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    Charged-particle-beam exposure device and charged-particle-beam exposure method
    1.
    发明授权
    Charged-particle-beam exposure device and charged-particle-beam exposure method 失效
    带电粒子束曝光装置和带电粒子束曝光方法

    公开(公告)号：US06222195B1

    公开(公告)日：2001-04-24

    申请号：US09637119

    申请日：2000-08-11

    申请人： Akio Yamada ,  Satoru Sagou ,  Hitoshi Watanabe ,  Satoru Yamazaki ,  Kiichi Sakamoto ,  Manabu Ohno ,  Kenichi Kawakami ,  Katsuhiko Kobayashi

    发明人： Akio Yamada ,  Satoru Sagou ,  Hitoshi Watanabe ,  Satoru Yamazaki ,  Kiichi Sakamoto ,  Manabu Ohno ,  Kenichi Kawakami ,  Katsuhiko Kobayashi

    IPC分类号： G03F900

    CPC分类号： B82Y10/00 ,  B82Y40/00 ,  G03F1/20 ,  G03F1/86 ,  H01J37/3045 ,  H01J37/3174 ,  H01J2237/2817 ,  H01J2237/31794

    摘要： A method of detecting deficiency of an aperture used in a charged-particle-beam exposure process employing at least two exposure columns is disclosed, where each of the two exposure columns passes a charged-particle beam through the aperture formed through a mask to shape a cross section of the charged-particle beam before exposing the charged-particle beam onto an object. The method includes the steps of mounting masks having the same aperture to the at least two exposure columns; scanning, in each of the at least two exposure columns, the charged-particle beam over an area containing a mark on a surface substantially at the same height as the object after passing the charged-particle beam through the same aperture; obtaining, in each of the at least two exposure columns, a signal waveform corresponding to the scan by detecting charged particles scattered by the mark; and comparing the signal waveform between the at least two exposure columns.

    摘要翻译： 公开了一种检测在使用至少两个曝光柱的带电粒子束曝光工艺中使用的孔的缺陷的方法，其中两个曝光柱中的每一个通过带电粒子束穿过通过掩模形成的孔以形成 在将带电粒子束暴露在物体上之前的带电粒子束的横截面。 该方法包括以下步骤：将具有相同孔径的掩模安装到至少两个曝光柱; 在所述至少两个曝光柱中的每一个中，在使带电粒子束通过相同的孔之后，在包含与物体基本上在与物体相同的高度的表面上的标记的区域上扫描带电粒子束; 在所述至少两个曝光列中的每一个中，通过检测由所述标记散射的带电粒子来获得对应于所述扫描的信号波形; 以及比较所述至少两个曝光列之间的信号波形。

    Method of detecting a deficiency in a charged-particle-beam exposure mask
    2.
    发明授权
    Method of detecting a deficiency in a charged-particle-beam exposure mask 失效
    检测带电粒子束曝光掩模缺陷的方法

    公开(公告)号：US5830612A

    公开(公告)日：1998-11-03

    申请号：US711935

    申请日：1996-09-11

    申请人： Akio Yamada ,  Satoru Sagou ,  Hitoshi Watanabe ,  Satoru Yamazaki ,  Kiichi Sakamoto ,  Manabu Ohno ,  Kenichi Kawakami ,  Katsuhiko Kobayashi

    发明人： Akio Yamada ,  Satoru Sagou ,  Hitoshi Watanabe ,  Satoru Yamazaki ,  Kiichi Sakamoto ,  Manabu Ohno ,  Kenichi Kawakami ,  Katsuhiko Kobayashi

    IPC分类号： G03F1/00 ,  G03F1/20 ,  H01J37/304 ,  H01J37/317 ,  G03F9/00 ,  G03C5/00

    CPC分类号： B82Y10/00 ,  B82Y40/00 ,  G03F1/86 ,  H01J37/3045 ,  H01J37/3174 ,  G03F1/20 ,  H01J2237/2817 ,  H01J2237/31794

    摘要： A method of detecting deficiency of an aperture used in a charged-particle-beam exposure process employing at least two exposure columns is disclosed, where each of the two exposure columns passes a charged-particle beam through the aperture formed through a mask to shape a cross section of the charged-particle beam before exposing the charged-particle beam onto an object. The method includes the steps of mounting masks having the same aperture to the at least two exposure columns; scanning, in each of the at least two exposure columns, the charged-particle beam over an area containing a mark on a surface substantially at the same height as the object after passing the charged-particle beam through the same aperture; obtaining, in each of the at least two exposure columns, a signal waveform corresponding to the scan by detecting charged particles scattered by the mark; and comparing the signal waveform between the at least two exposure columns.

