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公开(公告)号：US20160047866A1
公开(公告)日：2016-02-18
申请号：US14928306
申请日：2015-10-30
Applicant: Infineon Technologies AG
Inventor： Juergen Zimmer
CPC classification number: G01R33/096 , B82Y25/00 , G01B7/30 , G01D5/145 , G01R33/0052 , G01R33/09 , G01R33/091 , G01R33/093 , G01R33/098 , H01L43/08 , Y10T29/49002 , Y10T29/49117
Abstract: Embodiments relate to xMR sensors, sensor elements and structures, and methods. In an embodiment, a sensor element comprises a non-elongated xMR structure; and a plurality of contact regions formed on the xMR structure spaced apart from one another such that a non-homogeneous current direction and current density distribution are induced in the xMR structure when a voltage is applied between the plurality of contact regions.
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公开(公告)号：US20150355295A1
公开(公告)日：2015-12-10
申请号：US14830195
申请日：2015-08-19
Applicant: INFINEON TECHNOLOGIES AG
Inventor： Juergen Zimmer , Klemens Pruegl , Olaf Kuehn , Andreas Strasser , Ralf-Rainer Schledz , Norbert Thyssen
CPC classification number: G01R33/0052 , G01R33/09 , G01R33/093 , G01R33/096 , G01R33/098 , H01L27/22 , H01L43/02 , H01L43/08 , H01L43/12
Abstract: Embodiments relate to xMR sensors having very high shape anisotropy. Embodiments also relate to novel structuring processes of xMR stacks to achieve very high shape anisotropies without chemically affecting the performance relevant magnetic field sensitive layer system while also providing comparatively uniform structure widths over a wafer, down to about 100 nm in embodiments. Embodiments can also provide xMR stacks having side walls of the performance relevant free layer system that are smooth and/or of a defined lateral geometry which is important for achieving a homogeneous magnetic behavior over the wafer.
Abstract translation: 实施例涉及具有非常高的形状各向异性的xMR传感器。 实施例还涉及xMR堆叠的新结构化过程，以实现非常高的形状各向异性，而不会在性能相关的磁场敏感层系统中产生化学影响，同时在晶片上提供相对均匀的结构宽度，在实施例中可降低至约100nm。 实施例还可以提供具有性能相关自由层系统的侧壁的xMR堆叠，其平滑和/或限定的横向几何形状对于在晶片上实现均匀的磁性行为是重要的。
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公开(公告)号：US11519977B2
公开(公告)日：2022-12-06
申请号：US17102747
申请日：2020-11-24
Applicant: Infineon Technologies AG
Inventor： Wolfgang Raberg , Clemens Muehlenhoff , Juergen Zimmer
Abstract: A magnetoresistive sensor has a sensor plane in which the magnetoresistive sensor is sensitive to a magnetic field. The magnetoresistive sensor includes a reference layer having a reference magnetization that is fixed and that is aligned with an in-plane axis of the sensor plane; and a magnetic free layer disposed proximate to the reference layer, the magnetic free layer having a free layer magnetization aligned along an out-of-plane axis that is out-of-plane to the sensor plane. The free layer magnetization is configured to tilt away from the out-of-plane axis and towards the sensor plane in a presence of an external in-plane magnetic field.
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公开(公告)号：US11435414B2
公开(公告)日：2022-09-06
申请号：US16696074
申请日：2019-11-26
Applicant: Infineon Technologies AG
Inventor： Juergen Zimmer , Konrad Kapser
IPC: G01R33/02 , G01R33/09 , G01R33/025
Abstract: A magnetic field sensor for detecting a direction of a magnetic field comprises an xMR sensor designed to produce an xMR sine signal and an xMR cosine signal based on the magnetic field, and an AMR sensor designed to produce an AMR sine signal and/or an AMR cosine signal based on the magnetic field. A processing circuit is designed to determine the direction of the magnetic field using the xMR sine signal, the xMR cosine signal, a first phase difference between the xMR sine signal and the AMR sine signal or the AMR cosine signal, and a second phase difference between the xMR cosine signal and the AMR sine signal or the AMR cosine signal.
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公开(公告)号：US10520556B2
公开(公告)日：2019-12-31
申请号：US15836318
申请日：2017-12-08
Applicant: Infineon Technologies AG
Inventor： Juergen Zimmer
Abstract: A bridge circuit having a full-bridge circuit having a first branch and a second branch coupled in parallel, the first branch comprising a first half-bridge circuit and a first tunnel magnetoresistance (TMR) resistor cascade coupled in series, and the second branch comprising a second half-bridge circuit and a second TMR resistor cascade coupled in series, wherein the full-bridge circuit has an offset voltage of zero or substantially close to zero.
