Millimeter wave CMOS engines for waveguide fabrics

    公开(公告)号:US10211970B2

    公开(公告)日:2019-02-19

    申请号:US15475827

    申请日:2017-03-31

    Abstract: The present disclosure is directed to systems and methods for communicating between rack mounted devices disposed in the same or different racks separated by distances of less than a meter to a few tens of meters. The system includes a CMOS first mm-wave engine that includes mm-wave transceiver circuitry, mm-wave MODEM circuitry, power distribution and control circuitry, and a mm-wave waveguide connector. The CMOS first mm-wave engine communicably couples to a CMOS second mm-wave engine that also includes mm-wave transceiver circuitry, mm-wave MODEM circuitry, power distribution and control circuitry, and a mm-wave waveguide connector. In some implementations, at least a portion of the mm-wave transceiver circuitry may be fabricated using III-V semiconductor manufacturing methods. The use of mm-wave communication techniques beneficially improves data integrity and increases achievable datarates, and reduces power costs.

    MILLIMETER WAVE FABRIC NETWORK OVER DIELECTRIC WAVEGUIDES

    公开(公告)号:US20180191049A1

    公开(公告)日:2018-07-05

    申请号:US15394990

    申请日:2016-12-30

    Abstract: Radio frequency (RF) data transfer between components in rack mounted systems is facilitated through the use of dielectric waveguides and millimeter Wave (mm-Wave) transceivers. A signal generator provides one or more data signals to a serializer/deserializer (SERDES) which serializes a plurality of parallel data signals to produce a single, serialized, signal containing data from each of the input signals to the SERDES. A mm-Wave die upconverts the serialized signal to a mm-Wave signal and a mm-Wave launcher launches the signal into the dielectric waveguide. At the receiving end the process is reversed such that the mm-Wave signal is first downconverted and passed through a SERDES to provide the original one or more signals to a recipient signal generator. Some or all of the components may be formed directly in the semiconductor package.

    FINE-GRAIN INTEGRATION OF RADIO FREQUENCY AND HIGH-VOLTAGE DEVICES

    公开(公告)号:US20250112216A1

    公开(公告)日:2025-04-03

    申请号:US18478937

    申请日:2023-09-29

    Abstract: Methods of selectively transferring integrated circuit (IC) components between substrates, and devices and systems formed using the same, are disclosed herein. In one embodiment, a first substrate with a release layer and a layer of IC components over the release layer is received, and a second substrate with one or more adhesive areas is received. The layer of IC components may include one or more thick gate oxide transistors, group III-V transistors, varactors, or electrostatic discharge protection devices. The first substrate is partially bonded to the second substrate, such that a subset of IC components on the first substrate are bonded to the adhesive areas on the second substrate. The first substrate is then separated from the second substrate, and the subset of IC components bonded to the second substrate are separated from the first substrate and remain on the second substrate.

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