公开(公告)号：US6137111A

公开(公告)日：2000-10-24

申请号：US84952

申请日：1998-05-28

申请人： Akio Yamada ,  Satoru Sagou ,  Hitoshi Watanabe ,  Satoru Yamazaki ,  Kiichi Sakamoto ,  Manabu Ohno ,  Kenichi Kawakami ,  Katsuhiko Kobayashi

发明人： Akio Yamada ,  Satoru Sagou ,  Hitoshi Watanabe ,  Satoru Yamazaki ,  Kiichi Sakamoto ,  Manabu Ohno ,  Kenichi Kawakami ,  Katsuhiko Kobayashi

IPC分类号： G03F1/00 ,  G03F1/20 ,  H01J37/304 ,  H01J37/317 ,  G03F9/00 ,  H01J37/00

CPC分类号： B82Y10/00 ,  B82Y40/00 ,  G03F1/86 ,  H01J37/3045 ,  H01J37/3174 ,  G03F1/20 ,  H01J2237/2817 ,  H01J2237/31794

摘要： A method of detecting deficiency of an aperture used in a charged-particle-beam exposure process employing at least two exposure columns is disclosed, where each of the two exposure columns passes a charged-particle beam through the aperture formed through a mask to shape a cross section of the charged-particle beam before exposing the charged-particle beam onto an object. The method includes the steps of mounting masks having the same aperture to the at least two exposure columns; scanning, in each of the at least two exposure columns, the charged-particle beam over an area containing a mark on a surface substantially at the same height as the object after passing the charged-particle beam through the same aperture; obtaining, in each of the at least two exposure columns, a signal waveform corresponding to the scan by detecting charged particles scattered by the mark; and comparing the signal waveform between the at least two exposure columns.

摘要翻译： 公开了一种检测在使用至少两个曝光柱的带电粒子束曝光工艺中使用的孔的缺陷的方法，其中两个曝光柱中的每一个通过带电粒子束穿过通过掩模形成的孔以形成 在将带电粒子束暴露在物体上之前的带电粒子束的横截面。 该方法包括以下步骤：将具有相同孔径的掩模安装到至少两个曝光柱; 在所述至少两个曝光柱中的每一个中，在将带电粒子束通过相同的孔之后，将包含在与物体基本上处于相同高度的表面上的标记的区域上的带电粒子束扫描; 在所述至少两个曝光列中的每一个中，通过检测由所述标记散射的带电粒子来获得对应于所述扫描的信号波形; 以及比较所述至少两个曝光列之间的信号波形。

公开(公告)号：US5117117A

公开(公告)日：1992-05-26

申请号：US718380

申请日：1991-06-20

申请人： Yoshihisa Oae ,  Kiichi Sakamoto ,  Akio Yamada

发明人： Yoshihisa Oae ,  Kiichi Sakamoto ,  Akio Yamada

IPC分类号： H01J37/02 ,  H01J37/18 ,  H01L21/027 ,  H01L21/30

CPC分类号： H01J37/023 ,  H01J37/18

摘要： An electron beam exposure system for writing a pattern on an object by an electron beam comprises a beam source for producing an electron beam, a beam focusing unit for focusing the electron beam on the object, a beam processing unit provided along an optical axis of the electron beam for modifying the electron beam in response to control signals, a column extending along the optical axis of the electron beam so as to surround a region that includes the object, the beam source, the beam focusing unit and the beam processing unit and for maintaining the region evacuated, and an interface element mounted on the column for supplying the control signals to said beam processing unit. The interface element comprises a ring-shaped base body of a ceramic material having first and second major surfaces, the first major surface establishing an hermetic seal to the column when the interface element is mounted thereon, one or more conductor patterns provided on the second major surface so as to extend radially from an inner circumference to an outer circumference, and an insulator film provided on the second major surface of the base body so as to bury the conductor patterns underneath. The insulator film has a substantially flat major surface and establishes an hermetic seal with the column when the interface element is mounted thereon.

