公开(公告)号：US20110256486A1

公开(公告)日：2011-10-20

申请号：US13158901

申请日：2011-06-13

申请人： Timothy A. Brunner ,  Sean D. Burns ,  Kuang-Jung Chen ,  Wu-Song Huang ,  Kafai Lai ,  Wai-Kin Li ,  Bernhard R. Liegl

发明人： Timothy A. Brunner ,  Sean D. Burns ,  Kuang-Jung Chen ,  Wu-Song Huang ,  Kafai Lai ,  Wai-Kin Li ,  Bernhard R. Liegl

IPC分类号： G03F7/20

CPC分类号： G03F7/091 ,  G03F7/70216 ,  Y10S430/127

摘要： An anti-reflective coating material, a microelectronic structure that includes an anti-reflective coating layer formed from the anti-reflective coating material and a related method for exposing a resist layer located over a substrate while using the anti-reflective coating layer provide for attenuation of secondary reflected vertical alignment beam radiation when aligning the substrate including the resist layer located thereover. Such enhanced vertical alignment provides for improved dimensional integrity of a patterned resist layer formed from the resist layer, as well as additional target layers that may be fabricated while using the resist layer as a mask.

摘要翻译： 防反射涂层材料，包括由抗反射涂层材料形成的抗反射涂层的微电子结构和用于在使用抗反射涂层的同时使位于基板上的抗蚀剂层曝光的相关方法提供衰减 当对准包括位于其上的抗蚀剂层的衬底时，二次反射垂直取向束辐射。 这种增强的垂直对准提供了由抗蚀剂层形成的图案化抗蚀剂层的改进的尺寸完整性，以及可以在使用抗蚀剂层作为掩模时制造的附加目标层。

公开(公告)号：US20100330810A1

公开(公告)日：2010-12-30

申请号：US12490353

申请日：2009-06-24

申请人： Kuang-Jung Chen ,  Ricardo A. Donaton ,  Wu-Song Huang ,  Wai-Kin Li

发明人： Kuang-Jung Chen ,  Ricardo A. Donaton ,  Wu-Song Huang ,  Wai-Kin Li

IPC分类号： H01L21/31

CPC分类号： H01L21/31122 ,  H01L21/823842 ,  H01L21/823857

摘要： The present invention provides a method of forming a threshold voltage adjusted gate stack in which an external acid diffusion process is employed for selectively removing a portion of a threshold voltage adjusting layer from one device region of a semiconductor substrate. The external acid diffusion process utilizes an acid polymer which when baked exhibits an increase in acid concentration which can diffuse into an underlying exposed portion of a threshold voltage adjusting layer. The diffused acid reacts with the exposed portion of the threshold voltage adjusting layer providing an acid reacted layer that can be selectively removed as compared to a laterally adjacent portion of the threshold voltage adjusting layer that is not exposed to the diffused acid.

摘要翻译： 本发明提供一种形成阈值电压调节的栅极叠层的方法，其中使用外部酸扩散工艺来从半导体衬底的一个器件区域选择性地去除一部分阈值电压调节层。 外部酸扩散方法使用酸性聚合物，其在烘烤时表现出酸浓度的增加，其可以扩散到阈值电压调节层的下部暴露部分。 扩散的酸与阈值电压调节层的暴露部分反应，提供酸反应层，与不暴露于扩散的酸的阈值电压调节层的横向相邻部分相比，可以选择性地除去酸反应层。

公开(公告)号：US07838198B2

公开(公告)日：2010-11-23

申请号：US11955451

申请日：2007-12-13

申请人： Kuang-Jung Chen ,  Wu-Song Huang ,  Wai-kin Li ,  Pushkara R. Varanasi

发明人： Kuang-Jung Chen ,  Wu-Song Huang ,  Wai-kin Li ,  Pushkara R. Varanasi

IPC分类号： G03F7/00 ,  G03F7/004 ,  G03F7/20 ,  G03F7/26 ,  G03F7/40

CPC分类号： G03F7/0045 ,  G03F7/0397 ,  G03F7/40

摘要： A method and a resist composition. The resist composition includes a polymer having repeating units having a lactone moiety, a thermal base generator capable of generating a base and a photosensitive acid generator. The polymer has the properties of being substantially soluble in a first solvent and becoming substantially insoluble after heating the polymer. The method includes forming a film of a photoresist including a polymer, a thermal base generator capable of releasing a base, a photosensitive acid generator, and a solvent. The film is patternwise imaged. The imaging includes exposing the film to radiation, resulting in producing an acid catalyst. The film is developed in an aqueous base, resulting in removing base-soluble regions and forming a patterned layer. The patterned layer is baked above the temperature, resulting in the thermal base generator releasing a base within the patterned layer and the patterned layer becoming insoluble in the solvent.

