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76 条记录 (耗时 0.04 秒)

    Magnetic multilayered film current element
    41.
    发明授权
    Magnetic multilayered film current element 有权
    磁性多层膜电流元件

    公开(公告)号：US08111488B2

    公开(公告)日：2012-02-07

    申请号：US12155924

    申请日：2008-06-11

    申请人： Yoshihiko Fuji ,  Hideaki Fukuzawa ,  Hiromi Yuasa

    发明人： Yoshihiko Fuji ,  Hideaki Fukuzawa ,  Hiromi Yuasa

    IPC分类号： G11B5/39

    CPC分类号： G11B5/3983 ,  B82Y25/00 ,  G01R33/093 ,  G01S7/032 ,  G01S13/34 ,  G01S2013/936 ,  G11B5/3903 ,  G11B5/398 ,  G11B5/66 ,  G11C11/16 ,  H01L27/224 ,  H01L27/228 ,  H01L43/08

    摘要： A magnetic multilayered film current element includes: at least one magnetic layer; at least one film structure containing a first insulating layer where a first opening is formed, a second insulating layer where a second opening is formed and a conductor disposed between the first insulating layer and the second insulating layer under the condition that a distance “A” between the first insulating layer and a portion of the second insulating layer at a position of the second opening is set larger than a closest distance “B” between the first insulating layer and the second insulating layer; and a pair of electrodes for flowing current to a magnetic multilayered film containing the at least one magnetic layer and the at least one film structure along a stacking direction of the magnetic multilayered film.

    摘要翻译： 磁性多层膜电流元件包括：至少一个磁性层; 至少一个膜结构，其包含形成第一开口的第一绝缘层，形成第二开口的第二绝缘层和设置在第一绝缘层和第二绝缘层之间的导体，在距离“A” 在第一绝缘层和第二绝缘层的位于第二开口的位置处的第一绝缘层和第二绝缘层的一部分之间的距离设定为大于第一绝缘层和第二绝缘层之间的最近距离“B” 以及一对电极，用于沿着磁性多层膜的堆叠方向将电流流向含有至少一个磁性层和至少一个膜结构的磁性多层膜。

    Method of manufacturing a magneto-resistance effect element
    44.
    发明授权
    Method of manufacturing a magneto-resistance effect element 失效
    制造磁阻效应元件的方法

    公开(公告)号：US08671554B2

    公开(公告)日：2014-03-18

    申请号：US13419198

    申请日：2012-03-13

    申请人： Hideaki Fukuzawa ,  Hiromi Yuasa ,  Yoshihiko Fuji

    发明人： Hideaki Fukuzawa ,  Hiromi Yuasa ,  Yoshihiko Fuji

    IPC分类号： G11B5/17 ,  H04R31/00

    CPC分类号： B25G1/102

    摘要： An example method for manufacturing a magneto-resistance effect element having a magnetic layer, a free magnetization layer, and a spacer layer includes forming a first metallic layer and forming, on the first metallic layer, a second metallic layer. A first conversion treatment is performed to convert the second metallic layer into a first insulating layer and to form a first metallic portion penetrating through the first insulating layer. A third metallic layer is formed on the first insulating layer and the first metallic portion. A second conversion treatment is performed to convert the third metallic layer into a second insulating layer and to form a second metallic portion penetrating through the second insulating layer.

    摘要翻译： 用于制造具有磁性层，自由磁化层和间隔层的磁阻效应元件的示例性方法包括形成第一金属层，并在第一金属层上形成第二金属层。 执行第一转换处理以将第二金属层转换成第一绝缘层并形成贯穿第一绝缘层的第一金属部分。 在第一绝缘层和第一金属部分上形成第三金属层。 执行第二转换处理以将第三金属层转换成第二绝缘层并形成贯穿第二绝缘层的第二金属部分。

    Magnetoresistive element having free layer magnetic compound expressed by M1M2O
    45.
    发明授权
    Magnetoresistive element having free layer magnetic compound expressed by M1M2O 有权
    具有由M1M2O表示的自由层磁性化合物的磁阻元件

