公开(公告)号：US20150079522A1

公开(公告)日：2015-03-19

申请号：US14549164

申请日：2014-11-20

Applicant: FUJIFILM Corporation

Inventor： Hideaki TSUBAKI ,  Shinichi KANNA

IPC: G03F7/30 ,  G03F7/20

CPC classification number: G03F7/325 ,  G03F7/038 ,  G03F7/039 ,  G03F7/0392 ,  G03F7/0397 ,  G03F7/16 ,  G03F7/2002 ,  G03F7/2024 ,  G03F7/30 ,  G03F7/32 ,  G03F7/40 ,  Y10T428/24802

Abstract: A pattern forming method, including: (A) coating a substrate with a positive resist composition of which solubility in a positive developer increases and solubility in a negative developer decreases upon irradiation with actinic rays or radiation, so as to form a resist film; (B) exposing the resist film; and (D) developing the resist film with a negative developer; a positive resist composition for multiple development used in the method; a developer for use in the method; and a rinsing solution for negative development used in the method.

Abstract translation: 一种图案形成方法，包括：（A）用正性显影剂中的溶解度增加的正性抗蚀剂组合物涂覆基材，并且在用光化学辐射或辐射照射时，在负极显影剂中的溶解度降低，以形成抗蚀剂膜; （B）曝光抗蚀膜; 和（D）用负极显影剂显影抗蚀膜; 该方法中使用的用于多重显影的正性抗蚀剂组合物; 用于该方法的开发人员; 以及用于该方法的负显影用冲洗液。

公开(公告)号：US20150017576A1

公开(公告)日：2015-01-15

申请号：US14499708

申请日：2014-09-29

Applicant: FUJIFILM Corporation

Inventor： Naoki INOUE ,  Hiroo TAKIZAWA ,  Hideaki TSUBAKI

IPC: G03F7/38 ,  G03F7/038 ,  G03F7/20

CPC classification number: G03F7/38 ,  B82Y10/00 ,  B82Y40/00 ,  C08F220/28 ,  G03F7/0002 ,  G03F7/0045 ,  G03F7/0046 ,  G03F7/0388 ,  G03F7/0392 ,  G03F7/0397 ,  G03F7/2002 ,  G03F7/325

Abstract: There is provided a pattern forming method comprising, in order: (i) a step of forming a film by using an extreme ultraviolet-sensitive resin composition containing (A) a resin having an acid-decomposable group; (ii) a step of exposing the film by using an extreme ultraviolet ray; (iii) a step of heating the film; and (iv) a step of developing the film to form a pattern, wherein in the step (ii), an optical image formed by exposure on the surface of the film is an optical image having a line part with a line width of 20 nm or less as an exposed area or an unexposed area, and, the heating temperature TPEB(° C.) in the step (iii) satisfies the specific formula.

Abstract translation: 提供了一种图案形成方法，其包括以下步骤：（i）通过使用包含（A）具有酸可分解基团的树脂的极紫外线敏感性树脂组合物形成膜的步骤; （ii）通过使用极紫外线曝光胶片的步骤; （iii）加热薄膜的步骤; 和（iv）显影该膜以形成图案的步骤，其中在步骤（ii）中，通过在膜的表面上曝光形成的光学图像是具有线宽为20nm的线部分的光学图像 或更少的曝光区域或未曝光区域，并且步骤（iii）中的加热温度TPEB（℃）满足具体公式。

公开(公告)号：US20140349223A1

公开(公告)日：2014-11-27

申请号：US14451814

申请日：2014-08-05

Applicant: FUJIFILM CORPORATION

Inventor： Takeshi KAWABATA ,  Hideaki TSUBAKI ,  Hiroo TAKIZAWA

IPC: G03F7/027 ,  G03F7/20 ,  G03F7/038

CPC classification number: G03F7/027 ,  C08K5/42 ,  G03F7/0045 ,  G03F7/0046 ,  G03F7/0388 ,  G03F7/0392 ,  G03F7/0397 ,  G03F7/11 ,  G03F7/20 ,  G03F7/2041 ,  G03F7/2059

Abstract: Provided is an actinic-ray- or radiation-sensitive resin composition including a compound that when exposed to actinic rays or radiation, generates any of acids of general formula (I) below.

