公开(公告)号：US08294880B2

公开(公告)日：2012-10-23

申请号：US13137907

申请日：2011-09-21

申请人： Young-gu Jin ,  Dae-kil Cha ,  Seung-hoon Lee ,  Yoon-dong Park

发明人： Young-gu Jin ,  Dae-kil Cha ,  Seung-hoon Lee ,  Yoon-dong Park

IPC分类号： G01C3/08

CPC分类号： G01C3/08 ,  G01B11/22 ,  H01L27/14609 ,  H01L27/14641

摘要： Provided are a distance measuring sensor including a double transfer gate, and a three dimensional color image sensor including the distance measuring sensor. The distance measuring sensor may include first and second charge storage regions which are spaced apart from each other on a substrate doped with a first impurity, the first and second charge storage regions being doped with a second impurity; a photoelectric conversion region between the first and second charge storage regions on the substrate, being doped with the second impurity, and generating photo-charges by receiving light; and first and second transfer gates which are formed between the photoelectric conversion region and the first and second charge storage regions above the substrate to selectively transfer the photo-charges in the photoelectric conversion region to the first and second charge storage regions.

公开(公告)号：US20120012899A1

公开(公告)日：2012-01-19

申请号：US13137907

申请日：2011-09-21

申请人： Young-gu Jin ,  Dae-Kil Cha ,  Seung-hoon Lee ,  Yoon-dong Park

发明人： Young-gu Jin ,  Dae-Kil Cha ,  Seung-hoon Lee ,  Yoon-dong Park

IPC分类号： H01L27/148

CPC分类号： G01C3/08 ,  G01B11/22 ,  H01L27/14609 ,  H01L27/14641

摘要： Provided are a distance measuring sensor including a double transfer gate, and a three dimensional color image sensor including the distance measuring sensor. The distance measuring sensor may include first and second charge storage regions which are spaced apart from each other on a substrate doped with a first impurity, the first and second charge storage regions being doped with a second impurity; a photoelectric conversion region between the first and second charge storage regions on the substrate, being doped with the second impurity, and generating photo-charges by receiving light; and first and second transfer gates which are formed between the photoelectric conversion region and the first and second charge storage regions above the substrate to selectively transfer the photo-charges in the photoelectric conversion region to the first and second charge storage regions.

摘要翻译： 提供了包括双转移门的距离测量传感器和包括距离测量传感器的三维彩色图像传感器。 距离测量传感器可以包括在掺杂有第一杂质的衬底上彼此间隔开的第一和第二电荷存储区域，第一和第二电荷存储区域掺杂有第二杂质; 在基板上的第一和第二电荷存储区域之间的光电转换区域，掺杂有第二杂质，并通过接收光产生光电荷; 以及第一和第二传输门，其形成在光电转换区与衬底上方的第一和第二电荷存储区之间，以选择性地将光电转换区中的光电荷转移到第一和第二电荷存储区。

公开(公告)号：US08053822B2

公开(公告)日：2011-11-08

申请号：US12153666

申请日：2008-05-22

申请人： Suk-pil Kim ,  Young-gu Jin ,  Yoon-dong Park

发明人： Suk-pil Kim ,  Young-gu Jin ,  Yoon-dong Park

IPC分类号： H01L27/108

CPC分类号： H01L27/108 ,  H01L27/10802 ,  H01L29/7841

摘要： Example embodiments provide a capacitorless dynamic random access memory (DRAM), and methods of manufacturing and operating the same. The capacitorless DRAM according to example embodiments may include a semiconductor layer separated from a top surface of a substrate and that contains a source region, a drain region, and a channel region, a charge reserving layer formed on the channel region, and a gate formed on the substrate to contact the channel region and the charge reserving layer.

摘要翻译： 示例性实施例提供无电容器动态随机存取存储器（DRAM）及其制造和操作方法。 根据示例实施例的无电容器DRAM可以包括从衬底的顶表面分离并且包含源极区，漏极区和沟道区的半导体层，形成在沟道区上的电荷保留层，以及形成的栅极 在基板上与沟道区和电荷保留层接触。

公开(公告)号：US20110129123A1

公开(公告)日：2011-06-02

申请号：US12954835

申请日：2010-11-26

申请人： Ilia Ovsiannikov ,  Yoon-dong Park ,  Dong-ki Min ,  Young-gu Jin

发明人： Ilia Ovsiannikov ,  Yoon-dong Park ,  Dong-ki Min ,  Young-gu Jin

IPC分类号： G06K9/00

CPC分类号： G01B11/026 ,  G01S7/4912 ,  G01S7/4914 ,  G01S17/023 ,  G01S17/89

摘要： An image sensor includes a clock signal generator configured to generate and output at least first and second clock signals, a plurality of pixels configured to generate associated distance signals based on corresponding clock signals from among the at least first and second clock signals and light reflected by an object, and a distance information deciding unit configured to determine distance information with respect to the object by using the associated distance signals. At least one first pixel from among the plurality of pixels is configured to generate the associated distance signal based on at least the first clock signal, and at least one second pixel from among the plurality of pixels, which is adjacent to the at least one first pixel, is configured to generate the associated distance signal based on at least the second clock signal.