    公开(公告)号：US08184410B2

    公开(公告)日：2012-05-22

    申请号：US11902657

    申请日：2007-09-24

    申请人： Yoshihiko Fuji ,  Hideaki Fukuzawa ,  Hiromi Yuasa

    发明人： Yoshihiko Fuji ,  Hideaki Fukuzawa ,  Hiromi Yuasa

    IPC分类号： G11B5/39 ,  G11C11/16

    CPC分类号： G11B5/3983 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3906 ,  G11B5/398 ,  G11C11/161 ,  H01F10/187 ,  H01F10/3254 ,  H01F10/3259 ,  H01F10/3263 ,  H01F10/3272 ,  Y10T428/1121

    摘要： An example magnetoresistive element includes a first magnetic layer whose magnetization direction is substantially pinned toward one direction; a second magnetic layer whose magnetization direction is changed in response to an external magnetic field; and a spacer layer provided between the first magnetic layer and the second magnetic layer. At least one of the first magnetic layer and the second magnetic layer has a magnetic compound that is expressed by M1aM2bXc(where 5≦a≦68, 10≦b≦73, and 22≦c≦85). M1 is at least one element selected from the group consisting of Co, Fe, and Ni. M2 is at least one element selected from the group consisting of Ti, V, Cr, and Mn. X is at least one element selected from the group consisting of N, O, and C.

    摘要翻译： 示例性磁阻元件包括其磁化方向基本上朝向一个方向固定的第一磁性层; 其磁化方向响应于外部磁场而改变的第二磁性层; 以及设置在第一磁性层和第二磁性层之间的间隔层。 第一磁性层和第二磁性层中的至少一个具有由M1aM2bXc（其中5＆nlE; a＆nlE; 68,10＆amp; nlE; b＆nlE; 73和22＆nlE; c＆nlE; 85）表示的磁性化合物。 M1是选自Co，Fe和Ni中的至少一种元素。 M2是选自Ti，V，Cr和Mn中的至少一种元素。 X是选自N，O和C中的至少一种元素。

    Magnetoresistive element having free and/or pinned layer magnetic compound expressed by M1M2O
    50.
    发明授权
    Magnetoresistive element having free and/or pinned layer magnetic compound expressed by M1M2O 有权
    具有由M1M2O表示的游离和/或钉扎层磁性化合物的磁阻元件

    公开(公告)号：US08351164B2

    公开(公告)日：2013-01-08

    申请号：US13454846

    申请日：2012-04-24

    申请人： Yoshihiko Fuji ,  Hideaki Fukuzawa ,  Hiromi Yuasa

    发明人： Yoshihiko Fuji ,  Hideaki Fukuzawa ,  Hiromi Yuasa

    IPC分类号： G11B5/39 ,  G11C11/16

    CPC分类号： G11B5/3983 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3906 ,  G11B5/398 ,  G11C11/161 ,  H01F10/187 ,  H01F10/3254 ,  H01F10/3259 ,  H01F10/3263 ,  H01F10/3272 ,  Y10T428/1121

    摘要： An example magnetoresistive element includes a first magnetic layer whose magnetization direction is substantially pinned toward one direction; a second magnetic layer whose magnetization direction is changed in response to an external magnetic field; and a spacer layer. At least one of the first magnetic layer and the second magnetic layer includes a magnetic compound layer including a magnetic compound that is expressed by M1aM2bOc (where 5≦a≦68, 10≦b≦73, and 22≦c≦85). M1 is at least one element selected from the group consisting of Co, Fe, and Ni. M2 is at least one element selected from the group consisting of Ti, V, and Cr.

    摘要翻译： 示例性磁阻元件包括其磁化方向基本上朝向一个方向固定的第一磁性层; 其磁化方向响应于外部磁场而改变的第二磁性层; 和间隔层。 第一磁性层和第二磁性层中的至少一个包括由M1aM2bOc（其中5和nlE; a＆nlE; 68,10和nlE; b＆nlE; 73和22＆nlE; c＆nlE; 85）表示的磁性化合物的磁性化合物层。 M1是选自Co，Fe和Ni中的至少一种元素。 M2是选自Ti，V和Cr中的至少一种元素。