摘要翻译： 用于通过电子束将图案写入物体的电子束曝光系统包括用于产生电子束的光束源，用于将电子束聚焦在物体上的光束聚焦单元，沿着光束的光轴设置的光束处理单元 用于响应于控制信号修改电子束的电子束，沿着电子束的光轴延伸的列，以便围绕包括物体的区域，光束源，光束聚焦单元和光束处理单元，并且用于 保持该区域被抽真空，以及一个安装在该列上的接口元件，用于将该控制信号提供给该光束处理单元。 界面元件包括具有第一和第二主表面的陶瓷材料的环形基体，当所述界面元件安装在其上时，所述第一主表面对所述柱形成气密密封，在所述第二主表面上提供一个或多个导体图案 表面，以便从内周向外周径向延伸，以及设置在基体的第二主表面上的绝缘膜，从而将导体图案埋在下面。 绝缘膜具有基本平坦的主表面，并且当界面元件安装在其上时，与柱形成气密密封。

公开(公告)号：US5393988A

公开(公告)日：1995-02-28

申请号：US227696

申请日：1994-04-14

申请人： Kiichi Sakamoto

发明人： Kiichi Sakamoto

IPC分类号： H01L21/30 ,  G03F1/20 ,  H01L21/027 ,  H01J37/00

CPC分类号： G03F1/20

摘要： A mask is used for exposing a desired pattern on a substrate by a charged particle beam exposure. The mask comprises a plurality of pattern groups each including a plurality of exposure patterns within an approximately rectangular region, and a plurality of position matching patterns formed at positions different from those of the exposure pattern groups, where positional relationships of each of the exposure pattern groups and the position matching patterns are predetermined and fixed.

摘要翻译： 掩模用于通过带电粒子束曝光在衬底上暴露期望的图案。 掩模包括多个图案组，每个图案组包括大致矩形区域内的多个曝光图案，以及形成在与曝光图案组不同的位置处的多个位置匹配图案，其中每个曝光图案组的位置关系 并且位置匹配图案是预定和固定的。

公开(公告)号：US5276334A

公开(公告)日：1994-01-04

申请号：US916750

申请日：1992-07-22

申请人： Akio Yamada ,  Kiichi Sakamoto ,  Kenichi Kawashima

发明人： Akio Yamada ,  Kiichi Sakamoto ,  Kenichi Kawashima

IPC分类号： H01L21/027 ,  H01J37/317 ,  H01L21/30 ,  H01J37/302

CPC分类号： B82Y10/00 ,  B82Y40/00 ,  H01J37/3174 ,  H01J2237/30411 ,  H01J2237/31776

摘要： A charged particle beam exposure method includes the steps of (a) selectively irradiating a charged particle beam on at least one selected opening forming a selected pattern of a mask which includes a plurality of openings related to a plurality of kinds of patterns so as to shape a cross section of the charged particle beam which is transmitted through the selected opening, where the area of the mask is divided into a plurality of blocks each including at least one opening which is related to one pattern, and (b) irradiating the charged particle beam which is transmitted through the selected opening of the mask onto an object surface so as to expose a desired pattern corresponding to at least a part of the pattern of the selected opening on the object surface, where the step (a) carries out first and second deflections independently of each other with respect to the charged particle beam. The first deflection deflects the charged particle beam within a first deflection range which corresponds to the size of one block and the second deflection deflects the charged particle beam within a second irradiating range which covers a plurality of blocks of the mask, so that the second deflection deflects the charged particle beam to irradiate the selected opening out of the plurality of openings of the mask and the first deflection sets the first deflection range of the charged particle beam with respect to the selected opening.

