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公开(公告)号:US20170317473A1
公开(公告)日:2017-11-02
申请号:US15140588
申请日:2016-04-28
Applicant: HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP
Inventor: Di Liang , Geza Kurczveil , Raymond G. Beausoleil , Marco Fiorentino
CPC classification number: H01S5/343 , H01S3/0637 , H01S3/2375 , H01S5/021 , H01S5/0216 , H01S5/0261 , H01S5/0424 , H01S5/1032 , H01S5/3211 , H01S5/3412 , H01S5/347
Abstract: An example method of manufacturing a semiconductor device. A first wafer may be provided that includes a first layer that contains quantum dots. A second wafer may be provided that includes a buried dielectric layer and a second layer on the buried dielectric layer. An interface layer may be formed on at least one of the first layer and the second layer, where the interface layer may be an insulator, a transparent electrical conductor, or a polymer. The first wafer may be bonded to the second wafer by way of the interface layer.
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公开(公告)号:US20250035850A1
公开(公告)日:2025-01-30
申请号:US18358468
申请日:2023-07-25
Applicant: HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP
Inventor: Yiwei Peng , Stanley Cheung , Geza Kurczveil , Yuan Yuan , Zhihong Huang , Marco Fiorentino
Abstract: An example optical system having an optical supply sub-system for supplying light to a photonic integrated circuit is presented. The optical supply sub-system includes a primary light source, an auxiliary light source, a first optical coupler, and a second optical coupler. The first optical coupler includes a first metal-oxide-semiconductor capacitor microring resonator (MOSCAP MRR) and the first optical coupler includes a second MOSCAP MRR. The first optical coupler is coupled to the primary light source and the photonic integrated circuit to control the propagation of the primary light to the photonic integrated circuit. The auxiliary light source may be configured to generate an auxiliary light when the primary light source malfunctions and the first MOSCAP MRR and the second MOSCAP MRR are controlled to control propagation of the auxiliary light from the auxiliary light source to the photonic integrated circuit.
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公开(公告)号:US11876345B2
公开(公告)日:2024-01-16
申请号:US17015001
申请日:2020-09-08
Applicant: HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP
Inventor: Di Liang , Chih C. Shih , Kevin B. Leigh , Geza Kurczveil , Marco Fiorentino
IPC: H01S5/024 , H01S5/0237 , H01S5/0239 , H01S5/187 , H01S5/40 , H01S5/00
CPC classification number: H01S5/02469 , H01S5/0237 , H01S5/0239 , H01S5/02476 , H01S5/187 , H01S5/0085 , H01S5/4025
Abstract: Techniques and systems for a semiconductor laser, namely a grating-coupled surface-emitting (GCSE) comb laser, having thermal management for facilitating dissipation of heat, integrated thereon. The thermal management is structured in manner that prevents deformation or damage to the GCSE laser chips included in the semiconductor laser implementation. The disclosed thermal management elements integrated in the laser can include: heat sinks; support bars; solder joints; thermal interface material (TIM); silicon vias (TSV); and terminal conductive sheets. Support bars, for example, having the GCSE laser chip positioned between the bars and having a height that is higher than a thickness of the GCSE laser chip. Accordingly, the heat sink can be placed on top of the support bars such that heat is dissipated from the GCSE laser chip, and the heat sink is separated from directed contact with the GCSE laser chip due to the height of the support bars.
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公开(公告)号:US11487181B2
公开(公告)日:2022-11-01
申请号:US16946653
申请日:2020-06-30
Applicant: Hewlett Packard Enterprise Development LP
Inventor: Sudharsanan Srinivasan , Di Liang , Geza Kurczveil , Raymond G. Beausoleil
Abstract: Examples herein relate to optical systems. In particular, implementations herein relate to an optical system including an optical transmitter configured to transmit optical signals. The optical transmitter includes a first optical source coupled to an input waveguide and configured to emit light having different wavelengths through the input waveguide. The optical transmitter includes a Mach-Zehnder interferometer that includes a first arm and a second arm. The MZI further includes a first optical coupler configured to couple the emitted light from the input waveguide to the first and second arms and an array of two or more second optical sources coupled to the first arm. Each of the two or more second optical sources are configured to be injection locked to a different respective wavelength of the emitted light transmitted from the first optical source. The MZI further includes a second optical coupler configured to combine the emitted light from the first and second arms after propagating therethrough.
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公开(公告)号:US20220021459A1
公开(公告)日:2022-01-20
申请号:US16947056
申请日:2020-07-16
Applicant: Hewlett Packard Enterprise Development LP
Inventor: Geza Kurczveil , Di Liang , Sudharsanan Srinivasan , Raymond G. Beausoleil
IPC: H04B10/50
Abstract: Examples herein relate to optical systems. In particular, implementations herein relate to an optical system including an optical transmitter configured to transmit optical signals. The optical transmitter includes a first optical source and a second optical source coupled to the first optical source and injection seeded by the first optical source. The optical transmitter further includes an output coupler, the second optical source coupled to the optical coupler via an output waveguide and configured to emit light having multiple different wavelengths through the output waveguide. In some implementations, the second optical source is self-injection seeded.
