摘要:
The present invention is directed to a system, a module, and an apparatus and method for forming a microelectronic memory device. In one embodiment, a system includes a processor and a controller coupled to the processor with at least one memory module coupled to the controller, the module including a pair of memory devices oppositely positioned on respective surfaces of a substrate and interconnected by members extending through the substrate that couple terminals of the devices, the terminals being selected to include a group of terminals that are configured to communicate functionally compatible signals.
摘要:
The present invention is directed to a system, a module, and an apparatus and method for forming a microelectronic memory device. In one embodiment, a system includes a processor and a controller coupled to the processor with at least one memory module coupled to the controller, the module including a pair of memory devices oppositely positioned on respective surfaces of a substrate and interconnected by members extending through the substrate that couple terminals of the devices, the terminals being selected to include a group of terminals that are configured to communicate functionally compatible signals.
摘要:
A system and method for decoding command signals that includes a command decoder configured to generate internal control signals to perform an operation based on the command signals and an operating state. The same combination of command signals can request different commands depending on the operating state. A command is selected from a first set of operations according to the command signals when the memory system is in a first operating state and a command is selected from a second set of operations according to the command signals when the memory system is in a second operating state.
摘要:
A technique to increase transfer rate of command and address signals via a given number of command and address pins in each of one or more integrated circuit memory devices during a clock cycle of a clock signal. In one example embodiment, the command and address signals are sent on both rising and falling edges of a clock cycle of a clock signal to increase the transfer rate and essentially reduce the number of required command and address pins in each integrated circuit memory device.
摘要:
A technique to increase transfer rate of command and address signals via a given number of command and address pins in each of one or more integrated circuit memory devices during a clock cycle of a clock signal. In one example embodiment, the command and address signals are sent on both rising and falling edges of a clock cycle of a clock signal to increase the transfer rate and essentially reduce the number of required command and address pins in each integrated circuit memory device.
摘要:
A technique to increase transfer rate of command and address signals via a given number of command and address pins in each of one or more integrated circuit memory devices during a clock cycle of a clock signal. In one example embodiment, the command and address signals are sent on both rising and falling edges of a clock cycle of a clock signal to increase the transfer rate and essentially reduce the number of required command and address pins in each integrated circuit memory device.
摘要:
A multi-bank memory includes memory cells arranged in individually selectable banks that share column select signals. The memory cells are addressed by a row decoder that activates word lines to couple data onto digit lines. The digit lines are coupled to input/output lines through first and second series-connected switches. The first switches are input/output switches that are controlled by column select signals that are shared between multiple banks. The second switches are bank select switches that are controlled by a bank decoder, for coupling only one of the banks to input/output lines and isolating the other banks from input/output lines. The invention reduces timing requirements between operations in different banks, and allows concurrent operations in different banks, thereby increasing the speed at which the memory operates.
摘要:
A technique to increase transfer rate of command and address signals via a given number of command and address pins in each of one or more integrated circuit memory devices during a clock cycle of a clock signal. In one example embodiment, the command and address signals are sent on both rising and falling edges of a clock cycle of a clock signal to increase the transfer rate and essentially reduce the number of required command and address pins in each integrated circuit memory device.
摘要:
A synchronization circuit performs bit-to-bit timing correction of respective digital signals in digital signal packets applied to a packetized memory device. Each digital signal packet includes a plurality of digital signals applied to respective latches in the packetized memory device. A clock generator circuit generates a plurality of internal clock signals responsive to the external clock signal, each internal clock signal having a corresponding phase relative to the external clock signal. A plurality of selection circuits are coupled to the clock generator circuit and each has an output coupled to a clock terminal of an associated latch. Each selection circuit applies one of the internal clock signals to clock the associated latch in response to a phase command signal. An evaluation circuit receives digital signals sequentially stored in a selected one of the latches and generates a results signal indicating whether each of the digital signals has an expected value. A control circuit sequentially selects the latches and operates for each selected latch to adjust the phase command signals applied to the selection circuit coupled to the selected latch and store respective results signals sequentially received from the evaluation circuit for each phase command signal. The control circuit generates a final phase command signal from the stored results signals and applies each final phase command signal to the corresponding selection circuit Each of the final phase command signals adjusts the phase of clock signal applied to the associated latch relative to the digital signal applied to the latch so that the digital signal is successfully captured responsive to the clock signal.
摘要:
A system for detecting an initialization flag signal and distinguishing it from a normal flag signal having half the duration of the initialization flag signal. The initialization flag detection system may be included in the command buffer of a packetized DRAM that is used in a computer system. In one embodiment, the initialization flag detection system includes a pair of shift registers receiving the flag signal at their respective data inputs. One of the shift registers is clocked by a signal corresponding to an externally applied to command clock signal, while the other shift register is clocked by a quadrature clock signal. Together, the shift registers store a number of samples taken over a duration that is longer than the duration of the normal flag signal. The outputs of the shift registers are applied to a logic circuit, such as a NAND gate, that generates an initialization signal when all of the samples stored in the shift registers correspond to the logic levels of the flag signal. In another embodiment, the initialization flag detection system includes a plurality of latches receiving the flag signals at their data inputs. The latches are clocked by respective strobe signals corresponding to the command clock signal, but having phases that differ from each other. The outputs of the latches are applied to a logic circuit, such as a NAND gate. Finally, in another embodiment of the invention, the bits of the command packet are sampled along with the flag signal and compared to the samples of the flag signal to detect when a command packet having a predetermined pattern does not correspond to a flag signal having a predetermined pattern.