公开(公告)号：US20050205108A1

公开(公告)日：2005-09-22

申请号：US10802087

申请日：2004-03-16

Applicant: Ching-Yu Chang ,  Chin-Hsiang Lin

Inventor： Ching-Yu Chang ,  Chin-Hsiang Lin

IPC: A61N5/00 ,  B08B3/12 ,  B08B6/00 ,  B08B7/00 ,  B08B7/02 ,  G03B27/42 ,  G03F7/20 ,  G21G5/00

CPC classification number: G03F7/70341 ,  G03F7/70925

Abstract: A method and system for cleaning lens used in an immersion lithography system is disclosed. After positioning a wafer in the immersion lithography system, a light exposing operation is performed on the wafer using an objective lens immersed in a first fluid containing surfactant, wherein the surfactant reduces a likelihood for having floating defects adhere to the wafer and the objective lens.

Abstract translation: 公开了一种用于在浸没式光刻系统中使用的透镜的清洁方法和系统。 在将浸没光刻系统中的晶片定位之后，使用浸入第一流体表面活性剂中的物镜在晶片上进行曝光操作，其中表面活性剂减少浮动缺陷粘附到晶片和物镜的可能性。

公开(公告)号：US06887627B2

公开(公告)日：2005-05-03

申请号：US10132156

申请日：2002-04-26

Applicant: Henry Wei-Ming Chung ,  Chi-Yuan Hung ,  Ching-Yu Chang ,  I-Pien Wu

Inventor： Henry Wei-Ming Chung ,  Chi-Yuan Hung ,  Ching-Yu Chang ,  I-Pien Wu

IPC: G03F1/30 ,  G03F9/00

CPC classification number: G03F1/30

Abstract: A method of fabricating a phase shift mask (PSM) is described. A patterned photoresist layer is formed on an opaque layer over a transparent plate. A thin mask layer is formed on the sidewalls of the patterned photoresist layer. The exposed opaque layer and transparent plate thereunder are then removed while using the patterned photoresist layer and mask layer as a mask. A phase shift opening is formed in the transparent plate, and thereby a phase shift layer is formed at the place where the phase shift opening is located. The patterned photoresist layer and the opaque layer thereunder are then removed to expose the transparent plate. The opaque layer under the mask layer can precisely self-align the phase shift layer to prevent alignment deviation caused by multiple lithography processes. The precision of the phase shift mask can be increased, and mask manufacture cost can be lowered.

Abstract translation: 描述了制造相移掩模（PSM）的方法。 在透明板上的不透明层上形成图案化的光致抗蚀剂层。 在图案化的光致抗蚀剂层的侧壁上形成薄的掩模层。 然后在使用图案化的光致抗蚀剂层和掩模层作为掩模的同时除去其下的暴露的不透明层和透明板。 在透明板中形成相移开口，由此在相移开口所在的位置形成相移层。 然后去除图案化的光致抗蚀剂层和其下的不透明层以暴露透明板。 掩模层下面的不透明层可以精确地自对准相移层，以防止由多个光刻工艺引起的对准偏差。 可以提高相移掩模的精度，并且可以降低掩模制造成本。

公开(公告)号：US06864185B2

公开(公告)日：2005-03-08

申请号：US10643000

申请日：2003-08-18

Applicant: Ta-Hung Yang ,  Chin-Cheng Yang ,  Ching-Yu Chang

Inventor： Ta-Hung Yang ,  Chin-Cheng Yang ,  Ching-Yu Chang

IPC: G03F7/20 ,  G03F7/26 ,  H01L21/302 ,  H01L21/461

CPC classification number: G03F7/70466 ,  G03F7/203

Abstract: A method of forming a feature pattern in a photosensitive layer includes forming the photosensitive layer on a substrate, providing a first mask having a first opaque area thereon, and performing a first exposure process with a first dose to form a first unexposed image in the photosensitive layer. The method further includes performing a second exposure process with a second dose to expose sidewalls of the first unexposed image so that the sidewalls of the first unexposed image receive at least a portion of the second dose thus forming a second unexposed image in the photosensitive layer, and developing the photosensitive layer with a developing process to form the feature pattern and to create features having smaller widths than those which would result in developing the photosensitive layer of the first unexposed image.

