公开(公告)号：US5336300A

公开(公告)日：1994-08-09

申请号：US14998

申请日：1993-02-08

申请人： Akira Yoshino ,  Hiromi Kiyama ,  Nobuhiko Mihoichi

发明人： Akira Yoshino ,  Hiromi Kiyama ,  Nobuhiko Mihoichi

IPC分类号： B01D53/12 ,  B01D53/08

CPC分类号： B01D53/08 ,  B01D2253/108 ,  B01D2256/10 ,  B01D2256/12 ,  B01D2257/102 ,  B01D2259/40005 ,  B01D2259/40081 ,  B01D2259/4009 ,  B01D53/0446 ,  B01D53/0462

摘要： A method and an apparatus for separating a specific component gas from a mixed gas, wherein granular adsorbent is held in a sealed space in a layered state, easily adsorptive gas is adsorbed to the granular adsorbent by blowing material mixed gas into the adsorbent layers and contacting the granular adsorbent with a counter-current of material gas, and the granular adsorbent is transferred gradually out of the sealed space, and reactivated by desorbing the easily adsorptive gas from the granular adsorbent, and the reactivated granular adsorbent is returned to the inside of the sealed space to be reused. Therefore, frequent actions of opening and closing valves are unnecessary, so that it is possible to separate and produce excellent product gas with high purity.

摘要翻译： 一种用于从混合气体中分离特定组分气体的方法和装置，其中颗粒状吸附剂以分层状态保持在密封空间中，容易吸附的气体通过将材料混合气体吹入吸附剂层而吸附到颗粒吸附剂上， 具有逆流材料气体的粒状吸附剂和粒状吸附剂逐渐从密封空间中移出，并通过从颗粒吸附剂中解吸容易吸附的气体而再活化，再活化的粒状吸附剂返回到 密封空间要重复使用。 因此，不需要开阀和关闭阀的频繁动作，因此能够分离和制造高纯度的优异的产品气体。

公开(公告)号：US5254181A

公开(公告)日：1993-10-19

申请号：US727614

申请日：1991-07-10

申请人： Akira Yoshino ,  Masaki Tahara ,  Haruo Senbokuya ,  Kenzo Kitano ,  Teruo Minato

发明人： Akira Yoshino ,  Masaki Tahara ,  Haruo Senbokuya ,  Kenzo Kitano ,  Teruo Minato

IPC分类号： C23C8/34

CPC分类号： C23C8/34

摘要： This invention relates to a method for forming a uniform, deep nitride layer on and in steel works at low cost, wherein a steel work is fluorided in heated condition in an atmosphere of a mixed gas composed of fluorine gas and inert gas and, then, nitrided in heated condition in an atmosphere of nitriding gas.

摘要翻译： 本发明涉及一种在低成本的钢铁工件上形成均匀的深氮化物层的方法，其中在由氟气和惰性气体组成的混合气体的气氛中，在加热条件下对工件进行氟化， 在氮化气体气氛中在加热条件下氮化。

公开(公告)号：US5073512A

公开(公告)日：1991-12-17

申请号：US512291

申请日：1990-04-20

申请人： Akira Yoshino

发明人： Akira Yoshino

IPC分类号： H01L21/336 ,  H01L21/74 ,  H01L29/10

CPC分类号： H01L29/66583 ,  H01L21/74 ,  H01L29/1083 ,  H01L29/66537 ,  Y10S148/026

摘要： On a semiconductor substrate, a thin insulating film to be used as a gate insulating film, a thin polysilicon film and a thick mask layer are formed in the order and an opening for gate electrode formation is formed in the mask layer. After an ion implantation of impurities having the same conductivity type as that of the substrate is performed thereto through the opening to form, in the substrate, an impurity region having the same conductivity type as and impurity density larger than that of the substrate, the opening is filled with electrically conductive material. Thereafter, the mask layer is removed and an exposed first polysilicon film is removed to form a gate electrode comprising the conductive material and an underlying portion of the polysilicon film. Then, source region and drain region are formed in self-aligned manner with respect to the gate electrode.

