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公开(公告)号：US20120178027A1
公开(公告)日：2012-07-12
申请号：US13418421
申请日：2012-03-13
IPC分类号： G03F7/20
CPC分类号： G03F7/038 , G03F7/0045 , G03F7/0382 , G03F7/0392 , G03F7/095 , G03F7/20 , G03F7/2022 , G03F7/30 , G03F7/38 , G03F7/70466 , Y10S430/12
摘要： A method. The method forms a film of photoresist composition on a substrate and exposes a first and second region of the film to radiation through a first and second mask having a first and second image pattern, respectively. The photoresist composition includes a polymer including labile group(s), base soluble group(s), a photosensitive acid generator, and a photosensitive base generator. The photosensitive acid generator generates first and second amounts of acid upon exposure to first and second doses of radiation, respectively. The second amount of acid exceeds the first amount of acid. The second dose of radiation exceeds the first dose of radiation. The photosensitive base generator generates a first and second amount of base upon exposure to the first and second dose of radiation, respectively. The first amount of base exceeds the first amount of acid. The second amount of acid exceeds the second amount of base.
摘要翻译： 一个方法。 该方法在衬底上形成光致抗蚀剂组合物的膜，并分别通过具有第一和第二图像图案的第一和第二掩模使膜的第一和第二区域暴露于辐射。 光致抗蚀剂组合物包括包含不稳定基团，碱溶性基团，光敏酸发生剂和感光基底发生剂的聚合物。 感光酸发生器分别在暴露于第一和第二剂量的辐射时产生第一和第二量的酸。 第二量的酸超过第一量的酸。 第二剂辐射超过第一剂量的辐射。 光敏底物发生器分别在暴露于第一和第二剂量的辐射时产生第一和第二量的碱。 碱的第一量超过第一量的酸。 第二量的酸超过第二量的碱。
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2.发明授权公开(公告)号：US08236476B2
公开(公告)日：2012-08-07
申请号：US11970761
申请日：2008-01-08
CPC分类号： G03F7/038 , G03F7/0045 , G03F7/0382 , G03F7/0392 , G03F7/095 , G03F7/20 , G03F7/2022 , G03F7/30 , G03F7/38 , G03F7/70466 , Y10S430/12
摘要： A method and a composition are provided. The composition includes a polymer and a photosensitive acid generator capable of generating a first amount of acid upon exposure to a first dose of radiation and a second amount of acid upon exposure to a second dose of radiation. The second amount of acid is greater than said first amount of acid. The second dose is greater than the first dose. The composition includes a photosensitive base generator capable of generating a first amount of base upon exposure to the first dose and a second amount of base upon exposure to the second dose, where the first amount of base is greater than the first amount of acid and the second amount of base is less than the second amount of acid. A method for exposing to radiation a film of a photoresist on a substrate is included.
摘要翻译： 提供了一种方法和组合物。 组合物包括聚合物和感光酸产生剂，其能够在暴露于第一剂量的辐射时产生第一量的酸，并且在暴露于第二剂量的辐射时能够产生第二量的酸。 第二量的酸大于所述第一量的酸。 第二剂量大于第一剂量。 所述组合物包括能够在暴露于第一剂量时产生第一量碱的光敏碱产生剂，以及暴露于第二剂量时第二量的碱，其中第一量的碱大于第一量的酸， 碱的第二量少于第二量的酸。 包括用于在基板上暴露于光致抗蚀剂的膜的方法。
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公开(公告)号：US08846296B2
公开(公告)日：2014-09-30
申请号：US13461960
申请日：2012-05-02
CPC分类号： G03F7/038 , G03F7/0045 , G03F7/0382 , G03F7/0392 , G03F7/095 , G03F7/20 , G03F7/2022 , G03F7/30 , G03F7/38 , G03F7/70466 , Y10S430/12
摘要： A composition is provided. The composition includes a polymer and a photosensitive acid generator capable of generating a first amount of acid upon exposure to a first dose of radiation and a second amount of acid upon exposure to a second dose of radiation. The second amount of acid is greater than the first amount of acid. The second dose is greater than the first dose. The composition includes a photosensitive base generator capable of generating a first amount of base upon exposure to the first dose and a second amount of base upon exposure to the second dose, where the first amount of base is greater than the first amount of acid and the second amount of base is less than the second amount of acid. The photosensitive base generator may include benzoin carbamates, O-carbamoylhydroxylamines, O-carbamoyloximes, aromatic sulfonamides, α-lactones, N-(2-Arylethenyl)amides, azides, amides, oximines, quaternary ammonium salts, or amineimides.
