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公开(公告)号：US07669173B2
公开(公告)日：2010-02-23
申请号：US11635322
申请日：2006-12-07
申请人： Henning Haffner
发明人： Henning Haffner
IPC分类号： G06F17/50
CPC分类号： B82Y40/00 , B82Y10/00 , G03F1/78 , H01J37/3174
摘要： A method of making a semiconductor device is disclosed. A target mask pattern is provided which includes features to be exposed on the mask, and features to be non-exposed on the mask. The to be exposed features are fractured by searching for geometries on the target mask pattern that meet one or more conditions, identifying mask pattern structures to be fractured, fracturing the identified pattern structures according to a fracture instruction list, creating a set of mask exposure patterns, exposing the mask to the mask exposure pattern, and developing the mask.
摘要翻译： 公开了制造半导体器件的方法。 提供了目标掩模图案，其包括要在掩模上曝光的特征，以及不暴露在掩模上的特征。 要暴露的特征通过在目标掩模图案上搜索满足一个或多个条件的几何形状而断裂，识别要断裂的掩模图案结构，根据断裂指令列表破碎所识别的图案结构，创建一组掩模曝光图案 将掩模暴露于掩模曝光图案，并显影掩模。
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42.发明申请CALIBRATION AND VERIFICATAION STRUCTURES FOR USE IN OPTICAL PROXIMITY CORRECTION 有权用于光学近似校正的校准和验证结构公开(公告)号：US20100005440A1
公开(公告)日：2010-01-07
申请号：US12168383
申请日：2008-07-07
IPC分类号： G06F17/50
摘要： A method of training an Optical Proximity Correction (OPC) model comprises symmetrizing a complex design to be a test pattern having orthogonal symmetry. Symmetrizing may comprise establishing a axis of symmetry passing through the design, thereby dividing the design into two portions; deleting one of the two portions; and mirror-imaging the other of the two portions about the axis of symmetry. The design may be centered.
摘要翻译： 训练光学邻近校正（OPC）模型的方法包括将复杂设计对称为具有正交对称性的测试图案。 对称可以包括建立通过设计的对称轴，从而将设计分成两部分; 删除两部分之一; 并且围绕对称轴对两个部分中的另一个进行镜像成像。 设计可能居中。
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43.发明申请公开(公告)号：US20090077525A1
公开(公告)日：2009-03-19
申请号：US11855887
申请日：2007-09-14
申请人： Henning Haffner
发明人： Henning Haffner
IPC分类号： G06F17/50
CPC分类号： G03F1/36
摘要： System and method for using adjustment patterns as well as physical parameters as targets to control mask structure dimensions using optical proximity correction. A method for correcting layer patterns comprises selecting optimum sacrificial patterns, defining virtual targets from the optimum sacrificial patterns, and executing an optical proximity correction process with the virtual targets to correct layer patterns. The selecting of the optimum sacrificial patterns may be performed in a separate processing stage, thereby reducing the number of targets to be investigated during a process window optical proximity correction, thereby reducing the runtime, processing, and memory requirements.
摘要翻译： 使用调整图案以及物理参数作为目标的系统和方法，以使用光学邻近校正来控制掩模结构尺寸。 用于校正层图案的方法包括选择最佳牺牲图案，从最佳牺牲图案定义虚拟目标，以及执行与虚拟目标的光学邻近校正处理以校正层图案。 可以在单独的处理阶段中执行最佳牺牲图案的选择，从而在处理窗口光学邻近校正期间减少要调查的目标的数量，从而减少运行时间，处理和存储器要求。
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公开(公告)号：US20090053654A1
公开(公告)日：2009-02-26
申请号：US11841418
申请日：2007-08-20
IPC分类号： G03C5/00
CPC分类号： G03F1/30
摘要： A method for generating a mask pattern is provided. A target lithographic pattern comprising a plurality of first geometric regions is provided, wherein the regions between the plurality of first geometric regions comprise first spaces. The target lithographic pattern is transformed, and the transformed pattern is decomposed into a first pattern and a second pattern.
