公开(公告)号：US07601596B2

公开(公告)日：2009-10-13

申请号：US11600422

申请日：2006-11-16

申请人： Markus Zundel ,  Franz Hirler ,  Rudolf Zelsacher ,  Erwin Bacher

发明人： Markus Zundel ,  Franz Hirler ,  Rudolf Zelsacher ,  Erwin Bacher

IPC分类号： H01L21/336

CPC分类号： H01L29/7813 ,  H01L29/41766 ,  H01L29/42368 ,  H01L29/66727 ,  H01L29/66734

摘要： According to one embodiment, a method for manufacturing a semiconductor device includes forming trenches in a first side of a semiconductor material and forming a thick oxide layer on the trenches and on the first side. A part of the first side and the trenches is masked using a first mask, and the semiconductor material is doped by implantation through the thick oxide layer while the first mask is present. At least part of the thick oxide layer is removed while the first mask remains.

摘要翻译： 根据一个实施例，一种用于制造半导体器件的方法包括：在半导体材料的第一侧形成沟槽，并在沟槽和第一侧上形成厚的氧化物层。 使用第一掩模掩模第一侧面和沟槽的一部分，并且通过在第一掩模存在的情况下通过厚氧化物层的注入来掺杂半导体材料。 当第一掩模残留时，去除厚氧化物层的至少一部分。

公开(公告)号：US07446373B2

公开(公告)日：2008-11-04

申请号：US10939154

申请日：2004-09-10

申请人： Markus Zundel ,  Rudolf Zelsacher ,  Franz Hirler ,  Dietmar Kotz ,  Hermann Peri ,  Armin Willmeroth

发明人： Markus Zundel ,  Rudolf Zelsacher ,  Franz Hirler ,  Dietmar Kotz ,  Hermann Peri ,  Armin Willmeroth

IPC分类号： H01L29/76

CPC分类号： H01L29/7813 ,  H01L29/0615 ,  H01L29/0847 ,  H01L29/0878 ,  H01L29/42368 ,  H01L29/7811

摘要： A semiconductor component and also a method for producing it are disclosed. In one embodiment, the semiconductor component includes a surface region or a modified doping region is provided alternatively or simultaneously in the edge region of the cell array, in which surface region or modified doping region the doping concentration is lowered and/or in which surface region or modified doping region the conductivity type is formed such that it is opposite to the conductivity type of the actual semiconductor material region, or in which a field plate region is provided.

摘要翻译： 公开了一种半导体元件及其制造方法。 在一个实施例中，半导体部件包括表面区域或修改的掺杂区域交替地或同时地设置在电池阵列的边缘区域中，其中掺杂浓度降低的表面区域或修饰掺杂区域和/或其中表面区域 或改性掺杂区域形成导电类型，使其与实际的半导体材料区域的导电类型相反，或者设置有场板区域。

公开(公告)号：US20080265318A1

公开(公告)日：2008-10-30

申请号：US12167437

申请日：2008-07-03

申请人： Markus Zundel ,  Rudolf Zelsacher ,  Franz Hirler ,  Dietmar Kotz ,  Hermann Peri ,  Armin Willmeroth

发明人： Markus Zundel ,  Rudolf Zelsacher ,  Franz Hirler ,  Dietmar Kotz ,  Hermann Peri ,  Armin Willmeroth

IPC分类号： H01L27/088 ,  H01L21/8234

CPC分类号： H01L29/7813 ,  H01L29/0615 ,  H01L29/0847 ,  H01L29/0878 ,  H01L29/42368 ,  H01L29/7811

摘要： A semiconductor component includes a surface region. A modified doping region is provided in the edge region of the cell array. In the surface region or modified doping region the doping concentration is lowered and/or in the surface region or modified doping region the conductivity type is formed such that it is opposite to the conductivity type of the actual semiconductor material region, or in which a field plate region is provided.