摘要翻译： 一种方法和抗蚀剂组合物。 抗蚀剂组合物包括具有内酯部分的重复单元的聚合物，能够产生碱的热碱发生剂和感光酸产生剂。 聚合物具有基本上可溶于第一溶剂的性质，并且在加热聚合物之后变得基本上不溶。 该方法包括形成包含聚合物的光致抗蚀剂膜，能够释放碱的热碱发生器，光敏酸产生剂和溶剂。 该影片被图案化成像。 成像包括将膜暴露于辐射，导致产生酸催化剂。 该膜在水性碱中显影，导致去除碱溶性区域并形成图案层。 图案化层被烘烤高于该温度，导致热基发生器释放图案化层内的基底并且图案化层变得不溶于溶剂。

公开(公告)号：US20090142704A1

公开(公告)日：2009-06-04

申请号：US11949190

申请日：2007-12-03

申请人： Kuang-Jung Chen ,  Wu-Song Huang ,  Wai-kin Li

发明人： Kuang-Jung Chen ,  Wu-Song Huang ,  Wai-kin Li

IPC分类号： G03F7/00

CPC分类号： G03F7/095

摘要： A method suitable for reducing side lobe printing in a photolithography process is enabled by the use of a barrier layer on top of a photoresist on a substrate. The barrier layer is absorbing at the imaging wavelength of the underlying photoresist and thus blocks the light from reaching the photoresist. A first exposure followed by a development in an aqueous base solution selectively removes a portion of the barrier layer to reveal a section of the underlying photoresist layer. At least a portion of the revealed section of the photoresist layer is then exposed and developed to form a patterned structure in the photoresist layer. The barrier layer can also be bleachable upon exposure and bake in the present invention.

摘要翻译： 通过在基板上的光致抗蚀剂的顶部上使用阻挡层，能够实现在光刻工艺中减少旁瓣印刷的方法。 阻挡层在下面的光致抗蚀剂的成像波长处吸收，从而阻挡光到达光致抗蚀剂。 第一曝光随后在碱性水溶液中显影，选择性地除去阻挡层的一部分以露出下面的光致抗蚀剂层的一部分。 然后将光致抗蚀剂层的显露部分的至少一部分曝光和显影以在光致抗蚀剂层中形成图案化结构。 在本发明中曝光和烘烤时，阻挡层也可以是可漂白的。

公开(公告)号：US07501353B2

公开(公告)日：2009-03-10

申请号：US11615272

申请日：2006-12-22

申请人： Wai-Kin Li ,  Wu-Song Huang

发明人： Wai-Kin Li ,  Wu-Song Huang

IPC分类号： H01L21/20

CPC分类号： H01L21/31144 ,  H01L21/76808 ,  H01L2221/1031 ,  H01L2221/1063

摘要： Disclosed is a method for the formation of features in a damascene process. According to the method, vias are formed in a dielectric layer and then covered by a layer of high molecular weight polymer. The high molecular weight polymer covers the vias but does not enter the vias. A trench is then etched through the high molecular weight polymer and the dielectric layer. Any remaining high molecular weight polymer is then removed.