Abstract translation: 在感光层中形成特征图案的方法包括在基底上形成感光层，提供其上具有第一不透明区域的第一掩模，并且以第一剂量进行第一曝光处理以在感光层中形成第一未曝光图像 层。 该方法还包括用第二剂量进行第二曝光处理以暴露第一未曝光图像的侧壁，使得第一未曝光图像的侧壁接收第二剂量的至少一部分，从而在感光层中形成第二未曝光图像， 并用显影工艺显影感光层以形成特征图案，并产生具有比导致显影第一未曝光图像的感光层的那些宽度小的特征。

公开(公告)号：US06861176B2

公开(公告)日：2005-03-01

申请号：US10065003

申请日：2002-09-09

Applicant: Tsung-Hsien Wu ,  Ching-Yu Chang ,  Tahorng Yang

Inventor： Tsung-Hsien Wu ,  Ching-Yu Chang ,  Tahorng Yang

IPC: G03C5/00 ,  G03F1/00 ,  G03F1/36 ,  G03F9/00 ,  H01L21/027 ,  H01L21/302 ,  H01L21/311 ,  H01L21/461 ,  H01L21/768

CPC classification number: G03F1/36 ,  H01L21/76802

Abstract: A method of forming holes in a layer through a cross-shape image exposure. The method includes removing a section from each corner of the rectangular patterns on a photomask to form cross-shape patterns so that circular or elliptical contact holes are formed on a photoresist layer after photo-exposure and development. Optical image contrast between contacts is increased by the cross-shape patterns on the photomask.

Abstract translation: 通过十字形图像曝光在层中形成孔的方法。 该方法包括从光掩模上的矩形图案的每个角落去除一部分以形成十字形图案，使得在曝光和显影之后在光致抗蚀剂层上形成圆形或椭圆形的接触孔。 通过光掩模上的交叉形状图案增加了触点之间的光学图像对比度。

公开(公告)号：US06802322B2

公开(公告)日：2004-10-12

申请号：US10063129

申请日：2002-03-25

Applicant: Ching-Yu Chang

Inventor： Ching-Yu Chang

IPC: H01L21302

CPC classification number: H01L27/11521 ,  H01L27/115

Abstract: A stringer block is formed on the interface between a HDP silicon oxide layer and a silicon substrate. During an etching process for defining the profile of a floating gate, the stringer block functions to expose a bottom corner stringer. Following that, a polysilicon etching process effectively removes the bottom corner stringer. As a result, a stringerless flash memory cell is formed to prevent leakage currents, resulting from the bottom corner stringer, and improve both the reliability and data retention ability of the device.

Abstract translation: 在HDP氧化硅层和硅衬底之间的界面上形成纵梁块。 在用于限定浮动门的轮廓的蚀刻工艺期间，纵梁块用于暴露底部拐角桁条。 之后，多晶硅蚀刻工艺有效地去除了底角拐角。 结果，形成了一个无弯曲的快闪存储单元，以防止由底角拐角引起的漏电流，并提高设备的可靠性和数据保留能力。

公开(公告)号：US06689663B1

公开(公告)日：2004-02-10

申请号：US10218101

申请日：2002-08-12

Applicant: Ching-Yu Chang ,  Ta-Horng Yang

Inventor： Ching-Yu Chang ,  Ta-Horng Yang

IPC: H01L218246

CPC classification number: H01L27/1126 ,  H01L27/112

Abstract: A method of code programming a mask read only memory (ROM) is disclosed. According to the method, a first photoresist layer is formed over word lines and a gate oxide layer of a substrate already having implanted bit lines. The first photoresist layer is patterned to develop pre-code openings over all of the memory cells, which correspond to intersecting word and bit lines. The first photoresist layer is then hardened using either a treatment implant or a treatment plasma. Subsequently, a second photoresist layer is formed over the first photoresist layer and patterned to develop real-code openings over memory cells which are actually to be coded with a logic “0” value. Each memory cell to be coded is then implanted with implants passing through the pre-code openings and the real code openings and into the memory cell.

公开(公告)号：US06547647B2

公开(公告)日：2003-04-15

申请号：US09823994

申请日：2001-04-03

Applicant: Ching-Yu Chang

Inventor： Ching-Yu Chang

IPC: B24B100

CPC classification number: H01L21/02032 ,  B24B37/042

Abstract: A method of wafer reclaim, at least includes: provide a wafer; perform a first semiconductor process to let both film layer and numerous particles are formed on the wafer; perform chemical mechanical polishing process to let part of film layer is removed and scales of part of particles are decreased; perform wet etching process to let both residual film layer and residual particles are further removed; perform cleaning process to let surface of wafer is cleaned; and perform second semiconductor process to let a semiconductor structure is formed on wafer. Furthermore, concepts of the invention that both film layer and particles are thoroughly removed by both chemical mechanical polishing process and wet etching process can be applied as a method for cleaning wafer and a method for planarizing wafer.