摘要翻译： 在半导体基板上，按照顺序形成用作栅极绝缘膜的薄绝缘膜，薄多晶硅膜和厚掩模层，并且在掩模层中形成用于栅电极形成的开口。 在离子注入后，通过开口对其进行与衬底相同的导电类型的杂质的离子注入，在衬底中形成具有与衬底相同的导电类型和杂质密度的杂质区，开口 填充有导电材料。 此后，去除掩模层，并且去除暴露的第一多晶硅膜以形成包括导电材料和多晶硅膜的下面部分的栅电极。 然后，相对于栅电极以自对准的方式形成源极区域和漏极区域。

公开(公告)号：US4979465A

公开(公告)日：1990-12-25

申请号：US457140

申请日：1989-12-26

申请人： Akira Yoshino ,  Kenji Okumura ,  Yoshinori Ohmori ,  Toshiharu Ohnishi

发明人： Akira Yoshino ,  Kenji Okumura ,  Yoshinori Ohmori ,  Toshiharu Ohnishi

IPC分类号： C23C16/44 ,  C23C16/455 ,  C30B25/14

CPC分类号： C23C16/45514 ,  C23C16/455 ,  C23C16/45591 ,  C30B25/14

摘要： The present invention relates to an apparatus for producing semiconductors utilizing vacuum chemical epitaxy (VCE) method.Said VCE method has a high utilization efficiency of reactant gas and can finish the surface of a semiconductor layer formed on the surface of a substrate smoothly in comparision with a conventional Metalorganic Chemical Vapor Deposition Method(MOCVD). However, in case of forming semiconductor layer on the surface of a substrate with a large area, it is impossible to form homogeneous semiconductor layer.According to the present invention, a reactant gas dispersing chamber is disposed under a reaction chamber disposed within a vacuum chamber, the both chambers are communicated by a plurality of communicating holes, a feeding pipe for supplying reactant gas is extended into the reactant gas dispersing chamber, an end opening thereof is faced downward and a color portion is formed in parallel at the circumference of the end opening. Said reactant gas is blown off downward from the end opening of the feeding pipe and dispersed in parallel along the collar portion and dispersed homogeneously in the reactant gas dispersing chamber, and in the state, is introduced to the reaction chamber via said communicating holes. Therefore, even if on a substrate with a large area, homogeneous semiconductor layer can be formed.

公开(公告)号：US4951603A

公开(公告)日：1990-08-28

申请号：US243006

申请日：1988-09-12

申请人： Akira Yoshino ,  Yoshinori Ohmori ,  Toshiharu Ohnishi

发明人： Akira Yoshino ,  Yoshinori Ohmori ,  Toshiharu Ohnishi

IPC分类号： C23C16/44 ,  C23C16/455 ,  C23C16/54 ,  H01L21/00

CPC分类号： C23C16/45574 ,  C23C16/45508 ,  C23C16/45517 ,  C23C16/45565 ,  C23C16/54 ,  H01L21/67017

摘要： Apparatus for continuously producing semiconductor films on substrates in a vacuum chamber. A plurality of reaction chambers are provided within the vacuum chamber, substrates are supported by a top plate and transferred to each reaction chamber, which are filled with a certain reactant gas mixture while the substrates are heated from above the reaction chamber. Continuous treatment of the substrates is provided with an increase in reactant gas utilization efficiency. Disturbance of reactant gas flow by thermal convection is prevented and semiconductor layers having smooth surfaces are formed.

摘要翻译： 用于在真空室中在基板上连续生产半导体膜的装置。 多个反应室设置在真空室内，基板由顶板支撑并转移到每个反应室，每个反应室填充有特定的反应气体混合物，同时从反应室上方加热基板。 随着反应物气体的利用效率的提高，连续处理基板。 通过热对流来防止反应气体流动的干扰，并形成具有平滑表面的半导体层。

公开(公告)号：US4731102A

公开(公告)日：1988-03-15

申请号：US53293

申请日：1987-04-07

申请人： Akira Yoshino

发明人： Akira Yoshino

IPC分类号： F25J3/04 ,  F25J3/00

CPC分类号： F25J3/04181 ,  F25J3/04018 ,  F25J3/0409 ,  F25J3/04157 ,  F25J3/04212 ,  F25J3/04218 ,  F25J3/04254 ,  F25J3/04412 ,  F25J3/04636 ,  F25J3/0486 ,  F25J3/04866 ,  F25J2200/06 ,  F25J2205/32 ,  F25J2205/34 ,  F25J2205/60 ,  F25J2205/70 ,  F25J2210/50 ,  F25J2230/04 ,  F25J2235/50 ,  F25J2250/40 ,  F25J2250/50 ,  Y10S62/913

