公开(公告)号：US20180175299A1

公开(公告)日：2018-06-21

申请号：US15897720

申请日：2018-02-15

Applicant: FUJIFILM Corporation

Inventor： Yosuke YAMAMOTO ,  Hiroo TAKIZAWA ,  Yuta SHIGENOI ,  Fumiko TAMAKUNI ,  Takashi GOTO ,  Tetsuya WATANABE

IPC: H01L51/00 ,  C08G61/12

CPC classification number: H01L51/0036 ,  C08G61/126 ,  C08G2261/124 ,  C08G2261/1412 ,  C08G2261/1424 ,  C08G2261/148 ,  C08G2261/18 ,  C08G2261/228 ,  C08G2261/314 ,  C08G2261/3223 ,  C08G2261/3225 ,  C08G2261/3241 ,  C08G2261/3243 ,  C08G2261/3246 ,  C08G2261/92 ,  H01L29/786 ,  H01L51/0003 ,  H01L51/0043 ,  H01L51/052 ,  H01L51/0545 ,  H01L51/0558

Abstract: An object of the present invention is to provide an organic thin film transistor exhibiting high carrier mobility and a low threshold voltage and having excellent heat resistance, a method of manufacturing an organic thin film transistor, an organic semiconductor composition, an organic semiconductor film, and a method of manufacturing an organic semiconductor film. The organic thin film transistor according to the present invention includes, on a substrate, a gate electrode; an organic semiconductor layer containing an organic semiconductor compound; a gate insulating layer provided between the gate electrode and the organic semiconductor layer; and a source electrode and a drain electrode which are provided to be in contact with the organic semiconductor layer and are linked to each other via the organic semiconductor layer, in which the organic semiconductor layer is in contact with a layer containing a resin (C) or further contains the resin (C), and in which the organic semiconductor compound has a molecular weight of 2,000 or greater and has a repeating unit represented by Formula (1). D-A  (1)

公开(公告)号：US20160372662A1

公开(公告)日：2016-12-22

申请号：US15252898

申请日：2016-08-31

Applicant: FUJIFILM Corporation

Inventor： Hiroo TAKIZAWA ,  Teruki NIORI ,  Yasunori YONEKUTA ,  Syuji HIRANO

IPC: H01L51/00 ,  C08F222/20 ,  C08F220/10 ,  C08F220/14 ,  C08F220/22 ,  H01L51/05 ,  C08F212/08

CPC classification number: H01L51/004 ,  C08F212/08 ,  C08F220/10 ,  C08F220/14 ,  C08F220/22 ,  C08F222/20 ,  C08F2500/02 ,  H01L51/0003 ,  H01L51/0043 ,  H01L51/0055 ,  H01L51/0071 ,  H01L51/0073 ,  H01L51/0074 ,  H01L51/0094 ,  H01L51/052 ,  H01L51/0529 ,  H01L51/0541 ,  H01L51/0545 ,  H01L51/0558

Abstract: An organic thin-film transistor including: a gate electrode, an organic semiconductor layer, a gate insulating layer, a source electrode, and a drain electrode on a substrate, in which the organic semiconductor layer includes an organic semiconductor and a resin (C) having one or more groups selected from the group consisting of a group having fluorine atoms, a group having silicon atoms, an alkyl group having one or more carbon atoms or having two or more carbon atoms in a case of forming an alkoxycarbonyl group, a cycloalkyl group, an aralkyl group, an aryloxycarbonyl group, an aromatic ring group substituted with at least one alkyl group, and an aromatic ring group substituted with at least one cycloalkyl group; and a method for manufacturing an organic thin-film transistor including: applying a coating solution which contains the organic semiconductor and the resin (C) and causing the resin (C) to be unevenly distributed.

Abstract translation: 一种有机薄膜晶体管，包括：在有机半导体层包括有机半导体和树脂（C）的基板上的栅电极，有机半导体层，栅极绝缘层，源电极和漏电极， 具有一个或多个选自具有氟原子的基团，具有硅原子的基团，具有一个或多个碳原子的烷基或在形成烷氧基羰基的情况下具有两个或更多个碳原子的基团，环烷基 基团，芳烷基，芳氧基羰基，被至少一个烷基取代的芳环基和被至少一个环烷基取代的芳环基; 以及一种制造有机薄膜晶体管的方法，包括：涂覆含有有机半导体和树脂（C）并使树脂（C）分布不均匀的涂布溶液。

公开(公告)号：US20150147688A1

公开(公告)日：2015-05-28

申请号：US14603811

申请日：2015-01-23

Applicant: FUJIFILM Corporation

Inventor： Natsumi YOKOKAWA ,  Shuji HIRANO ,  Wataru NIHASHI ,  Hiroo TAKIZAWA

IPC: G03F7/038 ,  G03F7/30

CPC classification number: G03F7/0392 ,  G03F7/0397 ,  G03F7/325

Abstract: There is provided a pattern forming method comprising (1) a step of forming a film by using an actinic ray-sensitive or radiation-sensitive resin composition containing (P) a resin having a repeating unit represented by the specific formula, (2) a step of exposing the film by using an actinic ray or radiation, and (3) a step of developing the exposed film by using an organic solvent-containing developer to form a negative pattern, wherein the content of the repeating unit represented by the specific formula is 25 mol % or more based on all repeating units in the resin (P).