摘要翻译： 带电粒子束曝光方法包括以下步骤：（a）在至少一个选定的开口上选择性地照射带电粒子束，所述至少一个选择的开口形成掩模的选定图案，所述图案包括与多种图案相关的多个开口以形成 所述带电粒子束的透射通过所述选择的开口的横截面，其中所述掩模的面积被分成多个块，每个块包括与一个图案相关的至少一个开口，以及（b）照射所述带电粒子 光束，其通过掩模的所选择的开口透射到物体表面上，以暴露与物体表面上的所选择的开口的图案的至少一部分的至少一部分相对应的期望图案，其中步骤（a）首先执行， 相对于带电粒子束彼此独立的第二偏转。 第一偏转将带电粒子束偏转在对应于一个块的尺寸的第一偏转范围内，并且第二偏转使带电粒子束在覆盖掩模的多个块的第二照射范围内偏转，使得第二偏转 使带电粒子束偏转以将所选择的开口照射到掩模的多个开口中，并且第一偏转相对于所选择的开口设置带电粒子束的第一偏转范围。

公开(公告)号：US5148033A

公开(公告)日：1992-09-15

申请号：US769343

申请日：1991-10-02

申请人： Akio Yamada ,  Kiichi Sakamoto

发明人： Akio Yamada ,  Kiichi Sakamoto

IPC分类号： H01L21/027 ,  G03F7/20 ,  H01J37/21 ,  H01J37/302 ,  H01J37/317

CPC分类号： B82Y10/00 ,  B82Y40/00 ,  G03F7/2059 ,  H01J37/21 ,  H01J37/302 ,  H01J37/3174 ,  H01J2237/30411 ,  H01J2237/31776

摘要： An electron beam exposure device comprises an electron gun, a mask plate provided with a plurality of apertures defining corresponding patterns, each pattern having a specific shape for forming a corresponding cross-sectional shape of an electron beam composed of charged particles incident thereon and passing therethrough, deflecting means provided both on a first side of a mask plate onto which the beam is irradiated and on a second side thereof from which the beam is emitted, for deflecting the beam from an original axis thereof so as to pass through a selected one of the apertures provided on the mask plate, and for deflecting again said beam so as to return said beam to the original axis thereof, sample holding means, focus point adjusting means provided between the mask plate and the sample holding means, and control means for controlling the focus point adjusting means. The focus point adjusting means further comprises processing means for processing focus point adjusting condition data for each specific aperture pattern utilizing a specific relationship between the cross-sectional area of the aperture of each pattern and a specific focus point adjusting value for each pattern, and supplying means for supplying information of said focus point adjusting condition data thus obtained to the focus point adjusting means.

摘要翻译： 在包括电子枪（3）的电子束曝光装置中，设置有多个图案孔的掩模板（27），每个孔具有用于形成由带电粒子组成的电子束的横截面形状的预定形状 设置在所述光束照射的掩模板的第一侧表面上并且在其从其发射光束的第二侧表面上的偏转装置（5），用于使光束从其原始轴线偏转以便通过 设置在掩模板上的一个孔，并且用于再次偏转所述光束以返回到其原始轴线;样品保持装置（26）;焦点调节装置（28），设置在掩模板和 采样保持装置和用于控制对焦点调节装置的控制装置，其中焦点调节装置还设置有处理装置，用于处理具有交流的每个图案的焦点调整条件数据 利用每个图案的孔径的横截面面积和相对于每个图案的预定焦点调整值之间的预定关系来形成成形孔;以及提供装置，用于提供由此获得的所述焦点调整条件数据的信息 到焦点调整装置。

