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    Phase changeable memory cell array region and method of forming the same
    44.
    发明授权
    Phase changeable memory cell array region and method of forming the same 有权
    相变存储单元阵列区域及其形成方法

    公开(公告)号：US07638787B2

    公开(公告)日：2009-12-29

    申请号：US11581012

    申请日：2006-10-16

    申请人： Hyeong-Geun An ,  Hideki Horii ,  Sang-Yeol Kang

    发明人： Hyeong-Geun An ,  Hideki Horii ,  Sang-Yeol Kang

    IPC分类号： H01L29/02 ,  G11C11/00

    CPC分类号： H01L45/144 ,  H01L27/2436 ,  H01L27/2472 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/126 ,  H01L45/1293 ,  H01L45/165 ,  H01L45/1666

    摘要： A phase changeable memory cell array region includes a lower interlayer insulating layer disposed on a semiconductor substrate. The region also includes a plurality of conductive plugs disposed through the lower interlayer insulating layer. The region also includes a phase changeable material pattern operably disposed on the lower interlayer insulating layer, the phase changeable pattern covering at least two of the plurality of conductive plugs, wherein the phase changeable material pattern includes a plurality of first regions in contact with one or more of the plurality of conductive plugs and at least one second region interposed between the plurality of the first regions, wherein the at least one second region has a lower thermal conductivity than the plurality of first regions. The phase changeable memory cell array region also includes an upper interlayer insulating layer covering at least one of the phase changeable material pattern and the lower interlayer insulating layer. The region also includes conductive patterns disposed through the upper interlayer insulating layer and electrically connected to a plurality of predetermined regions of the plurality of first regions.

    摘要翻译： 相变存储单元阵列区域包括设置在半导体衬底上的下层间绝缘层。 该区域还包括穿过下层间绝缘层设置的多个导电插塞。 所述区域还包括可操作地设置在所述下层间绝缘层上的可相变材料图案，所述相变图案覆盖所述多个导电插塞中的至少两个，其中所述相变材料图案包括多个与第 多个导电插塞中的多个和插入在多个第一区域之间的至少一个第二区域，其中至少一个第二区域具有比多个第一区域更低的热导率。 相变存储单元阵列区域还包括覆盖相变材料图案和下层间绝缘层中的至少一个的上层间绝缘层。 该区域还包括通过上层间绝缘层设置并电连接到多个第一区域中的多个预定区域的导电图案。

    Reflowing of a phase changeable memory element to close voids therein
    45.
    发明授权
    Reflowing of a phase changeable memory element to close voids therein 有权
    相变存储元件的回流以使其中的空隙闭合

    公开(公告)号：US07575776B2

    公开(公告)日：2009-08-18

    申请号：US11843847

    申请日：2007-08-23

    申请人： Hideki Horii

    发明人： Hideki Horii

    IPC分类号： B05D3/02 ,  B05D5/12 ,  H01L29/04

    CPC分类号： H01L21/76816 ,  H01L45/06 ,  H01L45/122 ,  H01L45/1233 ,  H01L45/126 ,  H01L45/143 ,  H01L45/144 ,  H01L45/1625 ,  H01L45/1666

    摘要： A phase changeable memory element is formed by conformally forming a phase changeable material film in a contact hole on a substrate so as to create a void in the phase changeable material film in the contact hole. A capping film is formed on the phase changeable material film, and the void is at least partially closed by a thermal treatment that is sufficient to reflow the phase changeable material film in the void.

    摘要翻译： 相变存储元件通过在基板上的接触孔中共形形成相变材料膜而形成，从而在接触孔中的相变材料膜中产生空隙。 在相变材料膜上形成覆盖膜，并且通过足以使空隙中的相变材料膜回流的热处理至少部分地封闭空隙。

    Phase change memory devices including memory cells having different phase change materials and related methods and systems
    46.
    发明授权
    Phase change memory devices including memory cells having different phase change materials and related methods and systems 有权
    相变存储器件包括具有不同相变材料的存储单元以及相关的方法和系统

    公开(公告)号：US07558100B2

    公开(公告)日：2009-07-07

    申请号：US11881062

    申请日：2007-07-25

    申请人： Dong-Ho Ahn ,  Hideki Horii ,  Jun-Soo Bae

    发明人： Dong-Ho Ahn ,  Hideki Horii ,  Jun-Soo Bae

    IPC分类号： G11C11/00

    CPC分类号： G11C11/5678 ,  G11C7/04 ,  G11C13/0004 ,  G11C2213/79 ,  H01L27/2409 ,  H01L27/2436 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/144 ,  H01L45/148

    摘要： A phase change memory device may include an integrated circuit substrate and first and second phase change memory elements on the integrated circuit substrate. The first phase change memory element may include a first phase change material having a first crystallization temperature. The second phase change memory element may include a second phase change material having a second crystallization temperature. Moreover, the first and second crystallization temperatures may be different so that the first and second phase change memory elements are programmable at different temperatures. Related methods and systems are also discussed.

