公开(公告)号：US20100178619A1

公开(公告)日：2010-07-15

申请号：US12354247

申请日：2009-01-15

申请人： Wu-Song Huang ,  Gregory R. McIntyre

发明人： Wu-Song Huang ,  Gregory R. McIntyre

IPC分类号： G03F7/20

CPC分类号： G03F7/2022 ,  G03F7/095 ,  G03F7/26

摘要： The present invention relates to photolithography methods for enhancing lithographic imaging of isolated and semi-isolated features. A first layer of a first photoresist is formed over a substrate. A second layer of a second photoresist is formed over the first layer. The second photoresist includes a polymer containing an absorbing moiety. The second layer is exposed through a first patterned mask and developed to form a first relief image. The first relief image and the first layer are exposed through a second patterned mask. One of the first and the second patterned masks includes a dense pattern, while the other includes an isolated or a semi-isolated pattern. The first relief image and base soluble regions of the first layer are removed to form a second relief image with an isolated or a semi-isolated pattern. The second layer can also be bleachable upon exposure and bake in the present invention.

摘要翻译： 本发明涉及用于增强孤立和半隔离特征的光刻成像的光刻方法。 在衬底上形成第一光致抗蚀剂的第一层。 在第一层上形成第二光致抗蚀剂层。 第二光致抗蚀剂包括含有吸收部分的聚合物。 第二层通过第一图案化掩模曝光并显影以形成第一浮雕图像。 第一浮雕图像和第一层通过第二图案掩模曝光。 第一和第二图案化掩模中的一个包括密集图案，而另一个包括隔离或半隔离图案。 去除第一层的第一浮雕图像和底部可溶区域以形成具有隔离或半隔离图案的第二浮雕图像。 第二层也可以在本发明中曝光和烘烤时可漂白。

公开(公告)号：US08546069B2

公开(公告)日：2013-10-01

申请号：US12354247

申请日：2009-01-15

申请人： Wu-Song Huang ,  Gregory R. McIntyre

发明人： Wu-Song Huang ,  Gregory R. McIntyre

IPC分类号： G03F7/40

CPC分类号： G03F7/2022 ,  G03F7/095 ,  G03F7/26

摘要： The present invention relates to photolithography methods for enhancing lithographic imaging of isolated and semi-isolated features. A first layer of a first photoresist is formed over a substrate. A second layer of a second photoresist is formed over the first layer. The second photoresist includes a polymer containing an absorbing moiety. The second layer is exposed through a first patterned mask and developed to form a first relief image. The first relief image and the first layer are exposed through a second patterned mask. One of the first and the second patterned masks includes a dense pattern, while the other includes an isolated or a semi-isolated pattern. The first relief image and base soluble regions of the first layer are removed to form a second relief image with an isolated or a semi-isolated pattern. The second layer can also be bleachable upon exposure and bake in the present invention.

摘要翻译： 本发明涉及用于增强孤立和半隔离特征的光刻成像的光刻方法。 在衬底上形成第一光致抗蚀剂的第一层。 在第一层上形成第二光致抗蚀剂层。 第二光致抗蚀剂包括含有吸收部分的聚合物。 第二层通过第一图案化掩模曝光并显影以形成第一浮雕图像。 第一浮雕图像和第一层通过第二图案掩模曝光。 第一和第二图案化掩模中的一个包括密集图案，而另一个包括隔离或半隔离图案。 去除第一层的第一浮雕图像和底部可溶区域以形成具有隔离或半隔离图案的第二浮雕图像。 第二层也可以在本发明中曝光和烘烤时可漂白。

公开(公告)号：US08846295B2

公开(公告)日：2014-09-30

申请号：US13457735

申请日：2012-04-27

申请人： Kuang-Jung Chen ,  Wu-Song Huang ,  Wai-Kin Li

发明人： Kuang-Jung Chen ,  Wu-Song Huang ,  Wai-Kin Li

IPC分类号： G03F7/038 ,  G03F7/021

CPC分类号： G03F7/0382 ,  G03F7/021 ,  G03F7/0397 ,  G03F7/20 ,  G03F7/325

摘要： The present invention relates to a photoresist composition capable of negative development and a pattern forming method using the photoresist composition. The photoresist composition includes an imaging polymer, a crosslinking agent and a radiation sensitive acid generator. The imaging polymer includes a monomeric unit having an acid-labile moiety-substituted hydroxyl group. The patterning forming method utilizes an organic solvent developer to selectively remove an unexposed region of a photoresist layer of the photoresist composition to form a patterned structure in the photoresist layer. The photoresist composition and the pattern forming method are especially useful for forming material patterns on a semiconductor substrate using 193 nm (ArF) lithography.