公开(公告)号：US06461981B1

公开(公告)日：2002-10-08

申请号：US09682340

申请日：2001-08-22

Applicant: Ching-Yu Chang

Inventor： Ching-Yu Chang

IPC: H01L2131

CPC classification number: H01L28/40 ,  H01L21/28525 ,  H01L21/32105 ,  H01L28/56 ,  H01L28/86

Abstract: A method that, using the surface-reaction mechanism of polysilicon in the chemical vapor deposition (CVD) process, starts in depositing a conformal first polysilicon layer on a uneven surface of a semiconductor wafer. The first polysilicon layer is then oxidized to a conformal first silicon oxide thin film. By repeating the previous two steps, a second polysilicon layer is formed on the surface of the first silicon oxide thin film and then oxidized to a second silicon oxide thin film with the required thickness. The conformal silicon oxide thin film formed by the method can be applied in structures of various devices in refined processes.

公开(公告)号：US06436612B1

公开(公告)日：2002-08-20

申请号：US09712916

申请日：2000-11-16

Applicant: Ching-Yu Chang

Inventor： Ching-Yu Chang

IPC: G03F730

CPC classification number: H01L27/11266 ,  H01L21/31111 ,  H01L27/112

Abstract: A method for forming a protection device with slope laterals is provided. Firstly, providing a semiconductor substrate having a plurality of alternative first sacrificial layers and second sacrificial layers formed thereon. A first etching step is performed to remove one portion of each of the first sacrificial layers and thereby expose one portion of each lateral of each of the second sacrificial layers. Subsequently, performing a second etching step to remove one portion of the lateral of the second sacrificial layer. Then, repeatedly and alternately performing the first etching step and the second etching step until completely removing the first sacrificial layers and then obtaining a plurality of protection devices formed of the second sacrificial layers each of which having slope laterals.

Abstract translation: 提供了一种用于形成具有边坡的保护装置的方法。 首先，提供具有多个替代的第一牺牲层和形成在其上的第二牺牲层的半导体衬底。 执行第一蚀刻步骤以去除每个第一牺牲层的一部分，从而暴露每个第二牺牲层的每个横向的一部分。 随后，执行第二蚀刻步骤以去除第二牺牲层的横向的一部分。 然后，重复地且交替地执行第一蚀刻步骤和第二蚀刻步骤，直到完全去除第一牺牲层，然后获得由具有斜面的第二牺牲层形成的多个保护装置。

公开(公告)号：US06300196B1

公开(公告)日：2001-10-09

申请号：US09734406

申请日：2000-12-11

Applicant: Ching-Yu Chang

Inventor： Ching-Yu Chang

IPC: H01L21336

CPC classification number: H01L28/92 ,  H01L21/28273 ,  H01L21/32139 ,  H01L29/66545

Abstract: A method of fabricating a gate is described. A first dielectric layer having a first opening is formed on a substrate. A gate dielectric layer is formed in the opening. A lower portion of a floating gate is formed on the gate dielectric layer. A source/drain region is formed in the substrate beside the lower portion of the floating gate. A conductive layer is formed on the first dielectric layer to completely fill the first opening. The conductive layer is patterned to form a second opening in the conductive layer. The second opening is above the first opening and does not expose the first dielectric layer. The second opening has a tapered sidewall and a predetermined depth. A mask layer is formed to cover the conductive layer and fill the second opening. The mask layer outside the second opening is removed to expose the conductive layer. A portion of the mask layer is removed to leave a first etching mask layer in the second opening. An anisotropic etching process using the first etching mask layer as a mask is performed to etch the conductive layer. An upper portion of the floating gate is formed. The first dielectric layer is exposed. The first etching mask is removed. Thereafter, a dielectric layer between gates and a control gate is formed over the floating gate.

Abstract translation: 描述了制造栅极的方法。 具有第一开口的第一介电层形成在基板上。 在开口中形成栅极电介质层。 浮栅的下部形成在栅介质层上。 源极/漏极区域形成在浮置栅极的下部旁边的衬底中。 在第一电介质层上形成导电层以完全填充第一开口。 将导电层图案化以在导电层中形成第二开口。 第二开口位于第一开口的上方，并且不暴露第一电介质层。 第二开口具有锥形侧壁和预定深度。 形成掩模层以覆盖导电层并填充第二开口。 除去第二开口外面的掩模层以露出导电层。 去除掩模层的一部分以在第二开口中留下第一蚀刻掩模层。 执行使用第一蚀刻掩模层作为掩模的各向异性蚀刻工艺来蚀刻导电层。 形成浮栅的上部。 第一介电层被暴露。 第一蚀刻掩模被去除。 此后，在浮栅之间形成栅极和控制栅极之间的电介质层。