    摘要翻译： 公开了一种检测在使用至少两个曝光柱的带电粒子束曝光工艺中使用的孔的缺陷的方法，其中两个曝光柱中的每一个通过带电粒子束穿过通过掩模形成的孔以形成 在将带电粒子束暴露在物体上之前的带电粒子束的横截面。 该方法包括以下步骤：将具有相同孔径的掩模安装到至少两个曝光柱; 在所述至少两个曝光柱中的每一个中，在将带电粒子束通过相同的孔之后，将包含在与物体基本上处于相同高度的表面上的标记的区域上的带电粒子束扫描; 在所述至少两个曝光列中的每一个中，通过检测由所述标记散射的带电粒子来获得对应于所述扫描的信号波形; 以及比较所述至少两个曝光列之间的信号波形。

    Charged particle-beam exposure device and charged-particle-beam exposure method
    3.
    发明授权
    Charged particle-beam exposure device and charged-particle-beam exposure method 失效
    带电粒子束曝光装置和带电粒子束曝光方法

    公开(公告)号：US6137111A

    公开(公告)日：2000-10-24

    申请号：US84952

    申请日：1998-05-28

    申请人： Akio Yamada ,  Satoru Sagou ,  Hitoshi Watanabe ,  Satoru Yamazaki ,  Kiichi Sakamoto ,  Manabu Ohno ,  Kenichi Kawakami ,  Katsuhiko Kobayashi

    发明人： Akio Yamada ,  Satoru Sagou ,  Hitoshi Watanabe ,  Satoru Yamazaki ,  Kiichi Sakamoto ,  Manabu Ohno ,  Kenichi Kawakami ,  Katsuhiko Kobayashi

    IPC分类号： G03F1/00 ,  G03F1/20 ,  H01J37/304 ,  H01J37/317 ,  G03F9/00 ,  H01J37/00

    CPC分类号： B82Y10/00 ,  B82Y40/00 ,  G03F1/86 ,  H01J37/3045 ,  H01J37/3174 ,  G03F1/20 ,  H01J2237/2817 ,  H01J2237/31794

    摘要： A method of detecting deficiency of an aperture used in a charged-particle-beam exposure process employing at least two exposure columns is disclosed, where each of the two exposure columns passes a charged-particle beam through the aperture formed through a mask to shape a cross section of the charged-particle beam before exposing the charged-particle beam onto an object. The method includes the steps of mounting masks having the same aperture to the at least two exposure columns; scanning, in each of the at least two exposure columns, the charged-particle beam over an area containing a mark on a surface substantially at the same height as the object after passing the charged-particle beam through the same aperture; obtaining, in each of the at least two exposure columns, a signal waveform corresponding to the scan by detecting charged particles scattered by the mark; and comparing the signal waveform between the at least two exposure columns.

    摘要翻译： 公开了一种检测在使用至少两个曝光柱的带电粒子束曝光工艺中使用的孔的缺陷的方法，其中两个曝光柱中的每一个通过带电粒子束穿过通过掩模形成的孔以形成 在将带电粒子束暴露在物体上之前的带电粒子束的横截面。 该方法包括以下步骤：将具有相同孔径的掩模安装到至少两个曝光柱; 在所述至少两个曝光柱中的每一个中，在将带电粒子束通过相同的孔之后，将包含在与物体基本上处于相同高度的表面上的标记的区域上的带电粒子束扫描; 在所述至少两个曝光列中的每一个中，通过检测由所述标记散射的带电粒子来获得对应于所述扫描的信号波形; 以及比较所述至少两个曝光列之间的信号波形。

    Charged particle beam exposure system and method of exposing a pattern on an object by such a charged particle beam exposure system
    4.
    发明授权
    Charged particle beam exposure system and method of exposing a pattern on an object by such a charged particle beam exposure system 失效
    带电粒子束曝光系统和通过这种带电粒子束曝光系统将图案曝光在物体上的方法

    公开(公告)号：US5391886A

    公开(公告)日：1995-02-21

    申请号：US131670

    申请日：1993-10-05

    申请人： Akio Yamada ,  Yoshihisa Oae ,  Satoru Yamazaki ,  Tomohiko Abe ,  Katsuhiko Kobayashi ,  Kiichi Sakamoto ,  Junko Hatta

    发明人： Akio Yamada ,  Yoshihisa Oae ,  Satoru Yamazaki ,  Tomohiko Abe ,  Katsuhiko Kobayashi ,  Kiichi Sakamoto ,  Junko Hatta