摘要： The invention provides an apparatus for production of highly pure oxygen gas by cryogenic liquefaction and separation of air which does not include an expansion turbine which is known to frequently cause operation troubles. The apparatus comprises an oxygen gas production apparatus comprising an air compression means for compressing air from an outside source, a purification means for removing carbon dioxide gas and water vapor from the air compressed by said air compression means, a heat exchange means for chilling the compressed air from said purification means to a cryogenic temperature, a fractionation column for liquefying and fractionating the compressed air chilled to a cryogenic temperature by said heat exchange means and holding nitrogen in gaseous state and oxygen in liquid state, a liquid oxygen storage means for receiving liquid oxygen from an outside source and storing the same, a line for continuously introducing into said fractionation column the liquid oxygen from said liquid oxygen storage means in lieu of the generated refrigeration from a cold heat generating expansion means, an oxygen gas withdrawal line for guiding the liquid oxygen within said fractionation column as a refrigerant to said heat exchange means and withdrawing the gasified oxygen produced by heat exchange as a product oxygen gas, and a pressurizing means for pressurizing the product oxygen gas withdrawn from said oxygen withdrawal line.

摘要翻译： PCT No.PCT / JP86 / 00409 Sec。 371日期：1987年4月7日 102（e）日期1987年4月7日PCT申请日1986年8月8日PCT公布。 第WO87 / 01184号公报 日本1987年2月26日。本发明提供了一种用于通过低温液化和分离空气来生产高纯氧气的装置，其不包括已知经常引起操作困难的膨胀涡轮机。 该装置包括氧气制备装置，包括用于压缩来自外部源的空气的空气压缩装置，用于从由所述空气压缩装置压缩的空气中去除二氧化碳气体和水蒸汽的净化装置，用于冷却压缩的 从所述净化装置到低温的空气，用于液化和分馏通过所述热交换装置冷却至低温的压缩空气并保持处于液态的氮气和液态氧的分馏塔，用于接收液体的液氧储存装置 来自外部源的氧气并存储在所述分馏塔中，来自所述液体氧气存储装置的液氧代替来自冷热产生膨胀装置的所产生的冷冻，用于引导 所述分馏塔内的液氧作为制冷剂 所述热交换装置和抽出通过热交换产生的气化氧作为产物氧气;以及加压装置，用于对从所述除氧管线排出的产物氧气进行加压。

公开(公告)号：US09893378B2

公开(公告)日：2018-02-13

申请号：US13881553

申请日：2011-10-28

申请人： Naoki Matsuoka ,  Takehiro Koga ,  Hitoshi Shobukawa ,  Akira Yoshino

发明人： Naoki Matsuoka ,  Takehiro Koga ,  Hitoshi Shobukawa ,  Akira Yoshino

IPC分类号： H01M10/056 ,  H01M10/052 ,  H01M10/0567 ,  H01M10/0568 ,  H01M10/0569 ,  H01M10/0525

CPC分类号： H01M10/056 ,  H01M10/052 ,  H01M10/0525 ,  H01M10/0567 ,  H01M10/0568 ,  H01M10/0569 ,  H01M2300/0028

摘要： The non-aqueous electrolyte solution of the present invention is a non-aqueous electrolyte solution comprising acetonitrile and a lithium salt, wherein the anion of the lithium salt has a LUMO (lowest unoccupied molecular orbital) energy in the range of −2.00 to 4.35 eV, and a HOMO (highest occupied molecular orbital) energy in the range of −5.35 to −2.90 eV.

