公开(公告)号：US20070048631A1

公开(公告)日：2007-03-01

申请号：US11504049

申请日：2006-08-15

申请人： Masamitsu Itoh

发明人： Masamitsu Itoh

IPC分类号： G03C5/00 ,  G21K5/00 ,  G03F1/00

CPC分类号： G03F1/72

摘要： According to an aspect of the invention, there is provided a mask defect repairing method of repairing a defect caused by a foreign object on a light transmissive photomask, the method including moving the foreign object on a light transmission section of the light transmissive photomask using a manipulator, and placing the foreign object on a shielding section of the light transmissive photo mask.

摘要翻译： 根据本发明的一个方面，提供了一种在透光光掩模上修复由异物引起的缺陷的掩模缺陷修复方法，所述方法包括使用光透射光掩模将异物移动到透光光掩模的光透射部分 操纵器，并将异物放置在透光光罩的屏蔽部分上。

公开(公告)号：US20060172205A1

公开(公告)日：2006-08-03

申请号：US11342677

申请日：2006-01-31

申请人： Hideaki Sakurai ,  Tooru Shibata ,  Masato Saito ,  Masamitsu Itoh

发明人： Hideaki Sakurai ,  Tooru Shibata ,  Masato Saito ,  Masamitsu Itoh

IPC分类号： G03F1/00 ,  G03C5/00

CPC分类号： G03F7/70625 ,  G03F7/70558 ,  Y10S430/143

摘要： A pattern forming method includes developing a resist film on a main surface of a substrate by flowing a developing solution on the film to form a resist pattern, the developing the film including partitioning the surface into M (≧2) regions and determining correction exposure dose for each of the M region, the determining the correction exposure dose including determining a correction exposure dose for an i-th (1≦i≦M) region so that an actual pattern dimension of a pattern on the i-th region matches a design pattern dimension based on a pattern opening ratio of a pattern to be formed on the substrate, the pattern being located on a region which is further upstream region than the i-th region with respect to an upstream direction of a flow of the solution, and forming the pattern by etching the substrate using the resist pattern as a mask.

公开(公告)号：US5188706A

公开(公告)日：1993-02-23

申请号：US494397

申请日：1990-03-16

申请人： Masaru Hori ,  Masamitsu Itoh

发明人： Masaru Hori ,  Masamitsu Itoh

IPC分类号： B81B3/00 ,  B81C1/00 ,  G03F1/22 ,  G03F1/68 ,  G03F1/80 ,  H01L21/027 ,  H01L21/30

CPC分类号： G03F1/22 ,  B81C1/00666 ,  B81C2201/017

摘要： An X-ray mask can be manufactured by forming an X-ray transmitting thin film on a mask support, forming an X-ray absorber thin film on the X-ray transmitting thin film, and patterning the X-ray absorber thin film with a desired pattern to form an X-ray absorber pattern. Prior to the patterning, at least one inert element with an atomic number greater than that of neon is ion-implanted in the X-ray absorber thin film.

公开(公告)号：US09808841B2

公开(公告)日：2017-11-07

申请号：US14342718

申请日：2012-06-22

申请人： Yoshihito Kobayashi ,  Masamitsu Itoh ,  Taro Inada ,  Jun Watanabe

发明人： Yoshihito Kobayashi ,  Masamitsu Itoh ,  Taro Inada ,  Jun Watanabe

IPC分类号： B08B7/00 ,  G03F7/20

CPC分类号： B08B7/0028 ,  B08B7/0014 ,  G03F7/707 ,  G03F7/70925

摘要： There is provided a reticle chuck cleaner A for cleaning a reticle chuck of an apparatus, as a reticle chuck cleaner that allows easy cleaning of a reticle chuck in a vacuum chamber of an apparatus without exposing the chamber to the atmosphere and contributes to improvement of the operating ratio of the apparatus, including: an adhesive layer 1 to be adhered to a chuck region of the reticle chuck; a support layer 2 laminated on the adhesive layer 1; and a substrate 3 having a shape capable of being carried to the reticle chuck, the support layer 2 and the substrate 3 being partially bonded together in an adhesive region 41 of a partial adhesive layer 4.

