-
公开(公告)号:US20130106532A1
公开(公告)日:2013-05-02
申请号:US13282642
申请日:2011-10-27
Applicant: Jun-De JIN , Tzu-Jin Yeh
Inventor: Jun-De JIN , Tzu-Jin Yeh
IPC: H03H7/075
CPC classification number: H03H7/075 , H03H7/1758
Abstract: A band-pass filter includes an input node coupled to receive an oscillating input signal, an output node, and a first LC resonator coupled to a first node coupled between the input node and the output node and to a first power supply node coupled to provide a first voltage. The first LC resonator includes a first capacitor, and a first inductor coupled in series with the first capacitor. The output node is coupled to output a filtered response signal that includes at least one zero based on the oscillating input signal and the first LC resonator.
Abstract translation: 带通滤波器包括耦合以接收振荡输入信号的输入节点,输出节点和耦合到耦合在输入节点和输出节点之间的第一节点的第一LC谐振器和耦合到第一电源节点的第一电源节点, 第一电压。 第一LC谐振器包括第一电容器和与第一电容器串联耦合的第一电感器。 输出节点被耦合以输出基于振荡输入信号和第一LC谐振器包括至少一个零的滤波响应信号。
-
42.
公开(公告)号:US08193880B2
公开(公告)日:2012-06-05
申请号:US12023184
申请日:2008-01-31
Applicant: Shu-Ying Cho , Tzu-Jin Yeh , Sally Liu
Inventor: Shu-Ying Cho , Tzu-Jin Yeh , Sally Liu
CPC classification number: H01P3/003 , H01P3/06 , H05K1/0219 , H05K1/0242 , H05K1/025 , H05K2201/09236 , H05K2201/09727 , H05K2201/09781
Abstract: A semiconductor device for transmitting a radio frequency signal along a signal line includes a signal line that extends along a principal axis. On one side of the signal line is a first dielectric, and on the opposite side of the signal line is a second dielectric. First and second ground lines are proximate to the first and second dielectrics, respectively, and the ground lines are approximately parallel to the signal line. The device has a transverse cross-section that varies along the principal axis.
Abstract translation: 沿着信号线发送射频信号的半导体装置包括沿主轴延伸的信号线。 在信号线的一侧是第一电介质,信号线的相对侧是第二电介质。 第一和第二接地线分别靠近第一和第二电介质,并且接地线近似平行于信号线。 该装置具有沿主轴变化的横截面。
-
43.
公开(公告)号:US07954080B2
公开(公告)日:2011-05-31
申请号:US12042606
申请日:2008-03-05
Applicant: Hsiao-Tsung Yen , Tzu-Jin Yeh , Sally Liu
Inventor: Hsiao-Tsung Yen , Tzu-Jin Yeh , Sally Liu
IPC: G06F17/50
CPC classification number: G01R31/2884 , H01L22/34
Abstract: A method and system for de-embedding an on-wafer device is disclosed. The method comprises representing the intrinsic characteristics of a test structure using a set of ABCD matrix components; determining the intrinsic characteristics arising from the test structure; and using the determined intrinsic characteristics of the test structure to produce a set of parameters representative of the intrinsic characteristics of a device-under-test (“DUT”).
Abstract translation: 公开了一种用于去嵌入晶片装置的方法和系统。 该方法包括使用一组ABCD矩阵分量表示测试结构的固有特性; 确定测试结构产生的内在特性; 并且使用确定的测试结构的固有特性来产生表示待测器件(“DUT”)的固有特性的一组参数。
-
公开(公告)号:US06989578B2
公开(公告)日:2006-01-24
申请号:US10632456
申请日:2003-07-31
Applicant: Tzu-Jin Yeh , Hsien-Chang Wu , Ming-Ta Yang , Yu-Tai Chia
Inventor: Tzu-Jin Yeh , Hsien-Chang Wu , Ming-Ta Yang , Yu-Tai Chia
IPC: H01L29/41
Abstract: An inductor in an integrated circuit comprises a conductive trace disposed over an insulating layer which overlies a semiconductor substrate of a first conductivity type and at least two deep wells of opposite conductivity type in the substrate underneath the track. In another embodiment, an inductor in an integrated circuit comprises a conductive trace disposed over an insulating layer which overlies a semiconductor substrate of a first conductivity type; a shallow trench isolation region formed in the substrate underneath the trace; and at least two deep wells of opposite conductivity type in the substrate underneath the shallow trench isolation region. The present invention also includes methods of manufacturing the aforementioned inductors.
Abstract translation: 集成电路中的电感器包括布置在绝缘层上的导电迹线,绝缘层覆盖在轨道下方的衬底中的第一导电类型的半导体衬底和相反导电类型的至少两个深阱。 在另一个实施例中,集成电路中的电感器包括布置在绝缘层上的导电迹线,绝缘层覆盖在第一导电类型的半导体衬底上; 在轨迹下方的衬底中形成的浅沟槽隔离区域; 以及在浅沟槽隔离区域下方的衬底中具有相反导电类型的至少两个深阱。 本发明还包括制造上述电感器的方法。
-
-
-