公开(公告)号：US20100177694A1

公开(公告)日：2010-07-15

申请号：US12614091

申请日：2009-11-06

Applicant: Hua-Lung YANG ,  Chien-Min Lee ,  Ren-Jr Chen

Inventor： Hua-Lung YANG ,  Chien-Min Lee ,  Ren-Jr Chen

IPC: H04W40/00

CPC classification number: H04W74/0833 ,  H04L5/0053

Abstract: A method for a user equipment to transmit uplink control information to a base station, the base station being configured to receive uplink control information on a plurality of groups of subcarriers. The method includes: randomly determining one of the groups of subcarriers; and transmitting uplink control information on the randomly determined group of subcarriers.

Abstract translation: 一种用于将用户设备向基站发送上行链路控制信息的方法，所述基站被配置为在多个子载波组上接收上行链路控制信息。 该方法包括：随机确定子载波组中的一个; 以及对随机确定的子载波组发送上行链路控制信息。

公开(公告)号：US20100140583A1

公开(公告)日：2010-06-10

申请号：US12547744

申请日：2009-08-26

Applicant: Wei-Su Chen ,  Yi-Chan Chen ,  Wen-Han Wang ,  Hong-Hui Hsu ,  Chien-Min Lee ,  Yen Chuo ,  Te-Sheng Chao ,  Min-Hung Lee

Inventor： Wei-Su Chen ,  Yi-Chan Chen ,  Wen-Han Wang ,  Hong-Hui Hsu ,  Chien-Min Lee ,  Yen Chuo ,  Te-Sheng Chao ,  Min-Hung Lee

IPC: H01L45/00

CPC classification number: H01L45/06 ,  H01L45/122 ,  H01L45/126 ,  H01L45/144 ,  H01L45/16

Abstract: A phase change memory device and fabricating method are provided. A disk-shaped phase change layer is buried within the insulating material. A center via and ring via are formed by a lithography. The center via is located in the center of the phase change layer and passes through the phase change layer, and the ring via takes the center via as a center. A heating electrode within the center via performs Joule heating of the phase change layer, and the contact area between the phase change layer and the heating electrode is reduced by controlling the thickness of the phase change layer. Furthermore, a second electrode within the ring via dissipates the heat transmitted to the contact interface between the phase change layers, so as to avoid transmitting the heat to the etching boundary at the periphery of the phase change layer.

Abstract translation: 提供了一种相变存储器件及其制造方法。 盘状相变层被埋在绝缘材料内。 通过光刻形成中心通孔和环形通孔。 中心通孔位于相变层的中心，通过相变层，环形通孔以中心通孔为中心。 中心通孔内的加热电极进行相变层的焦耳加热，通过控制相变层的厚度来降低相变层与加热电极之间的接触面积。 此外，环通孔内的第二电极耗散了传递到相变层之间的接触界面的热量，以避免将热量传递到相变层周围的蚀刻边界。

公开(公告)号：US20100133495A1

公开(公告)日：2010-06-03

申请号：US12552826

申请日：2009-09-02

Applicant: Chien-Min Lee ,  Ming-Jeng Huang ,  Jen-Chi Chuang ,  Jia-Yo Lin ,  Min-Chih Wang

Inventor： Chien-Min Lee ,  Ming-Jeng Huang ,  Jen-Chi Chuang ,  Jia-Yo Lin ,  Min-Chih Wang

IPC: H01L47/00

CPC classification number: H01L45/06 ,  H01L45/1233 ,  H01L45/126 ,  H01L45/144 ,  H01L45/16

Abstract: A phase change memory device is provided, including a substrate, a first dielectric layer disposed over the substrate, a first electrode disposed in the first dielectric layer, a second dielectric layer formed over the first dielectric layer, covering the first electrode, a heating electrode disposed in the second dielectric layer, contacting the first electrode, a phase change material layer disposed over the second dielectric layer, contacting the heating electrode, and a second electrode disposed over the phase change material layer. In one embodiment, the heating electrode includes a first portion contacting the first electrode and a second portion contacting the phase change material layer, and the second portion of the heating electrode includes metal silicides and the first portion of the heating electrode includes no metal silicides.

Abstract translation: 提供一种相变存储器件，包括：衬底，设置在衬底上的第一电介质层，设置在第一电介质层中的第一电极，形成在第一电介质层上的第二电介质层，覆盖第一电极;加热电极 设置在所述第二电介质层中，与所述第一电极接触，设置在所述第二电介质层上方的与所述加热电极接触的相变材料层和设置在所述相变材料层上的第二电极。 在一个实施例中，加热电极包括接触第一电极的第一部分和与相变材料层接触的第二部分，加热电极的第二部分包括金属硅化物，加热电极的第一部分不包括金属硅化物。

公开(公告)号：US07598113B2

公开(公告)日：2009-10-06

申请号：US11479497

申请日：2006-06-30

Applicant: Wei-Su Chen ,  Yi-Chan Chen ,  Wen-Han Wang ,  Hong-Hui Hsu ,  Chien-Min Lee ,  Yen Chuo ,  Te-Sheng Chao ,  Min-Hung Lee