公开(公告)号：US09377682B2

公开(公告)日：2016-06-28

申请号：US13423043

申请日：2012-03-16

申请人： Shingo Kanamitsu ,  Masamitsu Itoh

发明人： Shingo Kanamitsu ,  Masamitsu Itoh

IPC分类号： H01L29/06 ,  H01L21/30 ,  G03F7/00 ,  B82Y10/00 ,  B82Y40/00

CPC分类号： G03F7/0002 ,  B82Y10/00 ,  B82Y40/00

摘要： According to one embodiment, a template substrate includes a substrate and a mask. The substrate includes a mesa region formed in a central portion of an upper surface of the substrate. The mesa region is configured to protrude more than a region of the substrate around the mesa region. An impurity is introduced into an upper layer portion of a partial region of a peripheral portion of the mesa region. The mask film is provided on the upper surface of the substrate.

摘要翻译： 根据一个实施例，模板衬底包括衬底和掩模。 衬底包括形成在衬底的上表面的中心部分中的台面区域。 所述台面区域被构造为在所述台面区域周围突出多于所述基板的区域。 杂质被引入到台面区域的周边部分的部分区域的上层部分中。 掩模膜设置在基板的上表面上。

公开(公告)号：US08669522B2

公开(公告)日：2014-03-11

申请号：US13416282

申请日：2012-03-09

申请人： Shinji Yamaguchi ,  Masato Naka ,  Hiroyuki Kashiwagi ,  Masamitsu Itoh

发明人： Shinji Yamaguchi ,  Masato Naka ,  Hiroyuki Kashiwagi ,  Masamitsu Itoh

IPC分类号： H01J37/28

CPC分类号： G03F1/84 ,  G01N23/225 ,  G01N2021/95676

摘要： According to one embodiment, a mask inspection apparatus includes a decompression chamber, a holder, a light irradiation unit, a detection unit, an electrode, and a control unit. The holder is provided in the decompression chamber and holds a mask. The light irradiation unit irradiates a major surface of the mask held by the holder with a light. The detection unit is provided in the decompression chamber to detect electrons generated when the major surface of the mask is irradiated with the light. The electrode is provided between the holder and the detection unit and guides the electrons in a direction from the holder toward the detection unit. The control unit compares a detection result of the electrons detected by the detection unit with a reference value.

摘要翻译： 根据一个实施例，掩模检查装置包括减压室，保持器，光照射单元，检测单元，电极和控制单元。 保持器设置在减压室中并保持面罩。 光照射单元用光照射由保持器保持的面罩的主表面。 检测单元设置在减压室中以检测当用光照射掩模的主表面时产生的电子。 电极设置在保持器和检测单元之间并且引导电子沿着保持器朝向检测单元的方向。 控制单元将由检测单元检测的电子的检测结果与参考值进行比较。

公开(公告)号：US20120244714A1

公开(公告)日：2012-09-27

申请号：US13491641

申请日：2012-06-08

申请人： Masamitsu Itoh

发明人： Masamitsu Itoh

IPC分类号： H01L21/32

CPC分类号： G03F1/24 ,  B82Y10/00 ,  B82Y40/00 ,  G03F1/40

摘要： An exposure mask includes: an insulative substrate; a light reflecting film provided on the substrate; a light absorbing film provided on the light reflecting film and forming a pattern in a center region on the substrate; and an interconnect provided on the substrate, the light reflecting film and the light absorbing film not being provided in a frame-shaped region surrounding the center region, and the interconnect being placed so that a portion of a laminated film composed of the light reflecting film and the light absorbing film located inside the frame-shaped region is electrically connected to a portion of the laminated film located outside the frame-shaped region.

