公开(公告)号：US12199146B2

公开(公告)日：2025-01-14

申请号：US18204635

申请日：2023-06-01

Applicant: Infineon Technologies AG

Inventor： Alexander Philippou ,  Roman Baburske ,  Christian Jaeger ,  Johannes Georg Laven ,  Helmut Maeckel

IPC: H01L29/10 ,  H01L29/06 ,  H01L29/08 ,  H01L29/423 ,  H01L29/66 ,  H01L29/739 ,  H01L29/78

Abstract: A power semiconductor device having a barrier region is provided. A power unit cell of the power semiconductor device has at least two trenches that may both extend into the barrier region. The at least two trenches may both have a respective trench electrode coupled to a control terminal of the power semiconductor device. For example, the trench electrodes are structured to reduce the total gate charge of the power semiconductor device. The barrier region may be p-doped and vertically confined, i.e., in and against the extension direction, by the drift region. The barrier region can be electrically floating.

公开(公告)号：US11742417B2

公开(公告)日：2023-08-29

申请号：US17395758

申请日：2021-08-06

Applicant: Infineon Technologies AG

Inventor： Thorsten Arnold ,  Roman Baburske ,  Ilaria Imperiale ,  Alexander Philippou ,  Hans-Juergen Thees

IPC: H01L29/739 ,  H01L29/78 ,  H01L29/423 ,  H01L29/66 ,  H01L29/40

CPC classification number: H01L29/7397 ,  H01L29/401 ,  H01L29/4236 ,  H01L29/42304 ,  H01L29/66348 ,  H01L29/66734 ,  H01L29/7813 ,  H01L29/7831

Abstract: A power semiconductor device first trench structures extending from a first main surface into a semiconductor body up to a first depth. The first trench structures extend in parallel along a first lateral direction. Each first trench structure includes a first dielectric and a first electrode. The power semiconductor device further includes second trench structures extending from the first main surface into the semiconductor body up to a second depth that is smaller than the first depth. The second trench structures extend in parallel along a second lateral direction and intersect the first trenches at intersection positions. Each second trench structure includes a second dielectric and a second electrode. The second dielectric is arranged between the first electrode and the second electrode at the intersection positions.

公开(公告)号：US11610986B2

公开(公告)日：2023-03-21

申请号：US17350505

申请日：2021-06-17

Applicant: Infineon Technologies AG ,  Infineon Technologies Dresden GmbH & Co. KG

Inventor： Matteo Dainese ,  Alexander Philippou ,  Markus Beninger-Bina ,  Ingo Dirnstorfer ,  Erich Griebl ,  Christian Jaeger ,  Johannes Georg Laven ,  Caspar Leendertz ,  Frank Dieter Pfirsch

IPC: H01L29/00 ,  H01L29/739 ,  H01L29/06 ,  H01L29/10 ,  H01L29/40 ,  H01L29/66 ,  H01L29/423

Abstract: A power semiconductor switch includes an active cell region with a drift region, an edge termination region, and IGBT cells within the active cell region. Each IGBT cell includes trenches that extend into the drift region and laterally confine mesas. At least one control trench has a control electrode for controlling the load current. At least one dummy trench has a dummy electrode electrically coupled to the control electrode. At least one further trench has a further trench electrode. At least one active mesa is electrically connected to a first load terminal within the active cell region. Each control trench is arranged adjacent to no more than one active mesa. At least one inactive mesa is adjacent to the dummy trench. A cross-trench structure merges each control trench, dummy trench and further trench to each other. The cross-trench structure overlaps at least partially along a vertical direction with the trenches.

公开(公告)号：US11581428B2

公开(公告)日：2023-02-14

申请号：US17078620

申请日：2020-10-23

Applicant: Infineon Technologies AG

Inventor： Alexander Philippou ,  Markus Beninger-Bina ,  Matteo Dainese ,  Christian Jaeger ,  Johannes Georg Laven ,  Francisco Javier Santos Rodriguez ,  Antonio Vellei ,  Caspar Leendertz ,  Christian Philipp Sandow

IPC: H01L29/73 ,  H01L29/739 ,  H01L29/06 ,  H01L29/40 ,  H01L29/66 ,  H01L29/08 ,  H01L29/10 ,  H01L29/417 ,  H01L29/423

Abstract: A power semiconductor device includes an active cell region with a drift region of a first conductivity type, a plurality of IGBT cells arranged within the active cell region, each of the IGBT cells includes at least one trench that extends into the drift, an edge termination region surrounding the active cell region, a transition region arranged between the active cell region and the edge termination region, at least some of the IGBT cells are arranged within or extend into the transition region, a barrier region of a second conductivity type, the barrier region is arranged within the active cell region and in contact with at least some of the trenches of the IGBT cells and does not extend into the transition region, and a first load terminal and a second load terminal, the power semiconductor device is configured to conduct a load current along a vertical direction between.

公开(公告)号：US20210119003A1

公开(公告)日：2021-04-22

申请号：US17066954

申请日：2020-10-09

Applicant: Infineon Technologies AG

Inventor： Vera Van Treek ,  Roman Baburske ,  Christian Jaeger ,  Christian Robert Mueller ,  Franz-Josef Niedernostheide ,  Frank Dieter Pfirsch ,  Alexander Philippou ,  Judith Specht

IPC: H01L29/417 ,  H01L29/06 ,  H01L23/535 ,  H01L23/00 ,  H01L29/739

Abstract: A semiconductor die includes a semiconductor body having first and second active portions. The first active portion includes first source regions. The second active portion includes second source regions. A gate structure extends from a first surface into the semiconductor body and has a longitudinal gate extension along a lateral first direction. A first load pad and the first source regions are electrically connected. A second load pad and the second source regions are electrically connected. A gap laterally separates the first and second load pads. A lateral longitudinal extension of the gap is parallel to the first direction or deviates therefrom by not more than 60 degree. A connection structure electrically connects the first and second load pads. The connection structure is formed in a groove extending from the first surface into the semiconductor body and/or in a wiring layer formed on the first surface.