Abstract translation: 本发明提供一种光化学射线或辐射敏感性树脂组合物，其包括当暴露于光化射线或辐射时产生下列通式（I）的任何酸的化合物。

公开(公告)号：US20140272692A1

公开(公告)日：2014-09-18

申请号：US14289718

申请日：2014-05-29

Applicant: FUJIFILM Corporation

Inventor： Natsumi YOKOKAWA ,  Takeshi KAWABATA ,  Hiroo TAKIZAWA ,  Hideaki TSUBAKI ,  Shuji HIRANO

IPC: G03F7/038

CPC classification number: G03F7/0388 ,  C08F8/00 ,  C08F212/00 ,  C08F222/10 ,  C09D125/18 ,  G03F7/0045 ,  G03F7/0046 ,  G03F7/039 ,  G03F7/0392 ,  G03F7/0397

Abstract: There is provided an actinic ray-sensitive or radiation-sensitive composition comprising (P) a compound having a phenolic hydroxyl group and a group formed by substituting for the hydrogen atom in a phenolic hydroxyl group by a group represented by the specific formula, a resist film formed using the specific actinic ray-sensitive or radiation-sensitive composition, a pattern forming method containing steps of exposing and developing the resist film, a manufacturing method of an electronic device, containing the pattern forming method, and an electronic device manufactured by the specific manufacturing method of an electronic device.

Abstract translation: 提供了光化射线敏感或辐射敏感性组合物，其包含（P）具有酚羟基的化合物和通过用特定式表示的基团取代酚羟基中的氢原子形成的基团，抗蚀剂 使用特定的光化射线敏感或辐射敏感组合物形成的膜，包含曝光和显影抗蚀剂膜的步骤的图案形成方法，包含图案形成方法的电子器件的制造方法和由 电子设备的具体制造方法。

公开(公告)号：US20140212797A1

公开(公告)日：2014-07-31

申请号：US14228486

申请日：2014-03-28

Applicant: FUJIFILM CORPORATION

Inventor： Takeshi KAWABATA ,  Hideaki TSUBAKI

IPC: C08F28/06 ,  C08F28/02 ,  G03F7/038

CPC classification number: C08F28/06 ,  C08F8/10 ,  C08F28/02 ,  C08F212/14 ,  G03F7/0045 ,  G03F7/0046 ,  G03F7/0388 ,  G03F7/0392 ,  G03F7/0397 ,  C08F212/32

Abstract: An actinic ray-sensitive or radiation-sensitive resin composition includes: (P) a resin that contains (A) a repeating unit capable of decomposing upon irradiation with an actinic ray or radiation to generate an acid in a side chain of the resin (P) and (C) a repeating unit represented by the following formula (I) as defined in the specification, wherein a polydispersity of the resin (P) is 1.20 or less.

Abstract translation: 光化射线敏感或辐射敏感性树脂组合物包括：（P）含有（A）能够在光化学射线或辐射照射下分解以在树脂的侧链中产生酸的重复单元的树脂（P） ）和（C）由说明书中定义的下式（I）表示的重复单元，其中树脂（P）的多分散性为1.20以下。

公开(公告)号：US20130236837A1

公开(公告)日：2013-09-12

申请号：US13852641

申请日：2013-03-28

Applicant: FUJIFILM CORPORATION

Inventor： Soichiro HONDA ,  Tadashi OMATSU ,  Hideaki TSUBAKI

IPC: G03F7/20 ,  G03F7/26

CPC classification number: G03F7/20 ,  G03F7/0392 ,  G03F7/0751 ,  G03F7/0752 ,  G03F7/16 ,  G03F7/26 ,  G11B5/855

Abstract: Collapse of resist patterns in the formation of resist patterns that employ chemically amplified resist material is suppressed. A method for forming a resist pattern includes the steps of: coating a substrate with a chemically amplified resist material; exposing the resist material; and developing the exposed resist material, to form a resist pattern having an aspect ratio AR of 1.5 or greater in a resist film formed by the resist material. A close contact process that improves close contact properties between the substrate and the resist film is controlled such that the thickness of residual film of the resist film is greater than or equal to 1 nm and less than or equal to 1.83·AR+1.73 nm.

Abstract translation: 抑制了使用化学放大抗蚀剂材料的抗蚀剂图案的形成中的抗蚀剂图案的崩溃。 形成抗蚀剂图案的方法包括以下步骤：用化学放大的抗蚀剂材料涂覆基材; 曝光抗蚀材料; 并使曝光的抗蚀剂材料显影，以形成抗蚀剂材料形成的抗蚀剂膜中的纵横比AR为1.5以上的抗蚀剂图案。 控制提高基板和抗蚀剂膜之间的紧密接触性能的紧密接触处理，使得抗蚀剂膜的残留膜的厚度大于或等于1nm且小于或等于1.83A·AR + 1.73nm。