Abstract:
A photosensitive resin composition is also provided that includes a polymer precursor selected from a polyimide precursor and a polybenzoxazole precursor; a photo-radical polymerization initiator; and a solvent, in which an acid value of an acid group contained in the polymer precursor and having a neutralization point in a pH range of 7.0 to 12.0 is in a range of 2.5 to 34.0 mgKOH/g, and either the polymer precursor contains a radically polymerizable group or the photosensitive resin composition includes a radically polymerizable compound other than the polymer precursor.
Abstract:
Provided is a resin capable of yielding a cured film with less warp and good uniformity, and of yielding a cured film (pattern) with less scum; a composition using the resin; a cured film; and a method for manufacturing a cured film and a semiconductor device. The resin is selected from polyimide precursor, polyimide, polybenzoxazole precursor, and, polybenzoxazole, and has a polymerizable group, and has a total content of a component with a molecular weight of 1,000 or smaller of 0.005 to 1.0% by mass.
Abstract:
A first object of the present invention is to provide an active light ray sensitive or radioactive ray sensitive resin composition having excellent sensitivity and forming a pattern with excellent resolution. A second object of the present invention is to provide a resist film, a pattern-forming method, and a method for manufacturing an electronic device relating to the active light ray sensitive or radioactive ray sensitive resin composition. The active light ray sensitive or radioactive ray sensitive resin composition of the present invention includes a metal compound, a resin having a main chain that is decomposed by irradiation with an X-ray, an electron beam, or an extreme ultraviolet ray, and a solvent, wherein the metal compound includes one or more metal compounds selected from the group consisting of a metal complex, an organic metal salt, and an organic metal compound, and the resin includes a resin including a repeating unit represented by a formula (1) or a repeating unit represented by a formula (XR0).
Abstract:
Provided are photosensitive resin compositions having a wide exposure latitude, a precursor composition for providing such a photosensitive resin composition, a method for producing a precursor composition, a cured film, a method for producing a cured film; and a semiconductor device. The precursor composition is a precursor composition containing at least one kind of heterocycle-containing polymer precursor, in which the heterocycle-containing polymer precursor is selected from a polyimide precursor and a polybenzoxazole precursor; and the dispersity which is a weight-average molecular weight/a number-average molecular weight of the heterocycle-containing polymer precursor is 2.5 or more.
Abstract:
There is provided an actinic ray-sensitive or radiation-sensitive resin composition comprising: (A) a resin having a repeating unit represented by the specific formula and a group capable of decomposing by an action of an acid to produce a polar group; and an ionic compound represented by the specific formula, and a resist film comprising the actinic ray-sensitive or radiation-sensitive resin composition.
Abstract:
Provided is an actinic-ray- or radiation-sensitive resin composition including a resin (P) comprising any of repeating units (A) of general formula (I) below, each of which contains an ionic structural moiety that when exposed to actinic rays or radiation, is decomposed to thereby generate an acid in a side chain of the resin.
Abstract:
There is provided an actinic ray-sensitive or radiation-sensitive resin composition comprising (P) a resin having a repeating unit (A) represented by the specific formula (I) capable of generating an acid on the side chain of the resin upon irradiation with an actinic ray or radiation, and a resist film formed with the actinic ray-sensitive or radiation-sensitive resin composition, and a pattern forming method comprising: exposing the resist film, and developing the exposed resist film, and a method for manufacturing a semiconductor device, containing the pattern forming method, and a semiconductor device manufactured by the manufacturing method of the semiconductor device.
Abstract:
An actinic ray-sensitive or radiation-sensitive resin composition containing a compound (I) that generates an acid upon irradiation with actinic rays or radiation, the compound (I) having at least two acid anionic groups and cationic groups equal in number to the acid anionic groups. At least one of the acid anionic groups and at least one of the cationic groups are linked via covalent bonding, and at least two acid groups generated from the compound (I) upon irradiation with the actinic rays or radiation include at least two acid groups having different acid dissociation constants (pKa).
Abstract:
An actinic ray-sensitive or radiation-sensitive resin composition contains a compound (I) that generates an acid upon irradiation with actinic rays or radiation and has an ionic structure and a zwitterionic structure. A pattern forming method contains forming an actinic ray-sensitive or radiation-sensitive film on a substrate using the actinic ray-sensitive or radiation-sensitive resin composition, exposing the actinic ray-sensitive or radiation-sensitive film to light; and developing the exposed actinic ray-sensitive or radiation-sensitive film with a developer.
Abstract:
Provided is a laminate that excels in adhesion among a plurality of resin layers formed as insulating layers containing polyimide and so forth, a method for manufacturing the laminate, a semiconductor device, and, a method for manufacturing the semiconductor device. The laminate comprises a substrate, and at least two resin layers, each of the resin layers is independently brought into contact, in at least a part of the surface thereof, with other resin layer, and the layers independently has a Young's modulus exceeding 2.8 GPa and not exceeding 5.0 GPa, and, an elongation after fracture exceeding 50% and not exceeding 200%, and further has a three-dimensional radical crosslinked structure, and at least one of the resin layers contains at least either polyimide or polybenzoxazole.