摘要翻译： 提供了组合物。 组合物包括聚合物和感光酸产生剂，其能够在暴露于第一剂量的辐射时产生第一量的酸，并且在暴露于第二剂量的辐射时能够产生第二量的酸。 第二量的酸大于第一量的酸。 第二剂量大于第一剂量。 所述组合物包括能够在暴露于第一剂量时产生第一量碱的光敏碱产生剂，以及暴露于第二剂量时第二量的碱，其中第一量的碱大于第一量的酸， 碱的第二量少于第二量的酸。 光敏基底产生剂可以包括安息香氨基甲酸酯，O-氨基甲酰羟基胺，O-氨基甲酰肟，芳族磺酰胺，α-内酯，N-（2-亚乙烯基）酰胺，叠氮化物，酰胺，肟，季铵盐或胺酰胺。
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公开(公告)号：US08568960B2
公开(公告)日：2013-10-29
申请号：US13418421
申请日：2012-03-13
CPC分类号： G03F7/038 , G03F7/0045 , G03F7/0382 , G03F7/0392 , G03F7/095 , G03F7/20 , G03F7/2022 , G03F7/30 , G03F7/38 , G03F7/70466 , Y10S430/12
摘要： A method that forms a film of photoresist composition on a substrate and exposes a first and second region of the film to radiation through a first and second mask having a first and second image pattern, respectively. The photoresist composition includes a polymer including labile group(s), base soluble group(s), a photosensitive acid generator, and a photosensitive base generator. The photosensitive acid generator generates first and second amounts of acid upon exposure to first and second doses of radiation, respectively. The second amount of acid exceeds the first amount of acid. The second dose of radiation exceeds the first dose of radiation. The photosensitive base generator generates a first and second amount of base upon exposure to the first and second dose of radiation, respectively. The first amount of base exceeds the first amount of acid. The second amount of acid exceeds the second amount of base.
摘要翻译： 一种在衬底上形成光致抗蚀剂组合物的膜并将膜的第一和第二区分别暴露于具有第一和第二图像图案的第一和第二掩模的辐射的方法。 光致抗蚀剂组合物包括包含不稳定基团，碱溶性基团，光敏酸发生剂和感光基底发生剂的聚合物。 感光酸发生器分别在暴露于第一和第二剂量的辐射时产生第一和第二量的酸。 第二量的酸超过第一量的酸。 第二剂辐射超过第一剂量的辐射。 光敏底物发生器分别在暴露于第一和第二剂量的辐射时产生第一和第二量的碱。 碱的第一量超过第一量的酸。 第二量的酸超过第二量的碱。
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公开(公告)号：US20120214099A1
公开(公告)日：2012-08-23
申请号：US13461960
申请日：2012-05-02
CPC分类号： G03F7/038 , G03F7/0045 , G03F7/0382 , G03F7/0392 , G03F7/095 , G03F7/20 , G03F7/2022 , G03F7/30 , G03F7/38 , G03F7/70466 , Y10S430/12
摘要： A composition. The composition includes a polymer and a photosensitive acid generator capable of generating a first amount of acid upon exposure to a first dose of radiation and a second amount of acid upon exposure to a second dose of radiation. The second amount of acid is greater than the first amount of acid. The second dose is greater than the first dose. The composition includes a photosensitive base generator capable of generating a first amount of base upon exposure to the first dose and a second amount of base upon exposure to the second dose, where the first amount of base is greater than the first amount of acid and the second amount of base is less than the second amount of acid. The photosensitive base generator may include benzoin carbamates, O-carbamoylhydroxylamines, O-carbamoyloximes, aromatic sulfonamides, α-lactones, N-(2-Arylethenyl)amides, azides, amides, oximines, quaternary ammonium salts, or amineimides.