摘要翻译： 提供了一种用于产生掩模图案的方法。 提供包括多个第一几何区域的目标光刻图案，其中所述多个第一几何区域之间的区域包括第一空间。 目标光刻图案被变换，变换图案被分解为第一图案和第二图案。
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公开(公告)号：US20080141212A1
公开(公告)日：2008-06-12
申请号：US11635322
申请日：2006-12-07
申请人： Henning Haffner
发明人： Henning Haffner
IPC分类号： G06F17/50
CPC分类号： B82Y40/00 , B82Y10/00 , G03F1/78 , H01J37/3174
摘要： A method of making a semiconductor device is disclosed. A target mask pattern is provided which includes features to be exposed on the mask, and features to be non-exposed on the mask. The to be exposed features are fractured by searching for geometries on the target mask pattern that meet one or more conditions, identifying mask pattern structures to be fractured, fracturing the identified pattern structures according to a fracture instruction list, creating a set of mask exposure patterns, exposing the mask to the mask exposure pattern, and developing the mask.
摘要翻译： 公开了制造半导体器件的方法。 提供了目标掩模图案，其包括要在掩模上曝光的特征，以及不暴露在掩模上的特征。 要暴露的特征通过在目标掩模图案上搜索满足一个或多个条件的几何形状而断裂，识别要断裂的掩模图案结构，根据断裂指令列表破碎所识别的图案结构，创建一组掩模曝光图案 将掩模暴露于掩模曝光图案，并显影掩模。
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公开(公告)号：US20080119048A1
公开(公告)日：2008-05-22
申请号：US11602886
申请日：2006-11-21
IPC分类号： H01L21/302
CPC分类号： G03F1/50 , G02B5/3083 , Y10T428/24479
摘要： Lithography masks and methods of manufacture thereof are disclosed. A preferred embodiment comprises a method of manufacturing a lithography mask. The method includes providing a substrate, forming a first pattern in a first region of the substrate, and forming a second pattern in a second region of the substrate, the second pattern comprising patterns for features oriented differently than patterns for features of the first pattern. The method includes affecting a polarization rotation of light differently in the first region than in the second region of the substrate.
摘要翻译： 公开了平版印刷掩模及其制造方法。 优选实施例包括制造光刻掩模的方法。 所述方法包括提供衬底，在所述衬底的第一区域中形成第一图案，以及在所述衬底的第二区域中形成第二图案，所述第二图案包括不同于第一图案特征的图案的图案。 该方法包括在第一区域中比在衬底的第二区域中影响光的偏振旋转。
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47.发明授权Method of inspecting a mask or reticle for detecting a defect, and mask or reticle inspection system 有权检查掩模或掩模版以检测缺陷的方法，以及掩模或掩模版检查系统公开(公告)号：US07221788B2
公开(公告)日：2007-05-22
申请号：US10611067
申请日：2003-07-01
申请人： Steffen Schulze , Henning Haffner
发明人： Steffen Schulze , Henning Haffner
IPC分类号： G06K9/00
CPC分类号： G06T7/001 , G06T2207/30148
摘要： A method of inspecting a mask or reticle, the mask or reticle being provided with a pattern to be transferred onto a semiconductor wafer, the pattern having a defect, includes the step of creating a plurality of logical zones and uniquely associating each of said logical zones with a surface area of said pattern. Then, an inspection rule representing a characteristic sensitivity for detecting a defect is associated with each of said logical zones. An image of said pattern is then recorded and compared with a reference image of an ideal pattern for locating a defect within said pattern. One of said logical zones is then identified with said located defect and that inspection rule which is associated with said identified logical zone is retrieved from a memory. The inspection rule is then applied to a characteristic of said defect for determining, whether said defect is to be repaired. A signal can be issued in response to said determination.