摘要翻译： 公开了一种在镶嵌工艺中形成特征的方法。 根据该方法，通孔形成在电介质层中，然后被一层高分子量聚合物覆盖。 高分子量聚合物覆盖通孔但不进入通孔。 然后通过高分子量聚合物和电介质层蚀刻沟槽。 然后除去任何剩余的高分子量聚合物。

公开(公告)号：US20080153296A1

公开(公告)日：2008-06-26

申请号：US11615272

申请日：2006-12-22

申请人： Wai-Kin Li ,  Wu-Song Huang

发明人： Wai-Kin Li ,  Wu-Song Huang

IPC分类号： H01L21/311

CPC分类号： H01L21/31144 ,  H01L21/76808 ,  H01L2221/1031 ,  H01L2221/1063

摘要： Disclosed is a method for the formation of features in a damascene process. According to the method, vias are formed in a dielectric layer and then covered by a layer of high molecular weight polymer. The high molecular weight polymer covers the vias but does not enter the vias. A trench is then etched through the high molecular weight polymer and the dielectric layer. Any remaining high molecular weight polymer is then removed.

摘要翻译： 公开了一种在镶嵌工艺中形成特征的方法。 根据该方法，通孔形成在电介质层中，然后被一层高分子量聚合物覆盖。 高分子量聚合物覆盖通孔但不进入通孔。 然后通过高分子量聚合物和电介质层蚀刻沟槽。 然后除去任何剩余的高分子量聚合物。

公开(公告)号：US20080085598A1

公开(公告)日：2008-04-10

申请号：US11538475

申请日：2006-10-04

申请人： Wai-Kin Li ,  Kuang-Jung Chen ,  Wu-Song Huang

发明人： Wai-Kin Li ,  Kuang-Jung Chen ,  Wu-Song Huang

IPC分类号： H01L21/467

CPC分类号： H01L21/31144 ,  G03F1/70 ,  G03F7/203

摘要： A method forms a blocking mask first and then patterns a contact hole mask over the blocking mask to provide a method of patterning contact holes in a substrate. This method first forms a blocking layer on the substrate and then patterns the blocking layer to have first openings to form the blocking mask. Next, the method forms the contact hole layer on the substrate and the blocking mask, and patterns the contact hole layer to have regularly spaced second openings to form the contact hole mask. The patterning of the contact hole layer does not affect the blocking mask and the contact hole mask is aligned directly over the blocking mask. Then, the substrate is patterned through the first openings and the second openings such that the substrate is patterned only where the first openings and the second openings align with each other. Thus, the blocking mask controls which of the regularly spaced second openings will transfer into the substrate.

摘要翻译： 一种方法首先形成阻挡掩模，然后在阻挡掩模上对接触孔掩模进行图案化，以提供在衬底中图形化接触孔的方法。 该方法首先在衬底上形成阻挡层，然后将阻挡层图案化以具有第一开口以形成阻挡掩模。 接下来，该方法在基板和阻挡掩模上形成接触孔层，并且使接触孔层图案具有规则间隔开的第二开口以形成接触孔掩模。 接触孔层的图案化不影响阻挡掩模，并且接触孔掩模直接对准阻挡掩模。 然后，通过第一开口和第二开口图案化衬底，使得仅在第一开口和第二开口彼此对准的情况下衬底被图案化。 因此，阻挡掩模控制规则间隔开的第二开口中的哪一个将传递到衬底中。

公开(公告)号：US20120178027A1

公开(公告)日：2012-07-12

申请号：US13418421

申请日：2012-03-13

申请人： Kuang-Jung Chen ,  Wu-Song Huang ,  Ranee Wai-Ling Kwong ,  Sen Liu ,  Pushkara R. Varanasi

发明人： Kuang-Jung Chen ,  Wu-Song Huang ,  Ranee Wai-Ling Kwong ,  Sen Liu ,  Pushkara R. Varanasi

IPC分类号： G03F7/20

CPC分类号： G03F7/038 ,  G03F7/0045 ,  G03F7/0382 ,  G03F7/0392 ,  G03F7/095 ,  G03F7/20 ,  G03F7/2022 ,  G03F7/30 ,  G03F7/38 ,  G03F7/70466 ,  Y10S430/12

摘要： A method. The method forms a film of photoresist composition on a substrate and exposes a first and second region of the film to radiation through a first and second mask having a first and second image pattern, respectively. The photoresist composition includes a polymer including labile group(s), base soluble group(s), a photosensitive acid generator, and a photosensitive base generator. The photosensitive acid generator generates first and second amounts of acid upon exposure to first and second doses of radiation, respectively. The second amount of acid exceeds the first amount of acid. The second dose of radiation exceeds the first dose of radiation. The photosensitive base generator generates a first and second amount of base upon exposure to the first and second dose of radiation, respectively. The first amount of base exceeds the first amount of acid. The second amount of acid exceeds the second amount of base.