摘要翻译： 一个组成 组合物包括聚合物和感光酸产生剂，其能够在暴露于第一剂量的辐射时产生第一量的酸，并且在暴露于第二剂量的辐射时能够产生第二量的酸。 第二量的酸大于第一量的酸。 第二剂量大于第一剂量。 所述组合物包括能够在暴露于第一剂量时产生第一量碱的光敏碱产生剂，以及暴露于第二剂量时第二量的碱，其中第一量的碱大于第一量的酸， 碱的第二量少于第二量的酸。 光敏碱产生剂可以包括安息香氨基甲酸酯，O-氨基甲酰羟基胺，O-氨基甲酰肟，芳族磺酰胺，α-内酯，N-（2-羟乙基）酰胺，叠氮化物，酰胺，肟，季铵盐或胺酰胺。
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公开(公告)号：US20090176174A1
公开(公告)日：2009-07-09
申请号：US11970761
申请日：2008-01-08
CPC分类号： G03F7/038 , G03F7/0045 , G03F7/0382 , G03F7/0392 , G03F7/095 , G03F7/20 , G03F7/2022 , G03F7/30 , G03F7/38 , G03F7/70466 , Y10S430/12
摘要： A method and a composition. The composition includes a polymer and a photosensitive acid generator capable of generating a first amount of acid upon exposure to a first dose of radiation and a second amount of acid upon exposure to a second dose of radiation. The second amount of acid is greater than said first amount of acid. The second dose is greater than the first dose. The composition includes a photosensitive base generator capable of generating a first amount of base upon exposure to the first dose and a second amount of base upon exposure to the second dose, where the first amount of base is greater than the first amount of acid and the second amount of base is less than the second amount of acid. A method for exposing to radiation a film of a photoresist on a substrate is included.
摘要翻译： 方法和组成。 组合物包括聚合物和感光酸产生剂，其能够在暴露于第一剂量的辐射时产生第一量的酸，并且在暴露于第二剂量的辐射时能够产生第二量的酸。 第二量的酸大于所述第一量的酸。 第二剂量大于第一剂量。 所述组合物包括能够在暴露于第一剂量时产生第一量碱的光敏碱产生剂，以及暴露于第二剂量时第二量的碱，其中第一量的碱大于第一量的酸， 碱的第二量少于第二量的酸。 包括用于在基板上暴露于光致抗蚀剂的膜的方法。
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公开(公告)号：US08021828B2
公开(公告)日：2011-09-20
申请号：US12034971
申请日：2008-02-21
IPC分类号： G03F7/26
CPC分类号： G03F7/095 , G03F7/0392 , G03F7/0397
摘要： A structure and a photolithography method. The method includes forming a first layer of a first photoresist including a first polymer and a first photosensitive acid generator. A second layer of a second photoresist, including a second polymer having at least one phenyl or phenolic moiety, is formed directly onto the first layer. The second layer is patternwise imaged, resulting in exposing at least one first portion. The first portion is removed, revealing at least one first region of the first layer. A second portion of the second layer remains forming a structure having opaque regions. The structure and first region are exposed. The opaque regions shield from radiation at least one second region of the first layer, resulting in producing acid in the first region and in the structure. The structure and base-soluble regions of the first layer are removed. A structure is also described.
摘要翻译： 一种结构和光刻法。 该方法包括形成包含第一聚合物和第一光敏酸发生剂的第一光致抗蚀剂的第一层。 包括具有至少一个苯基或酚部分的第二聚合物的第二光致抗蚀剂层直接形成在第一层上。 第二层被图案化成像，导致暴露至少一个第一部分。 去除第一部分，露出第一层的至少一个第一区域。 第二层的第二部分保持形成具有不透明区域的结构。 结构和第一区域被暴露。 不透明区域从第一层的至少一个第二区域的辐射屏蔽，导致在第一区域和结构中产生酸。 去除第一层的结构和碱溶性区域。 还描述了一种结构。
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公开(公告)号：US20090214981A1
公开(公告)日：2009-08-27
申请号：US12035009
申请日：2008-02-21
CPC分类号： G03F7/095 , G03F7/039 , G03F7/0397 , G03F7/091 , Y10S430/106 , Y10S430/108 , Y10S430/111 , Y10S430/115
摘要： Photolithography compositions and methods. A first layer of a first photoresist is formed on a substrate. A second layer of a second photoresist is formed directly onto the first layer. The second polymer of the second photoresist includes an absorbing moiety. The second layer is patternwise imaged and developed, resulting in removal of base-soluble regions. A relief pattern from the second layer remains. The relief pattern and the first layer are exposed to a second dose of the radiation. The polymer in the relief pattern absorbs a portion of the second dose. A fraction of the second dose passes through the at least one region of the relief pattern and exposes at least one region of the first layer. The relief pattern and base-soluble regions of the first layer are removed. A relief pattern from the first layer remains. A second photolithography method and a photoresist composition are also included.