摘要翻译： 本发明涉及能够显影的光致抗蚀剂组合物和使用光致抗蚀剂组合物的图案形成方法。 光致抗蚀剂组合物包括成像聚合物，交联剂和辐射敏感的酸发生剂。 成像聚合物包括具有酸不稳定部分取代的羟基的单体单元。 图案形成方法利用有机溶剂显影剂选择性地除去光致抗蚀剂组合物的光致抗蚀剂层的未曝光区域，以在光致抗蚀剂层中形成图案化结构。 光致抗蚀剂组合物和图案形成方法对于使用193nm（ArF）光刻在半导体衬底上形成材料图案特别有用。

公开(公告)号：US08293451B2

公开(公告)日：2012-10-23

申请号：US12543003

申请日：2009-08-18

申请人： Martin Glodde ,  Dario L. Goldfarb ,  Wu-Song Huang ,  Wai-Kin Li ,  Sen Liu ,  Pushkara R. Varanasi ,  Libor Vyklicky

发明人： Martin Glodde ,  Dario L. Goldfarb ,  Wu-Song Huang ,  Wai-Kin Li ,  Sen Liu ,  Pushkara R. Varanasi ,  Libor Vyklicky

IPC分类号： G03F7/00 ,  G03F7/004 ,  G03F7/028

CPC分类号： G03F7/091 ,  G03F9/7026

摘要： A curable liquid formulation containing at least (i) one or more near-infrared absorbing triphenylamine-based dyes, and (ii) one or more casting solvents. The invention is also directed to solid near-infrared absorbing films composed of crosslinked forms of the curable liquid formulation. The invention is also directed to a microelectronic substrate containing a coating of the solid near-infrared absorbing film as well as a method for patterning a photoresist layer coated on a microelectronic substrate in the case where the near-infrared absorbing film is between the microelectronic substrate and a photoresist film.

摘要翻译： 包含至少（i）一种或多种近红外吸收性三苯胺类染料的可固化液体制剂，和（ii）一种或多种浇铸溶剂。 本发明还涉及由可固化液体制剂的交联形式组成的固体近红外吸收膜。 本发明还涉及一种含有固体近红外线吸收膜的涂层的微电子衬底，以及在近红外吸收膜位于微电子衬底之间的情况下，用于图案化涂覆在微电子衬底上的光刻胶层的方法 和光刻胶膜。

公开(公告)号：US20120178027A1

公开(公告)日：2012-07-12

申请号：US13418421

申请日：2012-03-13

申请人： Kuang-Jung Chen ,  Wu-Song Huang ,  Ranee Wai-Ling Kwong ,  Sen Liu ,  Pushkara R. Varanasi

发明人： Kuang-Jung Chen ,  Wu-Song Huang ,  Ranee Wai-Ling Kwong ,  Sen Liu ,  Pushkara R. Varanasi

IPC分类号： G03F7/20

CPC分类号： G03F7/038 ,  G03F7/0045 ,  G03F7/0382 ,  G03F7/0392 ,  G03F7/095 ,  G03F7/20 ,  G03F7/2022 ,  G03F7/30 ,  G03F7/38 ,  G03F7/70466 ,  Y10S430/12

摘要： A method. The method forms a film of photoresist composition on a substrate and exposes a first and second region of the film to radiation through a first and second mask having a first and second image pattern, respectively. The photoresist composition includes a polymer including labile group(s), base soluble group(s), a photosensitive acid generator, and a photosensitive base generator. The photosensitive acid generator generates first and second amounts of acid upon exposure to first and second doses of radiation, respectively. The second amount of acid exceeds the first amount of acid. The second dose of radiation exceeds the first dose of radiation. The photosensitive base generator generates a first and second amount of base upon exposure to the first and second dose of radiation, respectively. The first amount of base exceeds the first amount of acid. The second amount of acid exceeds the second amount of base.