    IPC分类号： H01J37/317 ,  H01J37/00

    CPC分类号： B82Y10/00 ,  B82Y40/00 ,  H01J37/3174

    摘要： A method of exposing a pattern on a substrate by a charged particle beam includes the steps of energizing first and second mask deflectors provided at an upstream side of a stencil mask simultaneously to obtain a first relativistic relationship of energization between the first and second mask deflectors, energizing the first mask deflector and simultaneously the second mask deflector according to the first relativistic relationship so as to hit a selected aperture on the stencil mask, to obtain an absolute deflection of the charged particle beam as a function of the energization of the first mask deflector, energizing third and fourth mask deflectors provided at a downstream side of the stencil mask simultaneously to obtain a second relativistic relationship of energization between the third and fourth mask deflectors, and energizing the first through fourth mask deflectors according to the first and second relativistic relationship and further to the absolute relationship, such that the charged particle beam is deflected away from an optical axis and hit a selected aperture on the stencil mask while traveling parallel to the optical axis, and such that the charged particle beam passed through the stencil mask is deflected toward the optical axis and deflected again such that the charged particle beam travels toward the substrate in alignment with the optical axis.

    摘要翻译： 通过带电粒子束在衬底上曝光图案的方法包括以下步骤：同时向在模板掩模的上游侧提供的第一和第二掩模偏转器同时激励，以获得第一和第二掩模偏转器之间的通电的第一相对论关系， 激励第一掩模偏转器并且根据第一相对论关系同时施加第二掩模偏转器，以便击打模板掩模上的选定孔径，以获得作为第一掩模偏转器的通电的函数的带电粒子束的绝对偏转 同时激励设置在模板掩模的下游侧的第三和第四掩模偏转器，以获得第三和第四掩模偏转器之间的通电的第二相对论关系，以及根据第一和第二相对论关系激励第一至第四掩模偏转器;以及 进一步到绝对的关系，这样 带电粒子束偏离光轴并且在平行于光轴移动的同时撞击模板掩模上的选定孔径，并且使得通过模板掩模的带电粒子束向光轴偏转并再次偏转 带电粒子束与光轴对准地朝向衬底移动。

    Transparent mask plate for charged particle beam exposure apparatus and charged particle beam exposure process using the transparent mask plate
    5.
    发明授权
    Transparent mask plate for charged particle beam exposure apparatus and charged particle beam exposure process using the transparent mask plate 失效
    用于带电粒子束曝光装置的透明掩模板和使用透明掩模板的带电粒子束曝光工艺

    公开(公告)号：US5432314A

    公开(公告)日：1995-07-11

    申请号：US109263

    申请日：1993-08-20

    申请人： Satoru Yamazaki ,  Yoshihisa Oae ,  Kiichi Sakamoto ,  Akio Yamada

    发明人： Satoru Yamazaki ,  Yoshihisa Oae ,  Kiichi Sakamoto ,  Akio Yamada

    IPC分类号： G03F1/20 ,  G03F1/68 ,  G03F7/20 ,  G03F9/00 ,  H01J37/317 ,  H01L21/027 ,  H01J37/04

    CPC分类号： B82Y10/00 ,  B82Y40/00 ,  G03F9/70 ,  H01J37/3174 ,  H01J2237/30438 ,  H01J2237/31788 ,  H01J2237/31794

    摘要： A transparent mask plate used in a charged particle beam exposure apparatus includes a base plate, an exposure pattern area, and a calibration area. The exposure pattern area is formed in the base plate and has a plurality of transparent patterns for shaping a cross section of a charged particle beam into a block pattern. The calibration area is formed in the base plate, and has a plurality of transparent patterns used for obtaining a condition for deflecting the charged particle beam. The plurality of transparent patterns formed in the calibration area are arranged at the same pitch as the plurality of transparent patterns formed in the exposure pattern area. Each of the plurality of transparent patterns formed in the calibration area corresponds to one of the plurality of transparent patterns formed in the exposure pattern area.

    摘要翻译： 在带电粒子束曝光装置中使用的透明掩模板包括基板，曝光图案区域和校准区域。 曝光图案区域形成在基板中，并且具有多个透明图案，用于将带电粒子束的横截面成形为块图案。 校准区域形成在基板中，并且具有用于获得用于偏转带电粒子束的条件的多个透明图案。 形成在校准区域中的多个透明图案以与形成在曝光图案区域中的多个透明图案相同的间距排列。 形成在校准区域中的多个透明图案中的每一个对应于在曝光图案区域中形成的多个透明图案中的一个。

