公开(公告)号：US07056628B2

公开(公告)日：2006-06-06

申请号：US10653537

申请日：2003-09-02

申请人： Shahid Butt ,  Henning Haffner

发明人： Shahid Butt ,  Henning Haffner

IPC分类号： G01F9/00

CPC分类号： G03F1/32 ,  G03F1/36

摘要： A mask is configured for projecting a structure pattern onto a semiconductor substrate in an exposure unit. The exposure unit has a minimum resolution limit for projecting the structure pattern onto the semiconductor substrate. The mask has a substrate, at least one raised first structure element on the substrate which has a lateral extent which is at least the minimum lateral extent that can be attained by the exposure unit, a configuration second raised structure elements which are arranged in an area surrounding the at least one first structure element on the substrate in the form of a matrix with a row spacing and a column spacing, whose shape and size are essentially identical to one another, and which have a respective lateral extent that is less than the minimum resolution limit of the exposure unit.

摘要翻译： 掩模被配置为在曝光单元中将结构图案投影到半导体衬底上。 曝光单元具有用于将结构图案投影到半导体衬底上的最小分辨率限制。 所述掩模具有衬底，所述衬底上至少有一个凸起的第一结构元件，其具有至少可由曝光单元获得的最小横向范围的横向范围;布置在区域中的构造的第二凸起结构元件 围绕基板上的至少一个第一结构元件以矩阵的形式具有行间距和列间距，其形状和尺寸彼此基本相同，并且具有小于最小值的相应横向范围 曝光单位的分辨率限制。

公开(公告)号：US06842222B2

公开(公告)日：2005-01-11

申请号：US10406888

申请日：2003-04-04

申请人： Gerhard Kunkel ,  Shahid Butt ,  Alan Thomas ,  Juergen Preuninger

发明人： Gerhard Kunkel ,  Shahid Butt ,  Alan Thomas ,  Juergen Preuninger

IPC分类号： G03B27/32 ,  G03B27/42 ,  G03B27/52 ,  G03F7/20 ,  G03F7/207

CPC分类号： G03F7/70141 ,  G03F7/70333

摘要： A projected image is formed during a material substrate. A photolithographic mask is illuminated with substantially coherent light at an oblique angle of incidence with respect to a surface of the photolithographic mask. The photolithographic mask includes a substantially transparent mask substrate and one or more lines and spaces patterns formed on the mask substrate and having a periodicity P. The mask substrate includes at least one phase shifting region. At least part of the light that is transmitted through the photolithographic mask is collected using one or more projection lenses which project the portion of the transmitted light onto the material substrate. The material substrate is disposed substantially parallel with, but at a distance from, a focal plane of the projection lens system. The phase shifting region of the mask substrate and the distance from the focal plane are selected such that a substantially focused image is projected onto the material substrate that includes the lines and spaces patterned but with a periodicity P/2.

摘要翻译： 在材料基板期间形成投影图像。 以相对于光刻掩模的表面的倾斜入射角的基本上相干的光照射光刻掩模。 光刻掩模包括基本上透明的掩模基板和形成在掩模基板上并且具有周期P的一个或多个线和间隔图案。掩模基板包括至少一个相移区域。 通过光刻掩模透射的光的至少一部分使用一个或多个将透射光的一部分投射到材料基底上的投影透镜来收集。 材料基板设置成与投影透镜系统的焦平面大致平行，但距离投影透镜系统的焦平面。 选择掩模基板的相移区域和与焦平面的距离，使得将基本上聚焦的图像投影到包括图案化但具有周期性P​​ / 2的线和间隔的材料基板上。

公开(公告)号：US06670646B2

公开(公告)日：2003-12-30

申请号：US10074479

申请日：2002-02-11

申请人： Zhijian Lu ,  Shahid Butt ,  Alois Gutmann

发明人： Zhijian Lu ,  Shahid Butt ,  Alois Gutmann

IPC分类号： H01L3300

CPC分类号： G03F1/30 ,  G03F1/36 ,  G03F7/70441

摘要： A mask (118) and method for patterning a semiconductor wafer. The mask (118) includes apertures (122) and assist lines (124) disposed between apertures (122). The assist lines (124) reduce the diffraction effects of the lithographic process, resulting in improved depth of focus and resolution of patterns on a semiconductor wafer.

公开(公告)号：US06606151B2

公开(公告)日：2003-08-12

申请号：US09916917

申请日：2001-07-27

申请人： Gerhard Kunkel ,  Shahid Butt ,  Joseph Kirk

发明人： Gerhard Kunkel ,  Shahid Butt ,  Joseph Kirk

IPC分类号： G01B900

CPC分类号： G01M11/0242

摘要： Methods and reticles for evaluating lenses are disclosed. In one instance, a reticle which permits light to pass therethrough is provided which includes a first surface with a grating profile formed thereon. The grating profile includes a plurality of grouped stepped portions. Each group of the stepped portions includes a first step which prevents light from propagating therethrough, a second step which propagates light therethrough and a third step which propagates light therethrough at an angle 60 degrees out of phase with the light propagated through the second step.