公开(公告)号：US6087048A

公开(公告)日：2000-07-11

申请号：US257538

申请日：1999-02-24

申请人： Yoshio Suzaki ,  Takayuki Sakakibara ,  Kiichi Sakamoto

发明人： Yoshio Suzaki ,  Takayuki Sakakibara ,  Kiichi Sakamoto

IPC分类号： G03F1/20 ,  H01L21/027 ,  G03F9/00

CPC分类号： G03F1/20

摘要： Disclosed is a method of producing a block mask, which is employed in an electron-beam lithography apparatus, with high precision irrespective of the size of openings. The electron-beam lithography apparatus is of a type that produces a unit pattern at a time by transmitting an electron beam through openings selected from among a plurality of kinds of openings of a block mask, links the unit pattern with a previous one, and repeats this process to delineate a desired pattern. The method consists of four steps. At the first step, a resist is applied to the surface of a substrate of a block mask. At the next step, the resist is exposed to delineate patterns of a plurality of kinds of openings. At the next step, the exposed resist is developed. At the next step, the substrate of the block mask is etched. Herein, at the step of exposing the resist to delineate the patterns of a plurality of kinds of openings, for exposing the resist to delineate a pattern of openings that are larger than a predetermined size, the perimeters of corresponding opening portions of the resist are exposed by a predetermined width. However, the insides of the corresponding opening portions remain unexposed. Once etching is completed, the perimeter of each large opening portion becomes a penetrating hole. The inside thereof is detached from the substrate of the block mask. A larger hole is thus realized. Consequently, even when the etching is carried out under the same conditions for etching performed to create small openings, large openings can be created with high precision.

摘要翻译： 公开了一种用于电子束光刻设备的块掩模的方法，其高精度地与开口的尺寸无关。 电子束光刻设备是通过从块掩模的多种开口中选择的开口传输电子束而一次产生单位图案的类型，将单元图案与先前的单元图案相链接，并重复 这个过程描绘出所需的模式。 该方法由四个步骤组成。 在第一步骤中，将抗蚀剂施加到块掩模的衬底的表面。 在下一步骤中，抗蚀剂暴露于多种开口的划线图形。 在下一步，曝光的抗蚀剂被开发。 在下一步骤中，蚀刻掩模掩模的衬底。 这里，在使抗蚀剂曝光以描绘多种开口的图案的步骤中，为了使抗蚀剂曝光以描绘大于预定尺寸的开口图案，将抗蚀剂的相应开口部分的周长暴露 以预定的宽度。 然而，相应开口部分的内部保持未曝光。 一旦蚀刻完成，每个大开口部分的周边就成为一个穿透孔。 其内部与块状掩模的基板分离。 因此实现了更大的孔。 因此，即使在相同的蚀刻条件下进行蚀刻以产生小开口，也可以以高精度产生大的开口。

公开(公告)号：US5432314A

公开(公告)日：1995-07-11

申请号：US109263

申请日：1993-08-20

申请人： Satoru Yamazaki ,  Yoshihisa Oae ,  Kiichi Sakamoto ,  Akio Yamada

发明人： Satoru Yamazaki ,  Yoshihisa Oae ,  Kiichi Sakamoto ,  Akio Yamada

IPC分类号： G03F1/20 ,  G03F1/68 ,  G03F7/20 ,  G03F9/00 ,  H01J37/317 ,  H01L21/027 ,  H01J37/04

CPC分类号： B82Y10/00 ,  B82Y40/00 ,  G03F9/70 ,  H01J37/3174 ,  H01J2237/30438 ,  H01J2237/31788 ,  H01J2237/31794

摘要： A transparent mask plate used in a charged particle beam exposure apparatus includes a base plate, an exposure pattern area, and a calibration area. The exposure pattern area is formed in the base plate and has a plurality of transparent patterns for shaping a cross section of a charged particle beam into a block pattern. The calibration area is formed in the base plate, and has a plurality of transparent patterns used for obtaining a condition for deflecting the charged particle beam. The plurality of transparent patterns formed in the calibration area are arranged at the same pitch as the plurality of transparent patterns formed in the exposure pattern area. Each of the plurality of transparent patterns formed in the calibration area corresponds to one of the plurality of transparent patterns formed in the exposure pattern area.