    摘要翻译： 相变存储器件可以包括集成电路衬底以及集成电路衬底上的第一和第二相变存储元件。 第一相变存储元件可以包括具有第一结晶温度的第一相变材料。 第二相变存储元件可以包括具有第二结晶温度的第二相变材料。 此外，第一和第二结晶温度可以不同，使得第一和第二相变存储元件可在不同温度下编程。 还讨论了相关方法和系统。

    Phase changable memory device structures
    48.
    发明授权
    Phase changable memory device structures 有权
    相变存储器件结构

    公开(公告)号：US07397092B2

    公开(公告)日：2008-07-08

    申请号：US11364950

    申请日：2006-03-01

    申请人： Hideki Horii ,  Suk-Ho Joo ,  Ji-Hye Yi

    发明人： Hideki Horii ,  Suk-Ho Joo ,  Ji-Hye Yi

    IPC分类号： H01L29/76 ,  H01L29/94 ,  H01L31/00

    CPC分类号： H01L45/06 ,  H01L27/2436 ,  H01L45/1233 ,  H01L45/126 ,  H01L45/1293 ,  H01L45/143 ,  H01L45/144 ,  H01L45/1625 ,  H01L45/1675

    摘要： A phase-changeable memory device may include a substrate, an insulating layer on the substrate, first and second electrodes, and a pattern of a phase-changeable material between the first and second electrodes. More particularly, the insulating layer may have a hole therein, and the first electrode may be in the hole in the insulating layer. Moreover, portions of the second electrode may extend beyond an edge of the pattern of phase-changeable material. Related methods are also discussed.

    摘要翻译： 可相变存储器件可以包括衬底，衬底上的绝缘层，第一和第二电极以及第一和第二电极之间的相变材料的图案。 更具体地，绝缘层可以在其中具有孔，并且第一电极可以在绝缘层中的孔中。 此外，第二电极的部分可以延伸超过相变材料图案的边缘。 还讨论了相关方法。

    Non-volatile memory device including phase-change material
    50.
    发明授权
    Non-volatile memory device including phase-change material 有权
    包括相变材料的非易失性存储器件

    公开(公告)号：US08299450B2

    公开(公告)日：2012-10-30

    申请号：US12697667

    申请日：2010-02-01

    申请人： Dong-ho Ahn ,  Hideki Horii ,  Soon-oh Park ,  Young-hyun Kim ,  Heo-ju Shin ,  Jin-ho Oh

    发明人： Dong-ho Ahn ,  Hideki Horii ,  Soon-oh Park ,  Young-hyun Kim ,  Heo-ju Shin ,  Jin-ho Oh

    IPC分类号： H01L29/12

    CPC分类号： H01L45/124 ,  H01L27/2436 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/141 ,  H01L45/144

    摘要： A non-volatile memory device includes a lower electrode, a phase-change material layer formed on the lower electrode so as to be electrically connected to the lower electrode, and an upper electrode formed on the phase-change material layer so as to be electrically connected to the phase-change material layer. The phase-change material layer includes a phase-change material including a composition represented by the formula (I)A(IIXIIIYIVZ)(1-A), where I is at least one of As and Se, II is at least one of Ge, Si and Sn, III is at least one of Sb and Bi, and IV is at least one of Te and Se, and where 0.001≦A≦0.3, 0.001≦X≦0.3, 0.001≦Y≦0.8, 0.1≦Z≦0.8, and X+Y+Z=1.

    摘要翻译： 非易失性存储器件包括下电极，形成在下电极上的相变材料层以与下电极电连接;以及上电极，形成在相变材料层上，以便电 连接到相变材料层。 相变材料层包括含有由式（I）A（IIXIIIYIVZ）（1-A）表示的组合物的相变材料，其中I为As和Se中的至少一种，II为Ge中的至少一种 ，Si和Sn，III是Sb和Bi中的至少一种，IV是Te和Se中的至少一种，并且其中0.001和nlE; A和nlE; 0.3,0.001和nlE; X和nlE; 0.3,0.001和nlE; Y和nlE; 0.8,0.1 ＆nlE; Z＆nlE; 0.8和X + Y + Z = 1。