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41.发明授权Method for displaying position of alignment mark, array substrate and manufacturing method thereof 有权显示对准标记位置的方法，阵列基板及其制造方法公开(公告)号：US09583443B2
公开(公告)日：2017-02-28
申请号：US15098456
申请日：2016-04-14
发明人： Binbin Cao , Yinhu Huang , Chengshao Yang
IPC分类号： H01L29/15 , H01L23/544 , H01L27/12
CPC分类号： H01L23/544 , H01L27/1218 , H01L27/1262 , H01L2223/54426 , H01L2223/54486
摘要： A method for displaying a position of an alignment mark, an array substrate and a manufacturing method thereof are provided. The method for displaying the position of the alignment mark includes: forming an alignment mark on a surface of a base substrate; forming a first isolation layer covering the alignment mark; forming a via hole in the first isolation layer to expose the alignment mark; applying a first material in the via hole to form a first material pattern; and applying a second material on surfaces of the first material pattern and the first isolation layer to form a second material film, wherein the first material and the second material are configured to have different polarities, so that the second material cannot be attached to the first material pattern.
摘要翻译： 提供一种显示对准标记位置的方法，阵列基板及其制造方法。 用于显示对准标记的位置的方法包括：在基底基板的表面上形成对准标记; 形成覆盖所述对准标记的第一隔离层; 在所述第一隔离层中形成通孔以露出所述对准标记; 在所述通孔中施加第一材料以形成第一材料图案; 以及将第二材料施加在所述第一材料图案和所述第一隔离层的表面上以形成第二材料膜，其中所述第一材料和所述第二材料被配置为具有不同的极性，使得所述第二材料不能附着到所述第一材料膜上 材质图案
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公开(公告)号：US11469253B2
公开(公告)日：2022-10-11
申请号：US16074976
申请日：2017-11-14
申请人： Beijing BOE Technology Development Co., Ltd. , Hefei Xinsheng Optoelectronics Technology Co., Ltd.
发明人： Binbin Cao , Haijiao Qian , Chengshao Yang , Yinhu Huang
IPC分类号： H01L27/12
摘要： A manufacturing method of an array substrate, an array substrate and a display device are disclosed. The manufacturing method of the array substrate includes: providing a base substrate (200); forming a semiconductor layer on the base substrate; depositing an etch stop layer material on the semiconductor layer; subjecting the etch stop layer material to a wet etching process to form an etch stop layer; subjecting the semiconductor layer to a dry etching process to form an active layer, wherein the active layer includes a first region and a second region surrounding the first region, an orthographic projection of the etch stop layer on the base substrate completely coincides with an orthographic projection of the first region of the active layer on the base substrate.
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公开(公告)号：US10139939B2
公开(公告)日：2018-11-27
申请号：US14436020
申请日：2014-07-17
发明人： Bozhu Zhou , Myoung Kee Baek , Xianxue Duan , Cheng Chen , Chengshao Yang , Binbin Cao
摘要： An optical touch screen and a display device are disclosed. The optical touch screen (200) comprises an optical touch panel (210) and a first sensor (220) and a second sensor (230). The optical touch panel (210) comprises a first optical transmission channel (211) and a second optical transmission channel (212) which are intersected with each other. The first sensor (220) is disposed on at least one end of the first optical transmission channel (211) and configured to receive light emitted by the first optical transmission channel (211). The second sensor (230) is disposed on at least one end of the second optical transmission channel (212) and configured to receive light emitted by the second optical transmission channel (212). The optical touch screen and the display device can improve the positioning accuracy of the touch position.
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公开(公告)号：US09647141B2
公开(公告)日：2017-05-09
申请号：US15098385
申请日：2016-04-14
发明人： Botao Song , Tao Jiang , Junhao Han , Ling Han , Binbin Cao , Chengshao Yang
IPC分类号： H01L29/10 , H01L29/786 , H01L27/12
CPC分类号： H01L29/78696 , H01L27/1225 , H01L27/127 , H01L27/1288 , H01L29/41733 , H01L29/78606 , H01L29/78633 , H01L29/7869
摘要： Embodiments of the present disclosure provide a thin film transistor (TFT) and a method of manufacturing the same, which enables to decrease the vertical resistance from the source and the drain to the polarity inversion region, so that the current from the source and the drain to the polarity inversion region may be increased, thereby improving the performances of the TFT. An active layer of the TFT is provided with a first groove and a second groove which neither pass through the active layer. A source and a drain of the TFT are formed at least partially in the first groove and the second groove, respectively. The source and the drain contact the active layer through the first groove and the second groove, respectively.