摘要翻译： 图像传感器包括：时钟信号发生器，被配置为产生并输出至少第一和第二时钟信号;多个像素，被配置为基于来自所述至少第一和第二时钟信号中的相应时钟信号和由 对象和距离信息决定单元，被配置为通过使用相关联的距离信号来确定关于对象的距离信息。 所述多个像素中的至少一个第一像素被配置为基于至少所述第一时钟信号和所述多个像素中的至少一个第二像素生成所述相关距离信号，所述至少一个第二像素与所述至少一个第一 像素，被配置为基于至少第二时钟信号来生成相关联的距离信号。

公开(公告)号：US07948019B2

公开(公告)日：2011-05-24

申请号：US12071451

申请日：2008-02-21

申请人： Young-gu Jin ,  Ki-ha Hong ,  Yoon-dong Park ,  Jai-kwang Shin ,  Suk-pil Kim

发明人： Young-gu Jin ,  Ki-ha Hong ,  Yoon-dong Park ,  Jai-kwang Shin ,  Suk-pil Kim

IPC分类号： H01L29/788

CPC分类号： G11C16/0416 ,  H01L21/28273 ,  H01L27/11521 ,  H01L29/0673 ,  H01L29/42324 ,  H01L29/66825 ,  H01L29/7881

摘要： Example embodiments include nonvolatile memory devices that have good operation performance and may be made in a highly integrated structure, and methods of operating the same. Example embodiments of the nonvolatile memory devices include a substrate electrode, and a semiconductor channel layer on the substrate electrode, a floating gate electrode on the substrate electrode, wherein a portion of the floating gate electrode faces the semiconductor channel layer, a control gate electrode on the floating gate electrode, and wherein a distance between a portion of the floating gate electrode and the substrate electrode is smaller than a distance between the semiconductor channel layer and the substrate electrode wherein charge tunneling occurs.

摘要翻译： 示例性实施例包括具有良好操作性能并且可以以高度集成的结构制造的非易失性存储器件及其操作方法。 非易失性存储器件的示例性实施例包括衬底电极和衬底电极上的半导体沟道层，衬底电极上的浮置栅电极，其中浮置栅电极的一部分面向半导体沟道层，控制栅极电极 所述浮置栅极电极，并且其中所述浮置栅电极的一部分与所述基板电极之间的距离小于半导体沟道层与发生电荷隧道的基板电极之间的距离。

公开(公告)号：US07929351B2

公开(公告)日：2011-04-19

申请号：US12382790

申请日：2009-03-24

申请人： Kwang-soo Seol ,  Young-gu Jin ,  Yoon-dong Park

发明人： Kwang-soo Seol ,  Young-gu Jin ,  Yoon-dong Park

IPC分类号： G11C11/34

CPC分类号： G11C16/10 ,  G11C16/3409 ,  G11C16/344 ,  G11C16/3454

摘要： Provided is a method and device for reducing lateral movement of charges. The method may include pre-programming at least one memory cell that is in an erased state by applying a pre-programming voltage to the at least one memory cell to have a narrower distribution of threshold voltages than the at least one erased state memory cell and verifying that the pre-programmed memory cell is in the pre-programmed state using a negative effective verifying voltage.

摘要翻译： 提供一种用于减少电荷的横向移动的方法和装置。 该方法可以包括通过对至少一个存储器单元施加预编程电压以使得具有比所述至少一个擦除状态存储器单元更窄的阈值电压分布来对处于擦除状态的至少一个存储器单元进行预编程，以及 使用负的有效验证电压来验证预编程存储器单元是否处于预编程状态。

公开(公告)号：US07863672B2

公开(公告)日：2011-01-04

申请号：US12285403

申请日：2008-10-03

申请人： Young-gu Jin ,  Yoon-dong Park ,  Won-joo Kim ,  Suk-pil Kim ,  Seung-hoon Lee

发明人： Young-gu Jin ,  Yoon-dong Park ,  Won-joo Kim ,  Suk-pil Kim ,  Seung-hoon Lee

IPC分类号： H01L29/788 ,  H01L29/792 ,  H01L21/336

CPC分类号： H01L21/28282 ,  H01L21/28273 ,  H01L27/11568 ,  H01L27/11578 ,  H01L27/11582 ,  H01L29/66825 ,  H01L29/66833 ,  H01L29/792 ,  H01L29/7926

摘要： Provided are a non-volatile memory device that may expand to a stacked structure and may be more easily highly integrated and an economical method of fabricating the non-volatile memory device. The non-volatile memory device may include at least one semiconductor column. At least one first control gate electrode may be arranged on a first side of the at least one semiconductor column. At least one second control gate electrode may be arranged on a second side of the at least one semiconductor column. A first charge storage layer may be between the at least one first control gate electrode and the at least one semiconductor column. A second charge storage layer may be between the at least one second control gate electrode and the at least one semiconductor column.