Abstract translation: 提供一种图案形成方法，其包括（1）通过使用含有（P）具有由所述具体式表示的重复单元的树脂的光化射线敏感或辐射敏感性树脂组合物形成膜的步骤，（2）a 通过使用光化射线或辐射使膜曝光的步骤，以及（3）通过使用含有机溶剂的显影剂显影曝光的薄膜以形成负图案的步骤，其中由特定式表示的重复单元的含量 基于树脂（P）中的所有重复单元为25摩尔％以上。

公开(公告)号：US20150132688A1

公开(公告)日：2015-05-14

申请号：US14605415

申请日：2015-01-26

Applicant: FUJIFILM Corporation

Inventor： Natsumi YOKOKAWA ,  Shuji HIRANO ,  Hiroo TAKIZAWA ,  Wataru NIHASHI

IPC: G03F7/038 ,  G03F7/30

CPC classification number: G03F7/0388 ,  C08F12/24 ,  C08F20/28 ,  C08F220/12 ,  C08F220/18 ,  C08F220/20 ,  C08F220/26 ,  C08F2220/285 ,  G03F7/0002 ,  G03F7/0045 ,  G03F7/038 ,  G03F7/0392 ,  G03F7/0397 ,  G03F7/30 ,  H01L21/0274

Abstract: There is provided an actinic ray-sensitive or radiation-sensitive resin composition comprising (P) a resin having (a) a repeating unit represented by the specific formula; a resist film formed using the actinic ray-sensitive or radiation-sensitive resin composition; a pattern forming method comprising (i) a step of forming a film by using the actinic ray-sensitive or radiation-sensitive resin composition, (ii) a step of exposing the film, and (iii) a step of developing the exposed film by using a developer to form a pattern; a method for manufacturing an electronic device, comprising the pattern forming method; and an electronic device manufactured by the manufacturing method of an electronic device.

Abstract translation: 提供一种光化射线敏感或辐射敏感性树脂组合物，其包含（P）具有（a）由该具体式表示的重复单元的树脂; 使用光化射线敏感性或辐射敏感性树脂组合物形成的抗蚀剂膜; 一种图案形成方法，包括（i）通过使用光化射线敏感或辐射敏感性树脂组合物形成膜的步骤，（ii）曝光所述膜的步骤，以及（iii）通过 使用开发人员形成一个模式; 一种用于制造电子装置的方法，包括图案形成方法; 以及通过电子设备的制造方法制造的电子设备。

公开(公告)号：US20150132687A1

公开(公告)日：2015-05-14

申请号：US14605264

申请日：2015-01-26

Applicant: FUJIFILM Corporation

Inventor： Shuji HIRANO ,  Natsumi YOKOKAWA ,  Hiroo TAKIZAWA ,  Wataru NIHASHI

IPC: G03F7/038 ,  G03F7/20 ,  C08F22/10 ,  G03F7/30

CPC classification number: G03F7/0388 ,  C08F22/10 ,  C08F212/14 ,  C08F220/28 ,  G03F7/0002 ,  G03F7/0392 ,  G03F7/0397 ,  G03F7/11 ,  G03F7/2002 ,  G03F7/2037 ,  G03F7/2041 ,  G03F7/30 ,  G03F7/325 ,  G03F7/38 ,  H01L21/0274 ,  C08F2220/281 ,  C08F2220/283

Abstract: There is provided an actinic ray-sensitive or radiation-sensitive resin composition comprising (P) a resin containing a repeating unit represented by the specific formula (1) and a repeating unit represented by the specific formula (A); a resist film formed using the actinic ray-sensitive or radiation-sensitive resin composition; a pattern forming method comprising (i) a step of forming a film from the actinic ray-sensitive or radiation-sensitive resin composition, (ii) a step of exposing the film, and (iii) a step of developing the exposed film by using a developer to form a pattern; a method for manufacturing an electronic device, comprising the pattern forming method, and an electronic device manufactured by the manufacturing method of an electronic device.