摘要翻译： 一个方法。 该方法在衬底上形成光致抗蚀剂组合物的膜，并分别通过具有第一和第二图像图案的第一和第二掩模使膜的第一和第二区域暴露于辐射。 光致抗蚀剂组合物包括包含不稳定基团，碱溶性基团，光敏酸发生剂和感光基底发生剂的聚合物。 感光酸发生器分别在暴露于第一和第二剂量的辐射时产生第一和第二量的酸。 第二量的酸超过第一量的酸。 第二剂辐射超过第一剂量的辐射。 光敏底物发生器分别在暴露于第一和第二剂量的辐射时产生第一和第二量的碱。 碱的第一量超过第一量的酸。 第二量的酸超过第二量的碱。

公开(公告)号：US20120156450A1

公开(公告)日：2012-06-21

申请号：US13406965

申请日：2012-02-28

申请人： Wu-Song Huang ,  Wai-kin Li ,  Ping-Chuan Wang

发明人： Wu-Song Huang ,  Wai-kin Li ,  Ping-Chuan Wang

IPC分类号： B32B3/00

CPC分类号： G03F7/70466 ,  Y10S438/947 ,  Y10S438/948 ,  Y10T428/24802

摘要： A stack of a second photoresist having a second photosensitivity and a first photoresist having a first photosensitivity, which is greater than second photosensitivity, is formed on a substrate. A first pattern is formed in the first photoresist by a first exposure and a first development, while the second photoresist underneath remains intact. A second pattern comprising an array of lines is formed in the second photoresist. An exposed portion of the second photoresist underneath a remaining portion of the first photoresist forms a narrow portion of a line pattern, while an exposed portion of the second photoresist outside the area of the remaining portions of the photoresist forms a wide portion of the line pattern. Each wide portion of the line pattern forms a bulge in the second pattern, which increases overlay tolerance between the second pattern and the pattern of conductive vias.

摘要翻译： 在基板上形成具有第二感光性的第二光致抗蚀剂的叠层和具有大于第二光敏性的第一光敏性的第一光致抗蚀剂。 通过第一曝光和第一显影在第一光致抗蚀剂中形成第一图案，而下面的第二光致抗蚀剂保持完整。 在第二光致抗蚀剂中形成包括线阵列的第二图案。 在第一光致抗蚀剂的剩余部分下面的第二光致抗蚀剂的暴露部分形成线图案的窄部分，而在光致抗蚀剂的剩余部分的区域外的第二光致抗蚀剂的暴露部分形成线图案的宽部分 。 线图案的每个宽部分在第二图案中形成凸起，这增加了第二图案和导电通孔图案之间的覆盖公差。

公开(公告)号：US07608390B2

公开(公告)日：2009-10-27

申请号：US11462527

申请日：2006-08-04

申请人： Mahmoud Khojasteh ,  Wu-Song Huang ,  Margaret C. Lawson ,  Kaushal S. Patel ,  Irene Popova ,  Pushkara R. Varanasi

发明人： Mahmoud Khojasteh ,  Wu-Song Huang ,  Margaret C. Lawson ,  Kaushal S. Patel ,  Irene Popova ,  Pushkara R. Varanasi

IPC分类号： G03F7/40 ,  G03F7/11

CPC分类号： G03F7/091 ,  G03F7/0046 ,  Y10S438/952

摘要： The present invention discloses a composition suitable for use as a top antireflective coating and barrier layer for immersion lithography. The inventive composition is soluble in aqueous base solutions and insoluble in water. The inventive composition comprises a polymer having at least one hydrophobic moiety, at least one acidic moiety with a pKa of 1 or less, and at least one aqueous base soluble moiety. The present invention also discloses a method of forming a patterned layer on a substrate by using the inventive composition in lithography.

摘要翻译： 本发明公开了一种适合用作浸没式光刻的顶部抗反射涂层和阻挡层的组合物。 本发明的组合物可溶于碱性水溶液并且不溶于水。 本发明的组合物包含具有至少一个疏水部分，至少一个pKa为1或更小的酸性部分和至少一种碱可溶性部分的聚合物。 本发明还公开了通过在光刻中使用本发明的组合物在衬底上形成图案化层的方法。

公开(公告)号：US20090155715A1

公开(公告)日：2009-06-18

申请号：US12356187

申请日：2009-01-20

申请人： Kuang-Jung Chen ,  Wu-Song Huang ,  Wai-Kin Li ,  Pushkara Rao Varanasi ,  Sen Liu

发明人： Kuang-Jung Chen ,  Wu-Song Huang ,  Wai-Kin Li ,  Pushkara Rao Varanasi ,  Sen Liu

IPC分类号： G03F7/20 ,  G03F7/004

CPC分类号： G03F7/0045 ,  G03F7/0035 ,  G03F7/0397 ,  G03F7/40

摘要： A method and a resist composition. The resist composition includes a polymer having repeating units having a lactone moiety, a thermal base generator capable of generating a base and a photosensitive acid generator. The polymer has the properties of being substantially soluble in a first solvent and becoming substantially insoluble after heating the polymer. The method includes forming a film of a photoresist including a polymer, a thermal base generator capable of releasing a base, a photosensitive acid generator, and a solvent. The film is patternwise imaged. The imaging includes exposing the film to radiation, resulting in producing an acid catalyst. The film is developed in an aqueous base, resulting in removing base-soluble regions and forming a patterned layer. The patterned layer is baked above the temperature, resulting in the thermal base generator releasing a base within the patterned layer and the patterned layer becoming insoluble in the solvent.