摘要翻译： 半导体部件包括表面区域。 在单元阵列的边缘区域中提供修改的掺杂区域。 在表面区域或改性掺杂区域中，掺杂浓度降低和/或在表面区域或修饰掺杂区域中形成导电类型，使其与实际半导体材料区域的导电类型相反，或者其中场 板区域。

公开(公告)号：US20080230833A1

公开(公告)日：2008-09-25

申请号：US11690494

申请日：2007-03-23

申请人： Markus Zundel ,  Franz Hirler ,  Ralf Siemieniec

发明人： Markus Zundel ,  Franz Hirler ,  Ralf Siemieniec

IPC分类号： H01L29/78 ,  H01L21/336

CPC分类号： H01L29/7802 ,  H01L29/0878 ,  H01L29/407 ,  H01L29/41766 ,  H01L29/42368 ,  H01L29/66734 ,  H01L29/7809 ,  H01L29/7813

摘要： A semiconductor component having a semiconductor body having first and second semiconductor regions of a first conduction type, and a third semiconductor region of a second conduction type, which is complementary to the first conduction type. The second semiconductor region is arranged between the first and third semiconductor region and together with the first semiconductor region forms a first junction region and together with the third semiconductor region forms a second junction region. In the second semiconductor region the dopant concentration is lower than the dopant concentration in the first semiconductor region. The dopant concentration in the second semiconductor region along a straight connecting line between the first and third semiconductor regions is inhomogeneous and has at least one minimum between the first and second junction regions, wherein the minimum is at a distance from the first and second junction regions.

摘要翻译： 一种半导体元件，具有半导体本体，该半导体本体具有第一导电类型的第一和第二半导体区域以及与第一导电类型互补的第二导电类型的第三半导体区域。 第二半导体区域布置在第一和第三半导体区域之间并与第一半导体区域一起形成第一结区域，并与第三半导体区域一起形成第二结区域。 在第二半导体区域中，掺杂剂浓度低于第一半导体区域中的掺杂剂浓度。 沿着第一和第三半导体区域之间的直连接线的第二半导体区域中的掺杂剂浓度是不均匀的，并且在第一和第二结区域之间具有至少一个最小值，其中最小值距离第一和第二接合区域 。

公开(公告)号：US20080128803A1

公开(公告)日：2008-06-05

申请号：US11947552

申请日：2007-11-29

申请人： Franz Hirler ,  Markus Zundel

发明人： Franz Hirler ,  Markus Zundel

IPC分类号： H01L29/78

CPC分类号： H01L29/7813 ,  H01L29/407 ,  H01L29/41741 ,  H01L29/4238 ,  H01L29/7811 ,  H01L29/945

摘要： A connecting structure for an electronic device includes an edge region of the device, a first trench and a second trench running toward the edge region, a first electrode within the first trench, and a second electrode within the second trench, the first and second electrodes being arranged in a same electrode plane with regard to a main surface of a substrate of the electronic device within the trenches, and the first electrode extending, at an edge region side end of the first trench, farther toward the edge region than the second electrode extends, at an edge region side end of the second trench, toward the edge region.

摘要翻译： 电子设备的连接结构包括器件的边缘区域，朝向边缘区域延伸的第一沟槽和第二沟槽，第一沟槽内的第一电极和第二沟槽内的第二电极，第一和第二电极 相对于沟槽内的电子器件的基板的主表面而布置在相同的电极平面中，并且在第一沟槽的边缘区域侧端部延伸的第一电极比第二电极更向边缘区域延伸 在第二沟槽的边缘区域侧端部延伸到边缘区域。

公开(公告)号：US07372103B2

公开(公告)日：2008-05-13

申请号：US11395103

申请日：2006-03-31

申请人： Markus Zundel ,  Franz Hirler

发明人： Markus Zundel ,  Franz Hirler

IPC分类号： H01L29/76

CPC分类号： H01L29/7813 ,  H01L29/0873 ,  H01L29/41766 ,  H01L29/42368

摘要： A MOS field plate trench transistor device is disclosed. In one embodiment, in order to obtain a lowest possible on resistance, in the case of a MOS field plate trench transistor device having a body contact hole, it is proposed to form the avalanche breakdown region preferably in an end region of a provided trench structure by virtue of the fact that a mesa region with the body contact region in the semiconductor region as intermediate region in a direction running perpendicular to the first direction and with respect to an adjacent MOS transistor device has a width DMesa, the value of which corresponds to the value of the width DTrench of the trench structure in this direction or exceeds said value and does not go beyond 1.5 times said value, so that the following holds true: DTrench≦DMesa≦1.5·DTrench. As an alternative, the width DMesa is chosen such that the body contact hole precisely still has space, but the breakdown region is in any event shifted into the end region.

