the junction and having a higher dielectric constant than the second section.

摘要翻译： 功率半导体部件包括半导体本体和场电极。 半导体本体具有第一导电类型的漂移区和限定它们之间的连接的另外的元件。 结点被配置为当反向电压施加到结点时使空间电荷区传播。 场电极被布置成与漂移区相邻，并且通过至少介电层与半导体本体绝缘。 电介质层具有第一部分和第二部分，第一部分布置成更靠近结并且具有比第二部分更高的介电常数。

公开(公告)号：US20050133857A1

公开(公告)日：2005-06-23

申请号：US11016963

申请日：2004-12-20

申请人： Anton Mauder ,  Hans-Joachim Schulze

发明人： Anton Mauder ,  Hans-Joachim Schulze

IPC分类号： H01L29/06 ,  H01L29/08 ,  H01L29/40 ,  H01L29/739 ,  H01L29/861 ,  H01L29/76

CPC分类号： H01L29/402 ,  H01L29/0834 ,  H01L29/7395 ,  H01L29/861

摘要： A vertical semiconductor component having a semiconductor body, which has an inner region and an edge region that is arranged between the inner region and an edge of the semiconductor body. At least one semiconductor junction between a first semiconductor zone of a first conduction type, said first semiconductor zone being arranged in the region of a first side of the semiconductor body in the inner region, and a second semiconductor zone of the second conduction type, said second semiconductor zone adjoining the first semiconductor zone in the vertical direction. A contiguous third semiconductor zone of the second conduction type, said third semiconductor zone being arranged at a distance from the first semiconductor zone in the second semiconductor zone in the vertical direction of the semiconductor body and extending as far as the edge region in the lateral direction of the semiconductor body, and the doping of the third semiconductor zone being selected in such a manner that it is completely depleted of charge carriers when a reverse voltage is applied to the pn junction.

摘要翻译： 一种具有半导体本体的垂直半导体部件，其具有布置在半导体本体的内部区域和边缘之间的内部区域和边缘区域。 在第一导电类型的第一半导体区域之间的至少一个半导体结，所述第一半导体区域布置在所述内部区域中的所述半导体本体的第一侧的区域中，以及所述第二导电类型的第二半导体区域， 第二半导体区在垂直方向上邻接第一半导体区。 第二导电类型的连续的第三半导体区域，所述第三半导体区域在半导体本体的垂直方向上与所述第二半导体区域中的所述第一半导体区域一定距离设置，并且在横向方向上延伸至所述边缘区域 并且以这样的方式选择第三半导体区域的掺杂，使得当向pn结施加反向电压时，其完全耗尽电荷载流子。