摘要翻译： 公开了用于评估透镜的方法和掩模版。 在一种情况下，提供允许光通过的掩模版，其包括形成有光栅轮廓的第一表面。 光栅轮廓包括多个分组的阶梯部分。 每组台阶部分包括防止光从其中传播的第一步骤，传播光的第二步骤，以及第三步骤，其以与第二步骤传播的光成60度角异相传播光。

公开(公告)号：US07413833B2

公开(公告)日：2008-08-19

申请号：US10846275

申请日：2004-05-14

申请人： Shahid Butt ,  Scott Bukofsky ,  Ramachandra Divakaruni ,  Carl Radens ,  Wayne Ellis

发明人： Shahid Butt ,  Scott Bukofsky ,  Ramachandra Divakaruni ,  Carl Radens ,  Wayne Ellis

IPC分类号： G03F1/00

CPC分类号： G03F1/30 ,  H01L21/3083 ,  H01L21/32139 ,  H01L27/0207 ,  H01L27/1087 ,  H01L27/10882

摘要： An active area pattern is formed atop a deep trench pattern with a single exposure using an alternative phase-shift mask. To prevent adjacent spaces of opposite phase from intersecting one another at the ends of substantially opaque features of the active area pattern, one or more connectors are used to connect the ends of the substantially opaque patterns. Trench regions of the deep trench pattern are arranged such that the conduction path of the connectors are interrupted and prevent the lines from shorting to one another. Alternatively, a bit line pattern or a word line pattern having a lines and spaces array and a support region are printed with a single exposure using an alternating phase-shift mask. At one end of the array region, lines having a respective phase shift extend into the support region, and lines of the opposite phase shift are terminated. At the opposite end of the array, the lines that have the opposite phase shift extend into the support region, and the lines of having the respective phase shift are terminated.

摘要翻译： 使用替代的相移掩模，通过单次曝光在深沟槽图案之上形成有源区域图案。 为了防止相对相位的相邻空间在有源区域图案的基本不透明特征的端部彼此相交，使用一个或多个连接器来连接基本不透明图案的端部。 深沟槽图案的沟槽区域布置成使得连接器的传导路径被中断，并且防止线路彼此短路。 或者，使用交替相移掩模以单次曝光印刷具有线和间隔阵列的位线图案或字线图案和支撑区域。 在阵列区域的一端，具有各自的相移的线延伸到支撑区域，并且相反相移的线路终止。 在阵列的相对端，具有相反相移的线延伸到支撑区域中，并且具有相应相移的线路终止。

公开(公告)号：US07016027B2

公开(公告)日：2006-03-21

申请号：US10431368

申请日：2003-05-08

申请人： Shahid Butt ,  Shoaib Zaidi

发明人： Shahid Butt ,  Shoaib Zaidi

IPC分类号： G01N21/00

CPC分类号： G01N21/4788 ,  G01N21/41 ,  G01N21/956 ,  G01N2021/4173 ,  G01N2021/95676

摘要： A method and system for detecting the quality of an alternating phase shift mask having a number of 180-degree phase shift areas alternating with a number of 0-degree phase shift areas is disclosed. In operation, a light source which provides wavelength-adjustable incident lights illuminates the incident lights on the alternating phase shift mask. The light outputs from boundaries between the 0-degree phase shift areas and the 180-degree phase shift areas of the alternating phase shift mask are detected. Relation curves of the wavelength of the incident light and a light intensity of the boundaries are then calculated. Phase errors of the alternating phase shift mask can thus be measured from the relation curves.

摘要翻译： 公开了一种用于检测具有与多个0度相移区域交替的180度相移区域的交变相移掩模的质量的方法和系统。 在操作中，提供波长可调入射光的光源照射交替相移掩模上的入射光。 检测从0度相移区域和交替相移掩模的180度相移区域之间的边界输出的光。 然后计算入射光的波长和边界的光强度的关系曲线。 因此可以从关系曲线测量交变相移掩模的相位误差。

公开(公告)号：US20050255387A1

公开(公告)日：2005-11-17

申请号：US10846275

申请日：2004-05-14

申请人： Shahid Butt ,  Scott Bukofsky ,  Ramachandra Divakaruni ,  Carl Radens ,  Wayne Ellis

发明人： Shahid Butt ,  Scott Bukofsky ,  Ramachandra Divakaruni ,  Carl Radens ,  Wayne Ellis

IPC分类号： G03C5/00 ,  G03F1/00 ,  G03F9/00 ,  H01L21/308 ,  H01L21/3213 ,  H01L21/8242 ,  H01L27/02

CPC分类号： G03F1/30 ,  H01L21/3083 ,  H01L21/32139 ,  H01L27/0207 ,  H01L27/1087 ,  H01L27/10882

摘要： An active area pattern is formed atop a deep trench pattern with a single exposure using an alternative phase-shift mask. To prevent adjacent spaces of opposite phase from intersecting one another at the ends of substantially opaque features of the active area pattern, one or more connectors are used to connect the ends of the substantially opaque patterns. Trench regions of the deep trench pattern are arranged such that the conduction path of the connectors are interrupted and prevent the lines from shorting to one another. Alternatively, a bit line pattern or a word line pattern having a lines and spaces array and a support region are printed with a single exposure using an alternating phase-shift mask. At one end of the array region, lines having a respective phase shift extend into the support region, and lines of the opposite phase shift are terminated. At the opposite end of the array, the lines that have the opposite phase shift extend into the support region, and the lines of having the respective phase shift are terminated.