摘要翻译： 公开了一种MOS场板沟槽晶体管器件。 在一个实施例中，为了获得最低可能的导通电阻，在具有体接触孔的MOS场板沟槽晶体管器件的情况下，优选地在所提供的沟槽结构的端部区域中形成雪崩击穿区域 由于在半导体区域中具有与第一方向垂直的方向作为中间区域并且相对于相邻的MOS晶体管器件的半导体区域的台面区域具有宽度D Sub Mesa ，其值对应于该方向上的沟槽结构的宽度D <沟槽的值或超过所述值，并且不超过所述值的1.5倍，使得以下是正确的： 作为替代方案，选择宽度D Mesa 使得身体接触孔精确地仍然具有空间，但击穿区域在任何情况下都移入端部区域。

公开(公告)号：US20070215920A1

公开(公告)日：2007-09-20

申请号：US11715275

申请日：2007-03-07

申请人： Markus Zundel ,  Franz Hirler ,  Norbert Krischke

发明人： Markus Zundel ,  Franz Hirler ,  Norbert Krischke

IPC分类号： H01L29/76

CPC分类号： H01L29/7816 ,  H01L21/743 ,  H01L27/0733 ,  H01L28/40 ,  H01L29/0696 ,  H01L29/407 ,  H01L29/41766 ,  H01L29/66734 ,  H01L29/7803 ,  H01L29/7804 ,  H01L29/7809 ,  H01L29/7813 ,  H01L29/945

摘要： Disclosed is a semiconductor component arrangement and a method for producing a semiconductor component arrangement. The method comprises producing a trench transistor structure with at least one trench disposed in the semiconductor body and with at least a gate electrode disposed in the at least one trench. An electrode structure is disposed in at least one further trench and comprises an at least one electrode. The at least one trench of the transistor structure and the at least one further trench are produced by common process steps. Furthermore, the at least one electrode of the electrode structure and the gate electrode are produced by common process steps.

摘要翻译： 公开了一种用于制造半导体元件布置的半导体元件布置和方法。 该方法包括产生沟槽晶体管结构，其中至少一个沟槽设置在半导体本体中，并且至少一个栅电极设置在该至少一个沟槽中。 电极结构设置在至少一个另外的沟槽中，并且包括至少一个电极。 晶体管结构的至少一个沟槽和至少一个另外的沟槽通过公共工艺步骤产生。 此外，电极结构的至少一个电极和栅电极通过常规的工艺步骤制造。

公开(公告)号：US20060258105A1

公开(公告)日：2006-11-16

申请号：US11395103

申请日：2006-03-31

申请人： Markus Zundel ,  Franz Hirler

发明人： Markus Zundel ,  Franz Hirler

IPC分类号： H01L27/10 ,  H01L21/336

CPC分类号： H01L29/7813 ,  H01L29/0873 ,  H01L29/41766 ,  H01L29/42368

摘要： A MOS field plate trench transistor device is disclosed. In one embodiment, in order to obtain a lowest possible on resistance, in the case of a MOS field plate trench transistor device having a body contact hole, it is proposed to form the avalanche breakdown region preferably in an end region of a provided trench structure by virtue of the fact that a mesa region with the body contact region in the semiconductor region as intermediate region in a direction running perpendicular to the first direction and with respect to an adjacent MOS transistor device has a width DMesa, the value of which corresponds to the value of the width DTrench of the trench structure in this direction or exceeds said value and does not go beyond 1.5 times said value, so that the following holds true: DTrench≦DMesa≦1.5·DTrench. As an alternative, the width DMesa is chosen such that the body contact hole precisely still has space, but the breakdown region is in any event shifted into the end region.