摘要翻译： 一种检查掩模或掩模版的方法，所述掩模或掩模版具有要转印到半导体晶片上的图案，所述图案具有缺陷，所述方法包括以下步骤：创建多个逻辑区并将每个所述逻辑区域 具有所述图案的表面积。 然后，表示用于检测缺陷的特征灵敏度的检查规则与每个所述逻辑区域相关联。 然后记录所述图案的图像，并与用于定位所述图案内的缺陷的理想图案的参考图像进行比较。 然后用所述定位的缺陷识别所述逻辑区域中的一个，并且从存储器检索与所述识别的逻辑区域相关联的检查规则。 然后将检查规则应用于所述缺陷的特征，以确定是否修复所述缺陷。 可以响应于所述确定而发出信号。
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公开(公告)号：US07094674B2
公开(公告)日：2006-08-22
申请号：US10739477
申请日：2003-12-18
IPC分类号： H01L21/44
CPC分类号： H01L27/10888 , H01L21/76897
摘要： The invention relates to a method for production of contacts on a wafer, preferably with the aid of a lithographic process. The preferred embodiment provides a method which overcomes the disadvantages of the complex point/hole lithography process, and which avoids any increase in the process complexity. This method is achieved in that a strip structure extending over two layers is used to structure the contacts. The strip structure in the first layer is rotated at a predetermined angle with respect to the strip structure in the second layer, and the contacts are formed in the mutually overlapping areas of the strip structures in the two layers.
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49.发明授权公开(公告)号：US07056628B2
公开(公告)日：2006-06-06
申请号：US10653537
申请日：2003-09-02
申请人： Shahid Butt , Henning Haffner
发明人： Shahid Butt , Henning Haffner
IPC分类号： G01F9/00
摘要： A mask is configured for projecting a structure pattern onto a semiconductor substrate in an exposure unit. The exposure unit has a minimum resolution limit for projecting the structure pattern onto the semiconductor substrate. The mask has a substrate, at least one raised first structure element on the substrate which has a lateral extent which is at least the minimum lateral extent that can be attained by the exposure unit, a configuration second raised structure elements which are arranged in an area surrounding the at least one first structure element on the substrate in the form of a matrix with a row spacing and a column spacing, whose shape and size are essentially identical to one another, and which have a respective lateral extent that is less than the minimum resolution limit of the exposure unit.
摘要翻译： 掩模被配置为在曝光单元中将结构图案投影到半导体衬底上。 曝光单元具有用于将结构图案投影到半导体衬底上的最小分辨率限制。 所述掩模具有衬底，所述衬底上至少有一个凸起的第一结构元件，其具有至少可由曝光单元获得的最小横向范围的横向范围;布置在区域中的构造的第二凸起结构元件 围绕基板上的至少一个第一结构元件以矩阵的形式具有行间距和列间距，其形状和尺寸彼此基本相同，并且具有小于最小值的相应横向范围 曝光单位的分辨率限制。
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公开(公告)号：US20050125164A1
公开(公告)日：2005-06-09
申请号：US10984797
申请日：2004-11-10
IPC分类号： G01B5/28 , G01B5/30 , G01N21/956 , G03F1/00 , G03F7/20
CPC分类号： G01N21/95692 , G01N2021/95676 , G03F1/84
摘要： The method of dynamically monitoring a reticle includes preventively macro monitoring and defect inspecting with regard to mechanical loading, including particle deposits or electrostatically induced damage, and energy load, including the associated changes to the reticle material and surface characteristics. Different surface distributions of the absorber layer as well as characteristics of the exposure system, such as N2 purging of the projection lens/reticle area in order to reduce contamination and recrystallization on optically active surfaces are considered.
摘要翻译： 动态监测掩模版的方法包括对机械载荷（包括颗粒沉积物或静电诱发的损伤）以及能量负载（包括对掩模版材料的相关变化和表面特性）的预防性宏观监测和缺陷检查。 考虑吸收层的不同表面分布以及曝光系统的特性，例如投影透镜/掩模版区域的N 2清洗，以减少光学活性表面上的污染和重结晶。
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