摘要翻译： 一种方法和抗蚀剂组合物。 抗蚀剂组合物包括具有内酯部分的重复单元的聚合物，能够产生碱的热碱发生剂和感光酸产生剂。 聚合物具有基本上可溶于第一溶剂的性质，并且在加热聚合物之后变得基本上不溶。 该方法包括形成包含聚合物的光致抗蚀剂膜，能够释放碱的热碱发生器，光敏酸产生剂和溶剂。 该影片被图案化成像。 成像包括将膜暴露于辐射，导致产生酸催化剂。 该膜在水性碱中显影，导致去除碱溶性区域并形成图案层。 图案化层被烘烤高于该温度，导致热基发生器释放图案化层内的基底并且图案化层变得不溶于溶剂。

公开(公告)号：US20060134547A1

公开(公告)日：2006-06-22

申请号：US11195566

申请日：2005-08-02

申请人： Wu-Song Huang ,  Sean Burns ,  Mahmoud Khojasteh

发明人： Wu-Song Huang ,  Sean Burns ,  Mahmoud Khojasteh

IPC分类号： G03C1/76

CPC分类号： G03F7/091 ,  G03F7/094 ,  Y10S438/952

摘要： A new underlayer composition that exhibits high etch resistance and improved optical properties is disclosed. The underlayer composition comprises a vinyl or acrylate polymer, such as a methacrylate polymer, the polymer comprising at least one substituted or unsubstituted naphthalene or naphthol moiety, including mixtures thereof. Examples of the polymer of this invention include: where each R1 is independently selected from an organic moiety or a halogen; each A is independently a single bond or an organic moiety; R2 is hydrogen or a methyl group; and each X, Y and Z is an integer of 0 to 7, and Y+Z is 7 or less. The organic moiety mentioned above may be a substituted or unsubstituted hydrocarbon selected from the group consisting of a linear or branched alkyl, halogenated linear or branched alkyl, aryl, halogenated aryl, cyclic alkyl, and halogenated cyclic alkyl, and any combination thereof. The compositions are suitable for use as a planarizing underlayer in a multilayer lithographic process, including a trilayer lithographic process.

公开(公告)号：US20060134546A1

公开(公告)日：2006-06-22

申请号：US11013971

申请日：2004-12-16

申请人： Wu-Song Huang ,  Sean Burns ,  Mahmoud Khojasteh

发明人： Wu-Song Huang ,  Sean Burns ,  Mahmoud Khojasteh

IPC分类号： G03C1/76

CPC分类号： G03F7/091 ,  G03F7/094 ,  Y10S438/952

摘要： A new underlayer composition that exhibits high etch resistance and improved optical properties is disclosed. The underlayer composition comprises a vinyl or acrylate polymer, such as a methacrylate polymer, the polymer comprising at least one substituted or unsubstituted naphthalene or naphthol moiety, including mixtures thereof. Examples of the polymer of this invention include: where each R1 is independently selected from an organic moiety or a halogen; each A is independently a single bond or an organic moiety; R2 is hydrogen or a methyl group; and each X, Y and Z is an integer of 0 to 7, and Y+Z is 7 or less. The organic moiety mentioned above may be a substituted or unsubstituted hydrocarbon selected from the group consisting of a linear or branched alkyl, halogenated linear or branched alkyl, aryl, halogenated aryl, cyclic alkyl, and halogenated cyclic alkyl, and any combination thereof. The compositions are suitable for use as a planarizing underlayer in a multilayer lithographic process, including a trilayer lithographic process.

摘要翻译： 公开了具有高耐蚀刻性和改善的光学性能的新型底层组合物。 底层组合物包含乙烯基或丙烯酸酯聚合物，例如甲基丙烯酸酯聚合物，该聚合物包含至少一个取代或未取代的萘或萘酚部分，包括其混合物。 本发明的聚合物的实例包括：其中每个R 1独立地选自有机部分或卤素; 每个A独立地是单键或有机部分; R 2是氢或甲基; X，Y，Z为0〜7的整数，Y + Z为7以下。 上述有机部分可以是选自直链或支链烷基，卤代直链或支链烷基，芳基，卤代芳基，环状烷基和卤代环状烷基的取代或未取代的烃及其任何组合。 该组合物适合用作多层光刻工艺中的平坦化底层，包括三层光刻工艺。