公开(公告)号：US09562533B2

公开(公告)日：2017-02-07

申请号：US13882259

申请日：2011-09-14

申请人： Taketo Johchi ,  Shingo Kunitani ,  Akira Yoshino

发明人： Taketo Johchi ,  Shingo Kunitani ,  Akira Yoshino

IPC分类号： F04D7/02 ,  F04D7/00 ,  F04B15/08 ,  F04D29/58

CPC分类号： F04D7/00 ,  F04B15/08 ,  F04D7/02 ,  F04D13/0653 ,  F04D13/08 ,  F04D29/5893

摘要： A cryogenic pump for liquefied gases is provided, which shortens precooling time, has a small loss of cryogenic liquefied gas, excels in pump efficiency, and is advantageous in cost. A motor 1 and an impeller 2 are coupled by a shaft 3 for transmitting a rotative drive force therebetween, and the motor 1 is arranged on an upper side and the impeller 2 is arranged on a lower side. The motor 1 and the impeller 2 exist in an enclosed space 14 where they are communicated with each other and into which the cryogenic liquefied gas is introduced. A heat adjusting unit 11 is provided between the motor 1 and the impeller 2, the heat adjusting unit maintaining existence of the impeller 2 in a liquid phase of the cryogenic liquefied gas and maintaining existence of the motor 1 in a gas phase of the cryogenic liquefied gas. Thus the submerging of the motor 1 in the liquid becomes unnecessary, whereby the precooling time can be reduced remarkably and the loss of cryogenic liquefied gas due to vaporization caused by the submerging can be reduced, and in addition, the motor 1 itself can be configured at a comparatively low cost.

摘要翻译： 提供了一种用于液化气体的低温泵，其缩短预冷时间，低温液化气体的损失小，泵效率优异，成本有利。 马达1和叶轮2通过轴3联接，用于传递其间的旋转驱动力，马达1布置在上侧，叶轮2布置在下侧。 电动机1和叶轮2存在于封闭空间14中，它们彼此连通并且引入低温液化气体。 在马达1和叶轮2之间设置有热调节单元11，该热调节单元保持叶轮2在低温液化气体的液相中的存在，并且保持马达1在低温液化气相中的存在 加油站。 因此，电动机1在液体中的浸没变得不必要，从而可以显着降低预冷时间，并且可以减少由浸没引起的汽化引起的低温液化气体的损失，另外，也可以构成电动机1本身 成本相对较低。

公开(公告)号：US20130224535A1

公开(公告)日：2013-08-29

申请号：US13881553

申请日：2011-10-28

申请人： Naoki Matsuoka ,  Takehiro Koga ,  Hitoshi Shobukawa ,  Akira Yoshino

发明人： Naoki Matsuoka ,  Takehiro Koga ,  Hitoshi Shobukawa ,  Akira Yoshino

IPC分类号： H01M10/056 ,  H01M10/0525

CPC分类号： H01M10/056 ,  H01M10/052 ,  H01M10/0525 ,  H01M10/0567 ,  H01M10/0568 ,  H01M10/0569 ,  H01M2300/0028

摘要： The non-aqueous electrolyte solution of the present invention is a non-aqueous electrolyte solution comprising acetonitrile and a lithium salt, wherein the anion of the lithium salt has a LUMO (lowest unoccupied molecular orbital) energy in the range of −2.00 to 4.35 eV, and a HOMO (highest occupied molecular orbital) energy in the range of −5.35 to −2.90 eV.

摘要翻译： 本发明的非水电解液是包含乙腈和锂盐的非水电解质溶液，其中锂盐的阴离子具有-2.00〜4.35eV范围内的LUMO（最低未占分子轨道）能量 ，以及在-5.35至-2.90eV范围内的HOMO（最高占据分子轨道）能量。

公开(公告)号：US07705384B2

公开(公告)日：2010-04-27

申请号：US11392907

申请日：2006-03-30

申请人： Akira Yoshino

发明人： Akira Yoshino

IPC分类号： H01L29/423

CPC分类号： H01L29/7923 ,  H01L21/28282 ,  H01L29/4232 ,  H01L29/66833

摘要： A non-volatile storage element 100 has a silicon substrate 102, a first memory region 106a composed of a first lower silicon oxide film 108a, a first silicon nitride film 110a, and a first upper layer silicon oxide film 112a provided in this order, a second memory region 106b composed of a second lower layer silicon oxide film 108b, a second silicon nitride film 110b, and a second upper layer silicon oxide film 112b provided in this order, and a first control gate 114 and a second control gate 116 arranged on the first memory region 106a and the second control gate 116, respectively, on the silicon substrate 102. The silicon nitride film 110 is provided so as to be horizontal in a direction within a substrate plane.

摘要翻译： 非易失性存储元件100具有硅衬底102，由依次设置的第一下部氧化硅膜108a，第一氮化硅膜110a和第一上部氧化硅膜112a构成的第一存储区域106a， 由依次设置的第二下层氧化硅膜108b，第二氮化硅膜110b和第二上层氧化硅膜112b构成的第二存储区域106b，以及配置在第二存储区域106b上的第一控制栅极114和第二控制栅极116 第一存储区域106a和第二控制栅极116分别在硅衬底102上。氮化硅膜110被设置为在衬底平面内的方向上是水平的。