摘要翻译： 一个方法。 该方法在衬底上形成光致抗蚀剂组合物的膜，并分别通过具有第一和第二图像图案的第一和第二掩模使膜的第一和第二区域暴露于辐射。 光致抗蚀剂组合物包括包含不稳定基团，碱溶性基团，光敏酸发生剂和感光基底发生剂的聚合物。 感光酸发生器分别在暴露于第一和第二剂量的辐射时产生第一和第二量的酸。 第二量的酸超过第一量的酸。 第二剂辐射超过第一剂量的辐射。 光敏底物发生器分别在暴露于第一和第二剂量的辐射时产生第一和第二量的碱。 碱的第一量超过第一量的酸。 第二量的酸超过第二量的碱。

公开(公告)号：US20100178619A1

公开(公告)日：2010-07-15

申请号：US12354247

申请日：2009-01-15

申请人： Wu-Song Huang ,  Gregory R. McIntyre

发明人： Wu-Song Huang ,  Gregory R. McIntyre

IPC分类号： G03F7/20

CPC分类号： G03F7/2022 ,  G03F7/095 ,  G03F7/26

摘要： The present invention relates to photolithography methods for enhancing lithographic imaging of isolated and semi-isolated features. A first layer of a first photoresist is formed over a substrate. A second layer of a second photoresist is formed over the first layer. The second photoresist includes a polymer containing an absorbing moiety. The second layer is exposed through a first patterned mask and developed to form a first relief image. The first relief image and the first layer are exposed through a second patterned mask. One of the first and the second patterned masks includes a dense pattern, while the other includes an isolated or a semi-isolated pattern. The first relief image and base soluble regions of the first layer are removed to form a second relief image with an isolated or a semi-isolated pattern. The second layer can also be bleachable upon exposure and bake in the present invention.

摘要翻译： 本发明涉及用于增强孤立和半隔离特征的光刻成像的光刻方法。 在衬底上形成第一光致抗蚀剂的第一层。 在第一层上形成第二光致抗蚀剂层。 第二光致抗蚀剂包括含有吸收部分的聚合物。 第二层通过第一图案化掩模曝光并显影以形成第一浮雕图像。 第一浮雕图像和第一层通过第二图案掩模曝光。 第一和第二图案化掩模中的一个包括密集图案，而另一个包括隔离或半隔离图案。 去除第一层的第一浮雕图像和底部可溶区域以形成具有隔离或半隔离图案的第二浮雕图像。 第二层也可以在本发明中曝光和烘烤时可漂白。

公开(公告)号：US07608390B2

公开(公告)日：2009-10-27

申请号：US11462527

申请日：2006-08-04

申请人： Mahmoud Khojasteh ,  Wu-Song Huang ,  Margaret C. Lawson ,  Kaushal S. Patel ,  Irene Popova ,  Pushkara R. Varanasi

发明人： Mahmoud Khojasteh ,  Wu-Song Huang ,  Margaret C. Lawson ,  Kaushal S. Patel ,  Irene Popova ,  Pushkara R. Varanasi

IPC分类号： G03F7/40 ,  G03F7/11

CPC分类号： G03F7/091 ,  G03F7/0046 ,  Y10S438/952

摘要： The present invention discloses a composition suitable for use as a top antireflective coating and barrier layer for immersion lithography. The inventive composition is soluble in aqueous base solutions and insoluble in water. The inventive composition comprises a polymer having at least one hydrophobic moiety, at least one acidic moiety with a pKa of 1 or less, and at least one aqueous base soluble moiety. The present invention also discloses a method of forming a patterned layer on a substrate by using the inventive composition in lithography.

摘要翻译： 本发明公开了一种适合用作浸没式光刻的顶部抗反射涂层和阻挡层的组合物。 本发明的组合物可溶于碱性水溶液并且不溶于水。 本发明的组合物包含具有至少一个疏水部分，至少一个pKa为1或更小的酸性部分和至少一种碱可溶性部分的聚合物。 本发明还公开了通过在光刻中使用本发明的组合物在衬底上形成图案化层的方法。