摘要翻译： 使用替代的相移掩模，通过单次曝光在深沟槽图案之上形成有源区域图案。 为了防止相对相位的相邻空间在有源区域图案的基本不透明特征的端部彼此相交，使用一个或多个连接器来连接基本不透明图案的端部。 深沟槽图案的沟槽区域布置成使得连接器的传导路径被中断，并且防止线路彼此短路。 或者，使用交替相移掩模以单次曝光印刷具有线和间隔阵列的位线图案或字线图案和支撑区域。 在阵列区域的一端，具有相应相移的线延伸到支撑区域，并且相反相移的线路终止。 在阵列的相对端，具有相反相移的线延伸到支撑区域中，并且具有相应相移的线路终止。

公开(公告)号：US20050168753A1

公开(公告)日：2005-08-04

申请号：US10771246

申请日：2004-02-03

申请人： Shahid Butt ,  Syed Shoaib Zaidi

发明人： Shahid Butt ,  Syed Shoaib Zaidi

IPC分类号： G01N21/88 ,  G01N21/956 ,  G03F7/20 ,  G01B9/02

CPC分类号： G03F7/70625 ,  G01N21/8806 ,  G01N21/956

摘要： The properties of features formed in a substrate are measured. Interferometric illumination is used to illuminate regions of a substrate so that the features of interest occupy a greater proportion of the illuminated area. The signal-to-noise ratio of the measurement signal is therefore increased, and the sensitivity of the measurement is thus improved.

摘要翻译： 测量在衬底中形成的特征的性质。 使用干涉照明来照射基底的区域，使得感兴趣的特征占照射面积的更大比例。 因此，测量信号的信噪比增加，从而提高了测量的灵敏度。

公开(公告)号：US06566219B2

公开(公告)日：2003-05-20

申请号：US09957937

申请日：2001-09-21

申请人： Gerhard Kunkel ,  Shahid Butt ,  Ramachandra Divakaruni ,  Armin M. Reith ,  Munir D. Naeem

发明人： Gerhard Kunkel ,  Shahid Butt ,  Ramachandra Divakaruni ,  Armin M. Reith ,  Munir D. Naeem

IPC分类号： H01L21475

CPC分类号： H01L27/10864 ,  H01L27/1087 ,  H01L27/10891

摘要： A method of forming a trench can be used in the fabrication of dynamic random access memory (DRAM) cells. In one aspect, a first layer of a first material (e.g., polysilicon) is formed over a semiconductor region (e.g., a silicon substrate). The first layer is patterned to remove portions of the first material. A second material (e.g., oxide) can then be deposited to fill the portions where the first material was removed. After removing the remaining portions of the first layer of first material, a trench can be etched in the semiconductor region. The trench would be substantially aligned to the second material.

摘要翻译： 形成沟槽的方法可用于制造动态随机存取存储器（DRAM）单元。 在一个方面，在半导体区域（例如，硅衬底）上形成第一材料（例如，多晶硅）的第一层。 图案化第一层以去除第一材料的部分。 然后可以沉积第二材料（例如，氧化物）以填充去除第一材料的部分。 在去除第一材料的第一层的剩余部分之后，可以在半导体区域中蚀刻沟槽。 沟槽将基本上对准第二材料。

公开(公告)号：US06316168B1

公开(公告)日：2001-11-13

申请号：US09290319

申请日：1999-04-12

申请人： Shahid Butt ,  Uwe Paul Schroeder

发明人： Shahid Butt ,  Uwe Paul Schroeder

IPC分类号： G03F736

CPC分类号： H01L21/0276 ,  H01L21/31144 ,  Y10S430/151

摘要： A method for etching a surface includes the steps of providing an under layer formed on the surface and a top layer formed on the under layer. The top layer is patterned to expose portions of the under layer, and a layer including silicon is formed on the exposed portions of the under layer. The top layer is removed to expose the under layer in portions other than the portions of the under layer having the silicon layer thereon, and the under layer is etched in portions other than the portions of the under layer having the silicon layer thereon to expose the surface.

摘要翻译： 一种用于蚀刻表面的方法包括以下步骤：提供形成在表面上的底层和形成在下层上的顶层。 将顶层图案化以暴露下层的部分，并且在底层的暴露部分上形成包括硅的层。 除去顶层以在除了其上具有硅层的下层的部分之外的部分中露出下层，并且在除了在其上具有硅层的下层的部分之外的部分中蚀刻下层以暴露 表面。