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公开(公告)号：US11114469B2
公开(公告)日：2021-09-07
申请号：US16396726
申请日：2019-04-28
发明人： Bin Zhou , Binbin Cao , Liangchen Yan , Dongfang Wang , Ce Zhao , Luke Ding , Jun Liu
IPC分类号： H01L27/12
摘要： The present disclosure is in the field of display technologies, and provides an array substrate including an IGZO film layer, a gate layer, and a gate insulating layer. The gate layer is provided with broken lines at a position thereof overlapping the IGZO film layer to form a first gate line and a second gate line. The gate insulating layer is disposed between the IGZO film layer and the gate layer, and is provided with at least two through holes thereon, in which the first gate line is connected with the IGZO film layer through one of the through holes, and the second gate line is connected with the IGZO film layer through another through hole, thus, connecting the IGZO film layer in series into the gate layer.
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公开(公告)号：US20160351725A1
公开(公告)日：2016-12-01
申请号：US15098385
申请日：2016-04-14
发明人： Botao Song , Tao Jiang , Junhao Han , Ling Han , Binbin Cao , Chengshao Yang
IPC分类号： H01L29/786 , H01L27/12
CPC分类号： H01L29/78696 , H01L27/1225 , H01L27/127 , H01L27/1288 , H01L29/41733 , H01L29/78606 , H01L29/78633 , H01L29/7869
摘要： Embodiments of the present disclosure provide a thin film transistor (TFT) and a method of manufacturing the same, which enables to decrease the vertical resistance from the source and the drain to the polarity inversion region, so that the current from the source and the drain to the polarity inversion region may be increased, thereby improving the performances of the TFT. An active layer of the TFT is provided with a first groove and a second groove which neither pass through the active layer. A source and a drain of the TFT are formed at least partially in the first groove and the second groove, respectively. The source and the drain contact the active layer through the first groove and the second groove, respectively.
摘要翻译： 本公开的实施例提供一种薄膜晶体管（TFT）及其制造方法，其能够降低从源极和漏极到极性反转区域的垂直电阻，使得来自源极和漏极的电流 可以增加极性反转区域，从而提高TFT的性能。 TFT的有源层设置有不穿过有源层的第一沟槽和第二沟槽。 TFT的源极和漏极分别至少部分地形成在第一沟槽和第二沟槽中。 源极和漏极分别通过第一凹槽和第二凹槽接触有源层。
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47.发明授权Array substrate, method for producing the array substrate, and display apparatus 有权阵列基板，阵列基板的制造方法以及显示装置公开(公告)号：US09417493B2
公开(公告)日：2016-08-16
申请号：US14084225
申请日：2013-11-19
发明人： Binbin Cao , Baek Myoung Kee , Yinhu Huang , Xiangyang Xu
IPC分类号： G02F1/1343 , G02F1/1362 , G02F1/1333
CPC分类号： G02F1/13439 , G02F1/136204 , G02F2001/133337 , G02F2001/134372
摘要： An array substrate of a liquid crystal display, comprising: a substrate; a first electrode disposed on the substrate; a second electrode located above and electrically insulated from the first electrode; and an orientation film disposed on the second electrode, wherein the array substrate further comprising: at least one shunt electrode connected to at least one of first electrodes to divert residual charges left over a surface of a liquid crystal molecule, and the shunt electrode is located at a side of the orientation film not contacting the liquid crystal molecule.
摘要翻译： 液晶显示器的阵列基板，包括：基板; 设置在所述基板上的第一电极; 位于第一电极之上并与第一电极电绝缘的第二电极; 以及设置在所述第二电极上的取向膜，其中所述阵列基板还包括：至少一个分流电极，其连接到第一电极中的至少一个，以转移残留在液晶分子表面上的残余电荷，并且所述分流电极位于 在不接触液晶分子的取向膜的一侧。
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48.发明授权Oxide thin film transistor array substrate having transparent connection structure connecting source electrode and data line of oxide TFT and display panel including the same 有权氧化物薄膜晶体管阵列基板，其具有连接源电极和氧化物TFT的数据线的透明连接结构和包括其的显示面板公开(公告)号：US09502575B2
公开(公告)日：2016-11-22
申请号：US14354215
申请日：2013-04-24
发明人： Binbin Cao , Chengshao Yang , Bozhu Zhou
IPC分类号： H01L29/786 , H01L27/32 , G02F1/1368 , G02F1/1362 , H01L27/12 , H01L21/02 , H01L29/24 , H01L29/423 , H01L29/66
CPC分类号： H01L29/7869 , G02F1/136286 , G02F1/1368 , H01L21/02565 , H01L27/1225 , H01L27/124 , H01L27/1248 , H01L27/1259 , H01L27/3248 , H01L27/3288 , H01L29/24 , H01L29/42356 , H01L29/66969
摘要： An oxide thin film transistor array substrate, a manufacturing method thereof and a display panel are provided. The oxide TFT array substrate includes a base substrate and an oxide TFT, a gate line, a data line and a pixel electrode provided on the base substrate, the drain electrode of the oxide TFT being connected with the pixel electrode, wherein a connection structure is provided between the source electrode of the oxide TFT and the data line, by which the source electrode of the oxide TFT and the data line are electrically connected, and the resistivity of the connection structure is larger than the resistivity of the source electrode.