摘要翻译： 光刻组合物和方法。 在基板上形成第一光致抗蚀剂的第一层。 第二层第二光致抗蚀剂直接形成在第一层上。 第二光致抗蚀剂的第二聚合物包括吸收部分。 第二层是图案成像和显影，导致去除碱溶性区域。 仍然存在来自第二层的浮雕图案。 浮雕图案和第一层暴露于第二剂量的辐射。 浮雕图案中的聚合物吸收第二剂量的一部分。 第二剂量的一部分通过浮雕图案的至少一个区域并暴露第一层的至少一个区域。 去除第一层的浮雕图案和碱溶性区域。 仍然存在第一层的浮雕图案。 还包括第二光刻方法和光致抗蚀剂组合物。
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公开(公告)号：US20090214959A1
公开(公告)日：2009-08-27
申请号：US12034971
申请日：2008-02-21
CPC分类号： G03F7/095 , G03F7/0392 , G03F7/0397
摘要： A structure and a photolithography method. The method includes forming a first layer of a first photoresist including a first polymer and a first photosensitive acid generator. A second layer of a second photoresist, including a second polymer having at least one phenyl or phenolic moiety, is formed directly onto the first layer. The second layer is patternwise imaged, resulting in exposing at least one first portion. The first portion is removed, revealing at least one first region of the first layer. A second portion of the second layer remains forming a structure having opaque regions. The structure and first region are exposed. The opaque regions shield from radiation at least one second region of the first layer, resulting in producing acid in the first region and in the structure. The structure and base-soluble regions of the first layer are removed. A structure is also described.
摘要翻译： 一种结构和光刻法。 该方法包括形成包含第一聚合物和第一光敏酸发生剂的第一光致抗蚀剂的第一层。 包括具有至少一个苯基或酚部分的第二聚合物的第二光致抗蚀剂层直接形成在第一层上。 第二层被图案化成像，导致暴露至少一个第一部分。 去除第一部分，露出第一层的至少一个第一区域。 第二层的第二部分保持形成具有不透明区域的结构。 结构和第一区域被暴露。 不透明区域从第一层的至少一个第二区域的辐射屏蔽，导致在第一区域和结构中产生酸。 去除第一层的结构和碱溶性区域。 还描述了一种结构。
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公开(公告)号：US08053172B2
公开(公告)日：2011-11-08
申请号：US12035009
申请日：2008-02-21
CPC分类号： G03F7/095 , G03F7/039 , G03F7/0397 , G03F7/091 , Y10S430/106 , Y10S430/108 , Y10S430/111 , Y10S430/115
摘要： Photolithography compositions and methods. A first layer of a first photoresist is formed on a substrate. A second layer of a second photoresist is formed directly onto the first layer. The second polymer of the second photoresist includes an absorbing moiety. The second layer is patternwise imaged and developed, resulting in removal of base-soluble regions. A relief pattern from the second layer remains. The relief pattern and the first layer are exposed to a second dose of the radiation. The polymer in the relief pattern absorbs a portion of the second dose. A fraction of the second dose passes through the at least one region of the relief pattern and exposes at least one region of the first layer. The relief pattern and base-soluble regions of the first layer are removed. A relief pattern from the first layer remains. A second photolithography method and a photoresist composition are also included.
摘要翻译： 光刻组合物和方法。 在基板上形成第一光致抗蚀剂的第一层。 第二层第二光致抗蚀剂直接形成在第一层上。 第二光致抗蚀剂的第二聚合物包括吸收部分。 第二层是图案成像和显影，导致去除碱溶性区域。 仍然存在来自第二层的浮雕图案。 浮雕图案和第一层暴露于第二剂量的辐射。 浮雕图案中的聚合物吸收第二剂量的一部分。 第二剂量的一部分通过浮雕图案的至少一个区域并暴露第一层的至少一个区域。 去除第一层的浮雕图案和碱溶性区域。 仍然存在第一层的浮雕图案。 还包括第二光刻方法和光致抗蚀剂组合物。
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