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公开(公告)号:US11199673B2
公开(公告)日:2021-12-14
申请号:US16528182
申请日:2019-07-31
Applicant: Hewlett Packard Enterprise Development LP
Inventor: Paul Kessler Rosenberg , Geza Kurczveil
Abstract: Examples herein relate to optoelectronic systems or modules. In particular, implementations herein relate to an optoelectronic module or system that includes a substrate having opposing first and second sides and an optoelectronic component having opposing first and second sides flip chip assembled to the substrate. The optoelectronic component is configured to emit at least one optical signal to the substrate, receive at least one optical signal from the substrate, or both. The optoelectronic system further includes an underfill exclusion structure configured to prevent underfill material dispensed between the optoelectronic component and the substrate from flowing into an optical area or path of the at least one optical signal transmitted between the optoelectronic component and the substrate. The underfill exclusion structure is spaced apart from at least one of the optoelectronic component or the substrate.
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公开(公告)号:US11177631B2
公开(公告)日:2021-11-16
申请号:US15930955
申请日:2020-05-13
Applicant: HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP
Inventor: Geza Kurczveil , Di Liang , Raymond G. Beausoleil
Abstract: Examples disclosed herein relate to multi-wavelength semiconductor comb lasers. In some examples disclosed herein, a multi-wavelength semiconductor comb laser may include a waveguide included in an upper silicon layer of a silicon-on-insulator (SOI) substrate. The comb laser may include a quantum dot (QD) active gain region above the SOI substrate defining an active section in a laser cavity of the comb laser and a dispersion tuning section included in the laser cavity to tune total cavity dispersion of the comb laser.
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公开(公告)号:US10989878B2
公开(公告)日:2021-04-27
申请号:US15929675
申请日:2020-05-15
Applicant: HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP
Inventor: Raymond G. Beausoleil , Di Liang , Marco Fiorentino , Geza Kurczveil , Mir Ashkan Seyedi , Zhihong Huang
Abstract: An example system for multi-wavelength optical signal splitting is disclosed. The example disclosed herein comprises a first splitter, a second splitter, and a modulator. The system receives a multi-wavelength optical signal and an electrical signal, wherein the multi-wavelength optical signal comprises a plurality of optical wavelengths and has a power level. The first splitter is to split the plurality of optical wavelengths into a plurality of optical wavelength groups. The second splitter is to split the multi-wavelength optical signal or the plurality of optical wavelength groups into a plurality of lower power signal groups. The modulator is to encode the electrical signal into the plurality of optical wavelength groups, the plurality of lower power signal groups, or a combination thereof.
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公开(公告)号:US10897119B1
公开(公告)日:2021-01-19
申请号:US16570830
申请日:2019-09-13
Applicant: HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP
Inventor: Geza Kurczveil , Di Liang , Zhihong Huang , Xiaoge Zeng , Raymond G. Beausoleil
IPC: H01S3/13 , H01S5/0687 , H01S5/068 , H01S5/026 , H01S5/02 , H01S5/10 , G01J1/04 , H01S5/0683 , H01S5/06 , H04J14/02 , H04B10/69 , H04B10/079 , G01K7/16 , G01J5/20 , G01J5/08 , H04B10/50 , H01S5/343
Abstract: Techniques and circuitry for a semiconductor laser with enhanced lasing wavelengths stabilization are described. A semiconductor laser can generate an optical signal (e.g., single or multi-wavelength), for use in a Dense Wavelength Division Multiplexing (DWDM) interconnect system. The stabilization circuitry can include temperature sensor circuitry that measures an operational temperature of the semiconductor laser, and a feedback controller that can determine a temperature-induced wavelength shift that may be experienced by the multi-wavelength optical signal based on the laser's temperature. The feedback controller is also configured to generate a compensation signal that is determined to cause a complimentary shift in the multi-wavelength optical signal, where the complimentary shift can compensate for the temperature-induced wavelength shift. An integrated MOS capacitor of the laser can be charged by the signal in a manner that effectuates the complimentary shift and tunes the multi-wavelength optical signal to compensate for temperature-induced shift, thereby enhancing stabilization.
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公开(公告)号:US10797468B2
公开(公告)日:2020-10-06
申请号:US16671303
申请日:2019-11-01
Applicant: Hewlett Packard Enterprise Development LP
Inventor: Geza Kurczveil , Di Liang , Raymond G. Beausoleil
IPC: H01S5/00 , H01S5/10 , H01S5/34 , H01S5/065 , H01S5/06 , H01S5/22 , H01S5/02 , H01S5/068 , H01S5/50
Abstract: Examples disclosed herein relate to multi-wavelength semiconductor lasers. In some examples disclosed herein, a multi-wavelength semiconductor laser may include a silicon-on-insulator (SOI) substrate and a quantum dot (QD) layer above the SOI substrate. The QD layer may include and active gain region and may have at least one angled junction at one end of the QD layer. The SOI substrate may include a waveguide in an upper silicon layer and a mode converter to facilitate optical coupling of a lasing mode to the waveguide.
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