摘要翻译： 提供氧化物薄膜晶体管阵列基板，其制造方法和显示面板。 氧化物TFT阵列基板包括基底和氧化物TFT，栅极线，数据线和设置在基底基板上的像素电极，氧化物TFT的漏极与像素电极连接，其中连接结构为 设置在氧化物TFT的源电极和数据线之间，氧化物TFT的源电极和数据线电连接，并且连接结构的电阻率大于源电极的电阻率。
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49.发明授权Array substrate and manufacturing method thereof, and display device including the array substrate 有权阵列基板及其制造方法以及包括阵列基板的显示装置公开(公告)号：US09490270B2
公开(公告)日：2016-11-08
申请号：US14380168
申请日：2013-12-14
发明人： Xiangyang Xu , Liyun Deng , Minsu Kim , Binbin Cao
IPC分类号： H01L27/14 , H01L29/04 , H01L27/12 , H01L29/786 , H01L29/24 , H01L21/027 , H01L21/3213 , H01L21/4763 , H01L29/66 , G02F1/1343 , G02F1/1362
CPC分类号： H01L27/124 , G02F1/134309 , G02F1/134363 , G02F1/13439 , G02F1/136286 , G02F2001/134345 , G02F2001/134372 , G02F2001/136295 , H01L21/0274 , H01L21/32139 , H01L21/47635 , H01L27/1222 , H01L27/1225 , H01L27/1288 , H01L29/24 , H01L29/66765 , H01L29/66969 , H01L29/78606 , H01L29/78669 , H01L29/7869
摘要： An array substrate and manufacturing method thereof and a display device having the array substrate are provided. The array substrate includes a non-pixel region distributed in the form of a grid and a plurality of sub-pixel regions formed by being surrounded by the non-pixel region, a plurality of scan lines (12) and data lines (16) disposed in a crossing manner are provided within the non-pixel region, and a common electrode (20) is provided in the sub-pixel regions and the non-pixel region. A zone of the common electrode (20) corresponding to the sub-pixel regions has a first thickness, a zone of the common electrode (20) corresponding to the scan lines (12) and/or the data lines (16) has a second thickness, and the first thickness is smaller than the second thickness. By means of arranging the common electrode (20) to have such a structure that thickness of its zone corresponding to scan lines (12) and/or data lines (16) in a non-pixel region is larger than thickness of its zone corresponding to sub-pixel regions, the ability of conductivity of the common electrode (20) can be enhanced, and this makes the voltage distribution on the whole liquid crystal display panel for the common electrode (20) be more even. Thus, the display quality of picture is improved, and the quality grade of the display device is promoted.
摘要翻译： 提供阵列基板及其制造方法以及具有阵列基板的显示装置。 阵列基板包括以栅格形式分布的非像素区域和由非像素区域包围形成的多个子像素区域，多个扫描线（12）和数据线（16）被布置 在非像素区域内设置交叉方式，在子像素区域和非像素区域设置公共电极（20）。 对应于子像素区域的公共电极（20）的区域具有第一厚度，对应于扫描线（12）和/或数据线（16）的公共电极（20）的区域具有第二厚度 厚度，第一厚度小于第二厚度。 通过将公共电极（20）布置成具有与非像素区域中的扫描线（12）和/或数据线（16）对应的区域的厚度大于其对应于其区域的区域的厚度的结构 子像素区域，可以提高公共电极（20）的导电性能，这使得公共电极（20）的整个液晶显示面板的电压分布更均匀。 因此，提高了图像的显示质量，促进了显示装置的质量等级。
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公开(公告)号：US09159867B2
公开(公告)日：2015-10-13
申请号：US14021314
申请日：2013-09-09
发明人： Bozhu Zhou , Mingji Bai , Binbin Cao , Na Zhao , Wenlong Wang , Yijun Wang
CPC分类号： H01L27/1259 , H01L21/3213 , H01L27/124 , H01L29/42356 , H01L29/42384 , H01L29/458 , H01L33/0041
摘要： Embodiments of the invention provide an array substrate, a manufacturing method thereof and a display device. The array substrate comprises: a base substrate; a gate line and a gate electrode formed on the base substrate; a gate insulating layer formed on the gate line and the gate electrode; a source electrode, a drain electrode and a pixel electrode formed on the gate insulating layer, wherein the pixel electrode is directly connected to the drain electrode; and an active layer formed on the gate insulating layer, the source electrode and the drain electrode.
摘要翻译： 本发明的实施例提供阵列基板，其制造方法和显示装置。 阵列基板包括：基底; 形成在基底基板上的栅极线和栅电极; 形成在栅极线和栅电极上的栅极绝缘层; 形成在所述栅极绝缘层上的源电极，漏电极和像素电极，其中所述像素电极直接连接到所述漏电极; 以及形成在栅极绝缘层，源电极和漏电极上的有源层。
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