摘要:
A pattern forming method includes providing and curing a under-layer film containing a radiation-sensitive acid generator which generates an acid upon exposure to radiation on a substrate. The under-layer film is irradiated with radiation through a mask to cause an acid to be selectively generated in an exposed area of the under-layer film. An upper-layer film which does not contain a radiation-sensitive acid generator and which contains a composition capable of polymerizing or crosslinking by an action of an acid is provided. A cured film is provided by polymerization or crosslinking selectively in an area of the upper-layer film corresponding to the exposed area of the under-layer film in which the acid has been generated. An area of the upper-layer film corresponding to an area of the under-layer film in which the acid has not been generated is removed.
摘要:
A method for forming a pattern contains (1) a step of forming an underlayer film containing (A) a radiation-sensitive acid generator capable of generating an acid upon exposure to radiation rays or (B) a radiation-sensitive base generator capable of generating a base upon exposure to radiation rays on a substrate; (2) a step of irradiating the underlayer film with radiation rays through a mask with a predetermined pattern to obtain an exposed underlayer film portion having been selectively exposed through the predetermined pattern; (3) a step of forming (C) an organic thin film on the underlayer film so as to attain chemical bonding of the exposed underlayer film portion with the organic thin-film formed on the exposed underlayer film portion; and (4) a step of removing the organic thin film formed on areas of the underlayer film other than the exposed underlayer film portion.
摘要:
A pattern formation method suitable for forming micro-patterns using electron beams (EB), X-rays, or extreme ultraviolet radiation (EUV) is provided. The method includes the following steps in the following order: (1) a step of forming and curing a under-layer film containing a radiation-sensitive acid generator which generates an acid upon exposure to radiation on a substrate, (2) a step of irradiating the under-layer film with radiation through a mask to cause an acid to be selectively generated in the exposed area of the under-layer film, (3) a step of forming an upper-layer film which does not contain a radiation-sensitive acid generator, but contains a composition capable of polymerization or crosslinking by the action of an acid, (4) a step of forming a cured film by polymerization or crosslinking selectively in the area of the upper-layer film corresponding to the area of the under-layer film in which the acid has been generated, and (5) a step of removing the area of the upper-layer film corresponding to the area of the under-layer film in which the acid has not been generated.
摘要:
A novel polysiloxane suitable as a resin component of a chemically-amplified resist exhibiting particularly excellent I-D bias, depth of focus (DOF), and the like, a novel silane compound useful as a raw material for synthesizing the polysiloxane, and a radiation-sensitive resin composition comprising the polysiloxane are provided.The silane compound is shown by the following formula (I), and the polysiloxane has a structural unit shown by the following formula (1), wherein R is an alkyl group, R1 and R2 individually represent a fluorine atom, lower alkyl group, or lower fluoroalkyl group, n is 0 or 1, k is 1 or 2, and i is an integer of 0 to 10.The radiation-sensitive resin composition comprises the polysiloxane and a photoacid generator.
摘要:
A radiation sensitive refractive index changing composition comprising (A) a decomposable compound, (B) a non-decomposable compound having a higher refractive index than the decomposable compound (A), (C) a radiation sensitive decomposer and (D) a stabilizer. By exposing this composition to radiation through a pattern mask, the above components (C) and (A) of an exposed portion decompose to create a refractive index difference between the exposed portion and an unexposed portion, thereby forming a pattern having different refractive indices.
摘要:
A radiation-sensitive resin composition comprising (A) a resin containing a structural unit of the following formula (I), (B) a resin containing a recurring unit of the following formula (II), and (C) a photoacid generator, wherein R1 represents a substituted or unsubstituted divalent (alicyclic) hydrocarbon, R2 represents a lower alkyl group or a monovalent (substituted) alicyclic hydrocarbon group, or any two R2s form in combination a divalent (substituted) alicyclic hydrocarbon group, with the remaining R2 being a lower alkyl group or a monovalent (substituted) alicyclic hydrocarbon group, wherein R3 represents a hydrogen atom, fluorine atom, or trifluoromethyl group, R4 represents a (substituted) hydrocarbon group with a valence of (c+1), (substituted) alicyclic hydrocarbon with a valence of (c+1), or (substituted) aromatic group with a valence of (c+1), R5 represents a hydrogen atom or a monovalent acid-dissociable group, a and b individually represent an integer of 0-3, provided that (a+b)≧1 is satisfied, and c is an integer of 1-3. The radiation-sensitive resin composition has a high transparency at a wavelength of 193 nm or less and is particularly excellent in LER.