Abstract translation: 提供了包含（P）包含由特定式（1）表示的重复单元的树脂和由特定式（A）表示的重复单元的光化射线敏感或辐射敏感性树脂组合物。 使用光化射线敏感性或辐射敏感性树脂组合物形成的抗蚀剂膜; 一种图案形成方法，包括（i）从光化射线敏感或辐射敏感性树脂组合物形成膜的步骤，（ii）曝光所述膜的步骤，以及（iii）通过使用 开发人员形成一个模式; 一种用于制造电子设备的方法，包括图案形成方法，以及通过电子设备的制造方法制造的电子设备。

公开(公告)号：US20150004533A1

公开(公告)日：2015-01-01

申请号：US14478135

申请日：2014-09-05

Applicant: FUJIFILM Corporation

Inventor： Shuji HIRANO ,  Hiroo TAKIZAWA ,  Hideaki TSUBAKI

IPC: G03F7/027 ,  G03F7/038 ,  G03F7/20

CPC classification number: G03F7/0397 ,  C07D235/12 ,  C07D235/16 ,  C07D235/22 ,  C07D235/26 ,  C07D235/28 ,  G03F7/0045 ,  G03F7/0046 ,  G03F7/027 ,  G03F7/038 ,  G03F7/0392 ,  G03F7/09 ,  G03F7/11 ,  G03F7/2002 ,  G03F7/2041 ,  G03F7/30 ,  G03F7/322 ,  G03F7/325

Abstract: An actinic ray-sensitive or radiation-sensitive resin composition in the present invention contains a nitrogen-containing compound (N) which is represented by the following general formula (N1): wherein, in the general formula (N1), X represents a group including a hetero atom; L represents a single bond or an alkylene group; R2 represents a substituent, in the case where a plurality of R2's are present, they may be the same as or different from each other and a plurality of R2's may be bonded to each other to form a ring; R3 represents a hydrogen atom or a substituent; and n represents an integer of 0 to 4.

Abstract translation: 本发明的光化射线敏感性或辐射敏感性树脂组合物含有下述通式（N1）表示的含氮化合物（N）：其中，在通式（N1）中，X表示 包括杂原子; L表示单键或亚烷基; R2表示取代基，在存在多个R 2的情况下，它们可以相同或不同，并且多个R 2可以彼此键合形成环; R3表示氢原子或取代基; n表示0〜4的整数。

公开(公告)号：US20140212796A1

公开(公告)日：2014-07-31

申请号：US14227344

申请日：2014-03-27

Applicant: FUJIFILM CORPORATION

Inventor： Hiroo TAKIZAWA ,  Kaoru IWATO ,  Hideaki TSUBAKI

IPC: G03F7/038

CPC classification number: G03F7/0388 ,  G03F7/0045 ,  G03F7/0046 ,  G03F7/038 ,  G03F7/0392 ,  G03F7/0397 ,  G03F7/11 ,  G03F7/2041 ,  G03F7/325 ,  G03F7/405

Abstract: There is provided a pattern forming method comprising (1) a step of forming a film by using an electron beam-sensitive or extreme ultraviolet-sensitive resin composition, (2) a step of exposing the film by using an electron beam or an extreme ultraviolet ray, and (3) a step of developing the exposed film by using an organic solvent-containing developer, wherein the electron beam-sensitive or extreme ultraviolet-sensitive resin composition contains (A) a resin containing (R) a repeating unit having a structural moiety capable of decomposing upon irradiation with an electron beam or an extreme ultraviolet ray to generate an acid, and (B) a solvent.

Abstract translation: 提供了一种图案形成方法，其包括（1）通过使用电子束敏感或极紫外线敏感性树脂组合物形成膜的步骤，（2）通过使用电子束或极紫外线曝光该膜的步骤 （3）通过使用含有机溶剂的显影剂显影曝光膜的步骤，其中电子束敏感性或极紫外线敏感性树脂组合物含有（A）含有（R）重复单元的树脂，其具有 能够在用电子束或极紫外线照射时分解以产生酸的结构部分，和（B）溶剂。

公开(公告)号：US20160372663A1

公开(公告)日：2016-12-22

申请号：US15252937

申请日：2016-08-31

Applicant: FUJIFILM Corporation

Inventor： Hiroo TAKIZAWA ,  Teruki NIORI ,  Yasunori YONEKUTA ,  Hayato YOSHIDA

IPC: H01L51/00

CPC classification number: H01L51/004 ,  C07F7/081 ,  C07F7/0812 ,  H01L51/0003 ,  H01L51/0043 ,  H01L51/0055 ,  H01L51/0071 ,  H01L51/0073 ,  H01L51/0074 ,  H01L51/0094 ,  H01L51/0516 ,  H01L51/0558 ,  H01L51/0562 ,  H01L51/0566

Abstract: Provided are an organic thin-film transistor including: a gate electrode, an organic semiconductor layer, a gate insulating layer, and a source electrode and a drain electrode on a substrate, in which the organic semiconductor layer contains an organic semiconductor and a block copolymer, and the block copolymer is at least one selected from specific block copolymers such as a styrene-(meth)acrylate ester block copolymer and may be phase-separated, and a method for manufacturing an organic thin-film transistor, which includes an organic semiconductor containing a phase-separated block copolymer, including: applying a coating solution which contains an organic semiconductor and a block copolymer for film formation; and heating the obtained film so that the block copolymer is self-assembled.