Inventor： Wei-Su Chen ,  Yi-Chan Chen ,  Wen-Han Wang ,  Hong-Hui Hsu ,  Chien-Min Lee ,  Yen Chuo ,  Te-Sheng Chao ,  Min-Hung Lee

IPC: H01L21/00 ,  H01L45/00

CPC classification number: H01L45/06 ,  H01L45/122 ,  H01L45/126 ,  H01L45/144 ,  H01L45/16

Abstract: A phase change memory device and fabricating method are provided. A disk-shaped phase change layer is buried within the insulating material. A center via and ring via are formed by a lithography. The center via is located in the center of the phase change layer and passes through the phase change layer, and the ring via takes the center via as a center. A heating electrode within the center via performs Joule heating of the phase change layer, and the contact area between the phase change layer and the heating electrode is reduced by controlling the thickness of the phase change layer. Furthermore, a second electrode within the ring via dissipates the heat transmitted to the contact interface between the phase change layers, so as to avoid transmitting the heat to the etching boundary at the periphery of the phase change layer.

Abstract translation: 提供了一种相变存储器件及其制造方法。 盘状相变层被埋在绝缘材料内。 通过光刻形成中心通孔和环形通孔。 中心通孔位于相变层的中心，通过相变层，环形通孔以中心通孔为中心。 中心通孔内的加热电极进行相变层的焦耳加热，通过控制相变层的厚度来降低相变层与加热电极之间的接触面积。 此外，环通孔内的第二电极耗散了传递到相变层之间的接触界面的热量，以避免将热量传递到相变层周围的蚀刻边界。

公开(公告)号：US20070138595A1

公开(公告)日：2007-06-21

申请号：US11493595

申请日：2006-07-27

Applicant: Hong-Hui Hsu ,  Chien-Min Lee ,  Wen-Han Wang ,  Min-Hong Lee ,  Te-Sheng Chao ,  Yen Chuo ,  Yi-Chan Chen ,  Wei-Su Chen

Inventor： Hong-Hui Hsu ,  Chien-Min Lee ,  Wen-Han Wang ,  Min-Hong Lee ,  Te-Sheng Chao ,  Yen Chuo ,  Yi-Chan Chen ,  Wei-Su Chen

IPC: H01L29/00 ,  H01L21/00

CPC classification number: H01L45/1675 ,  G11C2213/52 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/126 ,  H01L45/144

Abstract: A phase change memory (PCM) cell and fabricating method thereof are provided. A phase change layer is etched into a tapered structure, and then a dielectric layer on the phase change layer is planarized, until a tip of the tapered structure is exposed for contacting a heating electrode. Therefore, when the area of the exposed tip of the phase change layer is controlled to be of an extremely small size, the contact area between the phase change layer and the heating electrode is reduced; thereby the operation current is lowered.

Abstract translation: 提供了相变存储器（PCM）单元及其制造方法。 将相变层蚀刻成锥形结构，然后将相变层上的电介质层平坦化，直到锥形结构的尖端暴露以接触加热电极。 因此，当相变层的露出端部的面积被控制在非常小的尺寸时，相变层和加热电极之间的接触面积减小; 从而操作电流降低。

公开(公告)号：US08891466B2

公开(公告)日：2014-11-18

申请号：US13400135

申请日：2012-02-20

Applicant: Chia-Wen Hsieh ,  Chien-Min Lee

Inventor： Chia-Wen Hsieh ,  Chien-Min Lee

IPC: H04W72/04 ,  H04L1/18 ,  H04L5/00

CPC classification number: H04L5/0044 ,  H04L1/1812 ,  H04L1/1822

Abstract: A method of handling a soft buffer of a mobile device in a wireless communication system is disclosed. The mobile device is configured a plurality of component carriers (CCs) by a network of the wireless communication system. The plurality of CCs comprise a primary CC (PCC) and at least one secondary CC (SCC). The method comprises determining a plurality of weightings corresponding to the plurality of CCs according to an indication; determining a plurality of sizes of a plurality of sub-blocks according to the plurality of weightings; and dividing the soft buffer into the plurality of sub-blocks according to the plurality of sizes of the plurality of sub-blocks, to arrange a plurality of hybrid automatic repeat request (HARQ) processes of the plurality of CCs in the plurality of sub-blocks.