    Mask and method of creating mask as well as electron-beam exposure method and electron-beam exposure device
    9.
    发明授权
    Mask and method of creating mask as well as electron-beam exposure method and electron-beam exposure device 失效
    掩模和创建掩模的方法以及电子束曝光方法和电子束曝光装置

    公开(公告)号：US5824437A

    公开(公告)日：1998-10-20

    申请号：US685958

    申请日：1996-07-22

    申请人： Takayuki Sakakibara ,  Satoru Sagoh ,  Satoru Yamazaki ,  Kiichi Sakamoto ,  Hiroshi Yasuda

    发明人： Takayuki Sakakibara ,  Satoru Sagoh ,  Satoru Yamazaki ,  Kiichi Sakamoto ,  Hiroshi Yasuda

    IPC分类号： G03F1/20 ,  H01J37/317 ,  G03F9/00

    CPC分类号： B82Y10/00 ,  B82Y40/00 ,  G03F1/20 ,  H01J37/3174 ,  H01J2237/31764 ,  H01J2237/31788

    摘要： A mask for exposure of an object by an electron beam is formed of a plate of material which blocks the electron beam and which has plural pattern exposure blocks defined therein, each having one or more aperture defining regions therein and, when selected, determining the shaping of the electron beam passing therethrough so as to expose a respective pattern on an object. Each aperture-defining region has one aperture or plural, spaced apertures formed respectively therein, having a total area size, selected to be smaller than the area size of the aperture defining region in accordance with controlling the current level of an electron beam passing therethrough, while reducing Coulomb interaction of the electron beam passing through the aperture or apertures of each aperture defining portion of the pattern exposure block.

    摘要翻译： 用于通过电子束曝光物体的掩模由阻挡电子束并且其中限定有多个图案曝光块的材料板形成，每个在其中具有一个或多个孔限定区域，并且当被选择时，确定成形 的电子束通过其中以使物体上的相应图案曝光。 每个孔限定区域具有根据控制通过其中的电子束的电流水平而分别形成的具有总面积尺寸的一个孔径或多个间隔开的孔，其选择为小于孔限定区域的面积尺寸， 同时减少通过图案曝光块的每个孔限定部分的孔或孔的电子束的库仑相互作用。

    Pattern judging method, mask producing method, and method of dividing block pattern for use in block exposure
    10.
    发明授权
    Pattern judging method, mask producing method, and method of dividing block pattern for use in block exposure 失效
    图案判断方法，掩模制作方法以及块模块曝光中使用的块图案的分割方法

    公开(公告)号：US5537487A

    公开(公告)日：1996-07-16

    申请号：US257204

    申请日：1994-06-09

    申请人： Masaaki Miyajima ,  Hiroshi Yasuda ,  Satoru Yamazaki ,  Kiichi Sakamoto

    发明人： Masaaki Miyajima ,  Hiroshi Yasuda ,  Satoru Yamazaki ,  Kiichi Sakamoto

    IPC分类号： G06F17/50 ,  H01J37/302 ,  G06K9/00

    CPC分类号： G06F17/5081 ,  H01J37/3026

    摘要： A method of dividing a block pattern for use in a block exposure, to be implemented on a computer, divides an arbitrary block which is to be formed in a block mask that is used for the block exposure when the arbitrary block is judged as including a prohibiting pattern which is undesirable from a point of view of the block exposure. This method comprises the steps of (a) dividing the arbitrary block in a first direction to obtain a first block having a first dividing width along a second direction which is perpendicular to the first direction, (b) dividing a remaining block portion of the arbitrary block excluding the first block in the first direction to obtain a first divided portion having a second dividing width along the second direction, and merging the first dividing portion to the first block if the second dividing width is less than a predetermined width, and (c) searching the first block in the first direction after the step (b) and merging one of two adjacent first patterns within the first block to a second block if a pattern interval which is less than a predetermined value extends along the first direction between the first patterns.

    摘要翻译： 将要在计算机上实现的块曝光中使用的块图案分割的方法将当将任意块判断为包括一个块时将要用于块曝光的块掩模中形成的任意块划分为 从块曝光的观点来看，禁止图案是不期望的。 该方法包括以下步骤：（a）沿第一方向划分任意块以获得具有垂直于第一方向的第二方向具有第一分割宽度的第一块，（b）将任意块的剩余块部分 在第一方向排除第一块以获得沿着第二方向具有第二分割宽度的第一分割部分，并且如果第二分割宽度小于预定宽度，则将第一分割部分合并到第一块，并且（c ）在步骤（b）之后沿第一方向搜索第一块，并且如果小于预定值的图案间隔在第一块之间的第一方向上延伸，则将第一块内的两个相邻第一图案中的一个合并到第二块中 模式。