摘要翻译： 公开了一种MOS场板沟槽晶体管器件。 在一个实施例中，为了获得最低可能的导通电阻，在具有体接触孔的MOS场板沟槽晶体管器件的情况下，优选地在所提供的沟槽结构的端部区域中形成雪崩击穿区域 由于在半导体区域中具有与第一方向垂直的方向作为中间区域并且相对于相邻的MOS晶体管器件的半导体区域的台面区域具有宽度D Sub Mesa ，其值对应于该方向上的沟槽结构的宽度D <沟槽的值，或者超过所述值，并且不超过所述值的1.5倍，使得以下情况成立： 作为替代方案，选择宽度D Mesa 使得身体接触孔精确地仍然具有空间，但击穿区域在任何情况下都移入端部区域。

公开(公告)号：US20050118816A1

公开(公告)日：2005-06-02

申请号：US10955392

申请日：2004-09-30

申请人： Franz Hirler ,  Markus Zundel

发明人： Franz Hirler ,  Markus Zundel

IPC分类号： H01L21/306 ,  H01L21/331 ,  H01L21/336 ,  H01L29/06 ,  H01L29/08 ,  H01L29/417 ,  H01L29/78 ,  H01L31/062 ,  H01L31/113 ,  H01L21/302 ,  H01L21/461

CPC分类号： H01L29/66333 ,  H01L21/30604 ,  H01L29/0657 ,  H01L29/0847 ,  H01L29/41741 ,  H01L29/41766 ,  H01L29/66712 ,  H01L29/66734 ,  H01L29/7802 ,  H01L29/7813

摘要： A method for fabricating a semiconductor power component is disclosed. In one embodiment, the method for fabricating a semiconductor power component includes formation of a semiconductor structure in/on a substrate, a semiconductor region serving as a stop layer being formed at the level of a target thickness of the semiconductor power component through the semiconductor structure in the semiconductor structure or in the substrate, the doping concentration of said semiconductor region being increased/reduced with respect to that of the substrate, and/or the doping type of said semiconductor region being inverted with respect to that of the substrate. At least one part of the substrate is thinned to the target thickness using an etchant whose etching rate is dependent on the concentration and/or the type of the doping, the etchant being chosen such that the thinning process is stopped or slowed down by the semiconductor region serving as a stop layer.

摘要翻译： 公开了一种制造半导体功率元件的方法。 在一个实施例中，制造半导体功率部件的方法包括在衬底中/在衬底中形成半导体结构，通过半导体结构在半导体功率部件的目标厚度的水平上形成用作停止层的半导体区域 在半导体结构中或在衬底中，所述半导体区域的掺杂浓度相对于衬底的掺杂浓度增加/减少，和/或所述半导体区域的掺杂类型相对于衬底的掺杂类型被反转。 使用蚀刻剂蚀刻速率取决于浓度和/或掺杂类型的蚀刻剂将衬底的至少一部分变薄到目标厚度，蚀刻剂被选择为使得稀化处理被半导体停止或减慢 作为停止层的区域。

公开(公告)号：US06806533B2

公开(公告)日：2004-10-19

申请号：US10402872

申请日：2003-03-28

申请人： Ralf Henninger ,  Franz Hirler ,  Joachim Krumrey ,  Markus Zundel ,  Walter Rieger ,  Martin Pölzl

发明人： Ralf Henninger ,  Franz Hirler ,  Joachim Krumrey ,  Markus Zundel ,  Walter Rieger ,  Martin Pölzl

IPC分类号： H01L2972

CPC分类号： H01L29/7813 ,  H01L29/0696 ,  H01L29/407 ,  H01L29/4236 ,  H01L29/42368 ,  H01L29/7811

摘要： A semiconductor component has a cell array formed in a semiconductor body with a number of identical transistor cells and at least one edge cell formed at an edge of the cell array. Each of the transistor cells has a control electrode, which is formed in a trench, and the edge cell has a field plate, which is formed in a trench, with a distance between the trench of the edge cell and the trench of the immediately adjacent transistor cell being less than the distance between a trench of a transistor cell and the trench of an immediately adjacent transistor cell in the cell array.

摘要翻译： 半导体元件具有形成在具有多个相同晶体管单元的半导体本体中的单元阵列和形成在单元阵列的边缘处的至少一个边沿单元。 每个晶体管单元具有形成在沟槽中的控制电极，并且边缘单元具有形成在沟槽中的场板，边缘电池的沟槽与紧邻的沟槽之间的距离 晶体管单元小于晶体管单元的沟槽与单元阵列中紧邻的晶体管单元的沟槽之间的距离。