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    Image sensors for sensing object distance information based on clock signals
    1.
    发明授权
    Image sensors for sensing object distance information based on clock signals 有权
    用于基于时钟信号感测物体距离信息的图像传感器

    公开(公告)号：US08648945B2

    公开(公告)日：2014-02-11

    申请号：US12954835

    申请日：2010-11-26

    申请人： Ilia Ovsiannikov ,  Yoon-dong Park ,  Dong-ki Min ,  Young-gu Jin

    发明人： Ilia Ovsiannikov ,  Yoon-dong Park ,  Dong-ki Min ,  Young-gu Jin

    IPC分类号： H04N3/14 ,  H04N5/335 ,  H04N7/18 ,  G01C3/08

    CPC分类号： G01B11/026 ,  G01S7/4912 ,  G01S7/4914 ,  G01S17/023 ,  G01S17/89

    摘要： An image sensor includes a clock signal generator configured to generate and output at least first and second clock signals, a plurality of pixels configured to generate associated distance signals based on corresponding clock signals from among the at least first and second clock signals and light reflected by an object, and a distance information deciding unit configured to determine distance information with respect to the object by using the associated distance signals. At least one first pixel from among the plurality of pixels is configured to generate the associated distance signal based on at least the first clock signal, and at least one second pixel from among the plurality of pixels, which is adjacent to the at least one first pixel, is configured to generate the associated distance signal based on at least the second clock signal.

    摘要翻译： 图像传感器包括：时钟信号发生器，被配置为产生并输出至少第一和第二时钟信号;多个像素，被配置为基于来自所述至少第一和第二时钟信号中的相应时钟信号和由 对象和距离信息决定单元，被配置为通过使用相关联的距离信号来确定关于对象的距离信息。 所述多个像素中的至少一个第一像素被配置为基于至少所述第一时钟信号和所述多个像素中的至少一个第二像素生成所述相关距离信号，所述至少一个第二像素与所述至少一个第一 像素，被配置为基于至少第二时钟信号来生成相关联的距离信号。

    IMAGE SENSORS FOR SENSING OBJECT DISTANCE INFORMATION
    2.
    发明申请
    IMAGE SENSORS FOR SENSING OBJECT DISTANCE INFORMATION 有权
    用于感测物体距离信息的图像传感器

    公开(公告)号：US20110129123A1

    公开(公告)日：2011-06-02

    申请号：US12954835

    申请日：2010-11-26

    申请人： Ilia Ovsiannikov ,  Yoon-dong Park ,  Dong-ki Min ,  Young-gu Jin

    发明人： Ilia Ovsiannikov ,  Yoon-dong Park ,  Dong-ki Min ,  Young-gu Jin

    IPC分类号： G06K9/00

    CPC分类号： G01B11/026 ,  G01S7/4912 ,  G01S7/4914 ,  G01S17/023 ,  G01S17/89

    摘要： An image sensor includes a clock signal generator configured to generate and output at least first and second clock signals, a plurality of pixels configured to generate associated distance signals based on corresponding clock signals from among the at least first and second clock signals and light reflected by an object, and a distance information deciding unit configured to determine distance information with respect to the object by using the associated distance signals. At least one first pixel from among the plurality of pixels is configured to generate the associated distance signal based on at least the first clock signal, and at least one second pixel from among the plurality of pixels, which is adjacent to the at least one first pixel, is configured to generate the associated distance signal based on at least the second clock signal.

    摘要翻译： 图像传感器包括：时钟信号发生器，被配置为产生并输出至少第一和第二时钟信号;多个像素，被配置为基于来自所述至少第一和第二时钟信号中的相应时钟信号和由 对象和距离信息决定单元，被配置为通过使用相关联的距离信号来确定关于对象的距离信息。 所述多个像素中的至少一个第一像素被配置为基于至少所述第一时钟信号和所述多个像素中的至少一个第二像素生成所述相关距离信号，所述至少一个第二像素与所述至少一个第一 像素，被配置为基于至少第二时钟信号来生成相关联的距离信号。

    Non-volatile memory devices having data storage layer
    3.
    发明授权
    Non-volatile memory devices having data storage layer 有权
    具有数据存储层的非易失性存储器件

    公开(公告)号：US08283711B2

    公开(公告)日：2012-10-09

    申请号：US12149209

    申请日：2008-04-29

    申请人： Young-gu Jin ,  Yoon-dong Park ,  Won-joo Kim ,  Seung-hoon Lee ,  Suk-pil Kim

    发明人： Young-gu Jin ,  Yoon-dong Park ,  Won-joo Kim ,  Seung-hoon Lee ,  Suk-pil Kim

    IPC分类号： H01L29/792

    CPC分类号： G11C5/02 ,  G11C5/025 ,  H01L27/2409 ,  H01L27/249 ,  H01L45/04 ,  H01L45/06 ,  H01L45/1226 ,  H01L45/143 ,  H01L45/144 ,  H01L45/146

    摘要： Provided are a non-volatile memory device, which may have a stacked structure and may be easily integrated at increased density, and a method of fabricating and using the non-volatile memory device. The non-volatile memory device may include at least one pair of first electrode lines. At least one second electrode line may be between the at least one pair of first electrode lines. At least one data storage layer may be between the at least one pair of first electrode lines and the at least one second electrode line and may locally store a resistance change.

