摘要:
A scanning circuit for a display device having an array of pixels. One embodiment of the scanning circuit includes L scan control signal lines, first logic circuits to operate on signals from M of the L scan control signal lines, flip-flop circuits communicating with the first logic circuits, N timing control signal lines, and second logic circuits coupled to operate on signal from the N timing control signal lines and the flip-flop circuits.
摘要:
A scanning circuit has L scan control signal lines to which scan control signals differing from each other are supplied, and x pulse generating circuits each of which outputs a pulse signal based on a logical computation on scan control signals supplied from m signal lines, combinations of the m signal lines differing from each other. The scan control signal lines are divided into m groups so that the m groups respectively correspond to m groups of signals supplied to the scan control signal lines. Each of at least m-1 groups among the m groups is composed of three to four scan control signals differing in phases. One scan control signal is selected from each of the m scan control signal line groups so as to constitute each combination of the m scan control signal lines for sending the scan control signals to each pulse generating circuit.
摘要:
An active-matrix image display device which includes n shift registers, analog switches for sampling video input signals and a data-signal-line driving circuit to which n series of clock signals and n.times.m series of video input signals are input, and controls the analog switches according to the result of a logic operation of output pulses from successive l stages in the shift registers. A scanning circuit without using shift registers. Here, n is an integer not smaller than one, m and l are integers not smaller than two. With the image display device, sampling of video signals is surely executed without increasing the number of shift registers. It is thus possible to reduce the size and weight of the image display device and to decrease the defect rate thereof. Moreover, the scanning circuit achieves a higher yield compared with a conventional scanning circuit using a shift register.
摘要:
In a four-valued read only storage device, each of memory cells arrayed in matrix form at intersections of word lines and bit lines has four metal oxide semiconductor (MOS) transistors. The four MOS transistors have different combinations of two channel impurity profiles and two effective channel lengths in correspondence with storage data. Either data corresponding to the channel impurity profile or data corresponding to the effective channel length is read out from a memory cell by controlling a gate voltage and a drain voltage to be applied to a selected MOS transistor in the memory cell.
摘要:
A ferroelectric memory device according to the present invention comprises a plurality of bit lines carrying data signals and voltage signals, every adjacent two of the bit lines being paired to form a plurality of bit line pairs; sense amplifiers connected to each of the bit line pairs; a plurality of memory cells for storing data, each memory cell having a first capacitor and a first switching element, the first capacitor being connected to one of the bit lines via the first switching element, wherein the first capacitor includes a capacitor insulating film, at least one portion of the capacitor insulating film being formed of a ferroelectric material; a plurality of dummy cells for storing a reference voltage, each dummy cell having a second capacitor and a second switching element, the second capacitor being connected to one of the bit lines via the second switching element, wherein the second capacitor includes the capacitor insulating film at least one portion of the capacitor insulating film being formed of a ferroelectric material; a first common electrode line for controlling a voltage to be applied to the first capacitor; a second common electrode line for controlling a voltage to be applied to the second capacitor; a first word line for controlling the first switching element; and a second word line for controlling the second switching element, wherein a plurality of the memory cells and at least one of the dummy cells are connected to each bit line.
摘要:
A semiconductor memory device of alternately-activated open bit-line architecture is provided wherein paired bit lines extend from opposite sides of sense amplifiers that are arranged in one direction and every other bit line is activated through activation of a word line intersecting the bit lines. The sense amplifiers in the neighboring first and second rows alternate with each other in a staggering manner. The bit lines extending from the sense amplifiers of the first row in a first direction and the bit lines extending from the sense amplifiers in the opposite, second direction constitute a bit line group between the first and second rows. Word lines and dummy word lines intersect the bit line group. In operation, signals opposite in phase to each other are applied to a selected word line and a corresponding dummy word line from a control section so that memory cells connected to the selected word line are electrically connected with the bit lines while the dummy cells connected with the same bit lines are electrically disconnected from these bit lines.
摘要:
In each of the sense amplifiers of a DRAM, the common source terminal of pull-down transistors which are connected to a bit line pair is connected to a discharge line through first and second current paths. One end of the discharge line is grounded. The first and second current paths are provided with first and second switches, respectively. The first and second switches are independently controlled by a different signal. The first current path is further provided with a third switch. The third switch is turned on when the potentials of both of the bit lines are greater than a threshold, and turned off when one of the potentials is not greater than the threshold.
摘要:
Disclosed herein are optically active biphenol derivatives represented by the following formulas (1) and (2), a method for optically resolving a biphenol derivative represented by formula (2′), a production method of an optically active biphenol derivative (1) comprising a step for reacting a Brønsted acid with a biphenol derivative (2), and a production method of an optically active biphenol derivative (3) comprising a step for reacting a Lewis acid with an optically active biphenol derivative (1) or an optically active biphenol derivative (2).
摘要:
An example control signal generating circuit CTL for controlling the writing into pixels PIX instructs a data signal line drive circuit SD2, which is for driving pixels in a non-display area, to write a voltage VB or a voltage VW which are for non-displaying, not only in the first frame but also once in a predetermined number of frames. In other words, the pixels in the display area are refreshed at intervals longer than those in the case of refreshing the pixels in each frame. Thus, even if the mobility of an active element is high and the leak current on the occasion of OFF-state is large, or even if a large amount of electric charge is accumulated because of the photoelectric effect due to the use of a backlight, it is possible to prevent unnecessary displaying on the display area, which is caused because the writing into the pixels in the display area influences on the pixels in the non-display area, and hence it is possible to improve the quality of partial displaying, while restraining the power consumption.
摘要:
It is to provide a novel optically active dibenzazepine derivative having a high utility value as an asymmetric phase-transfer catalyst. It is an optically active 6,7-dihydro-5H-dibenzo[c,e]azepine derivative represented by the following formula (1′), (wherein R represents a divalent organic group for cross-linking the 1st position and the 11th position; R1 and R2 are the same or different, and represent a hydrogen atom, halogen atom, or organic group, or R1 and R2 together represent a divalent organic group; R3′and R4′ are the same or different and represent a monovalent organic group, or R3′ and R4′ together form an organic group that forms a cyclic structure comprising an onium nitrogen atom; Ar represents a monovalent organic group; * represents optical activity, i.e., that one axially asymmetric isomer is present in excess of the other axially asymmetric isomer with respect to a bond axis that constitutes the biphenyl structure of the compound; and X− represents a counter anion).
摘要翻译:提供作为不对称相转移催化剂的具有高效用价值的新颖的光学活性二苯并氮杂衍生物。 它是由下式(1')表示的光学活性的6,7-二氢-5H-二苯并[c,e]吖庚因衍生物,其中R表示用于交联第1位和第11位的二价有机基 R 1和R 2相同或不同,表示氢原子,卤素原子或有机基团,或者R 1和R 2一起表示二价有机基团; R 3'和R 4'相同或不同,表示一价有机基团 或R3'和R4'一起形成形成包含鎓氮原子的环状结构的有机基团; Ar表示一价有机基团; *表示光学活性,即一种轴向不对称异构体存在于另一种轴向 相对于构成化合物的联苯结构的键轴的不对称异构体; X-表示抗衡阴离子)。