Abstract translation: 公开了一种在无线通信系统中处理移动设备的软缓冲器的方法。 移动设备被无线通信系统的网络配置成多个分量载波（CC）。 多个CC包括主CC（PCC）和至少一个次CC（SCC）。 该方法包括根据指示确定与多个CC对应的多个加权; 根据所述多个权重确定多个子块的多个尺寸; 以及根据所述多个子块的多个大小将所述软缓冲器划分为所述多个子块，以在所述多个子块中排列所述多个CC的多个混合自动重复请求（HARQ）处理， 块。

公开(公告)号：US08871529B2

公开(公告)日：2014-10-28

申请号：US13427875

申请日：2012-03-22

Applicant: Fu-Tai Liou ,  Chien-Min Lee ,  Chih-Chien Liang ,  Nai-Chung Fu

Inventor： Fu-Tai Liou ,  Chien-Min Lee ,  Chih-Chien Liang ,  Nai-Chung Fu

IPC: H01L21/00 ,  H01L43/12

CPC classification number: H01L43/12

Abstract: A method or manufacturing an integrated circuit structure with a magnetoresistance component is provided. A substrate is provided. A circuit structure layer including a metal pad is formed on the substrate. A dielectric layer is formed on the circuit structure. A metal damascene structure is formed in the dielectric layer. An opening is formed in the dielectric layer so as to form a step-drop. A magnetoresistance material layer is formed on the dielectric layer after forming the metal damascene structure and the opening. A photolithography process is applied to pattern the magnetoresistance material layer to form a magnetoresistance component electrically connected to the metal damascene structure.

Abstract translation: 提供了一种制造具有磁阻部件的集成电路结构的方法或制造方法。 提供基板。 在基板上形成包括金属焊盘的电路结构层。 在电路结构上形成介电层。 在电介质层中形成金属镶嵌结构。 在电介质层中形成开口以便形成分步骤。 在形成金属镶嵌结构和开口之后，在电介质层上形成磁阻材料层。 应用光刻工艺以对磁阻材料层进行图案化以形成电连接到金属镶嵌结构的磁阻组件。

公开(公告)号：US20120275397A1

公开(公告)日：2012-11-01

申请号：US13400135

申请日：2012-02-20

Applicant: Chia-Wen Hsieh ,  Chien-Min Lee

Inventor： Chia-Wen Hsieh ,  Chien-Min Lee

IPC: H04W72/04

CPC classification number: H04L5/0044 ,  H04L1/1812 ,  H04L1/1822

Abstract: A method of handling a soft buffer of a mobile device in a wireless communication system is disclosed. The mobile device is configured a plurality of component carriers (CCs) by a network of the wireless communication system. The plurality of CCs comprise a primary CC (PCC) and at least one secondary CC (SCC). The method comprises determining a plurality of weightings corresponding to the plurality of CCs according to an indication; determining a plurality of sizes of a plurality of sub-blocks according to the plurality of weightings; and dividing the soft buffer into the plurality of sub-blocks according to the plurality of sizes of the plurality of sub-blocks, to arrange a plurality of hybrid automatic repeat request (HARQ) processes of the plurality of CCs in the plurality of sub-blocks.

Abstract translation: 公开了一种在无线通信系统中处理移动设备的软缓冲器的方法。 移动设备被无线通信系统的网络配置成多个分量载波（CC）。 多个CC包括主CC（PCC）和至少一个次CC（SCC）。 该方法包括根据指示确定与多个CC对应的多个权重; 根据所述多个权重确定多个子块的多个尺寸; 以及根据所述多个子块的多个大小将所述软缓冲器划分为所述多个子块，以在所述多个子块中排列所述多个CC的多个混合自动重复请求（HARQ）处理， 块。

公开(公告)号：US08071970B2

公开(公告)日：2011-12-06

申请号：US12328745

申请日：2008-12-04

Applicant: Chien-Min Lee

Inventor： Chien-Min Lee

IPC: H01L47/00

CPC classification number: H01L45/1675 ,  H01L27/2436 ,  H01L27/2463 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/126 ,  H01L45/144

Abstract: A phase change memory device comprising an electrode, a phase change layer crossing and contacting the electrode at a cross region thereof, and a transistor comprising a source and a drain, wherein the drain of the transistor electrically connects the electrode or the phase change layer is disclosed.

Abstract translation: 一种相变存储器件，包括电极，在其交叉区域交叉并接触电极的相变层和包括源极和漏极的晶体管，其中晶体管的漏极电连接电极或相变层是 披露

公开(公告)号：US07906774B2

公开(公告)日：2011-03-15

申请号：US12189087

申请日：2008-08-08

Applicant: Tsung-Shune Chin ,  Chin-Fu Kao ,  Ming-Jinn Tsai ,  Chien-Min Lee

Inventor： Tsung-Shune Chin ,  Chin-Fu Kao ,  Ming-Jinn Tsai ,  Chien-Min Lee

IPC: H01L47/00 ,  G11C11/00

CPC classification number: H01L45/06 ,  H01L45/1233 ,  H01L45/144 ,  H01L45/1625

Abstract: A phase change memory device is disclosed, including a substrate, a phase change layer over the substrate, a first electrode electrically connecting a first side of the phase change layer, a second electrode electrically connecting a second side of the phase change layer, wherein the phase change layer composes mainly of gallium (Ga), antimony (Sb) and tellurium (Te) and unavoidable impurities, having the composition range of GaxTeySbz, 5

Abstract translation: 公开了一种相变存储器件，包括衬底，衬底上的相变层，电连接相变层的第一侧的第一电极，电连接相变层的第二侧的第二电极，其中， 相变层主要由镓（Ga），锑（Sb）和碲（Te）和不可避免的杂质构成，其组成范围为GaxTeySbz，5