摘要翻译： 曝光掩模包括：绝缘基板; 设置在基板上的光反射膜; 设置在所述光反射膜上并在所述基板的中心区域形成图案的吸光膜; 以及设置在基板上的互连，光反射膜和光吸收膜不设置在围绕中心区域的框状区域中，并且布线被布置成使得由光反射膜构成的层叠膜的一部分 并且位于框状区域内的吸光膜与位于框状区域外的层叠膜的一部分电连接。

公开(公告)号：US08216744B2

公开(公告)日：2012-07-10

申请号：US12700457

申请日：2010-02-04

申请人： Masamitsu Itoh

发明人： Masamitsu Itoh

IPC分类号： G03F1/40

CPC分类号： G03F1/24 ,  B82Y10/00 ,  B82Y40/00 ,  G03F1/40

摘要： An exposure mask includes: an insulative substrate; a light reflecting film provided on the substrate; a light absorbing film provided on the light reflecting film and forming a pattern in a center region on the substrate; and an interconnect provided on the substrate, the light reflecting film and the light absorbing film not being provided in a frame-shaped region surrounding the center region, and the interconnect being placed so that a portion of a laminated film composed of the light reflecting film and the light absorbing film located inside the frame-shaped region is electrically connected to a portion of the laminated film located outside the frame-shaped region.

摘要翻译： 曝光掩模包括：绝缘基板; 设置在基板上的光反射膜; 设置在所述光反射膜上并在所述基板的中心区域形成图案的吸光膜; 以及设置在基板上的互连，光反射膜和光吸收膜不设置在围绕中心区域的框状区域中，并且布线被布置成使得由光反射膜构成的层叠膜的一部分 并且位于框状区域内的吸光膜与位于框状区域外的层叠膜的一部分电连接。

公开(公告)号：US08189903B2

公开(公告)日：2012-05-29

申请号：US11636631

申请日：2006-12-11

申请人： Masamitsu Itoh

发明人： Masamitsu Itoh

IPC分类号： G06K9/00

CPC分类号： G03F1/86 ,  G03F1/36 ,  G03F1/84

摘要： According to an aspect of the invention, there is provided a photomask evaluation method including, acquiring a pattern image of a photomask, generating sidewall angle data on the sidewall angle of a pattern from the pattern image, extracting a pattern outline from the pattern image to generate outline data, and running a lithographic simulation on the basis of the outline data and the sidewall angle data to calculate an exposure margin.

摘要翻译： 根据本发明的一个方面，提供了一种光掩模评估方法，包括：获取光掩模的图案图像，从图案图像生成关于图案的侧壁角度的侧壁角数据，从图案图像提取图案轮廓 生成轮廓数据，并根据轮廓数据和侧角角数据运行光刻模拟计算曝光量。

公开(公告)号：US08071263B2

公开(公告)日：2011-12-06

申请号：US12490910

申请日：2009-06-24

申请人： Ryoichi Inanami ,  Yumi Nakajima ,  Masamitsu Itoh

发明人： Ryoichi Inanami ,  Yumi Nakajima ,  Masamitsu Itoh

IPC分类号： G03F1/00 ,  G03F1/08

CPC分类号： G03F1/24

摘要： A reflective mask comprising: a reflective layer that is arranged on a surface on a side on which EUV light is irradiated and reflects the EUV light; a buffer layer containing Cr that is arranged on a side of the reflective layer on which the EUV light is irradiated and covers an entire surface of the reflective layer; and a non-reflective layer that is arranged on a side of the buffer layer on which the EUV light is irradiated and in which an absorber that absorbs the irradiated EUV light is arranged in a position corresponding to a mask pattern to be reduced and transferred onto a wafer.

摘要翻译： 一种反射掩模，包括：反射层，其被布置在其上照射有EUV光的一侧的表面上并且反射所述EUV光; 包含Cr的缓冲层，其布置在其上照射有EUV光的反射层的一侧并覆盖反射层的整个表面; 以及布置在其上照射有EUV光的缓冲层侧的非反射层，并且其中吸收被照射的EUV光的吸收体被布置在与要被还原并转移到其上的掩模图案相对应的位置 晶圆。