Abstract translation: 提供一种有机薄膜晶体管，其包括：在基板上包括栅极，有机半导体层，栅极绝缘层以及源电极和漏电极，其中有机半导体层包含有机半导体和嵌段共聚物 ，嵌段共聚物为选自特定的嵌段共聚物如苯乙烯 - （甲基）丙烯酸酯嵌段共聚物中的至少一种，可以进行相分离，以及有机薄膜晶体管的制造方法，其包括有机半导体 含有相分离的嵌段共聚物，包括：涂布含有有机半导体的涂料溶液和用于成膜的嵌段共聚物; 加热得到的膜，使嵌段共聚物自组装。

公开(公告)号：US20160147147A1

公开(公告)日：2016-05-26

申请号：US15008945

申请日：2016-01-28

Applicant: FUJIFILM Corporation

Inventor： Shuji HIRANO ,  Hiroo TAKIZAWA

IPC: G03F7/038 ,  G03F7/30

CPC classification number: G03F7/038 ,  G03F7/0045 ,  G03F7/0046 ,  G03F7/0382 ,  G03F7/0397 ,  G03F7/30 ,  G03F7/325

Abstract: There are provided a pattern forming method which satisfies high sensitivity, high resolving power at the time of isolated line pattern formation, a good pattern shape, and high dry etching resistance at the same time, an actinic ray sensitive or radiation sensitive resin composition and a resist film which are provided thereto, a method for manufacturing an electronic device using these, and an electronic device by using a pattern forming method including step (1) of forming a film using the actinic ray sensitive or radiation sensitive resin composition containing a resin (Ab) having a repeating unit represented by the specific General Formula (Ab1), step (2) of exposing the film, and step (4) of performing development using a developer including an organic solvent after exposing and of forming a negative type pattern, in this order.

Abstract translation: 提供了一种图案形成方法，其在隔离线图案形成时满足高灵敏度，高分辨能力，良好的图案形状和高耐干蚀刻性，同时具有光化射线敏感或辐射敏感性树脂组合物和 提供给它的抗蚀剂膜，使用它们的电子器件的制造方法和使用包括使用包含树脂的光化射线敏感或辐射敏感性树脂组合物形成膜的步骤（1）的图案形成方法的电子器件（ Ab）具有由特定通式（Ab1）表示的重复单元，使膜暴露的步骤（2）;以及使用包含有机溶剂的显影剂在曝光和形成负型图案之后进行显影的步骤（4） 按此顺序

公开(公告)号：US20160048075A1

公开(公告)日：2016-02-18

申请号：US14921524

申请日：2015-10-23

Applicant: FUJIFILM Corporation

Inventor： Hiroo TAKIZAWA ,  Shuji HIRANO

IPC: G03F7/039 ,  G03F7/32 ,  G03F7/11 ,  G03F7/20

CPC classification number: G03F7/039 ,  C08F20/28 ,  C08F220/28 ,  C08F2220/283 ,  G03F7/004 ,  G03F7/0045 ,  G03F7/0046 ,  G03F7/0392 ,  G03F7/0395 ,  G03F7/0397 ,  G03F7/11 ,  G03F7/20 ,  G03F7/2004 ,  G03F7/2037 ,  G03F7/32

Abstract: There is provided a pattern forming method comprising (i) forming a film on a substrate using an actinic ray-sensitive or radiation-sensitive resin composition which contains (A) a resin which decomposes due to an action of an acid to change its solubility with respect to a developer and (C) a specific resin, (ii) forming a top coat layer using a top coat composition which contains a resin (T) on the film, (iii) exposing the film which has the top coat layer to actinic rays or radiation, and (iv) forming a pattern by developing the film which has the top coat layer after the exposing.

Abstract translation: 提供一种图案形成方法，其包括（i）使用光化射线敏感或辐射敏感性树脂组合物在基材上形成膜，所述树脂组合物含有（A）由于酸的作用而分解的树脂以改变其与 （C）特定树脂，（ii）使用在该膜上含有树脂（T）的面漆组合物形成面涂层，（iii）将具有顶涂层的膜暴露于光化反应 射线或辐射，以及（iv）通过在曝光后显影具有顶涂层的膜来形成图案。