摘要翻译： 在带电粒子束曝光装置中使用的透明掩模板包括基板，曝光图案区域和校准区域。 曝光图案区域形成在基板中，并且具有多个透明图案，用于将带电粒子束的横截面成形为块图案。 校准区域形成在基板中，并且具有用于获得用于偏转带电粒子束的条件的多个透明图案。 形成在校准区域中的多个透明图案以与形成在曝光图案区域中的多个透明图案相同的间距排列。 形成在校准区域中的多个透明图案中的每一个对应于在曝光图案区域中形成的多个透明图案中的一个。

公开(公告)号：US5422491A

公开(公告)日：1995-06-06

申请号：US277137

申请日：1994-07-19

申请人： Kiichi Sakamoto

发明人： Kiichi Sakamoto

IPC分类号： G03F1/20 ,  H01J37/317 ,  H01J37/304

CPC分类号： H01J37/3175 ,  B82Y10/00 ,  B82Y40/00 ,  G03F1/20 ,  H01J37/3174 ,  H01J2237/31776 ,  H01J2237/31788

摘要： A charged particle beam exposure method exposes a desired exposure pattern on a substrate by a charged particle beam of a beam source and a deflection system for deflecting the charged particle beam transmitted through a mask. The method includes providing the mask having formed therein a plurality of exposure patterns and a plurality of position matching patterns, where each of the position matching patterns has a predetermined, fixed positional relationship to at least an adjacent exposure pattern in the mask, in a first step, exposing a first one of the plurality of position matching patterns in the mask at a predetermined position on the substrate by directing the charged particle beam through the selected position matching pattern in the mask and onto the predetermined position on the substrate, in a second step, detecting the irradiating position of the charged particle beam on the substrate, as directed through the first position matching pattern, in a third step, calculating an error between the predetermined position on the substrate and the irradiating position of the charged particle beam which is irradiated on the substrate through the first position matching pattern, in a fourth step, determining a correction amount for the desired exposure pattern which is adjacent to the first position matching pattern in the mask based on the calculated error, and in a fifth step, controlling the deflection system based on the correction amount so that the calculated error becomes approximately zero.

摘要翻译： 带电粒子束曝光方法通过束源的带电粒子束和用于偏转透过掩模的带电粒子束的偏转系统在衬底上暴露期望的曝光图案。 该方法包括提供其中形成有多个曝光图案和多个位置匹配图案的掩模，其中每个位置匹配图案具有与掩模中的至少相邻曝光图案的预定的固定位置关系，第一 将掩模中的多个位置匹配图案中的第一个位置曝光在基板上的预定位置处，通过将带电粒子束通过掩模中的所选择的位置匹配图案并引导到基板上的预定位置，在第二个 在第三步骤中，通过第一位置匹配图案检测基板上的带电粒子束的照射位置，计算基板上的预定位置与带电粒子束的照射位置之间的误差 通过第一位置匹配图案在基板上照射，在第四步骤中，确定 基于计算出的误差，g与掩模中的第一位置匹配图案相邻的期望曝光图案的校正量，以及在第五步骤中，基于校正量控制偏转系统，使得计算出的误差变为近似为零。

公开(公告)号：US5391886A

公开(公告)日：1995-02-21

申请号：US131670

申请日：1993-10-05

申请人： Akio Yamada ,  Yoshihisa Oae ,  Satoru Yamazaki ,  Tomohiko Abe ,  Katsuhiko Kobayashi ,  Kiichi Sakamoto ,  Junko Hatta

发明人： Akio Yamada ,  Yoshihisa Oae ,  Satoru Yamazaki ,  Tomohiko Abe ,  Katsuhiko Kobayashi ,  Kiichi Sakamoto ,  Junko Hatta