公开(公告)号：US10978560B2

公开(公告)日：2021-04-13

申请号：US16368638

申请日：2019-03-28

Applicant: Infineon Technologies AG

Inventor： Alexander Philippou ,  Roman Baburske ,  Christian Jaeger ,  Johannes Georg Laven ,  Helmut Maeckel

IPC: H01L29/06 ,  H01L29/78 ,  H01L29/66 ,  H01L29/739 ,  H01L29/10 ,  H01L29/423 ,  H01L29/08

Abstract: A power semiconductor device having a barrier region is provided. A power unit cell of the power semiconductor device has at least two trenches that may both extend into the barrier region. The at least two trenches may both have a respective trench electrode coupled to a control terminal of the power semiconductor device. For example, the trench electrodes are structured to reduce the total gate charge of the power semiconductor device. The barrier region may be p-doped and vertically confined, i.e., in and against the extension direction, by the drift region. The barrier region can be electrically floating.

公开(公告)号：US20210083051A1

公开(公告)日：2021-03-18

申请号：US17016472

申请日：2020-09-10

Applicant: Infineon Technologies AG

Inventor： Johannes Georg Laven ,  Roman Baburske ,  Alexander Philippou ,  Christian Philipp Sandow

IPC: H01L29/06 ,  H01L29/861 ,  H01L29/739 ,  H01L29/66

Abstract: A power device includes: a diode section; a semiconductor body; a drift region extending into the diode section; trenches in the diode section and extending along a vertical direction into the semiconductor body, two adjacent trenches defining a respective mesa portion in the semiconductor body; a body region in the mesa portions; in the diode section, a barrier region between the body and drift regions and having a dopant concentration at least 100 times greater than an average dopant concentration of the drift region and a dopant dose greater than that of the body region. The barrier region has a lateral structure according to which at least 50% of the body region in the diode section is coupled to the drift region at least by the barrier region, and at least 5% of the body region in the diode section is coupled to the drift region without the barrier region.

公开(公告)号：US10930772B2

公开(公告)日：2021-02-23

申请号：US16566141

申请日：2019-09-10

Applicant: Infineon Technologies AG

Inventor： Alexander Philippou ,  Christian Jaeger ,  Johannes Georg Laven ,  Antonio Vellei

IPC: H01L29/739 ,  H01L29/66 ,  H01L29/06 ,  H01L29/40 ,  H01L29/10

Abstract: An IGBT having a barrier region is presented. A power unit cell of the IGBT has at least two trenches that may both extend into the barrier region. The barrier region may be p-doped and vertically confined, i.e., in and against the extension direction, by means of the drift region. The barrier region can be electrically floating.

公开(公告)号：US20210050436A1

公开(公告)日：2021-02-18

申请号：US17087678

申请日：2020-11-03

Applicant: Infineon Technologies AG

Inventor： Antonio Vellei ,  Markus Beninger-Bina ,  Matteo Dainese ,  Christian Jaeger ,  Johannes Georg Laven ,  Alexander Philippou ,  Francisco Javier Santos Rodriguez

IPC: H01L29/739 ,  H01L29/06 ,  H01L29/40 ,  H01L21/033 ,  H01L21/225 ,  H01L21/265 ,  H01L21/324 ,  H01L29/10 ,  H01L29/417 ,  H01L29/423 ,  H01L29/66

Abstract: A method of processing a power semiconductor device includes: providing a semiconductor body with a drift region of a first conductivity type; forming a plurality of trenches extending into the semiconductor body along a vertical direction and arranged adjacent to each other along a first lateral direction; providing a mask arrangement at the semiconductor body, the mask arrangement having a lateral structure according to which some of the trenches are exposed and at least one of the trenches is covered by the mask arrangement along the first lateral direction; forming, below bottoms of the exposed trenches, a plurality of doping regions of a second conductivity type complementary to the first conductivity type; removing the mask arrangement; and extending the plurality of doping regions in parallel to the first lateral direction such that the plurality of doping regions overlap and form a barrier region of the second conductivity type adjacent to the bottoms of the exposed trenches.

公开(公告)号：US10910487B2

公开(公告)日：2021-02-02

申请号：US16456191

申请日：2019-06-28

Applicant: Infineon Technologies AG

Inventor： Alexander Philippou ,  Christian Jaeger ,  Johannes Georg Laven ,  Max Christian Seifert ,  Antonio Vellei

IPC: H01L29/739 ,  H01L29/40 ,  H01L29/06 ,  H01L29/41 ,  H01L29/66 ,  H01L29/866

Abstract: A power semiconductor device is disclosed. In one example, the device comprises a semiconductor body coupled to a first load terminal and a second load terminal and comprising a drift region configured to conduct a load current between said terminals. The drift region comprises dopants of a first conductivity type. A source region is arranged in electrical contact with the first load terminal and comprises dopants of the first conductivity type. A channel region comprises dopants of a second conductivity. At least one power unit cell that includes at least one first type trench. The at least one power unit cell further includes a first mesa zone and a second mesa zone of the semiconductor body.