摘要翻译： 提供了可以扩展到堆叠结构并且可以更容易地高度集成的非易失性存储器件，以及制造非易失性存储器件的经济方法。 非易失性存储器件可以包括至少一个半导体柱。 至少一个第一控制栅电极可以布置在至少一个半导体柱的第一侧上。 至少一个第二控制栅电极可以布置在至少一个半导体柱的第二侧上。 第一电荷存储层可以在至少一个第一控制栅电极和至少一个半导体柱之间。 第二电荷存储层可以在至少一个第二控制栅极电极和至少一个半导体柱之间。

公开(公告)号：US20100012186A1

公开(公告)日：2010-01-21

申请号：US12436832

申请日：2009-05-07

申请人： Yoon-dong Park ,  Kwang-soo Seol ,  Deok-kee Kim ,  Won-joo Kim ,  Young-gu Jin ,  Seung-hoon Lee ,  Suk-pil Kim

发明人： Yoon-dong Park ,  Kwang-soo Seol ,  Deok-kee Kim ,  Won-joo Kim ,  Young-gu Jin ,  Seung-hoon Lee ,  Suk-pil Kim

IPC分类号： H01L31/00

CPC分类号： H01L35/32 ,  H01L31/0547 ,  H02S10/10 ,  Y02E10/52

摘要： Provided is a bulb-type light concentrated solar cell module that includes a reflective mirror unit that is concavely formed to convergingly reflect sunlight and has a first hole on a bottom thereof; a solar cell that generates electrical energy in response to light received from the reflective mirror unit; a socket that blocks the first hole at a lower part of the reflective mirror unit and is fixed on the reflective mirror unit; and a power control unit that is electrically connected to the solar cell to generate electricity in the socket.

摘要翻译： 本发明提供一种灯泡型光集中太阳能电池模块，其包括反射镜单元，该反射镜单元凹入地形成以会聚地反射太阳光，并且在其底部具有第一孔; 太阳能电池，其响应于从所述反射镜单元接收的光产生电能; 插座，其阻挡反射镜单元的下部的第一孔并固定在反射镜单元上; 以及电连接到太阳能电池以在插座中发电的电力控制单元。

公开(公告)号：US20090026519A1

公开(公告)日：2009-01-29

申请号：US12010482

申请日：2008-01-25

申请人： Young-gu Jin ,  Ki-ha Hong ,  Yoon-dong Park

发明人： Young-gu Jin ,  Ki-ha Hong ,  Yoon-dong Park

IPC分类号： H01L27/108 ,  G11C11/34 ,  H01L21/8242

CPC分类号： H01L27/10802 ,  H01L21/84 ,  H01L27/108 ,  H01L27/10826 ,  H01L27/10844 ,  H01L27/1203 ,  H01L29/7841 ,  H01L29/785

摘要： A capacitorless DRAM and methods of manufacturing and operating the same are provided. The capacitorless DRAM includes a source, a drain and a channel layer, formed on a substrate. A charge reserving layer is formed on the channel layer. The capacitorless DRAM includes a gate that contacts the channel layer and the charge reserving layer.

摘要翻译： 提供了一种无电容器DRAM及其制造和操作方法。 无电容器DRAM包括形成在衬底上的源极，漏极和沟道层。 在沟道层上形成电荷保留层。 无电容器DRAM包括接触沟道层和电荷保留层的栅极。

公开(公告)号：US07504128B2

公开(公告)日：2009-03-17

申请号：US11265192

申请日：2005-11-03

申请人： Byoung-ho Cheong ,  Young-gu Jin ,  Dae-sung Song ,  Jong-sun Lim

发明人： Byoung-ho Cheong ,  Young-gu Jin ,  Dae-sung Song ,  Jong-sun Lim

IPC分类号： B05D5/06

CPC分类号： G02B5/00

摘要： A method of fabricating a one-way transparent optical system designed to transmit almost 100% of internal light while effectively blocking radiation of external light. The method includes: forming bead-shaped light absorbing elements; dispersing the light absorbing elements over a soft transparent film; and curing the soft transparent film to fix the dispersed light absorbing elements onto the transparent film.

摘要翻译： 一种制造单向透明光学系统的方法，设计用于传输几乎100％的内部光，同时有效地阻挡外部光的辐射。 该方法包括：形成珠状光吸收元件; 将光吸收元件分散在柔软的透明膜上; 并固化软透明膜以将分散的光吸收元件固定在透明膜上。