摘要:
A radiation-sensitive resin composition comprising an acid-labile group-containing resin and a photoacid generator is disclosed. The resin has a structure of the formula (1), wherein R1 represents a hydrogen atom, a monovalent acid-labile group, an alkyl group having 1-6 carbon atoms which does not have an acid-labile group, or an alkylcarbonyl group having 2-7 carbon atoms which does not have an acid-labile group, X1 represents a linear or branched fluorinated alkyl group having 1-4 carbon atoms, and R2 represents a hydrogen atom, a linear or branched alkyl group having 1-10 carbon atoms, or a linear or branched fluorinated alkyl group having 1-10 carbon atoms. The resin composition exhibits high transmittance of radiation, high sensitivity, resolution, and pattern shape, and is useful as a chemically amplified resist in producing semiconductors at a high yield.
摘要:
A novel polysiloxane having the following structural units (I) and/or (II) and the structural unit (III), wherein A1 and A2 are an acid-dissociable monovalent organic group, R1 is hydrogen, monovalent (halogenated) hydrocarbon, halogen, or amino, R2 is monovalent (halogenated) hydrocarbon group, or halogen. A method of preparing such a polysiloxane, a silicon-containing alicyclic compound providing this polysiloxane, and a radiation-sensitive resin composition comprising this polysiloxane are also provided. The polysiloxane is useful as a resin component for a resist material, effectively senses radiation with a short wavelength, exhibits high transparency to radiation and superior dry etching properties, and excels in basic resist properties required for resist materials such as high sensitivity, resolution, developability, etc.
摘要:
An N-sulfonyloxyimide compound having the formula (1): wherein X represents a single bond or a double bond, Y and Z represent a hydrogen atom or others and may combine to form a cyclic structure; and R is a group having the formula (2): wherein X1 represents an organic group having an ester linkage, R1 represents an alkyl group or an alkoxyl group; and m is an integer of 1 to 11 and n is an integer of 0 to 10, satisfying m+n≦11; and chemically amplified positive and negative radiation-sensitive resin compositions using the compound are provided. The N-sulfonyloxyimide compound is a good radiation-sensitive acid-generating agent, has no problem of volatilization or side reaction, can keep dark reaction from taking place during the storage. The compound is useful as a component of radiation-sensitive chemically amplified resists.
摘要翻译:具有式(1)的N-磺酰氧基酰亚胺化合物:其中X表示单键或双键,Y和Z表示氢原子等,可以结合形成环状结构; 并且R是具有式(2)的基团:其中X1表示具有酯键的有机基团,R1表示烷基或烷氧基; m为1〜11的整数,n为0〜10的整数,满足m + n <11。 并提供使用该化合物的化学放大的正和负辐射敏感性树脂组合物。 N-磺酰氧基酰亚胺化合物是良好的辐射敏感性产酸剂,不存在挥发或副反应的问题,能够保持保存期间的黑色反应。 该化合物可用作辐射敏感的化学放大抗蚀剂的组分。
摘要:
A radiation sensitive resin composition for microlens comprising (a) an alkali-soluble resin, (b) a 1,2-quinonediazide compound, (c) a compound having at least 2 epoxy groups in the molecule, (d) a melamine and (e) a trihalomethyltriazine or an onium salt, which composition exhibits high sensitivity, high resolution and high yield of residual film thickness in the formation of a lens pattern and is small in dependency on heating conditions in the preparation of a microlens.