    摘要翻译： 提供了一种非易失性存储器件，其可以具有堆叠结构并且可以容易地以增加的密度集成，以及制造和使用非易失性存储器件的方法。 非易失性存储器件可以包括至少一对第一电极线。 至少一个第二电极线可以在所述至少一对第一电极线之间。 至少一个数据存储层可以在至少一对第一电极线和至少一个第二电极线之间，并且可以局部地存储电阻变化。

    Photodiodes, image sensing devices and image sensors
    6.
    发明申请
    Photodiodes, image sensing devices and image sensors 有权
    光电二极管，图像传感器和图像传感器

    公开(公告)号：US20090146198A1

    公开(公告)日：2009-06-11

    申请号：US12216556

    申请日：2008-07-08

    申请人： In-Sung Joe ,  Yoon-dong Park ,  Young-gu Jin ,  Seung-hyuk Chang

    发明人： In-Sung Joe ,  Yoon-dong Park ,  Young-gu Jin ,  Seung-hyuk Chang

    IPC分类号： H01L31/113

    CPC分类号： H01L27/14621 ,  H01L27/14627 ,  H01L31/02165

    摘要： Provided are photodiodes, image sensing devices and image sensors. An image sensing device includes a p-n junction photodiode having a metal pattern layer on an upper surface thereof. An image sensor includes the image sensing device and a micro-lens formed above the metal pattern layer. The metal pattern layer filters light having a first wavelength.

    摘要翻译： 提供了光电二极管，图像感测装置和图像传感器。 图像感测装置包括在其上表面上具有金属图案层的p-n结光电二极管。 图像传感器包括图像感测装置和形成在金属图案层上方的微透镜。 金属图案层对具有第一波长的光进行滤光。

    Nonvolatile memory devices and methods of operating the same
    8.
    发明申请
    Nonvolatile memory devices and methods of operating the same 有权
    非易失性存储器件及其操作方法

    公开(公告)号：US20080304328A1

    公开(公告)日：2008-12-11

    申请号：US12071451

    申请日：2008-02-21

    申请人： Young-gu Jin ,  Ki-ha Hong ,  Yoon-dong Park ,  Jai-kwang Shin ,  Suk-pil Kim

    发明人： Young-gu Jin ,  Ki-ha Hong ,  Yoon-dong Park ,  Jai-kwang Shin ,  Suk-pil Kim

    IPC分类号： G11C16/06 ,  H01L29/788

    CPC分类号： G11C16/0416 ,  H01L21/28273 ,  H01L27/11521 ,  H01L29/0673 ,  H01L29/42324 ,  H01L29/66825 ,  H01L29/7881

    摘要： Example embodiments include nonvolatile memory devices that have good operation performance and may be made in a highly integrated structure, and methods of operating the same. Example embodiments of the nonvolatile memory devices include a substrate electrode, and a semiconductor channel layer on the substrate electrode, a floating gate electrode on the substrate electrode, wherein a portion of the floating gate electrode faces the semiconductor channel layer, a control gate electrode on the floating gate electrode, and wherein a distance between a portion of the floating gate electrode and the substrate electrode is smaller than a distance between the semiconductor channel layer and the substrate electrode wherein charge tunneling occurs.

    摘要翻译： 示例性实施例包括具有良好操作性能并且可以以高度集成的结构制造的非易失性存储器件及其操作方法。 非易失性存储器件的示例性实施例包括衬底电极和衬底电极上的半导体沟道层，衬底电极上的浮置栅电极，其中浮置栅电极的一部分面向半导体沟道层，控制栅极电极 所述浮置栅极电极，并且其中所述浮置栅电极的一部分与所述基板电极之间的距离小于半导体沟道层与发生电荷隧道的基板电极之间的距离。

    Photodiodes, image sensing devices and image sensors
    10.
    发明授权
    Photodiodes, image sensing devices and image sensors 有权
    光电二极管，图像传感器和图像传感器

    公开(公告)号：US08148762B2

    公开(公告)日：2012-04-03

    申请号：US12216556

    申请日：2008-07-08

    申请人： In-Sung Joe ,  Yoon-dong Park ,  Young-gu Jin ,  Seung-hyuk Chang

    发明人： In-Sung Joe ,  Yoon-dong Park ,  Young-gu Jin ,  Seung-hyuk Chang

    IPC分类号： H01L31/062

    CPC分类号： H01L27/14621 ,  H01L27/14627 ,  H01L31/02165

    摘要： Provided are photodiodes, image sensing devices and image sensors. An image sensing device includes a p-n junction photodiode having a metal pattern layer on an upper surface thereof. An image sensor includes the image sensing device and a micro-lens formed above the metal pattern layer. The metal pattern layer filters light having a first wavelength.

    摘要翻译： 提供了光电二极管，图像感测装置和图像传感器。 图像感测装置包括在其上表面上具有金属图案层的p-n结光电二极管。 图像传感器包括图像感测装置和形成在金属图案层上方的微透镜。 金属图案层对具有第一波长的光进行滤光。