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Patent Agency Ranking
公开(公告)号：US10337888B2
公开(公告)日：2019-07-02
申请号：US14976348
申请日：2015-12-21
Applicant: Infineon Technologies AG
Inventor： Franz Jost , Harald Witschnig , Juergen Zimmer
Abstract: A sensor circuit includes a plurality of half-bridge sensor circuits. The sensor circuit includes a sensor output value determination circuit configured to determine a sensor output value. The sensor circuit further includes an error determination circuit configured to generate an error signal based on a first half-bridge sensor signal and a second half-bridge sensor signal. The sensor circuit further includes a control circuit configured to control a selection of one of the first half-bridge sensor circuit and the second half-bridge sensor circuit for providing one of the first half-bridge sensor signal and the second half-bridge sensor signal to the sensor output value determination circuit to determine the sensor output value.
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公开(公告)号：US20190041237A1
公开(公告)日：2019-02-07
申请号：US16155332
申请日：2018-10-09
Applicant: Infineon Technologies AG
Inventor： Juergen Zimmer , Hansjoerg Kuemmel , Harald Witschnig , Franz Jost , Akos Hegedus , Konrad Kapser , Llorenç Vallmajó I Ribas
Abstract: A magnetic angle sensor including a first Wheatstone bridge circuit having a plurality of first magnetoresistive elements; and a second Wheatstone bridge circuit having a plurality of second magnetoresistive elements, wherein the plurality of second magnetoresistive elements have diversity with respect to the plurality of first magnetoresistive elements.
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公开(公告)号：US20170314965A1
公开(公告)日：2017-11-02
申请号：US15652646
申请日：2017-07-18
Applicant: Infineon Technologies AG
Inventor： Juergen Zimmer , Klemens Pruegl
IPC: G01D5/16 , H04L12/911 , G01B7/30 , G01R33/09 , G01R33/02 , H04L12/927 , H04L12/877 , H04L12/863
Abstract: Embodiments relate to xMR sensors, in particular AMR and/or TMR angle sensors with an angle range of 360 degrees. In embodiments, AMR angle sensors with a range of 360 degrees combine conventional, highly accurate AMR angle structures with structures in which an AMR layer is continuously magnetically biased by an exchange bias coupling effect. The equivalent bias field is lower than the external rotating magnetic field and is applied continuously to separate sensor structures. Thus, in contrast with conventional solutions, no temporary, auxiliary magnetic field need be generated, and embodiments are suitable for magnetic fields up to about 100 mT or more. Additional embodiments relate to combined TMR and AMR structures. In such embodiments, a TMR stack with a free layer functioning as an AMR structure is used. With a single such stack, contacted in different modes, a high-precision angle sensor with 360 degrees of uniqueness can be realized.
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公开(公告)号：US20170160350A1
公开(公告)日：2017-06-08
申请号：US15433524
申请日：2017-02-15
Applicant: Infineon Technologies AG
Inventor： Juergen Zimmer , Klemens Pruegl , Olaf Kuehn , Andreas Strasser , Ralf-Rainer Schledz , Norbert Thyssen
CPC classification number: G01R33/0052 , G01R33/09 , G01R33/093 , G01R33/096 , G01R33/098 , H01L27/22 , H01L43/02 , H01L43/08 , H01L43/12
Abstract: Embodiments relate to xMR sensors having very high shape anisotropy. Embodiments also relate to novel structuring processes of xMR stacks to achieve very high shape anisotropies without chemically affecting the performance relevant magnetic field sensitive layer system while also providing comparatively uniform structure widths over a wafer, down to about 100 nm in embodiments. Embodiments can also provide xMR stacks having side walls of the performance relevant free layer system that are smooth and/or of a defined lateral geometry which is important for achieving a homogeneous magnetic behavior over the wafer.
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公开(公告)号：US20170110505A1
公开(公告)日：2017-04-20
申请号：US15391111
申请日：2016-12-27
Applicant: Infineon Technologies AG
Inventor： Stefan Kolb , Klemens Pruegl , Juergen Zimmer
IPC: H01L27/22 , H01L23/522 , G01R33/09 , H01L43/12 , H01L23/552 , H01L43/08 , H01L23/528 , H01L43/02
CPC classification number: H01L27/22 , G01R33/07 , G01R33/09 , G01R33/093 , G01R33/098 , H01L23/5226 , H01L23/528 , H01L23/552 , H01L43/02 , H01L43/04 , H01L43/06 , H01L43/08 , H01L43/12 , H01L43/14
Abstract: In the method of manufacturing a magnetoresistive sensor module, at first a composite arrangement out of a semiconductor substrate and a metal-insulator arrangement is provided, wherein a semiconductor circuit arrangement is integrated adjacent to a main surface of the semiconductor substrate into the same, wherein the metal-insulator arrangement is arranged on the main surface of the semiconductor substrate and comprises a structured metal sheet and insulation material at least partially surrounding the structured metal sheet, wherein the structured metal sheet is electrically connected to the semiconductor circuit arrangement. Then, a magnetoresistive sensor structure is applied onto a surface of the insulation material of the composite arrangement, and finally an electrical connection between the magnetoresistive sensor structure and the structured metal sheet is established, so that the magnetoresistive sensor structure is connected to the integrated circuit arrangement.
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