IPC分类号： H01J37/317 ,  H01J37/00

CPC分类号： B82Y10/00 ,  B82Y40/00 ,  H01J37/3174

摘要： A method of exposing a pattern on a substrate by a charged particle beam includes the steps of energizing first and second mask deflectors provided at an upstream side of a stencil mask simultaneously to obtain a first relativistic relationship of energization between the first and second mask deflectors, energizing the first mask deflector and simultaneously the second mask deflector according to the first relativistic relationship so as to hit a selected aperture on the stencil mask, to obtain an absolute deflection of the charged particle beam as a function of the energization of the first mask deflector, energizing third and fourth mask deflectors provided at a downstream side of the stencil mask simultaneously to obtain a second relativistic relationship of energization between the third and fourth mask deflectors, and energizing the first through fourth mask deflectors according to the first and second relativistic relationship and further to the absolute relationship, such that the charged particle beam is deflected away from an optical axis and hit a selected aperture on the stencil mask while traveling parallel to the optical axis, and such that the charged particle beam passed through the stencil mask is deflected toward the optical axis and deflected again such that the charged particle beam travels toward the substrate in alignment with the optical axis.

摘要翻译： 通过带电粒子束在衬底上曝光图案的方法包括以下步骤：同时向在模板掩模的上游侧提供的第一和第二掩模偏转器同时激励，以获得第一和第二掩模偏转器之间的通电的第一相对论关系， 激励第一掩模偏转器并且根据第一相对论关系同时施加第二掩模偏转器，以便击打模板掩模上的选定孔径，以获得作为第一掩模偏转器的通电的函数的带电粒子束的绝对偏转 同时激励设置在模板掩模的下游侧的第三和第四掩模偏转器，以获得第三和第四掩模偏转器之间的通电的第二相对论关系，以及根据第一和第二相对论关系激励第一至第四掩模偏转器;以及 进一步到绝对的关系，这样 带电粒子束偏离光轴并且在平行于光轴移动的同时撞击模板掩模上的选定孔径，并且使得通过模板掩模的带电粒子束向光轴偏转并再次偏转 带电粒子束与光轴对准地朝向衬底移动。

公开(公告)号：US5276331A

公开(公告)日：1994-01-04

申请号：US968892

申请日：1992-10-30

申请人： Yoshihisa Oae ,  Kiichi Sakamoto

发明人： Yoshihisa Oae ,  Kiichi Sakamoto

IPC分类号： H01L21/30 ,  H01J37/147 ,  H01J37/317 ,  H01L21/027

CPC分类号： B82Y10/00 ,  B82Y40/00 ,  H01J37/1475 ,  H01J37/3174

摘要： An electron beam exposure system having an electromagnetic lens for forming an electron beam into an arbitrary image and for condensing and projecting the image on a sample, and a plurality of saddle type electromagnetic deflectors for deflecting and scanning the electron beam on the sample, wherein at least one of the plurality of saddle type electromagnetic deflectors has a half angle of arc of more than 60 degrees and positions in a vicinity of a smooth connecting line which links four points plotted on a graph having coordinates of the half angle of arc of 60 degrees to no less than a radius of curvature of 30 millimeters, approximately 61.5 degrees to 14 millimeters, approximately 64 degrees to 9 millimeters, and approximately 66 degrees to 7 millimeters. Thus, the electron beam exposure system having the saddle type electromagnetic deflector and which is small and has low aberration is realized.

摘要翻译： 一种电子束曝光系统，具有用于将电子束形成为任意图像并将图像聚焦和投影在样本上的电磁透镜，以及多个用于偏转和扫描样品上的电子束的鞍型电磁偏转器，其中， 多个鞍型电磁偏转器中的至少一个具有大于60度的弧的半角，并且在平滑连接线附近的位置，该平滑连接线连接四个点，绘制在具有60度的弧半角的坐标的曲线图上 不小于30毫米的曲率半径，约61.5度至14毫米，约64度至9毫米，以及约66度至7毫米。 因此，实现了具有鞍型电磁偏转器且小且具有低像差的电子束曝光系统。